Abstract: A method for use in optical measurements on patterned structures, the method including performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure, the measurements including detecting light reflected from the at least part of the at least two different regions within the measurement spot, the detected light including interference of at least two complex electric fields reflected from the at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.

Abstract: A semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting a relevant and irrelevant portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the relevant portion of the time-domain representation.

Abstract: A method, a system, and a non-transitory computer readable medium for accurate Raman spectroscopy. The method may include executing at least one iteration of the steps of: (i) performing, by an optical measurement system, a calibration process that comprises (a) finding a misalignment between a region of interest defined by a spatial filter, and an impinging beam of radiation that is emitted from an illuminated area of a sample, the impinging beam impinges on the spatial filter; and (b) determining a compensating path of propagation of the impinging beam that compensates the misalignment; and (ii) performing a measurement process, while the optical measurement system is configured to provide the compensating path of propagation of the impinging beam, to provide one or more Raman spectra.

Abstract: A polarized Raman Spectrometric system for defining parameters of a polycrystalline material, said system comprising: a polarized Raman Spectrometric apparatus, a computer-controlled sample stage for positioning a sample at different locations, and a computer comprising a processor and an associated memory.

Abstract: Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi-layered structure.

Abstract: A method, a system, and a non-transitory computer readable medium for evaluating x-ray signals. The method may include calculating an estimated field for each of multiple non-perturbed objects, the multiple non-perturbed objects represent perturbances of the perturbed object; the perturbances are of an order of a wavelength of the non-diffused x-ray signals; and evaluating the non-diffused x-ray signals based on the field of the multiple non-perturbed objects.

Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer.

Abstract: A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure.

Abstract: Scatterometry analysis for a patterned structure, in which a patterned structure model is provided having a selected number of virtual segment data pieces indicative of a respective number of segments of the patterned structure along Z-axis through the structure, the segment data pieces processed for determining a matrix comprising Z-axis derivatives of electromagnetic elds' response of the segment to incident eld based on Maxwell's equations' solution, transforming this matrix into an approximated response matrix corresponding to the electromagnetic eld interaction between two different points spaced along the Z-axis, the transformation preferably carried out by a GPU, and comprises embedding the matrix in a series expansion of the matrix exponential term, the approximated response matrices for all the segment data pieces are multiplied for determining a general propagation matrix utilized to determine a scattering matrix for the patterned structure.

Abstract: A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal.

Abstract: A method and system are presented for use in measuring on patterned samples, aimed at determining asymmetry in the pattern. A set of at least first and second measurements on a patterned region of a sample is performed, where each of the measurements comprises: directing illuminating light onto the patterned region along an illumination channel and collecting light reflected from the illuminated region propagating along a collection channel to be detected, such that detected light from the same patterned region has different polarization states which are different from polarization of the illuminating light, and generating a measured data piece indicative of the light detected in the measurement. Thus, at least first and second measured data pieces are generated for the at least first and second measurements on the same patterned region. The at least first and second measured data pieces are analyzed and output data is generated being indicative of a condition of asymmetry in the patterned region.

Abstract: A method, a system, and a non-transitory computer readable medium for Raman spectroscopy. The method may include determining first acquisition parameters of a Raman spectroscope to provide a first acquisition set-up, the determining is based on at least one expected radiation pattern to be detected by a sensor of the Raman spectroscope as a result of an illumination of a first area of a sample, the first area comprises a first nano-scale structure, wherein at least a part of the at least one expected radiation pattern is indicative of at least one property of interest of the first nano-scale structure of the sample; wherein the first acquisition parameters belong to a group of acquisition parameters; setting the Raman spectroscope according to the first acquisition set-up; and acquiring at least one first Raman spectrum of the first nano-scale structure of the sample, while being set according to the first acquisition set-up.

