Abstract: To reduce pumping time of a vacuum treatment chamber served by a transport arrangement in a transport chamber the vacuum treatment chamber is split into a workpiece treatment compartment and a pumping compartment in mutual free flow communication and arranged opposite each other with respect to a movement path of the transport arrangement serving the vacuum treatment chamber. The pumping compartment allows a pumping port to have a flow cross-section area that is freely selectable independently from the geometry of the treatment compartment.

Abstract: The invention relates to a method for manufacturing a high performance multi layer ceramic capacitor, comprising the steps of: a) providing a substrate having a first edge and a second edge arranged opposite to the first edge, b) depositing a bottom electrode layer onto the substrate using a thick-film and/or thin-film deposition method such that the electrode layer extends all the way from the first edge towards the second edge of the substrate such that a trench free of the bottom electrode layer is provided adjacent in between the deposited bottom electrode layer and the second edge of the substrate, d) depositing a high-k dielectric ceramic layer onto the electrode layer using a thick-film and/or thin-film deposition method such that the high-k dielectric ceramic layer extends all the way to the first edge and to the second edge of the substrate, f) depositing a low-k dielectric layer comprising silicon nitride, silicon dioxide and/or aluminum oxide onto the high-k dielectric ceramic layer using a thin-fi

Abstract: The present invention concerns a procedure for the production of a plasma that is at least co-produced in the vacuum chamber (1a) of a vacuum recipient (1) of a device suitable for plasma processing with at least one induction coil (2) carrying an alternating current, where the gas used to produce the plasma is fed into the vacuum chamber (1a) through at least one inlet (3) and the vacuum chamber (1a) is subject to the pumping action of at least one pump arrangement (4), and where a possibly pulsed direct current is also applied to the induction coil (2) in order to influence the plasma density.

Abstract: A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency ?, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency ? of rotation of the magnet other than the first harmonic.

Abstract: A vacuum treatment apparatus and method for manufacturing has a plurality of treatment chambers for treating workpieces, in particular silicon wafers, a transfer chamber attached to the treatment chambers communicating via respective openings and having handling zones located adjacent to each of the treatment chambers. A workpiece carrier is arranged within the transfer chamber and configured to transfer the workpieces between the handling zones, and one or more handlers for moving the workpieces between the handling zones and the treatment chambers. The transfer chamber is ring-shaped about an axis and the openings have opening substantially parallel thereto. This way, forces on the transfer chamber are redirected to a large support structure and thus, a cost-effective, light and still rigid mechanical construction can be achieved.

Abstract: Apparatus (1, 26) for depositing a layer (37, 38, 39) on a substrate (2) in a process gas comprises a chuck (3) comprising a first surface (4) for supporting the substrate (2), a clamp (4) for securing the substrate (2) to the first surface (14) of the chuck (3), an evacuatable enclosure (5) enclosing the chuck (3) and the clamp (4) and comprising an inlet, through which the processing gas is insertable into the enclosure (5), and control apparatus (19). The control apparatus (19) is adapted to move at least one of the chuck (3) and the clamp (4) relative to, and independently of, one another to adjust a spacing between the chuck (3) and the clamp (4) during a single deposition process whilst maintaining a flow of the processing gas and a pressure within the enclosure (5) that is less than atmospheric pressure.

Abstract: An etching chamber is equipped with an actively-cooled element preferentially adsorbs volatile compounds that are evolved from a polymeric layer of a wafer during etching, which compounds will act as contaminants if re-deposited on the wafer, for example on exposed metal contact portions where they may interfere with subsequent deposition of metal contact layers. In desirable embodiments, a getter sublimation pump is also provided in the etching chamber as a source of getter material. Methods of etching in such a chamber are also disclosed.

Abstract: So as to provide a target arrangement with improved mounting and dismounting ability, the target arrangement comprises a plate along a plane (E) which has a border (7) defined by a first wedge surface (5u) angled to the addressed general plane (E) and a second wedge surface (5l) which is substantially planar as well and angled with respect to the generic plane (E). The two wedge surfaces mutually convert in a direction along the addressed plane (E) and from a more central area of the plate outwardly.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

Abstract: In a method for injection molding molten materials, especially plastic, in a mold that has a mold surface which comes into contact with the material, at least one coating on the mold surface and a temperature-control means for the mold surface, the mold surface is cooled by the temperature-control means so that the molten material solidifies at the interface with the coating and an injection-molded part can be removed from the form. During this process the molten material is brought into contact with the coating on the mold surface, the thickness of said coating being selected in coordination with the heat penetration coefficient of the coating material such that a specified 60° gloss level and/or color value L is obtained for the injection-molded part.

