Patents Assigned to Nissin Ion Equipment Co., Ltd.
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Publication number: 20120244724Abstract: An ion implantation method includes generating CmHy+ ions (m is such an integer as 4?m?6, and y is such an integer as 1?y?2m+2) using an ion generating material expressed by CnHx (n is such an integer as 4?n?6, and x is such an integer as 1?x?2n+2), and implanting the ions into a wafer.Type: ApplicationFiled: March 23, 2012Publication date: September 27, 2012Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventors: Yasunori Kawamura, Kyoko Kawakami, Yoshiki Nakashima
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Publication number: 20120229012Abstract: An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between.Type: ApplicationFiled: March 9, 2012Publication date: September 13, 2012Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventors: Yutaka Inouchi, Takeshi Matsumoto, Masahiro Tanii, Katsuharu Imai
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Patent number: 8258043Abstract: A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 ?s to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.Type: GrantFiled: September 2, 2011Date of Patent: September 4, 2012Assignees: National University Corporation Tokyo University of Agriculture and Technology, Nissin Ion Equipment Co., Ltd.Inventors: Toshiyuki Sameshima, Yutaka Inouchi, Takeshi Matsumoto, Yuko Fujimoto
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Patent number: 8253114Abstract: An ion source includes a plasma generating chamber into which an ionization gas containing fluorine is introduced, a hot cathode provided on one side in the plasma generating chamber, an opposing reflecting electrode which is provided on other side in the plasma generating chamber and reflects electrons when a negative voltage is applied from a bias power supply to the opposing reflecting electrode, and a magnet for generating a magnetic field along a line, which connects the hot cathode and the opposing reflecting electrode, in the plasma generating chamber. The opposing reflecting electrode is formed of an aluminum containing material.Type: GrantFiled: August 25, 2009Date of Patent: August 28, 2012Assignee: Nissin Ion Equipment Co., Ltd.Inventors: Takatoshi Yamashita, Tadashi Ikejiri, Tetsuya Igo
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Publication number: 20120196428Abstract: In an ion implantation method, ion implantation into a substrate is performed while changing a relative positional relation between an ion beam and the substrate. A first ion implantation process in which a uniform dose amount distribution is formed within the substrate and a second ion implantation process in which a non-uniform dose amount distribution is formed within the substrate are performed in a predetermined order. Moreover, a cross-sectional size of an ion beam irradiated on the substrate during the second ion implantation process is set smaller than a cross-sectional size of an ion beam irradiated on the substrate during the first ion implantation process.Type: ApplicationFiled: March 22, 2011Publication date: August 2, 2012Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventors: Hirofumi ASAI, Yoshikazu HASHINO
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Patent number: 8188645Abstract: A hot cathode includes: a hollow external conductor; a hollow internal conductor which is placed coaxially inside the external conductor; and a connection conductor which electrically connects tip end portions of the conductors. A heating current is folded back through the connection conductor to flow in opposite directions in the external conductor and the internal conductor.Type: GrantFiled: July 29, 2009Date of Patent: May 29, 2012Assignee: Nissin Ion Equipment Co., Ltd.Inventor: Naoki Miyamoto
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Publication number: 20120104285Abstract: An ion implantation method and the like by which a circular implantation region and a peripheral implantation region surrounding it and the dose amount of which is different from that of the circular implantation region can be formed within the surface of the substrate without the use of the step rotation of the substrate. The ion implantation method forms a circular implantation region and a peripheral implantation region surrounding it and a dose amount of which is different from that of the circular implantation region within a surface of the substrate by making variable a scanning speed of the ion beam 4 within the surface of the substrate and changing a scanning speed distribution, in an X direction, of the ion beam within the surface of the substrate for each one-way scanning or each reciprocative scanning, according to a position of the substrate in a Y direction.Type: ApplicationFiled: August 31, 2009Publication date: May 3, 2012Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventor: Masayoshi Hino
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Patent number: 8164070Abstract: A collimator magnet (CM) usable in an ion implantation system provides an exit ion beam with a large aperture, substantially parallel in one plane or orthogonal planes. The CM includes identical poles, defined by an incident edge receiving an ion beam, and an exit edge outputting the ion beam for implantation. Ion beam deflection takes place due to magnetic forces inside the CM and magnetic field fringe effects outside the CM. The CM incident and/or exit edge is shaped by solving a differential equation to compensate for magnetic field fringe effects and optionally, space charge effects and ion beam initial non-parallelism. The CM shape is obtained by imposing that the incidence or exit angle is substantially constant, or, incidence and exit angles have opposite sign but equal absolute values for each ray in the beam; or the sum of incidence and exit angles is a constant or a non-constant function.Type: GrantFiled: December 5, 2008Date of Patent: April 24, 2012Assignee: Nissin Ion Equipment Co., Ltd.Inventor: Dan Nicolaescu
