Abstract: There is provided an optical measurement system that may include a control unit, an optical unit, first and second optical heads (OHs), and first and second movement units. The optical unit is configured to direct, during a first period, an illumination beam towards the second OH. The first movement unit is arranged to move, during the first period, the first OH to a first OH measurement site of a sample while the second OH participates in performing second OH metrology iterations at a second OH measurement site of the sample. The second movement unit is configured to move the second OH, during the second period, to a new second OH measurement site of the sample while the first OH participates in performing first OH metrology iterations. The or more of the first OH metrology iterations differ from each other by the polarization parameter.

Abstract: Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.

Abstract: A method for measuring characteristics of a workpiece. The method includes holding a workpiece to be tested at a specific measuring-position; forming a multi-spot-array over a test area of the workpiece, wherein said forming comprises manipulating light from at least one light source with an optical subsystem comprising a multi-spot generator; directing light emanating from the multi-spot-array towards at least one spectrometry device having an aperture; detecting Raman spectral characteristics of a plurality of spots of the multi-spot-array; and determining one or more properties of the test area of the workpiece based on the detected Raman spectral characteristics. Distribution of energy density of the multi-spot-array over the test area is configured to prevent affecting the workpiece during measurement.

Abstract: A computer system is presented configured and operable as a library constructor for use in extracting one or more parameters of a patterned structure from real time measured data obtained on said structure. The system comprises: data input utility for receiving input data comprising preliminary measured data obtained from at least a part of a structure, and comprising data indicative of user-defined quality of measurement results (QOR); and a data processor.

Abstract: A system and methods for OCD metrology are provided including receiving reference parameters, receiving multiple sets of measured scatterometric data, and receiving an optical model designed to generate one or more sets of model scatterometric data according to a set of pattern parameters, and training a machine learning model by applying, during the training, target features including the reference parameters, and by applying input features including the sets of measured scatterometric data and the sets of model scatterometric data, such that the trained machine learning model estimates new wafer pattern parameters from subsequently sets of measured scatterometric data.

Abstract: A system and methods for OCD metrology are provided including setting an interferometry mirror of the system at each of multiple positions z, wherein at each position the mirror reflection is Optical-Path-Difference (OPD) matched with reflection from the at least one reflective surface, and measuring interferometer spectra Imeasured, with the mirror at each of the multiple positions; then fitting the multiple measured interferometer spectra to an equation for Imeasured, to solve for non-z-dependent parameters of the equation, leaving a z-dependent function of the wave number k, having fully coherent and partially coherent terms; and removing the partially coherent terms of the function to derive a fully coherent field for characterizing the OCD structure.

Abstract: A measurement system for use in optical metrology, the measurement system which includes a control system configured and operable to carry out the following: (i) receive raw measured data generated by a measurement unit that is configured and operable for performing normal-incidence spectral interferometric measurements on a sample and generating the raw measured data indicative of spectral interferometric signals measured on the sample for a number of different optical path differences (OPDs) between sample and reference arms using infrared wavelengths; (ii) extract, from the raw measured data, a portion of spectral interferometric signals describing variation of signal intensity with a change of an optical path difference OPD during interferometric measurements, said portion of the spectral interferometric signals being independent of interferometric signals returned from a bottom portion of the sample in response to said illuminating electromagnetic field; and (iii) directly determine, from the extracted p

Abstract: A method for evaluating a sample, the method includes performing one or more pump probe measurements, wherein a pump probe measurement includes (i) illuminating the sample by a laser pump beam that is modulated by a modulation frequency; (ii) illuminating the sample by a laser probe beam; (iii) detecting radiation resulting from the illumination of the sample; (iv) determining, based on the detected radiation, thermo-reflectance information regarding a sample region located at a depth of the sample; wherein the thermo-reflectance information comprises information about an oscillatory component of a thermal response of the sample measured during the pump probe measurement; and (v) determining a presence of one or more sample abnormalities based on the analysis results.

Abstract: A method for evaluating a thick transparent layer, the method includes (i) generating information about relationships between measurements of a spectrometer of an interferometer and optical path difference (OPD) values of the interferometer; wherein the generating of the information comprises illuminating the thick transparent layer by the interferometer: (ii) determining one or more thick transparent layer reflection parameters, based on the information about the relationship; and (iii) determining one or more structural properties of the thick transparent layer based on the one or more thick transparent layer reflection parameters.

Abstract: Systems and methods are provided for measuring properties of a sample such as a semiconductor element by illuminating a polarizing beam splitter (PBS) with spatially separated non-polarized input optical beams such that the PBS polarizes the input optical beams to produce at least two polarized intermediate optical beams having different (e.g., orthogonal) polarization properties. The polarized intermediate optical beams are further directed to illuminate substantially the same area of a sample. Light returned from the illuminated sample area is directed again through the same PBS to form at least two polarized output beams, having different (e.g., orthogonal) polarization properties, where the differently polarized output optical beams are detectable by use of one or more optical detectors.

