Patents Assigned to NVE Corporation
  • Patent number: 6404191
    Abstract: A plurality of magnetic field sensing structures in a monolithic integrated circuit chip structure to provide output signals at outputs thereof of magnetic field changes provided therein from corresponding sources having poled pair structures with a gap space between them with adjacent ones of the magnetic field sensing structures that are interconnected with a circuit formed in the monolithic integrated circuit chip such as an amplifier. The paired pole structures may intersect a surface of the chip perpendicular to the major surfaces thereof or in one of, or a surface parallel to, the major surfaces thereof. A magnetic field generating structure may also be included in the chip.
    Type: Grant
    Filed: March 22, 2001
    Date of Patent: June 11, 2002
    Assignee: NVE Corporation
    Inventors: James M. Daughton, Arthur V. Pohm
  • Publication number: 20020060565
    Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. An electrical interconnection conductor can be supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors. A polymeric channel and reservoir structure base is provided for the system.
    Type: Application
    Filed: March 5, 2001
    Publication date: May 23, 2002
    Applicant: NVE Corporation
    Inventor: Mark C. Tondra
  • Patent number: 6349053
    Abstract: A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series connected members of storage line structures. A corresponding conductive word line structure adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.
    Type: Grant
    Filed: June 26, 2001
    Date of Patent: February 19, 2002
    Assignee: NVE Corporation
    Inventors: James M. Daughton, Brenda A. Everitt, Arthur V. Pohm
  • Publication number: 20010017543
    Abstract: A plurality of magnetic field sensing structures in a monolithic integrated circuit chip structure to provide output signals at outputs thereof of magnetic field changes provided therein from corresponding sources having poled pair structures with a gap space between them with adjacent ones of the magnetic field sensing structures that are interconnected with a circuit formed in the monolithic integrated circuit chip such as an amplifier. The paired pole structures may intersect a surface of the chip perpendicular to the major surfaces thereof or in one of, or a surface parallel to, the major surfaces thereof. A magnetic field generating structure may also be included in the chip.
    Type: Application
    Filed: March 22, 2001
    Publication date: August 30, 2001
    Applicant: NVE Corporation
    Inventors: James M. Daughton, Arthur V. Pohm