Abstract: A ferromagnetic thin-film based magnetic field detection system having a substrate supporting a magnetic field sensor in a channel with a first electrical conductor supported on the substrate positioned at least in part along the channel gap and in direct contact with at least some surface of the magnetic field sensor ands a second electrical conductor supported on the substrate positioned at least in part along the channel gap in a region thereof adjacent to, but separated from, the magnetic field sensor.

Abstract: A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a substrate adjacent to but electrically isolated from one another with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned between the substrate and the first input conductor. The substrate can include a monolithic integrated circuit structure containing electronic circuit components of which at least one is electrically connected to the first input conductor.

Abstract: A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a substrate adjacent to and spaced apart from one another so they are electrically isolated with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned between the substrate and the first input conductor. A similar second current sensor can be individually formed, but can also be in the current determiner structure that is supported on the substrate along with a second input conductor supported on the substrate suited for conducting input currents therethrough.

Abstract: A ferromagnetic thin-film based device that transitioned between alternative magnetic states thereof through having electrical currents established therethrough and has both a reference magnetization and a free layer magnetization provided therein by vortex magnetizations.

Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species held on a magnetic particle. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. A thin-film channel structure to the sensor is supported on the substrate that can be accompanied by a reservoir structure, and an electrical interconnection conductor is supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors.

Abstract: An in-wall storage apparatus for the sanitary storage of bathroom implements such as a plunger, toilet brush and cleansers is comprised of three primary components, namely: a housing mounted within a wall; a door assembly hingedly mounted to the housing; and a removable implement caddy slidably received within the door assembly. In a preferred embodiment, the caddy is slidably received within caddy receiving means located on the interior surface of the door. Caddy receiving means is preferably, but not essentially comprised of a shoe attached to the interior of the door and sized to accommodate at least a portion of the caddy. When in its open position, the door is preferably oriented at an incline of approximately 45 degrees to prevent the caddy and other contents from becoming accidentally dislodged and to provide a convenient position for removal of either the caddy or the implement stored therein.

Abstract: A tamper detecting enclosure arrangement for enclosures containing an interior space in which a protected item is positioned having a magnetoresistive sensing memory storage cell positioned in or near the protected item in the enclosure having a two state offset magnetoresistance versus externally applied magnetic field. A magnet is positioned at a selected separation distance from the magnetoresistive sensing memory storage cell to thereby provide a magnetic field about the magnetoresistive sensing memory storage cell if said enclosure has not been opened in such a manner as to result in substantially increasing said separation distance.

Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species held on a magnetic particle. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. A thin-film channel structure to the sensor is supported on the substrate that can be accompanied by a reservoir structure, and an electrical interconnection conductor is supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors.

Abstract: A tamper sensing system mounted with respect to a protected structure so as to have corresponding stress changes occur therein in response to selected kinds of tamperings with said protected structure comprising a first pair of stress affected magnetoresistive memory devices each capable of having a magnetic material layer therein established in a selected one of a pair of alternative magnetization states if in a first kind of stress condition and of being established in a single magnetization state if in an alternative second kind of stress condition, and the magnetic material layer in each having a magnetization in a first direction in one of the pair of alternative magnetization states and in a second direction in that remaining one of the pair of magnetization states.

Abstract: A ferromagnetic thin-film based magnetic field detection system having a substrate supporting a magnetic field sensor in a channel with a first electrical conductor supported on the substrate positioned at least in part along the channel gap and in direct contact with at least some surface of the magnetic field sensor and a second electrical conductor supported on the substrate positioned at least in part along the channel gap in a region thereof adjacent to, but separated from, the magnetic field sensor.

Abstract: A ferromagnetic thin-film based magnetic field detection system having a substrate supporting a magnetic field sensor in a channel with a first electrical conductor supported on the substrate positioned at least in part along the channel gap and in direct contact with at least some surface of the magnetic field sensor ands a second electrical conductor supported on the substrate positioned at least in part along the channel gap in a region thereof adjacent to, but separated from, the magnetic field sensor.

Abstract: A ferromagnetic thin-film based magnetic device with internal film coupling compensation including a nonmagnetic material intermediate layer with an initial thin-film of an anisotropic ferromagnetic material on one side. A compensation thin-film of an anisotropic ferromagnetic material is provided on the opposite side with an antiparallel coupling layer thereon and a subsequent thin-film of an anisotropic ferromagnetic material on the antiparallel coupling layer with the compensation thin-film being less thick than the subsequent thin-film. A antiferromagnetic layer can be supported by the layers on either side of the intermediate layer.

Abstract: A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.

Abstract: A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.

Abstract: A tamper detecting enclosure arrangement for enclosures containing an interior space in which a protected item is positioned having a magnetoresistive sensing memory storage cell positioned in or near the protected item in the enclosure having a two state offset magnetoresistance versus externally applied magnetic field. A magnet is positioned at a selected separation distance from the magnetoresistive sensing memory storage cell to thereby provide a magnetic field about the magnetoresistive sensing memory storage cell if said enclosure has not been opened in such a manner as to result in substantially increasing said separation distance.

Abstract: A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species held on a magnetic particle. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. A thin-film channel structure to the sensor is supported on the substrate that can be accompanied by a reservoir structure, and an electrical interconnection conductor is supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors.

Abstract: A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. An electrical interconnection conductor can be supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors.

Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species held on a magnetic particle. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. A thin-film channel structure to the sensor is supported on the substrate that can be accompanied by a reservoir structure, and an electrical interconnection conductor is supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors.