Abstract: A signal amplifier includes an inverting amplification circuit, a first switching element, a second switching element, and a control section. The inverting amplification circuit includes a first voltage terminal, a second voltage terminal, an inverting input terminal, an output terminal, a first protected switching element, and a second protected switching element. The control section controls such that when an overcurrent has flowed in the first voltage line, the first and second protected switching elements are switched to a non-conducting state after switching the first switching element in a conducting state and switching the second switching element in a non-conducting state, and when an overcurrent has flowed in the second voltage line, the first the second protected switching elements are switched to a non-conducting state after switching the first switching element in a non-conducting state and switching the second switching element in a conducting state.

Abstract: An improved probe card maintenance method is capable of accurately, rapidly, and easily performing the maintenance of a probe card. The probe card is a jig adapted to test the electrical properties of semiconductor integrated circuits. The electrical properties of the semiconductor integrated circuits are tested at a predetermined test temperature. The probe card has a plurality of probes thereon. The probe card maintenance method includes heating the probe card and the probes on the probe card to the same temperature as the test temperature. The method also includes adjusting positions and postures of the defective probes while maintaining the temperature of the probe card and the probes at the test temperature.

Abstract: A semiconductor package including a semiconductor chip; a base member on which the semiconductor chip is mounted; a plurality of leads formed on the base member, the leads including inner ends electrically connected to the semiconductor chip and outer ends; and an index for identifying locations of specific leads.

Abstract: There is provided a semiconductor device including: an insulating layer provided on a substrate and formed with plural cavities; wiring lines provided on the insulating layer; plural branched wiring lines that branch from the wiring lines so as to respectively overlap with the plural cavities when seen in plan view; a conductive portion formed on the wiring lines; an external terminal formed on the conductive portion; and a sealing resin layer that seals the wiring lines and the conductive portion.

Abstract: A test apparatus for testing semiconductor integrated circuits includes a test head, a probe card holder for detachably holding a probe card that probes a semiconductor device, a heater for heating the probe card, and a heater holder that holds the heater in direct contact with the probe card when the probe card is held by the probe card holder. The test apparatus heats the probe card efficiently and thereby reduces test time and cost.

Abstract: A bias potential generating circuit includes a clock supply circuit that generates a clock signal having a predetermined frequency; a rising sine wave generating circuit that generates a rising wave form signal having a wave form of a rising portion of a sine wave; a ?? conversion circuit that generates a pulse width modulation signal by pulse width modulating the rising wave form signal; a first resistor, one end connected to a reference potential input terminal of an operational amplifier; a second resistor, one end connected to the first resistor and to the reference potential input terminal of the operational amplifier, and the other end being grounded; and a switch connected to a power supply and to the other end of the first resistor, the switch being turned ON and OFF by the pulse width modulation signal.

Abstract: A plasma monitoring method measures in-situ a resistance of and a current flowing in a side wall. A monitoring system has two sensors in a plasma chamber, each having upper and lower electrodes. An external resistance element is connected only to one of the two sensors, in parallel to the wires extending from the upper and lower electrodes of the sensor concerned. Consequently, a resistance between the upper and lower electrodes is different in the two sensors, and two different values of potential difference between the upper and lower electrodes are obtained in-situ. Because a resistance value of the external resistance element is known, a resistance value of a side wall of a contact hole per one contact hole is obtained in-situ, and consequently an electric current flowing in the side wall of the contact hole per one contact hole can be obtained.

Abstract: A semiconductor device that includes a circuit portion, a first light-shielding film and plural second light-shielding films. In the circuit portion, a plurality of wiring layers that include circuit elements are laminated. The first light-shielding film covers an uppermost layer of the wiring layers and light-shields light that is illuminated at the circuit portion. The second light-shielding films are covered by the first light shielding film and formed so as to respectively encircle the wiring layers in ring forms. Outer peripheries of the plural second light-shielding films are formed to be successively smaller from an upper to a lower layer, so as to be at the inner side relative to the outer periphery of the second light-shielding film of the upper layer.

Abstract: In a signal processor including storage sections, a start address for starting output of data from an external memory, is input from an external controller to the start address input section. The signal output section outputs a start signal based on a download start instruction from the external controller, and outputs an end signal when download is completed. The output instruction section outputs, based on the start signal, to the external memory a data output instruction of download data for a designated storage section, starting from the start address, and stops output of the data output instruction based on the end signal. The write instruction section outputs a write instruction to the storage sections that allows data writing only to the designated storage section, and the download data is written to the designated storage section when the start signal is input to the output instruction section.

Abstract: A gravity axis determination apparatus which can determine the gravity direction in a short time. The apparatus is low in cost and has a simple construction. Data values of acceleration data trains in a same time zone are mutually compared and one of the three axes is determined as a gravity axis.

Abstract: A wafer transfer device and method capable of preventing a wafer from falling off of a carrier. A first carrier receiver holding a first carrier has a box-like shape having an opening through which the first carrier is attached/removed to/from the first carrier receiving member. A second carrier receiver holding a second carrier has a box-like shape having an opening through which the second carrier is attached/removed to/from the first carrier receiving member. The first carrier and the second carrier can be attached/removed to/from the first carrier receiver and the second carrier receiver, respectively. Owing to such a configuration, it is possible to prevent a wafer received in the first carrier and the second carrier from falling off from the first carrier and the second carrier, respectively.

