Abstract: A power supply system includes a distributed power supply, an opening/closing switch, an impedance element, a system abnormality detection part, and a switch control part. The distributed power supply is connected to a power line for supplying power to an important load from a commercial power system. The opening/closing switch is provided on a commercial power system side of the distributed power supply. The impedance element is connected in parallel to the opening/closing switch. The system abnormality detection part detects an abnormality of the commercial power system. The switch control part opens the opening/closing switch and connects the distributed power supply and the commercial power system via the impedance element when an abnormality of the commercial rower system is detected. When the distributed power supply and the commercial power system are connected via the impedance element, the distributed power supply continues an operation including a reverse power flow.

Abstract: Provided is a method for producing a thin film transistor that has a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode and a drain electrode on a substrate. This method for producing a thin film transistor includes a step for forming the oxide semiconductor layer on the gate insulating layer by performing sputtering on a target with plasma. The step for forming the oxide semiconductor layer includes: a first film formation step in which only argon is supplied as a sputtering gas to perform sputtering; and a second film formation step in which a mixed gas of argon and oxygen is supplied as the sputtering gas to perform sputtering. A bias voltage applied to the target is a negative voltage of ?1 kV or higher.

Abstract: The apparatus includes: a vacuum container; a substrate-holding part inside the vacuum container; a target-holding part inside the vacuum container; and a plurality of antennas having a flow channel through which a cooling liquid flows. The antennas include: at least two tubular conductor elements; a tubular insulating element that is arranged between mutually adjacent conductor elements and insulates the conductor elements; and a capacitive element that is connected electrically in series to the mutually adjacent conductor elements. The capacitive element includes: a first electrode which is connected electrically to one of the mutually adjacent conductor elements; a second electrode which is connected electrically to the other of the mutually adjacent conductor elements and is disposed facing the first electrode; and a dielectric substance that fills the space between the first electrode and the second electrode. The dielectric substance is a cooling liquid.

Abstract: The present invention provides a substrate heating system and a substrate processing device. The substrate heating system comprises: a top plate on which a substrate is mounted; a heater that is provided to a lower surface of the top plate; a plate temperature detection part that detects the temperature of the top plate; a heater temperature detection part that detects the temperature of the heater; and a heater control part that controls the output of the heater on the basis of the detected temperature of the heater and the detected temperature of the top plate. The heater control part controls the output of the heater such that a detected temperature difference between the detected temperature of the heater and the detected temperature of the top plate does not exceed a prescribed temperature difference upper limit and such that the detected temperature of the top plate is a prescribed set temperature.

Abstract: Provided is a power supply system comprising: distributed energy resources (2) connected to a power line (L1) for feeding power from a commercial power system (10) to an important load (30); a switch (3) provided in the power line (L1) for opening and closing the power line (L1); an impedance element (4) connected in parallel to the switch (3) in the power line (L1); a voltage detection unit (5) for detecting a voltage on the commercial power system (10) side with respect to the switch (3); and a control unit (6) for releasing, when a voltage detected by the voltage detection unit (5) becomes equal to or lower than a set point, the switch (3) such that the distributed energy resources (2) and the commercial power system (10) are connected through the impedance element (4) and the distributed energy resources (2) continue operation including reverse power flow.

Abstract: The impedance of an antenna is reduced and gaps generated between electrodes constituting a capacitance element and a dielectric body are eliminated. An antenna (3) for generating inductively coupled plasma P includes at least two conductor elements (31), an insulation element (32) that is arranged between the mutually adjacent conductor elements (31) and insulates the conductor elements (31), and a capacitance element (33) that is connected electrically to and in series with the mutually adjacent conductor elements (31). The capacitance element (33) is configured from a first electrode (33A) electrically connected to one of the mutually adjacent conductor elements (21), a second electrode (33B) electrically connected to the other of the mutually adjacent conductor elements (21), and a liquid dielectric body filling the space between the first electrode (33A) and the second electrode (33B).

Abstract: A capacitive element using a liquid as a dielectric, whereby the capacitance is prevented from changing. The capacitive element is equipped with: a storage container that has an inlet port for introducing a liquid serving as a dielectric, has an outlet port for discharging the liquid, and is filled with the liquid; and at least one pair of electrodes that are provided in the storage container and face each other, wherein an opening section for exhausting air bubbles in the storage container is formed in an upper wall of the storage container.

