Abstract: An electricity storage battery is described, including an anode electrolyte solution 32 that contains a zinc redox material and an amine represented by a general formula (1) below: In the general formula (1), n is one of the integers 0 to 4, and each of R1, R2, R3 and R4 independently represents hydrogen, methyl or ethyl.

Abstract: A positive electrode electrolyte (22) and a negative electrode electrolyte (32) that are used in this energy storage battery have a pH within the range from 2 to 8 (inclusive). An ion exchange membrane, which is obtained by graft-polymerizing styrenesulfonate to a resin film base material that uses an ethylene-vinyl alcohol copolymer as a matrix, is used as a diaphragm (12) of this energy storage battery.

Abstract: A redox flow battery is described, mainly including a charge/discharge cell, a cathode electrolyte tank, and an anode electrolyte tank. The inside of the charge/discharge cell is divided into a cathode cell and an anode cell by a diaphragm. A collector plate and a cathode are contained in the cathode cell. An aqueous solution containing a Mn-polyethyleneimine complex is supplied from the cathode electrolyte tank to the cathode through a supply pipe. Thereby, an energy storage battery that has durability sufficient for practical applications in a wide range of fields can be provided.

Abstract: An electricity storage battery is described, including a cathode electrolyte solution that contains a manganese redox material and an amine represented by a general formula (1) below: In the general formula (1), n is one of the integers 0 to 4, and each of R1, R2, R3 and R4 independently represents hydrogen, methyl or ethyl, with the proviso that at least one of R1, R2, R3 and R4 is methyl when n is 0.

Abstract: A multi-junction solar cell is provided and includes: a first solar cell element, having a first band gap and transmitting a part of incident light; a first conductive film, formed on a back surface of the first solar cell element and having light transmissivity and conductivity; a second solar cell element, having a second band gap smaller than the first band gap; a second conductive film, formed on a front surface of the second solar cell element and having light transmissivity and conductivity; and an adhesion layer, joining surfaces of the first and second conductive films, and having light transmissivity and conductivity. When refractive indexes of the first solar cell element, the first conductive film, the second solar cell element, the second conductive film and the adhesion layer are n1, n2, n3, n4 and n5, respectively, relations of n1>n2>n5 and n3>n4>n5 are satisfied.

Abstract: A redox flow battery includes a charge/discharge cell (11), a first tank (23) for storing a positive-electrode electrolyte (22), and a second tank (33) for storing a negative-electrode electrolyte (32). The positive-electrode electrolyte (22) contains, for example, an iron redox-based substance and citric acid. The negative-electrode electrolyte (32) contains, for example, a titanium redox substance and citric acid. The amount of dissolved oxygen in the negative-electrode electrolyte (32) in the second tank (33) is no greater than 1.5 mg/L.

Abstract: A thin film transistor is equipped with a silicon substrate, a channel layer, a source electrode and a drain electrode. The channel layer, the source electrode and the drain electrode are arranged on the main surface of the silicon substrate. The channel layer is composed of multiple carbon nanowall thin films, wherein the multiple carbon nanowall thin films are arranged in parallel to each other between the source electrode and the drain electrode, one end of each of the multiple carbon nanowall thin films is in contact with the source electrode, and the other end of each of the multiple carbon nanowall thin films is in contact with the drain electrode. An insulating film and a gate electrode are arranged on the rear surface side of the silicon substrate.

Abstract: A method for fabricating a thin-film transistor is described. A structure is provided, including a substrate transmitting an excimer laser light, a diffusion prevention film on the substrate, a gate electrode and a gate insulating film on the diffusion prevention film, and an oxide semiconductor layer on the gate insulating film. The structure is irradiated with an excimer laser light from the side of the substrate, so that two outer regions of the oxide semiconductor layer beside the region corresponding to the gate electrode are irradiated by the excimer laser light, with the gate electrode as a mask, to be reduced in resistance and thereby one of the two outer regions forms a source region and the other one forms a drain region. The diffusion prevention film includes a SiN:F film containing fluorine in a SiN film.

