Abstract: The present invention provides a power system for a vehicle The power system comprising a supercapacitor-like electronic battery that is connected to a battery charger. The battery charger provides energy to the supercapacitor-like electronic battery. A heater is operatively connected to the supercapacitor-like electronic battery to provide energy to heat the supercapacitor-like electronic battery thereby lowering the internal impedance of the supercapacitor-like electronic battery. A charging apparatus is operatively connected to the battery charger. A motor is operatively connected to the vehicle and the supercapacitor-like electronic battery. A feedback loop controller is operatively connected to the heater, the supercapacitor-like electronic battery and the motor.

Abstract: The apparatus (1) for coating a substrate (14) by reactive sputtering comprises an axis (8), at least two targets (11,12) in an arrangement symmetrically to said axis (8) and a power supply connected to the targets (11,12), wherein the targets are alternatively operable as cathode and anode. The method is a method for manufacturing a coated substrate (14) by coating a substrate (14) by reactive sputtering in an apparatus (1) comprising an axis (8). The method comprises a) providing a substrate (14) to be coated; b) providing at least two targets (11,12) in an arrangement symmetrically to said axis (8); c) alternatively operating said targets (11,12) as cathode and anode during coating. Preferably, the targets (11,12) are rotated during sputtering and/or the targets are arranged concentrically, with an innermost circular target surrounded by at least one ring-shaped outer target.

Abstract: Throughput of manufacturing thin-film solar panels by inline technique is made substantially independent from the time extent of different surface treatment steps by accordingly subdividing treatment steps in sub-steps performed in inline subsequent treatment stations. Treatment duration in each of the subsequent treatment stations is equal (?).

Abstract: A transport arrangement (100) for bi-directionally transporting substrates towards and from a load lock (5) comprises a first substrate handler (1) swivelable about a first axis (A1) and with at least two first substrate carriers (1a, 1b). A second substrate handler (20) swivelable about a second axis (A20) comprises at least four second substrate carriers (20a to 20d). First and second substrate carriers are mutually aligned respectively in one position of their respective swiveling trajectory paths as one of the first substrate carriers is aligned with one of the second substrate carriers and the other of the first substrate carriers is aligned with the load lock (5). The first substrate carriers (1a, 1b) are movable towards and from the load lock (5) once aligned there with and thereby form respectively external valves of the load lock (5).

Abstract: A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target.

Abstract: A magnetron source comprises a target (39) with a sputtering surface and a back surface. A magnet arrangement (30, 32, 19a, 19b) is drivingly moved along the backside of the target (39). A tunnel-shaped magnetron magnetic field is generated between an outer loop (30) and an inner loop (32) of the magnet arrangement. Elongated pivotable or rotatable permanent magnet arrangements (19a, 19b) of the magnet arrangement are provided in an interspace between the outer and inner loops (30, 32) of the overall arrangement.

Abstract: To provide, in a magnetron sputtering apparatus for coating a substrate with a material of high magnetic permeability, for a sufficient trapping field of at least 24 kA/m (300 Oe) field strength above a target surface a target assembly consists of target plates (34, 33, 32) separated by through-going slits (35, 36) which the magnetic field must cross and to a support plate (31) consisting of copper to which the backside of the target is fixed. In order to avoid any release of material from the support plate and deposition of the same on the substrate each of the slits (35, 36) is shaped in such a way that there is no line-of-sight connection between the gap at the target surface and the support plate (31) at the backside of the target through the slit, the latter having, e.g., two sections which are perpendicular to the target surface, one ending at the target surface and the other at the support plate, and which are laterally offset and connected by a third section which is parallel to the target surface.

Abstract: A method for the deposition of an anti-reflection film on a substrate is disclosed. A substrate including a plurality of solar cell structures is provided and placed in a vacuum chamber with a target including silicon. A flow of a nitrogen-containing reactive gas into the vacuum chamber is set to a first value while a voltage between the target and ground is switched off and then increased to a second value. A voltage is applied between the target and ground, whereby a film of silicon and nitrogen is deposited on the substrate in a flow of the nitrogen-containing reactive gas which is higher than the first value.

Abstract: A method of processing a substrate that displays out-gassing when placed in a vacuum comprises placing the substrate in a vacuum and performing an out-gassing treatment by heating the substrate to a temperature T1 and removing gaseous contamination emitted from the substrate until the out-gassing rate is determined by the diffusion of the substrate's contamination and thus essentially a steady state has been established. Afterwards, the temperature is lowered to a temperature T2 at which the diffusion rate of the substrate's contamination is lower than at T1. The substrate is further processed at said temperature T2 until the substrate has been covered with a film comprising a metal.