Abstract: A system and method are presented for controlling measurements of various sample's parameters. The system comprises a control unit configured as a computer system comprising data input and output utilities, memory, and a data processor, and being configured to communicate with a measured data provider to receive measured data indicative of measurements on the sample. The data processor is configured to perform model-based processing of the measured data utilizing at least one predetermined model, and determine, for each of one or more measurements of one or more parameters of interest of the sample, an estimated upper bound on an error value for the measurement individually, and generate output data indicative thereof.

Abstract: A measurement system is provided for use in optical metrology measurements. The measurement system comprises a control system which processes raw measured data indicative of spectral interferometric signals measured on a sample in response to illuminating electromagnetic field incident onto a top portion of the sample and comprising at least one spectral range to which said sample is substantially not absorbing.

Abstract: A method, a system, and a non-transitory computer readable medium for Raman spectroscopy. The method may include determining first acquisition parameters of a Raman spectroscope to provide a first acquisition set-up, the determining is based on at least one expected radiation pattern to be detected by a sensor of the Raman spectroscope as a result of an illumination of a first area of a sample, the first area comprises a first nano-scale structure, wherein at least a part of the at least one expected radiation pattern is indicative of at least one property of interest of the first nano-scale structure of the sample; wherein the first acquisition parameters belong to a group of acquisition parameters; setting the Raman spectroscope according to the first acquisition set-up; and acquiring at least one first Raman spectrum of the first nano-scale structure of the sample, while being set according to the first acquisition set-up.

Abstract: A system for use in metrology of a patterned structure, the system including a data input utility configured to receive a first type of data related to the patterned structure, the first type of data was obtained by a first type of metrology system and comprises first type measurements and first geometrical information regarding the patterned structure. The data input utility is also configured to receive a second type of data related to the patterned structure, the second type of data was obtained by a second type of metrology system and comprises second type measurement results and second geometrical information regarding the patterned structure; the second type of metrology system differs from the first type of metrology system; and a data processing and analyzing utility configured to determine values of parameters of interest based on the first type of data and the second type of data.

Abstract: A system and methods for Advance Process Control (APC) in semiconductor manufacturing include: for each of a plurality of waiter sites, receiving a pre-process set of scatterometric training data, measured before implementation of a processing step, receiving a corresponding post-process set of scatterometric training data measured after implementation of the process step, and receiving a set of process control knob training data indicative of process control knob settings applied during implementation of the process step; and generating a machine learning model correlating variations in the pre-process sets of scatterometric training data and the corresponding process control knob training data with the corresponding post-process sets of scatterometric training data, to train the machine learning model to recommend changes to process control knob settings to compensate for variations in the pre-process scatterometric data.

Abstract: Photoreflectance (PR) spectroscopy system and method for accumulating separately a “pump on” light beam and a “pump off light beam reflecting off a sample. The system comprises: (a) a probe source for producing a probe beam, the probe beam is used for measuring spectral reflectivity of a sample, (b) a pump source for producing a pump beam, (c) at least one spectrometer, (d) a first modulation device to allow the pump beam to alternatingly modulate the spectral reflectivity of the sample, so that, a light beam reflecting from the sample is alternatingly a “pump on” light beam and a “pump off light beam, (e) a second modulation device in a path of the light beam reflecting off the sample to alternatingly direct the “pump on” light beam and the “pump off light beam to the at least one spectrometer, and (f) a computer.

Abstract: Abstract: Systems and methods for metrology of workpieces such as wafers, using spectrometry of multi- spot- arrays formed over a test area of the tester workpiece, for optically measuring characteristics of the tested workpiece, where the optical metrology system is configured such that the distribution of energy density or flux of the multi-spot-array over the test area of the tested workpiece is such that prevents affecting the workpiece during its testing.

Abstract: A polarized Raman Spectrometric system for defining parameters of a polycrystalline material, said system comprising: a polarized Raman Spectrometric apparatus, a computer-controlled sample stage for positioning a sample at different locations, and a computer comprising a processor and an associated memory.