Abstract: A thin film transistor is equipped with a silicon substrate, a channel layer, a source electrode and a drain electrode. The channel layer, the source electrode and the drain electrode are arranged on the main surface of the silicon substrate. The channel layer is composed of multiple carbon nanowall thin films, wherein the multiple carbon nanowall thin films are arranged in parallel to each other between the source electrode and the drain electrode, one end of each of the multiple carbon nanowall thin films is in contact with the source electrode, and the other end of each of the multiple carbon nanowall thin films is in contact with the drain electrode. An insulating film and a gate electrode are arranged on the rear surface side of the silicon substrate.

Abstract: There is provided a method for manufacturing a carbon nanostructure with reduced occurrence of a bend and the like. The method for manufacturing a carbon nanostructure according to the present invention includes the steps of: preparing a base body formed of a catalyst member including a catalyst and a separation member that are in contact with or integral with each other (preparation step); oxidizing at least a part of a contact portion or integral portion of the catalyst member and the separation member (oxidation step); bringing a carbon-containing source gas into contact with the catalyst member and/or the separation member (CNT growth step); and growing a carbon nanostructure (CNT growth step). In the CNT growth step, the carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member, by heating the base body while separating the separation member from the catalyst member.

Abstract: A redox flow battery is described, mainly including a charge/discharge cell, a cathode electrolyte tank, and an anode electrolyte tank. The inside of the charge/discharge cell is divided into a cathode cell and an anode cell by a diaphragm. A collector plate and a cathode are contained in the cathode cell. An aqueous solution containing a Mn-polyethyleneimine complex is supplied from the cathode electrolyte tank to the cathode through a supply pipe. Thereby, an energy storage battery that has durability sufficient for practical applications in a wide range of fields can be provided.

Abstract: A positive electrode electrolyte (22) and a negative electrode electrolyte (32) that are used in this energy storage battery have a pH within the range from 2 to 8 (inclusive). An ion exchange membrane, which is obtained by graft-polymerizing styrenesulfonate to a resin film base material that uses an ethylene-vinyl alcohol copolymer as a matrix, is used as a diaphragm (12) of this energy storage battery.

Abstract: An insulating film that does not contain hydrogen or free fluorine and has good film properties is provided. A silicon oxynitride film includes silicon, nitrogen, oxygen, and fluorine, wherein the elemental percentage (N+O+F)/Si of the total (N+O+F) of nitrogen (N), oxygen (O), and fluorine (F) to silicon (Si) is in a range of 1.93 to 1.48, and in the silicon oxynitride film, an elemental percentage of silicon ranges from 0.34 to 0.41, an elemental percentage of nitrogen ranges from 0.10 to 0.22, an elemental percentage of oxygen ranges from 0.14 to 0.38, and an elemental percentage of fluorine ranges from 0.17 to 0.24. The film can be formed on a substrate by inductive coupling type plasma CVD whereby a plasma is generated by inductive coupling using a silicon tetrafluoride gas, a nitrogen gas, and an oxygen gas as a material gas.

Abstract: A carbon nanowall array (10) is provided with a substrate (1) and carbon nanowalls (2-9). The substrate (1) is composed of silicon, and includes protruding portions (11) and recessed portions (12). The protruding portions (11) and recessed portions (12) are formed in the direction (DR1) on one surface of the substrate (1). The protruding portions (11) and recessed portions (12) are alternately formed in the direction (DR2) perpendicular to the direction (DR1). Each of the protruding portions (11) has a length of 0.1-0.5 ?m in the direction (DR2), and each of the recessed portions (12) has a length of 0.6-1.5 ?m in the direction (DR2). The height of each of the protruding portions (11) is 0.3-0.6 ?m. Respective carbon nanowalls (2-9) are formed in the length direction (i.e., the direction (DR1)) of the protruding portions (11) of the substrate (1), said carbon nanowalls being formed on the protruding portions (11).

