Abstract: Optical systems including an interferometer utilizing a spatial light modulator. A light guide including a first beam splitter and multiple mirrors directs incoherent light through the beam splitter to the interferometer to generate an interference light pattern, and further directs the interference light pattern back to the first beam splitter via the mirrors.

Abstract: A circuit includes a bandgap circuit configured to generate multiple reference voltages. A first voltage glitching detection circuit utilizes a first one of the reference voltages and a first power rail to generate a first reset signal in response to a voltage glitching attack on the first power rail, and a second voltage glitching detection circuit operates independently of the reference voltages to generate a second reset signal in response to the voltage glitching attack on the first power rail.

Abstract: Negative bit line voltage assist mechanisms for multi-bank machine memories utilizing multiple local IO drivers include a shared boost capacitor configured to generate a negative bit line voltage assist for write operations by local IO drivers, where the boost capacitor is configured to selectively couple to one of the local IO drivers during the write operation.

Abstract: A genetic algorithm is utilized to generate routing candidates to which a reinforcement learning model is applied to correct the design rule constraint violations incrementally. A design rule checker provides feedback on the violations to the reinforcement learning model and the model learns how to fix the violations. A layout device placer based upon a simulated annealing method may also be utilized.

Abstract: Lattice graph routability modelling mechanisms for standard cells utilizing a trained lattice graph routability model to determine routability metrics for local areas and global net connections in the standard cell. The metrics are applied to influence transistor placement in the standard cell, resulting in standard cell layouts with improved routability. Circuit layout generating processes are also described, in which a layout is formed lacking external pin assignments, and during routing of the nets for the circuit, a graph comprising virtual nodes and edges from the virtual nodes to grid locations for pins external to the circuit is generated. Routing to the external net of the circuit is performed according to the graph nodes and the graph edges.

Abstract: Lattice graph routability modelling mechanisms for standard cells utilizing a trained lattice graph routability model to determine routability metrics for local areas and global net connections in the standard cell. The metrics are applied to influence transistor placement in the standard cell, resulting in standard cell layouts with improved routability. Circuit layout generating processes are also described, in which a layout is formed lacking external pin assignments, and during routing of the nets for the circuit, a graph comprising virtual nodes and edges from the virtual nodes to grid locations for pins external to the circuit is generated. Routing to the external net of the circuit is performed according to the graph nodes and the graph edges.

Abstract: Power supply circuits in which a supplemental current driver is utilized to boost the current provided by a voltage regulator. The supplementing driver detects operating conditions for providing the supplementary current, and may be trained to provide particular amounts of current in response to particular operation conditions of a circuit load.

Abstract: Mechanisms to mitigate signal race conditions in circuits that utilize multiple voltage domains. The mechanisms are applicable in signal fanout scenarios where leakage becomes problematic to signal timing, such machine memory devices, e.g., volatile single port or multi-port memory devices such as SRAMs (volatile static random access memory) or other bit-storing cell arrangements that include memory cells and a hierarchical bitline structure including local bitlines for subsets of the memory banks and a global bitline spanning the subsets.

Abstract: Optical transceiver architecture utilizing micro-ring modulators and micro-ring resonators configured to route resonant wavelengths of light injected into each micro-ring resonator's input port and through port to that micro-ring resonator's drop port and add port, respectively. The micro-ring resonators drop two distinct streams of data modulated onto the same optical wavelength, or two wavelengths separated by an integer number of free spectral ranges coupled into the micro-ring resonators in two different directions.

Abstract: A process for manufacturing inductors for use in integrated circuits includes embedding ferromagnetic material in a bulk silicon substrate, forming a plurality of vias in the bulk silicon substrate such that the vias bracket a volume of the bulk silicon substrate that includes the ferromagnetic material, slicing the bulk silicon substrate to form a silicon wafer, and configuring traces between top metal pads of the vias and between bottom metal pads of the vias to form a continuous path for current to flow circumferentially from a first end of the volume to a second end of the volume.

Abstract: Data bits are encoded in one or both of an eleven bit seven pulse amplitude modulated three-level (PAM-3) symbol (11b7s) format and a three bit two symbol (3b2s) format on a plurality of data channels and on an error correction channel. One or more of a cyclic redundancy check (CRC) value, a poison value, and a severity value are encoded as 11b7s and/or 3b2s PAM-3 symbols on the error correction channel.

Abstract: Data bits are encoded in one or both of an eleven bit seven pulse amplitude modulated three-level (PAM-3) symbol (11b7s) format and a three bit two symbol (3b2s) format on a plurality of data channels, one or more auxiliary data channels, and an error correction channel. One or more of a cyclic redundancy check (CRC) value, a poison value, and a severity value are encoded as 11b7s and/or 3b2s PAM-3 symbols on an error correction channel.

Abstract: PUF cells utilizing a dual-interlocking scheme demonstrating improved noise immunity and stability across different V/T conditions and different uses over time in noisy environments. The PUF cell may be advantageously utilized in conjunction with error detection techniques that screen out unstable cells. A set of such PUF cells utilized to generate a device-specific bit pattern, for example a master key.

Abstract: A static random access memory (SRAM) or other bit-storing cell arrangement includes memory cells and a hierarchical bitline structure including local bitlines for subsets of the memory banks and a global bitline spanning the subsets. A keeper circuit for the global bitline is replaced by bias circuitry on output transistors of the memory cells.

Abstract: An integrated circuit that includes multiple power rails with dummy loads configured on at least some of the power rails. The dummy loads are activated in response to a voltage overshoot condition on regions of the power rails at which the dummy loads are located. The dummy loads may be substituted for decoupling capacitors or other active cells at particular regions of the power rails.

Abstract: An error reporting system utilizes a parity checker to receive data results from execution of an original instruction and a parity bit for the data. A decoder receives an error correcting code (ECC) for data resulting from execution of a shadow instruction of the original instruction, and data error correction is initiated on the original instruction result on condition of a mismatch between the parity bit and the original instruction result, and the decoder asserting a correctable error in the original instruction result.

Abstract: Mechanisms to place flip-flops and other synchronous logic cells in a circuit layout in a clock on-chip variation-aware, predetermined order based on analysis of the clock gating, connectivity, and logic depth of the unplaced netlist. The resulting placements enable clock trees having a regular structure leading to improvements in clock on-chip variation, timing, and clock power.

Abstract: Circuits that include one or more transmission lines to propagate a signal through a serially-arranged plurality of repeaters, and one or more control circuits to propagate control pulses to the repeaters, wherein a timing and duration of the control pulses is configured to operate the repeaters in current-mode signaling (CMS) mode during a state transition of the signal at the repeaters and to operate the repeaters in voltage-mode signaling (VMS) mode otherwise.

Abstract: Integrated inductors are formed by arranging multiple vias to bracket a volume of semiconductor substrate, where each via includes a top metal pad and a bottom metal pad. The vias are alternately connected by way of the top and bottom pads to form an end-to-end current loop along a length of the volume of semiconductor substrate.

Abstract: Stacked voltage domain level shifting circuits for shifting signals low-to-high or high-to-low include a storage cell powered by a mid-range supply rail of the stacked voltage domain level shifting circuit, and control drivers powered by moving supply voltages generated by the storage cell, wherein the control drivers coupled to drive gates of common-source configured devices coupled to storage nodes of the storage cell.