Abstract: A radiofrequency plasma reactor with first and second spaced electrodes has a concave surface facing a substrate supporting surface. A process area between the electrodes has a gas inlet for a process gas. A radiofrequency generator for frequencies greater than 13.56 MHz is connected to an electrode for generating a plasma discharge in and a gas outlet evacuates process gas. A dielectric layer has a convex surface engaging the concave electrode surface and an opposite planar surface. The substrate supporting surface receives a substrate of at least 0.7 m and defines a boundary of the process area to be exposed to the plasma. The dielectric layer is electrically in series with the substrate and plasma discharge and has capacitance per unit surface values which are not uniform for a distribution profile to compensate process non-uniformity along the working surface.

Abstract: A method for dividing substantially nonpolarized white light into three substantially nonpolarized fractions includes splitting the substantially nonpolarized white light into a first fraction and a second fraction, the first fraction being substantially nonpolarized light of a first wavelength interval and the second fraction of substantially nonpolarized light of a second and a third wavelength interval, the first wavelength interval being located between the second and the third wavelength interval and splitting the second fraction into a third fraction with substantially nonpolarized light of the second wavelength interval and into a fourth fraction with substantially nonpolarized light of the third wavelength interval.

Abstract: Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity.

Abstract: The invention relates to an installation, in particular a vacuum processing installation for processing a substrate (130), in particular a semiconductor wafer, comprising a processing station. Said installation comprises a frame (110), to which is clamped a carrier (120), for holding and/or transporting the substrate (130), whereby the latter (130) can be fastened by its entire surface to said carrier (120). The processing station preferably comprises a chuck electrode (140) with a flat outer surface (141) and the carrier (120) can be positioned parallel and adjacent to said outer surface (141) of the chuck electrode (140). The carrier is composed in particular of a non-conductive dielectric material and is provided on one side with a conductive layer (122), in such a way that the chuck electrode (140) and the carrier (120) form an electrostatic chuck.

Abstract: Apparatus for sputtering comprises a vacuum chamber defined by at least one side wall, a base and a cover, at least one first electrode having a surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least a portion of the side wall and/or the base of the vacuum chamber and an additional electrically conductive member. The additional electrically conductive member comprises at least two surfaces arranged generally parallel to one another and spaced at a distance from one another.

Abstract: A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.

Abstract: The invention relates to a method for positioning a wafer (3) with a reference mark (6) in a vacuum processing unit with a transport chamber containing a transport device (2, 20, 21) for moving the wafers (3) in a plane to a process chamber arranged on said chamber and a single sensor (1), arranged within the transport chamber before the process chamber for recording the position of the wafer (3) by means of recording the edge thereof at a first detection point (4) and a second detection point (5), such that the actual position of the wafer (12) with a known wafer diameter can be determined with electronic analysis of both measured detection points (4, 5) and the transport device (2, 20, 21) guides the wafer (3) to a desired set position.

Abstract: Magnetron source has a target configuration with a sputter surface, a magnet configuration generating above the sputter surface a magnetic field which forms, in top view onto the sputter surface, at least one magnet field loop. Viewed in a cross-sectional direction upon the target configuration, a tunnel-shaped arc magnet field is formed and further an electrode configuration is provided which generates, when supplied by a positive electric potential with respect to an electric potential applied to the target configuration, an electric field which crosses at an angle the magnetic field and wherein the electrode configuration comprises a distinct electrode arrangement in a limited segment area of the electrode configuration, which is substantially shorter than the overall length of the magnet field loop.

Abstract: A method of depositing a metallization structure (1) comprises depositing a TaN layer (4) by applying a power supply between an anode and a target in a plurality of pulses to reactively sputter Ta from the target onto the substrate (2) to form a TaN seed layer (4). A Ta layer (5) is deposited onto the TaN seed layer (4) by applying the power supply in a plurality of pulses and applying a high-frequency signal to a pedestal supporting the substrate (2) to generate a self-bias field adjacent to the substrate (2).

Abstract: A process apparatus for treatment of a substrate comprising a load chamber for loading the substrate, a process chamber for processing the substrate, a sealing plane separating the process chamber from the load chamber and means for vertically moving the substrate from the load chamber to the process chamber, and a method for treating the substrate are provided. The load chamber is located in one of the lower and upper portions of the process apparatus, and the process chamber is located in the other of the lower and upper portions of the process apparatus. The process apparatus and method of the present invention will provide easy maintenance and reduced costs by reducing the number of movements for loading the substrate.

Abstract: A method of manufacturing vacuum plasma treated workpieces includes the steps of introducing at least one workpiece to be treated into a vacuum chamber; treating the workpiece in the vacuum chamber, thereby establishing a plasma discharge in the vacuum chamber by a supply signal with maximum energy at a first frequency which is at least in the Hf frequency range; removing the workpiece treated from the vacuum chamber; performing a cleaning inside the vacuum chamber, thereby establishing the plasma discharge by a supply signal with maximum energy at a second frequency higher than the Hf frequency; and repeating these steps at least one time.