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Publication number: 20120085918Abstract: To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region.Type: ApplicationFiled: April 27, 2010Publication date: April 12, 2012Applicants: KYOTO UNIVERSITY, NISSIN ION EQUIPMENT CO., LTD.Inventors: Dan Nicolaescu, Shigeki Sakai, Junzo Ishikawa, Yasuhito Gotoh
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Patent number: 8153995Abstract: An illuminating device includes: a light source which is disposed outside a vacuum chamber; a light guide which guides the light emitted from the light source, into the vacuum chamber; a light projecting portion which is fixed in the vacuum chamber, and which emits the light guided by the light guide; a light receiving portion which is attached to a support table of a holder driving device, and which receives the light emitted from the light projecting portion in a state where a holder is positioned in a notch detecting position; a light guide which guides the light received by the light receiving portion; and a light emitting device which is attached to the support table, and which irradiates an outer circumferential portion of a substrate with the light guided by the light guide.Type: GrantFiled: August 21, 2009Date of Patent: April 10, 2012Assignee: Nissin Ion Equipment Co., Ltd.Inventor: Masayoshi Hino
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Patent number: 8147705Abstract: When an ion beam 4 is to be extracted from an ion source 2 by using a gas containing boron trifluoride as an ion source gas 50 for supplying the gas into a plasma chamber 20 for the ion source 2, a bias voltage VB of a plasma electrode 31 with respect to the plasma chamber 20 for the ion source 2 is set to be positive by a bias circuit 64.Type: GrantFiled: October 19, 2006Date of Patent: April 3, 2012Assignee: Nissin Ion Equipment Co., Ltd.Inventors: Yutaka Inouchi, Syojiro Dohi, Yasunori Ando, Yasuhiro Matsuda
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Publication number: 20120077331Abstract: A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000° C. to 1200° C. for a duration in a range of approximately 10 ?s to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.Type: ApplicationFiled: September 2, 2011Publication date: March 29, 2012Applicants: NISSIN ION EQUIPMENT CO., LTD., National University Corporation Tokyo University of Agriculture and TechnologyInventors: Toshiyuki SAMESHIMA, Yutaka Inouchi, Takeshi Matsumoto, Yuko Fujimoto
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Patent number: 8143595Abstract: An ion implanter includes an implantation chamber into which an ion beam is introduced, a holder for holding substrates on two columns of a first column and a second column in an X-direction, and a holder driving unit having a function of setting the holder in a horizontal state and then positioning the holder in a substrate exchange position and a function of setting the holder in a standing state and then driving reciprocally and linearly the holder along the X-direction in an irradiation area of the ion beam. Also, the ion implanter includes two load lock mechanisms, and two substrate carrying units equipped with arms, which carry the substrates between the load lock mechanisms and a substrate exchange position respectively, every two arms.Type: GrantFiled: August 25, 2009Date of Patent: March 27, 2012Assignee: Nissin Ion Equipment Co., Ltd.Inventors: Junichi Tatemichi, Masatoshi Onoda, Kohichi Orihira
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Publication number: 20120049738Abstract: A plasma generator generates a plasma by ionizing a gas with a high-frequency discharge in a plasma generating chamber so that electrons from the plasma are emitted outside the plasma generator through an electron emitting hole. The plasma generator includes an antenna that is provided in the plasma generating chamber and that emits a high-frequency wave, and an antenna cover that is made of an insulating material and that covers an entire body of the antenna. A plasma electrode having the electron emitting hole is made of a conductive material. A frame cover with a protrusion ensures conductivity by preventing an insulating material from accumulating on a surface of the plasma electrode on a plasma side in sputtering by the plasma.Type: ApplicationFiled: August 4, 2011Publication date: March 1, 2012Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventors: Hideki FUJITA, Tetsuya IGO
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Publication number: 20110297843Abstract: An ion implanting apparatus includes: an electrostatic accelerating tube for causing an ion beam extracted from an ion source to have a desirable energy, and deflecting the ion beam to be incident on a target, the electrostatic accelerating tube including deflecting electrodes provided to interpose the ion beam therebetween. The deflecting electrodes include a first deflecting electrode and a second deflecting electrode to which different electric potentials from each other are set. The second deflecting electrode is provided on a side where the ion beam is to be deflected and includes an upstream electrode provided on an upstream side of the ion beam and a downstream electrode provided apart from the upstream electrode toward a downstream side. An electric potential of the upstream electrode and an electric potential of the downstream electrode are independently set from each other.Type: ApplicationFiled: August 31, 2009Publication date: December 8, 2011Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventors: Tetsuya Igo, Tadashi Ikejiri, Takatoshi Yamashita
