Abstract: Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.

Abstract: The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: Flow distribution networks that supply process gas to two or more stations in a multi-station deposition chamber. Each flow distribution network includes an inlet and flow distribution lines for carrying process gas to the stations. The flow distribution lines include a branch point downstream from the inlet and two or more branches downstream from the branch point. Each branch supplies a station. The flow distribution network also includes highly variable flow elements in each branch. Restrictive components are placed downstream from the variable control elements in each branch. These restrictive components are nominally identical and designed to shift the bulk of the pressure drop away from the variable flow components to improve flow balancing while not unduly increasing inlet pressure. In some cases, the load shifting allows the more variable flow components to operate in the unchoked flow regime.

Abstract: Methods and apparatuses that decouple wafer temperature from pre-heat station residence time, thereby improving wafer-to-wafer temperature uniformity, are provided. The methods involve maintaining a desired temperature by varying the distance between the wafer and a heater. In certain embodiments, the methods involve rapidly approaching a predetermined initial distance and then obtaining and maintaining a desired final temperature using closed loop temperature control. In certain embodiments, a heated pedestal supplies the heat. The wafer-pedestal gap may be modulated may be varied by moving the heated pedestal and/or moving the wafer, e.g., via a movable wafer support. Also in certain embodiments, the closed loop control system includes a real time wafer temperature sensor and a servo controlled linear motor for moving the pedestal or wafer support.

Abstract: Systems and methods of forming plasma are provided. In an embodiment, by way of example only, a plasma generation system includes a container comprising an insulating material, a means for forming a first plasma within the container from a processing gas, the first plasma including charged particles, a means for extracting a portion of the charged particles from the first plasma and storing the portion of extracted charged particles on the insulating material, and a means for forming a second plasma from the extracted portion of the charged particles and a second portion of the processing gas.

Abstract: Provided are methods and systems for removing polysilicon on a wafer. A wafer can include a polysilicon layer and an exposed nitride and/or oxide structure. An etchant with a hydrogen-based species, such as hydrogen gas, and a fluorine-based species, such as nitrogen trifluoride, can be introduced. The hydrogen-based species and the fluorine-based species can be activated with a remote plasma source. The layer of polysilicon on the wafer can be removed at a selectivity over the exposed nitride and/or oxide structure that is greater than about 500:1.

Abstract: Methods, apparatus, and systems for depositing materials with gaseous precursors are provided. In certain implementations, the methods involve providing a wafer substrate to a chamber of an apparatus. The apparatus includes a showerhead to deliver a gas to the chamber, a volume, and an isolation valve between the volume and the showerhead. A gas is delivered the volume when the isolation valve is closed, pressurizing the volume. The isolation valve is opened to allow the gas to flow to the showerhead when the gas is being delivered to the volume. A material is formed on the wafer substrate using the gas. In some implementations, releasing the pressurized gas from the volume reduces the duration of time to develop a spatially uniform gas flow across the showerhead.

Abstract: The embodiments disclosed herein pertain to novel methods and apparatus for removing material from a substrate. In certain embodiments, the method and apparatus are used to remove negative photoresist, though the disclosed techniques may be implemented to remove a variety of materials. In practicing the disclosed embodiments, a stripping solution may be introduced from an inlet to an internal manifold, sometimes referred to as a cross flow manifold. The solution flows laterally through a relatively narrow cavity between the substrate and the base plate. Fluid exits the narrow cavity at an outlet, which is positioned on the other side of the substrate, opposite the inlet and internal manifold. The substrate spins while in contact with the stripping solution to achieve a more uniform flow over the face of the substrate. In some embodiments, the base plate includes protuberances which operate to increase the flow rate (and thereby increase the local Re) near the face of the substrate.

Abstract: A robot for use in vacuum chambers is disclosed. The robot may be mounted within an oblong transfer chamber and may be translated within the transfer chamber by an umbilical arm operating in conjunction with a linear motion guide and carriage. Motors or drive systems for the robot may be housed in atmospheric conditions, and the transfer chamber may be kept at a vacuum. The robot may include one or more arms configured for wafer handling. The robot may include one or more motors or drive systems and a multi-axial seal to realize independent extension/retraction of each arm and overall simultaneous rotation of the arm assembly.

Abstract: The method and apparatus disclosed herein relate to preparing a stack structure for an electronic device on a semiconductor substrate. A particularly beneficial application of the method is in reduction of internal stress in a stack containing multiple layers of silicon. Typically, though not necessarily, the internal stress is a compressive stress, which often manifests as wafer bow. In some embodiments, the method reduces the internal stress of a work piece by depositing phosphorus doped silicon layers having low internal compressive stress or even tensile stress. The method and apparatus disclosed herein can be used to reduce compressive bow in stacks containing silicon.

Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multi-step ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated at each step. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first step to facilitate removal of the porogen and create a porous dielectric film. In a second step, the film is exposed to UV radiation to increase crosslinking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Abstract: Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.

Abstract: A method for filling a recessed feature of a substrate includes a) at least partially filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD); b) at a predetermined temperature, using an etchant including activated fluorine species to selectively etch the tungsten-containing film more than an underlying material of the recessed feature without removing all of the tungsten-containing film at a bottom of the recessed feature; and c) filling the recessed feature using at least one of CVD and ALD.

Abstract: A method for supplying a first gas and a second gas using a purge ring in a photonic processing system includes arranging a first layer and a second layer to define a first plenum and a first baffle, arranging the second layer and a third layer to define a second plenum and a second baffle, receiving a first gas at the first plenum that flows through the first plenum and the first baffle to an inner region, and receiving a second gas at the second plenum that flows through the second plenum and the second baffle to the inner region. The second baffle is one of less restrictive and more restrictive than the first baffle.

Abstract: Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.

Abstract: Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area.

Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.

Abstract: Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods.

Abstract: Examples of novel semiconductor processing pedestals, and apparatuses including such pedestals, are described. These pedestals are specifically configured to provide uniform heat transfer to semiconductor substrates and to reduce maintenance complexity and/or frequency. Specifically, a pedestal may include a removable cover positioned over a metal platen of the pedestal. The removable cover is configured to maintain a consistent and uniform temperature profile of its substrate-facing surface even though the platen's upper-surface, which supports the cover and is in thermal communication with the cover, may have a much less uniform temperature profile. The cover may be made from certain ceramic materials and shaped as a thin plate. These materials are resistant to the processing environments and maintain their thermal characteristics over many processing cycles. The cover can be easily removed from the platen and replaced with a new one without a need for major disassembly of the entire apparatus.