Abstract: A magnetron sputtering apparatus comprises, within a vacuum chamber (1), a substrate support (2) holding a substrate (3) with an upward-facing plane substrate surface (4) which is to be coated. The substrate (3) may be a disk of, e.g., 200 mm diameter. At a distance from a centre plane (5) two oblong targets (7a, 7b) are symmetrically arranged which are inclined towards the centre plane (5) so as to enclose an acute angle (?; ??) of between 8° and 35° with the plane defined by the substrate surface (4). Above the substrate surface (4) a collimator (13) with equidistant rectangular collimator plates is arranged. With this configuration high uniformity of the coating is achievable, in particular, if the distance of the collimator (13) from the substrate surface (4) is chosen as a multiple n of the extension of the collimator (13) perpendicular to the said surface, preferably with n equalling 1 or 2, for suppressing ripple.

Abstract: A silicon wafer-based solar cell with a two-layer antireflective coating (ARC) combines a 10-30 nm thick hydrogen containing passivation layer (e.g. SiXNY:H) with a top layer of Nb2O5 (or NbXOY in general) for optimal matching the refractive index of the ARC to cover materials having a refractive index of about 1.5 (e.g. glass or EVA, Ethylene Vinyl Acetate). The two-layer ARC can be deposited either by PECVD or by reactive sputtering (PVD) of a Si target with N2 and/or NH3, and the Nb2O5 layer is deposited by reactive sputtering of either a pure Nb target or a conductive Nb2Ox (x<5) target with O2.

Abstract: An exhaust opening of a process chamber (12) contained in a vacuum chamber (11) is connected to an exhaust line (13) by a connector comprising a bellows (03) with one end which is connected to the exhaust line (13) fixed to a housing and its opposite end carrying a coupling tube (02) for connecting to a coupling ring (01) which surrounds the exhaust opening, the coupling tube (02) being elastically biased towards the same. The coupling tube (02) can be moved between a connected state where it is in contact with the coupling ring (01) and a disconnected state by an actuator reciprocatable in an axial direction perpendicular to the exhaust opening. To enable a gas-tight connection with the process chamber (12) the coupling tube (02) has lateral play such that it can align with the coupling ring (01) when a conical surface of the coupling tube (02) contacts a complementary conical surface on the coupling ring (01) in the connected state.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm2 is provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

Abstract: Liquid precursor material of a coating substance and a solvent is provided in a reservoir (STEP1, STEP1?). In one variant the liquid precursor material is distilled (STEP2), the resultant liquid coating substance is vaporized (STEP3) and ejected through a vapour distribution nozzle arrangement (7) into a vacuum recipient (3) and onto substrate 5 to be coated. Alternatively, the liquid precursor material is directly vaporized (STEP3?). From the two-component vapour coating substance vapour is applied to substrate 5? to be coated. In this variant separation of solvent vapour and coating substance vapour is performed especially downstream vaporizing (STEP2?).

Abstract: A wafer holder and temperature controlling arrangement has a metal circular wafer carrier plate, which covers a heater compartment. In the heater compartment a multitude of heater lamp tubes is arranged, which directly acts upon the circular wafer carrier plate. Latter is drivingly rotatable about the central axis. A wafer is held on the circular wafer carrier plate by means of a weight-ring residing upon the periphery of a wafer deposited on the wafer carrier plate.

Abstract: A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency ?, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency ? of rotation of the magnet other than the first harmonic.

Abstract: Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity.

Abstract: A method for the deposition of an anti-reflection film on a substrate is disclosed. A substrate including a plurality of solar cell structures is provided and placed in a vacuum chamber with a target including silicon. A flow of a nitrogen-containing reactive gas into the vacuum chamber is set to a first value while a voltage between the target and ground is switched off and then increased to a second value. A voltage is applied between the target and ground, whereby a film of silicon and nitrogen is deposited on the substrate in a flow of the nitrogen-containing reactive gas which is higher than the first value.

Abstract: The present invention provides a method for fabricating a supercapacitor-like electronic battery. The steps for fabricating a supercapacitor-like electronic battery are as follows. A first current collector is formed on a substrate. A first electrode is formed on the first current collector. A first electrode is formed from a first solid state electrolyte and a first conductive material where the first conductive material is irreversible to the mobile ions contained in the first solid state electrolyte and the first conductive material exceeds the percolation limit. An electrolyte is formed on the first electrode. A second electrode is formed on the electrolyte. The second electrode is formed from a second solid state electrolyte and a second conductive material where the second conductive material is irreversible to the mobile ions contained in the second solid state electrolyte and the second conductive material exceeds the percolation limit. A second current collector is formed on the second electrode.