Abstract: A method for optical metrology of a sample, the method may include illuminating areas of the sample by sets of pulses of different wavelengths, during a movement of a variable speed of the sample; collecting light reflected from the sample, as a result of the illuminating, to provide sets of frames, each set of frames comprises partially overlapping frames associated with the different wavelengths; and processing the frames to provide optical metrology results indicative of one or more evaluated parameters of elements of the areas of the sample; wherein the processing is based on a mapping between the sets of frames and reference measurements obtained by an other optical metrology process that exhibits a higher spectral resolution than a spectral resolution obtained by the illuminating and the collecting.

Abstract: A measurement system for use in measuring parameters of a patterned sample, the system including a broadband light source, an optical system configured as an interferometric system, a detection unit, and a control unit, where the interferometric system defines illumination and detection channels having a sample arm and a reference arm having a reference reflector, and is configured for inducing an optical path difference between the sample and reference arms, the detection unit for detecting a combined light beam formed by a light beam reflected from the reflector and a light beam propagating from a sample's support, and generating measured data indicative of spectral interference pattern formed by spectral interference signatures, and the control unit for receiving the measured data and applying a model-based processing to the spectral interference pattern for determining one or more parameters of the pattern in the sample.

Abstract: A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure.

Abstract: A system and methods for Advance Process Control (APC) in semiconductor manufacturing include: for each of a plurality of waiter sites, receiving a pre-process set of scatterometric training data, measured before implementation of a processing step, receiving a corresponding post-process set of scatterometric training data measured after implementation of the process step, and receiving a set of process control knob training data indicative of process control knob settings applied during implementation of the process step; and generating a machine learning model correlating variations in the pre-process sets of scatterometric training data and the corresponding process control knob training data with the corresponding post-process sets of scatterometric training data, to train the machine learning model to recommend changes to process control knob settings to compensate for variations in the pre-process scatterometric data.

Abstract: A combined OCD and photoreflectance system and method for improving the OCD performance in measurements of optical properties of a target sample. The system comprises (a) either a single channel OCD set-up comprised of a single probe beam configured in a direction normal/oblique to the target sample or a multi-channel OCD set-up having multiple probe beams configured in normal and oblique directions to the target sample for measuring the optical properties of the target sample, (b) at least one laser source for producing at least one laser beam, (c) at least one modulation device to turn the at least one laser beam into at least one alternatingly modulated laser beam, and (d) at least one spectrometer for measuring spectral components of the at least one light beam reflecting off said target sample; wherein the at least one alternatingly modulated laser beam is alternatingly modulating the spectral reflectivity of the target sample.

Abstract: A method, a system, and a non-transitory computer readable medium for Raman spectroscopy.

Abstract: Systems and methods for metrology of workpieces such as wafers, using spectrometry of multi-spot-arrays formed over a test area of the tester workpiece, for optically measuring characteristics of the tested workpiece, where the optical metrology system is configured such that the distribution of energy density or flux of the multi-spot-array over the test area of the tested workpiece is such that prevents affecting the workpiece during its testing.

Abstract: A measurement system for use in optical metrology, the measurement system which includes a control system configured and operable to carry out the following: (i) receive raw measured data generated by a measurement unit that is configured and operable for performing normal-incidence spectral interferometric measurements on a sample and generating the raw measured data indicative of spectral interferometric signals measured on the sample for a number of different optical path differences (OPDs) between sample and reference arms using infrared wavelengths; (ii) extract, from the raw measured data, a portion of spectral interferometric signals describing variation of signal intensity with a change of an optical path difference OPD during interferometric measurements, said portion of the spectral interferometric signals being independent of interferometric signals returned from a bottom portion of the sample in response to said illuminating electromagnetic field; and (iii) directly determine, from the extracted p

Abstract: A metrology system that may include (i) thermal response critical dimensions (TRCD) optics that comprises pump beam optics and probe beam optics: wherein during a measurement iteration the pump beam optics are configured to illuminate the structure with a pump beam, and the probe beam optics are configured to illuminate the structure with a probe beam, to collect the response radiation and to sense the response radiation; and (ii) one or more modeling engines that are configured to determine at least one critical dimension of the structure based on the response radiation.

Abstract: A system for evaluating a sample, the system includes (i) a chopper that includes (i.1) a disc that is made of a transparent material that bears an inner opaque pattern and outer opaque pattern, the outer opaque pattern surrounds the inner opaque pattern, and (i.2) a rotating unit that is configured to rotate the disc during a modulation period, (ii) first optics, (iii) second optics, (iv) a control unit that is configured to detect a second modulated beam from the second optics, and control the rotating unit based on at least one parameter of the second modulated beam.