Abstract: A BGA substrate which has a back surface to which a heat radiating plate is attached and an opening for accommodating a relay wiring substrate therein, which is provided in the center of its surface, is used. The relay wiring substrate to which an ASIC chip and a memory chip are flip-chip connected, is bonded to the heat radiating plate in the opening with a thermal conductive bonding material. Further, each of the back surfaces of the ASIC chip and the memory chip is connected to a metal cap for sealing the opening through a thermal conductive material interposed therebetween.

Abstract: A semiconductor device includes first, second and third power supply terminals respectively supplied with first, second and third power supply voltages. The semiconductor device also includes a first terminal connectable to a host device and a second terminal connectable to a peripheral device. The semiconductor device also includes a first circuit block connected to the first terminal and the first power supply terminal and receiving data output from the host device based on the first power supply voltage, a second circuit block connected to the second terminal and the third power supply terminal and receiving data output from the peripheral device based on the third power supply voltage, and a third circuit block connected to the second power supply terminal and controlling operation of the first circuit block and the second circuit block based on the second power supply voltage.

Abstract: An electronic device includes a wireless receiving circuit for receiving signals transmitted from a remote control unit, a core circuit having a digital signal processing circuit for processing input signals and configured to perform at least one of display processing and record processing based on signals processed in the digital signal processing circuit in accordance with a control signal transmitted from the remote control unit and received by the wireless receiving circuit, and a preliminary activation circuit for starting electric power supply to the digital signal processing circuit to thereby activate the digital signal processing circuit when a pre-operation state where the remote control unit is expected to be operated during stoppage of electric power supply to the core circuit has occurred.

Abstract: In a semiconductor circuit, a high frequency level detecting unit detects a level of a high frequency component adjusted with a first adjusting unit, and a first control unit controls a first gain of the adjusting unit according to the level of the high frequency component thus detected. Further, a low frequency level detecting unit detects a level of a low frequency component adjusted with a second adjusting unit. A second control unit controls a second gain according to the level of the high frequency component and the level of the low frequency component thus adjusted, so that a difference between the level of the high frequency component adjusted with the first adjusting unit and the level of the low frequency component adjusted with the second adjusting unit becomes smaller than a specific level determined in advance.

Abstract: A folded cascode differential amplifier includes a high-voltage input stage and a low-voltage output stage. The input stage is formed from high-voltage MOS transistors, two of which constitute a differential pair. The output stage is formed from low-voltage MOS transistors, some of which constitute a current mirror circuit connected to the differential pair. The output stage also includes at least one transistor that amplifies a voltage produced in the current mirror circuit to generate an output voltage signal. The high-voltage MOS transistors have higher breakdown voltages than the low-voltage MOS transistors. Incorporation of both types of transistors into a single amplifier reduces the necessary number of transistors and the necessary number of bias voltages.

Abstract: A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diffusion layer. A method of producing the photodiode includes the steps of: forming an insulation material layer on the silicon semiconductor layer after the P-type impurity and the N-type impurity are implanted into the low concentration diffusion layer, the P-type high concentration diffusion layer, and the N-type high concentration diffusion layer; forming an opening portion in the insulation material layer in an area for forming the low concentration diffusion layer; and etching the silicon semiconductor layer in the area for forming the low concentration diffusion layer so that a thickness of the silicon semiconductor layer is reduced to a specific level.

Abstract: A semiconductor device manufacturing method includes a process for filling holes in a dielectric film with tungsten. The process deposits tungsten in the holes, partially etches the deposited tungsten, and then deposits additional tungsten in the holes. Voids that may be left by the first tungsten deposition step are made accessible by openings formed in the etching step, and are then filled in by the second tungsten deposition step. Tungsten hexafluoride may be used as both a deposition source gas and an etching gas, providing a simple and inexpensive process that is suitable for high-volume production.

Abstract: An exemplary memory device has at least one memory chip that stores data and error correcting information. An error detecting circuit in the memory chip performs a calculation on the data and error correcting information to obtain error detection information indicating the locations of bit errors in the data. The uncorrected data and the error detection information are output from the memory chip. The uncorrected data and error detection information may also be output from the memory device, or the memory device may include a memory controller chip with an error correcting circuit that uses the error detection information to correct the bit errors and outputs corrected data from the memory device.

Abstract: Semiconductor elements and methods for fabricating semiconductor elements that allow semiconductor elements having the same function to utilize different packaging methods. An exemplary semiconductor element includes a first semiconductor element portion, including an internal circuit, electrodes electrically connected to the internal circuit, and a first insulating layer covering the internal circuit while exposing the electrodes; and a second semiconductor element portion electrically connected to the electrodes and formed on the first insulating layer, the second semiconductor element portion including a wiring layer having a first pad and a second pad, and a second insulating layer configured to cover either one of the first pad or the second pad while exposing the other one of the first pad and the second pad.