Abstract: A plasma control system comprises: a high frequency power source; a first antenna connected at one end to the high frequency power source; a second antenna connected at one end to another end of the first antenna; a first variable reactance element provided between the first antenna and the second antenna; a first drive part for the first variable reactance element; a second variable reactance element connected to another end of the second antenna; a second drive part for the second variable reactance element; a first current detection part detecting the current in the one end of the first antenna; a second current detection part detecting the current between the first antenna and the second antenna; a third current detection part detecting the current in the other end of the second antenna; and a control device controlling the first drive part and the second drive part.

Abstract: An antenna conductor is cooled to stably generate plasma, and unexpected fluctuation in the electrostatic capacity of a variable capacitor connected to the antenna conductor is suppressed while cooling the variable capacitor. A plasma processing device which generates plasma in a vacuum container and processes a substrate by using the plasma is provided. The plasma processing device includes: an antenna conductor through which a high-frequency current is caused to flow to generate plasma, and a variable capacitor which is electrically connected to the antenna conductor. The antenna conductor has a flow path in which a cooling liquid flows. A dielectric of the variable capacitor is constituted of the cooling liquid flowing through the antenna conductor.

Abstract: An ion beam irradiation device is provided and including: a substrate holder that holds a substrate; a rotating mechanism that rotates the substrate holder about a center portion of the substrate being held; a reciprocating mechanism that reciprocates the substrate holder and the rotating mechanism in the moving direction; an ion beam irradiator that irradiates the substrate with an ion beam; and a control device that controls the rotating mechanism and the reciprocating mechanism. The ion beam has a center region where the beam current density is a predetermined value or more in the moving direction, and a peripheral region where the beam current density is less than the predetermined value, a center region size in the direction orthogonal to the moving direction is larger than a substrate size in the direction orthogonal to the moving direction.

Abstract: The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering device 100 for depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamber 2 which can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding part 3 for holding the substrate W inside the vacuum chamber 2; target holding parts 4 for holding the targets T inside the vacuum chamber 2; multiple antennas 5 which are arranged along a surface of the substrate W held by the substrate holding part 3 and generate plasma P; and a reciprocal scanning mechanism 14 for scanning back and forth the substrate holding part 3 along the arrangement direction X of the multiple antennas 5.

Abstract: The impedance of an antenna is reduced and gaps generated between electrodes constituting a capacitance element and a dielectric body are eliminated. An antenna (3) for generating inductively coupled plasma P includes at least two conductor elements (31), an insulation element (32) that is arranged between the mutually adjacent conductor elements (31) and insulates the conductor elements (31), and a capacitance element (33) that is connected electrically to and in series with the mutually adjacent conductor elements (31). The capacitance element (33) is configured from a first electrode (33A) electrically connected to one of the mutually adjacent conductor elements (21), a second electrode (33B) electrically connected to the other of the mutually adjacent conductor elements (21), and a liquid dielectric body filling the space between the first electrode (33A) and the second electrode (33B).

Abstract: A thin film transistor having a high operation speed with a field effect mobility greater than 20 cm2/Vs and a method for manufacturing the same, and a semiconductor device having the same are provided. A thin film transistor in which a gate electrode, a gate insulating film and an oxide semiconductor film are laminated on a substrate, a source region and a drain region are respectively formed in outer portions of the oxide semiconductor film in the width direction, and a channel region is formed in a region between the source region and the drain region; and a source electrode is connected to the source region, while a drain electrode is connected to the drain region. The gate insulating film contains fluorine; and the ratio of the width W of the channel region to the length L thereof, namely W/L is less than 8.

Abstract: An ion beam irradiation device is provided and including: a substrate holder that holds a substrate; a rotating mechanism that rotates the substrate holder about a center portion of the substrate being held; a reciprocating mechanism that reciprocates the substrate holder and the rotating mechanism in the moving direction; an ion beam irradiator that irradiates the substrate with an ion beam; and a control device that controls the rotating mechanism and the reciprocating mechanism. The ion beam has a center region where the beam current density is a predetermined value or more in the moving direction, and a peripheral region where the beam current density is less than the predetermined value, a center region size in the direction orthogonal to the moving direction is larger than a substrate size in the direction orthogonal to the moving direction.