Abstract: There is provided a method for manufacturing a carbon nanostructure with reduced occurrence of a bend and the like. The method for manufacturing a carbon nanostructure according to the present invention includes the steps of: preparing a base body formed of a catalyst member including a catalyst and a separation member that are in contact with or integral with each other (preparation step); oxidizing at least a part of a contact portion or integral portion of the catalyst member and the separation member (oxidation step); bringing a carbon-containing source gas into contact with the catalyst member and/or the separation member (CNT growth step); and growing a carbon nanostructure (CNT growth step). In the CNT growth step, the carbon nanostructure is grown in a separation interface region between the catalyst member and the separation member, by heating the base body while separating the separation member from the catalyst member.

Abstract: An insulating film that does not contain hydrogen or free fluorine and has good film properties is provided. A silicon oxynitride film includes silicon, nitrogen, oxygen, and fluorine, wherein the elemental percentage (N+O+F)/Si of the total (N+O+F) of nitrogen (N), oxygen (0), and fluorine (F) to silicon (Si) is in a range of 1.93 to 1.48, and in the silicon oxynitride film, an elemental percentage of silicon ranges from 0.34 to 0.41, an elemental percentage of nitrogen ranges from 0.10 to 0.22, an elemental percentage of oxygen ranges from 0.14 to 0.38, and an elemental percentage of fluorine ranges from 0.17 to 0.24. The film can be formed on a substrate by inductive coupling type plasma CVD whereby a plasma is generated by inductive coupling using a silicon tetrafluoride gas, a nitrogen gas, and an oxygen gas as a material gas.

Abstract: An aggregate of carbon-based fine structures in which a plurality of carbon-based fine structures are collected, wherein respective carbon-based fine structures are oriented in the same direction. The above aggregate of carbon-based fine structures is an aggregate of a plurality of carbon-based fine structures in a state they are pulled by one another with strong interaction, and has such a length that allows the improvement of the handleability and workability thereof.

Abstract: The plasma processing including an antenna which is substantially straight in a plan view of the antenna is provided. The antenna includes two rectangular conductor plates disposed on a same plane along a surface of a substrate in a manner that the two rectangular conductor plates are parallel to each other with an interval therebetween. An end of a side in a longitudinal direction of each of the two rectangular conductor plates is connected through a conductor so as to form a go-and-return conductor, wherein the high frequency current flows in the two rectangular conductor plates in opposite directions. Notches are formed at the sides of the two rectangular conductor plates adjacent to the interval and the notches facing each other define an opening. The notches form the openings. The openings are separately arranged in the longitudinal direction of the antenna.

Abstract: An inductively-coupled-plasma (ICP) type plasma processing apparatus is provided. The plasma processing includes an antenna which is substantially straight in a plan view of the antenna. A plasma is generated for performing a plasma treatment to a substrate when a high frequency current is applied to the antenna to form an electric field in a vacuum container. The antenna includes two go-and-return conductors closely disposed to each other in an up-down direction, wherein the up-down direction is perpendicular to a surface of the substrate, and the high frequency current is applied to flow in opposite directions between the two go-and-return conductors. An interval is defined by a distance between the two go-and-return conductors in the up-down direction, varies in a longitudinal direction of the antenna.

Abstract: An inductively-coupled-plasma (ICP) type plasma processing apparatus is provided. The plasma processing includes an antenna which is substantially straight in a plan view of the antenna. A plasma is generated for performing a plasma treatment to a substrate when a high frequency current is applied to the antenna to form an electric field in a vacuum container. The antenna includes two go-and-return conductors closely disposed to each other in an up-down direction, wherein the up-down direction is perpendicular to a surface of the substrate, and the high frequency current is applied to flow in opposite directions between the two go-and-return conductors. An interval is defined by a distance between the two go-and-return conductors in the up-down direction, varies in a longitudinal direction of the antenna.