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Patent number: 8040655Abstract: A substrate hold apparatus is provided an electrostatic chuck for electrostatically attracting and holding a substrate thereon, a push-up member contactable with a position of vicinity of an edge of the substrate on the electrostatic chuck from below for pushing up the substrate, a drive apparatus for driving at least one of the electrostatic chuck and push-up member to thereby allow the push-up member to push up the substrate, a force sensor for detecting a force applied to the push-up member in an pushing-up operation, and a control unit wherein the control unit is configured to measure the force from the force sensor as a first measurement, output a normal state signal when the measured force in the first measurement is equal to or larger than a lower limit value and is equal to or smaller than a upper limit value.Type: GrantFiled: January 29, 2008Date of Patent: October 18, 2011Assignee: Nissin Ion Equipment Co., Ltd.Inventors: Zhao Weijiang, Ai Taura
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Publication number: 20110248190Abstract: An ion implanter performs ion implantation by irradiating a wafer having a notch at its outer peripheral region by an ion beam. In ion implanter, a twist angle adjustment mechanism is configured to adjust a twist angle, an aligner is configured to adjust an alignment angle, a wafer transfer device is configured to transfer the wafer between the aligner and the twist angle adjustment mechanism, an image processing device is configured to detect the twist angle of the wafer on the twist angle adjustment mechanism, and a control device is configured to carry out a twist control in which the wafer is rotated by the twist angle adjustment mechanism by an angle obtained from a first difference between the detected twist angle and the alignment angle and a second difference between the alignment angle and a target twist angle given as one of ion implantation conditions.Type: ApplicationFiled: November 3, 2010Publication date: October 13, 2011Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventors: Kohei Tanaka, Takashi Nogami, Masayoshi Hino
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Publication number: 20110220808Abstract: An ion implanter has a beam deflector having a pair of magnetic poles facing each other in a z direction, insulating members provided on the respective magnetic poles, at least one pair of electrodes provided on the insulating members so as to face each other across a space through which the ion beam passes in the z direction, and at least one power source configured to apply a voltage to the pair of electrodes. The beam deflector is configured to deflect, by a magnetic field, an overall shape of the ion beam so as to be substantially parallel to the x direction. The pair of electrodes have a dimension longer than the dimension of the ion beam in the y direction, and constitute an asymmetrical einzel lens in the direction of travel of the central orbit of the ion beam.Type: ApplicationFiled: October 15, 2010Publication date: September 15, 2011Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventor: Dan Nicolaescu
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Patent number: 8017922Abstract: An ion implantation method includes scanning reciprocatingly an ion beam in an X direction by an electric field or magnetic field and mechanically driving reciprocatingly a substrate in a Y direction orthogonal to the X direction to implant ions over the entire surface of the substrate. A dose distribution that is non-uniform within the plane of the substrate is formed within the plane of the substrate by changing at least one of a scanning speed of the ion beam and a driving speed of the substrate within an area where the ion beam is incident on the substrate.Type: GrantFiled: May 7, 2004Date of Patent: September 13, 2011Assignee: Nissin Ion Equipment Co., Ltd.Inventors: Takao Matsumoto, Nobuo Nagai
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Publication number: 20110215263Abstract: An ion implantation method and the like by which a circular implantation region and a peripheral implantation region surrounding it and the dose amount of which is different from that of the circular implantation region can be formed within the surface of the substrate without the use of the step rotation of the substrate. The ion implantation method is forms a circular implantation region and a peripheral implantation region surrounding it and a dose amount of which is different from that of the circular implantation region within a surface of the substrate by making variable a scanning speed of the ion beam 4 within the surface of the substrate and changing a scanning speed distribution, in an X direction, of the ion beam within the surface of the substrate for each one-way scanning or each reciprocative scanning, according to a position of the substrate in a Y direction.Type: ApplicationFiled: August 31, 2009Publication date: September 8, 2011Applicant: NISSIN ION EQUIPMENT CO., LTD.Inventor: Masayoshi Hino