Abstract: A signal isolator for providing at an output thereof representations of input currents from a source provided in an input conductor supported on a substrate having a bridge circuit suited for electrical connection to a source of electrical energization with a pair of series circuit members electrically connected in parallel with one another supported on a substrate with each series circuit member having a magnetoresistive member electrically connected in series with a current value controller, controlled at a controller terminal, at an output terminal of that controller. Each magnetoresistive members is electrically isolated from the input conductor and has a resistance versus applied external magnetic field characteristic that is substantially linear for at least relatively small externally applied magnetic fields.

Abstract: A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having first and second oppositely oriented relatively fixed magnetization layers and a ferromagnetic material film in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained. This ferromagnetic material film is separated from the first and second fixed magnetization films by corresponding layers of a nonmagnetic materials one being electrically insulative and that one remaining being electrically conductive. Each bit structure has an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate.

Abstract: A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

Abstract: A ferromagnetic thin-film based array of directed magnetic field generating structures having a plurality of toroidally shaped layer stacks each with a pair of ferromagnetic material layers separated by an intermediate layer of nonmagnetic material. Electrical connections are made to opposite sides thereof. A serpentine first side electrical conductor is folded back so as to have parallel branches and together zigzag to cross over each stack on one side thereof. A serpentine second side electrical conductor, also folded back so as to have parallel branches, can be further provided with these branches together zigzagging to cross each stack on an opposite side thereof. These first and second side electrical conductors can be electrically joined to form an array electrical conductor.

Abstract: A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

Abstract: A ferromagnetic thin-film based digital memory having a substrate formed of a base supporting an electrically insulating material primary substrate layer in turn supporting a plurality of current control devices each having an interconnection arrangement with each of said plurality of current control devices being separated from one another by spacer material therebetween and being electrically interconnected with information storage and retrieval circuitry. A plurality of bit structures are each supported on and electrically connected to a said interconnection arrangement of a corresponding one of said plurality of current control devices and have magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained of which two are separated by at least one intermediate layer of a nonmagnetic material having two major surfaces on opposite sides thereof.

Abstract: A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.

Abstract: A ferromagnetic thin-film based magnetic field sensor with first and second sensitive direction sensing structures each having a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof having a magnetization reference layer on one and an anisotropic ferromagnetic material sensing layer on the other having a length in a selected length direction and a smaller width perpendicular thereto and parallel to the relatively fixed magnetization direction. The relatively fixed magnetization direction of said magnetization reference layer in each is oriented in substantially parallel to the substrate but substantially perpendicular to that of the other. An annealing process is used to form the desired magnetization directions.

Abstract: A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.

Abstract: A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

Abstract: A ferromagnetic thin-film based magnetic field detection system having a substrate supporting a magnetic field sensor in a channel with a first electrical conductor supported on the substrate positioned at least in part along the channel gap and in direct contact with at least some surface of the magnetic field sensor ands a second electrical conductor supported on the substrate positioned at least in part along the channel gap in a region thereof adjacent to, but separated from, the magnetic field sensor.

Abstract: A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having first and second oppositely oriented relatively fixed magnetization layers and a ferromagnetic material film in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained. This ferromagnetic material film is separated from the first and second fixed magnetization films by corresponding layers of a nonmagnetic materials one being electrically insulative and that one remaining being electrically conductive. Each bit structure has an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate.

Abstract: A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.

Abstract: A current determiner comprising a first input conductor and a first current sensor, formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic layer positioned therebetween, and both supported on a substrate adjacent to and spaced apart from one another so they are electrically isolated with the first current sensor positioned in those magnetic fields arising from any input currents. A first shield/concentrator of a material exhibiting a substantial magnetic permeability is positioned between the substrate and the first input conductor. The substrate can include a monolithic integrated circuit structure containing electronic circuit components of which at least one is electrically connected to the first input conductor.

Abstract: A ferromagnetic thin-film based array of directed magnetic field generating structures having a plurality of toroidally shaped layer stacks each with a pair of ferromagnetic material layers separated by an intermediate layer of nonmagnetic material. Electrical connections are made to opposite sides thereof. A serpentine first side electrical conductor is folded back so as to have parallel branches and together zigzag to cross over each stack on one side thereof. A serpentine second side electrical conductor, also folded back so as to have parallel branches, can be further provided with these branches together zigzagging to cross each stack on an opposite side thereof. These first and second side electrical conductors can be electrically joined to form an array electrical conductor.

Abstract: A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained separated by at least one layer of a nonmagnetic material with each bit structure having an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection structure provides electrical contact thereto.

Abstract: A ferromagnetic thin-film based digital memory having a substrate formed of a base supporting an electrically insulating material primary substrate layer in turn supporting a plurality of current control devices each having an interconnection arrangement with each of said plurality of current control devices being separated from one another by spacer material therebetween and being electrically interconnected with information storage and retrieval circuitry. A plurality of bit structures are each supported on and electrically connected to a said interconnection arrangement of a corresponding one of said plurality of current control devices and have magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained of which two are separated by at least one intermediate layer of a nonmagnetic material having two major surfaces on opposite sides thereof.

Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. An electrical interconnection conductor can be supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors.

Abstract: A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding to the selected molecular species. The magnetic field sensor can be substantially covered by an electrical insulating layer having a recess therein adjacent to the sensor in which the binding molecule layer is provided. An electrical interconnection conductor can be supported on the substrate at least in part between the sensor and the substrate, and is electrically connected to the sensor. The magnetic field sensor can be provided in a bridge circuit, and can be formed by a number of interconnected individual sensors. A polymeric channel and reservoir structure base is provided for the system.

Abstract: A ferromagnetic thin-film based magnetic field sensor having a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof upon one of which a magnetization reference layer is provided and upon the other there being provided a sensing layer. A spacer layer is provided on the sensing film to separate this sensing film from an augmenting film with the spacer layer being sufficiently thick so as to significantly reduce or eliminate topological coupling between the sensing and augmenting films, and to significantly randomize spin states of emerging electrons traversing therethrough.