Abstract: A rapid start fluorescent lamp having an improved hot restarting time. The lamp includes the standard envelope and end cap through which electrical connection is made by conductive feedthroughs which extend through the lamp stem to the interior of the lamp. One of the feedthroughs is connected to the cathode, and the other is connected to the leads of a fuse element which is contained within an envelope to isolate the fusible element from the lamp environment. A thermally activated bimetallic element is disposed across the leads of the fuse. The other lead of the fusible element is connected to the other end of the cathode. When the bimetal element is cold, it will bridge the connection between the other feedthrough to the other end of the cathode to permit rapid starting. When the bimetal heats up, the connection of both ends of the cathode to the heating current is broken. The location of the bimetallic element within the lamp envelope but not in the fuse container permits it to open and close more rapidly.

Abstract: The tail current of a differential transistor pair (12 and 14) is controlled by a feed-back means (40) that couples the pair's tail node (16) to the control input of each transistor for controlling a biasing current through each transistor. The control input of each transistor further receives an input signal in addition to an output signal of the feed-back means. As a result, the circuit has a stable and accurate tail current, and in addition is suitable for a low-voltage supply or for high-current operation.

Abstract: A reduced-temperature two-step silicon deposition performed at different silicon sources is used in forming a composite monosilicon/polysilicon layer (20/24/26) on a body that contains a monosilicon region (10) and an adjoining dielectric regin (12). The first step entails selectively depositing silicon, preferably using dichlorosilane as a CVD silicon source, to grow a first monosilicon layer (20) on exposed monosilicon at an average body temperature less than or equal to 950.degree. C. Substantially no silicon accumulates on exposed dielectric material during the first step. The second step entails non-selectively depositing silicon, preferably using silane as a CVD silicon source, at an average body temperature less than or equal to 950.degree. C. to grow a second monosilicon layer (24) on the first monosilicon layer and to simultaneously grow a polysilicon layer (26) on the exposed dielectric material.

Abstract: A circuit formed with an input stage (20) and an output stage (22 or 28) uses capacitively enhanced switching to improve switching speed without significantly raising steady-state current utilization. The output stage contains a pair of amplifiers (A1and A2) that respond to complementary signals (V.sub.M1 and V.sub.M2) produced by the input stage. The amplifiers are coupled to a pair of corresponding nodes (N1 and N2). A third amplifier (A3) in the output stage has a control electrode coupled to one of the nodes, a flow electrode coupled to the other node, and another flow electrode coupled to a further node (N3). A current supply (24) provides current at the further node. A charge/discharge element (CD1) produces a capacitive-type charge/discharge action between the further node and a source of a reference voltage (V.sub.R1).

Abstract: A high pressure lamp assembly having an improved structure for supporting the discharge tube while providing an opening bi-metallic switch for electrically disconnecting the auxiliary electrode. Metallic frames are disposed at the upper and lower ends of the discharge lamp to provide at least partial support to the discharge tube. A non-conductive bridge assembly is connected between the lead through of the auxiliary electrode and a conductive rod extending from the stem. The non-conductive bridge provides at least partial mechanical support to the discharge tube. Connected across the non-conductive bridge is the starting resistor and bi-metallic switch element. When the bi-metallic element is unheated, it provides electrical connection through the starting resistor to the auxiliary electrode. When heated by the heat from the discharge tube, the bi-metallic switch moves out of engagement with the ceramic bridge and thus breaks the electrical connection to the auxiliary electrode.

Abstract: A rear projection screen for color television of the type having an array of vertically oriented, parallel lenticular elements on the front surface, uses two diagonally crossed, parallel lenticular element arrays embedded in the screen to control spreading of light into the front lenticular array, achieving better control and less attenuation of the light than systems using surface of bulk diffusion or a single horizontal lenticular array.

Abstract: A coin counting apparatus for a vending machine includes a down counter which is loaded with an initial count representing the number of coins to be deposited in order to initiate a vend cycle which initial count is decremented in response to each sequential coin detection. A display responsive to the current count of the counter indicates the number of coins yet to be deposited and a gate detecting the target count of zero is coupled to actuate relay contacts to signal the vending machine to initiate a vend cycle. An initialization circuit causes the loading of the initial count in response to either the detection of power up or the expiration of a predetermined time period, in the range of 1 to 10 minutes, after the last coin detection.

Abstract: A planar electrical interconnection system suitable for an integrated circuit is created by a process in which an insulating layer (31) having a planar upper surface is formed on a substructure after which openings (32) are etched through the insulating layer. A conductive planarizing layer (33) having a planar upper surface is formed on the insulating layer and in the openings by an operation involving isotropic deposition of a material, preferably tungsten, to create at least a portion of the planarizing layer extending from its upper surface partway into the openings. The planarizing layer is then etched down to the insulating layer. Consequently, its upper surface is coplanar with that of the material (33') in the openings. The foregoing steps are repeated to create another coplanar conductive/insulating layer (34 and 36'). If the lower openings are vias while the upper openings are grooves, the result is a planar interconnect level. Further planar interconnect levels can be formed in the same way.

Abstract: In hermetically sealing a base structure (10) of a ceramic package for a semiconductor device to a cap structure (12) of the device, one or more venting slots (36) are initially provided in the base sealing layer (16) or in the cap sealing layer (26). The base and cap structures are then fused together along the two sealing layers and electrical leads (20) by bringing the structures into contact and heating them to a temperature high enough to cause the sealing material to flow readily. The venting slots allow air to escape during the fusing step. This inhibits the formation of air bubbles along the sealing interface and thereby improves the hermeticity of the seal. The structures are subsequently cooled to harden the sealing layers into a unitary layer (28).

Abstract: A read/write head particularly suitable for mapping the superconductive properties of a sample of superconducting material. The head is arranged so that the reading and writing gaps are coaxial. Although the gaps are coaxial, the reading gap and the writing gap may be optimized in length and width to provide efficient reading and writing performance. The coaxial disposition of the heads eliminates parallax error to permit detailed mapping of the properties of the surface of a sample of superconductive material.

Abstract: A method and apparatus for generating a multi-carrier high-definition television (HDTV) signal including a digital sound and sync (DSS) component, on a conventional television channel, for example, 6 Hz. MAC derived signal components are quadrature modulated on a plurality of subcarriers and combined in frequency multiplexed form to create an RF signal.

Abstract: A Doppler velocity spectrum produced by radial projection in a two-dimensional Fourier frequency domain is processed to suppress alias spectral terms. The projected spectrum is divided into windows using an iterative algorithm which centers the spectral mean. The window containing data samples which maximizes a weighted score based upon the width and maximal value of samples within the window is used to determine which window contains true spectral components. Spectral components in other windows are then suppressed.

Abstract: An actively phase matched waveguide structure suitable for use as a frequency doubling device is described. The phase matching of the waveguide is controlled by application of a control voltage. The waveguide includes first and second non-linear optical layers of material having differing indexes of refraction forming a waveguide. Disposed on the surface of the waveguide is a layer of transparent semiconductor material disposed between two transparent electrodes. The index of refraction of the transparent semiconductor material varies with the potential applied to the electrode and thereby varies the phase matching of the waveguide as a whole.