Abstract: A metrology method for use in determining one or more parameters of a patterned structure, the method including providing raw measured TEM image data, TEMmeas, data indicative of a TEM measurement mode, and predetermined simulated TEM image data including data indicative of one or more simulated TEM images of a structure similar to the patterned structure under measurements and a simulated weight map including weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure, performing a fitting procedure between the raw measured TEM image data and the predetermined simulated TEM image data and determining one or more parameters of the structure from the simulated TEM image data corresponding to a best fit condition.

Abstract: A method, a system, and a non-transitory computer readable medium for Raman spectroscopy.

Abstract: Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

Abstract: A test site and method are herein disclosed for predicting E-test structure (in-die structure) and/or device performance. The test site comprises an E-test structure and OCD-compatible multiple structures in the vicinity of the E-test structure to allow optical scatterometry (OCD) measurements. The OCD-compatible multiple structures are modified by at least one modification technique selected from (a) multiplication type modification technique, (b) dummification type modification technique, (c) special Target design type modification technique, and (d) at least one combination of (a), (b) and (c) for having a performance equivalent to the performance of the E-test structure.

Abstract: A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.

Abstract: A process control method for manufacturing semiconductor devices, including determining a quality metric of a production semiconductor wafer by comparing production scatterometric spectra of a production structure of the production wafer with reference scatterometric spectra of a reference structure of reference semiconductor wafers, the production structure corresponding to the reference structure, the reference spectra linked by machine learning to a reference measurement value of the reference structure, determining a process control parameter value (PCPV) of a wafer processing step, the PCPV determined based on measurement of the production wafer and whose contribution to the PCPV is weighted with a first predefined weight based on the quality metric, and based on a measurement of a different wafer and whose contribution to the PCPV is weighted with a second predefined weight based on the quality metric, and controlling, with the PCPV, the processing step during fabrication.

Abstract: A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure.

Abstract: A method for use in measuring one or more characteristics of patterned structures, the method including providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the one or more characteristics to be measured, processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme, and analyzing the distribution of Raman-contribution efficiency and determining the one or more characteristics of the structure.

Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer.

Abstract: A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal.

Abstract: Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi-layered structure.

Abstract: A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.

Abstract: Controlling an etch process applied to a multi-layered structure, by calculating a spectral derivative of reflectance of an illuminated region of interest of a multi-layered structure during an etch process applied to the multi-layered structure, identifying in the spectral derivative a discontinuity that indicates that an edge of a void formed by the etch process at the region of interest has crossed a layer boundary of the multi-layered structure, determining that the crossed layer boundary corresponds to a preselected layer boundary of the multi-layered structure, and applying a predefined control action to the etch process responsive to determining that the crossed layer boundary corresponds to the preselected layer boundary of the multi -layered structure.

Abstract: The invention is a dental irrigator for delivering irrigant solution from an irrigation solution reservoir to the site of a dental procedure. The irrigator comprises: a hollow dental tool modified by the addition of one or more curved blades either formed directly on the neck of the tool or on a sleeve attached coaxially to the neck, one or more inlets associated with each of the curved blades, a housing that provides a watertight volume surrounding the inlets while allowing the tool to be freely moved with respect to the housing, and a supply hose, which conducts the irrigant solution at relatively low pressure from the reservoir to the housing. When the dental tool is attached to the distal end of a dental hand-piece and the hand-piece is activated causing the tool to move, irrigation solution enters the hollow interior of the neck of the tool and, as a result of the forces created by the motion of the curved blades, is delivered at relatively high pressure to the site.

Abstract: A dental tool displacement apparatus for use with a motorized power handle to displace a dental tool includes a tool holder having a receptacle for receiving the dental tool, and a drive arrangement. The drive arrangement defines a transmission from the motorized power handle to the tool holder such that the tool holder undergoes reciprocating motion parallel to the tool axis at a first frequency of oscillations per minute and rotates about the tool axis at a second frequency of rotations per minute. In some cases, the two types of motion are generated by an eccentric drive pin engaging an annular slot which has gear teeth along one side, thereby generating an angular rotation step of the tool holder during each reciprocating stroke. In some cases, the first frequency is at least one order of magnitude greater than the second frequency.

Abstract: The invention is an instrument for cleaning and/or shaping and/or widening a channel that exists in or through a solid object. The design of the instrument the superelastic and shape memory properties of the material from which it is made, allow the inner volume enclosed by the instrument, its outer contour, or both to change as a result of the forces exerted upon it while working, thereby shaping the instrument to the three-dimensional contour of the channel. A preferred embodiment of the instrument is an endodontic file for use in the cleaning, shaping, and widening stages of a root canal procedure.

Abstract: A dental tool displacement apparatus for use with a motorized power handle to displace a dental tool includes a tool holder having a receptacle for receiving the dental tool, and a drive arrangement. The drive arrangement defines a transmission from the motorized power handle to the tool holder such that the tool holder undergoes reciprocating motion parallel to the tool axis at a first frequency of oscillations per minute and rotates about the tool axis at a second frequency of rotations per minute. In some cases, the two types of motion are generated by an eccentric drive pin engaging an annular slot which has gear teeth along one side, thereby generating an angular rotation step of the tool holder during each reciprocating stroke. In some cases, the first frequency is at least one order of magnitude greater than the second frequency.

Abstract: The invention is an instrument for cleaning and/or shaping and/or widening a channel that exists in or through a solid object. The design of the instrument the superelastic and shape memory properties of the material from which it is made, allow the inner volume enclosed by the instrument, its outer contour, or both to change as a result of the forces exerted upon it while working, thereby shaping the instrument to the three-dimensional contour of the channel. A preferred embodiment of the instrument is an endodontic file for use in the cleaning, shaping, and widening stages of a root canal procedure.

Abstract: The invention is an instrument for cleaning and/or shaping and/or widening a channel that exists in or through a solid object. The design of the instrument the superelastic and shape memory properties of the material from which it is made, allow the inner volume enclosed by the instrument, its outer contour, or both to change as a result of the forces exerted upon it while working, thereby shaping the instrument to the three-dimensional contour of the channel. A preferred embodiment of the instrument is an endodontic file for use in the cleaning, shaping, and widening stages of a root canal procedure.