Abstract: A thin film transistor having a high operation speed with a field effect mobility greater than 20 cm2/Vs and a method for manufacturing the same, and a semiconductor device having the same are provided. A thin film transistor in which a gate electrode, a gate insulating film and an oxide semiconductor film are laminated on a substrate, a source region and a drain region are respectively formed in outer portions of the oxide semiconductor film in the width direction, and a channel region is formed in a region between the source region and the drain region; and a source electrode is connected to the source region, while a drain electrode is connected to the drain region. The gate insulating film contains fluorine; and the ratio of the width W of the channel region to the length L thereof, namely W/L is less than 8.

Abstract: Provided are an antenna, which is disposed in a vacuum chamber for generating an inductively coupled plasma, and a plasma processing device. The antenna and the plasma processing device suppress increase of the impedance even if the antenna is lengthened. An antenna 20 is disposed in a vacuum chamber 2 for generating an inductively coupled plasma 16 in the vacuum chamber 2 by applying a high frequency current. The antenna 20 includes an insulating pipe 22 and a hollow antenna body 24 which is disposed in the insulating pipe 22 and in which cooling water flows. The antenna body 24 has a structure that a plurality of metal pipes 26 are connected in series with a hollow insulator 28 interposed between the adjacent metal pipes 26, and each connecting portion has a sealing function with respect to vacuum and the cooling water.

Abstract: Provided is a film forming method to minimize decreases in the electrical resistance of an oxide semiconductor film even when a fluorinated silicon nitride film is formed directly on the oxide semiconductor film. The film forming method includes: a surface treatment process in which a substance including an oxide semiconductor film on a substrate is prepared, plasma is generated using a mixed gas of oxygen and hydrogen which contains hydrogen at a rate of 8% or less (not including 0), and plasma is used to treat surface of oxide semiconductor film; a film formation process in which a fluorinated silicon nitride film (a SiN:F film) is subsequently forming on oxide semiconductor film by a plasma CVD method in which plasma is generated using a raw material gas containing silicon tetrafluoride gas and nitrogen gas; and an annealing process in which substrate and film thereon are subsequently heated.

Abstract: Provided is a pipe holding connection structure configured so that the width of the entire structure is reduced and so that the number of parts and the number of assembly work processes are reduced. This pipe holding connection structure is provided with: a housing affixed so as to air-tightly close the opening of a vacuum container; a first pipe having a portion near an end portion thereof extending through both the opening and the housing; and a second pipe having a female thread part engaging with a male thread part located at the end portion. The pipe has a locking part. Fluid is caused to flow through both the pipes. Pieces of packing are provided between the pipe and the housing and between the pipe and an end portion of the pipe, respectively. This pipe holding connection structure can be used for a high-frequency antenna device.

Abstract: Provided is a film forming method to minimize decreases in the electrical resistance of an oxide semiconductor film even when a fluorinated silicon nitride film is formed directly on the oxide semiconductor film. The film forming method includes: a surface treatment process in which a substance including an oxide semiconductor film on a substrate is prepared, plasma is generated using a mixed gas of oxygen and hydrogen which contains hydrogen at a rate of 8% or less (not including 0), and plasma is used to treat surface of oxide semiconductor film; a film formation process in which a fluorinated silicon nitride film (a SiN:F film) is subsequently forming on oxide semiconductor film by a plasma CVD method in which plasma is generated using a raw material gas containing silicon tetrafluoride gas and nitrogen gas; and an annealing process in which substrate and film thereon are subsequently heated.

Abstract: Provided is a pipe holding connection structure configured so that the width of the entire structure is reduced and so that the number of parts and the number of assembly work processes are reduced. This pipe holding connection structure is provided with: a housing affixed so as to air-tightly close the opening of a vacuum container; a first pipe having a portion near an end portion thereof extending through both the opening and the housing; and a second pipe having a female thread part engaging with a male thread part located at the end portion. The pipe has a locking part. Fluid is caused to flow through both the pipes. Pieces of packing are provided between the pipe and the housing and between the pipe and an end portion of the pipe, respectively. This pipe holding connection structure can be used for a high-frequency antenna device.