Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity.

Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.

Abstract: Embodiments of the present disclosure related to a head mounted display (HMD) that enable adjustment of lenses for a particular consumer. In some example embodiments, the HMD enables up to three-degrees of freedom of lens alignment with a consumer's pupils. For example, the HMD includes an actuation device or rotatable disc, both of which are in slidable engagement with at least one elongated members. Ends of the elongated members are coupled to a mirror/lens such that actuation of the actuation device or rotation of the disc translates the elongated member along an axis, which is in general alignment with a pupillary distance (PD) of the consumer. Additionally, the elongated members include mirror/lens interfaces to which the lenses are coupled. The mirror/lens interfaces are slidably and rotatably coupled to the elongated members thereby providing additional degrees of freedom for movement of the lenses.

Abstract: An EMI shield for a camera module subassembly includes a first conductive portion covering an optical unit and a top surface of a circuit substrate of the camera module subassembly and a second conductive portion covering a bottom surface of the circuit substrate, such that the two portions are in contact. The EMI shield can also include an extension to cover a flexible circuit substrate and its connector, as well as can include an EMI attenuator over an aperture formed in the first conductive portion above the optical unit. The EMI shield of the invention provides improved EMI shielding and EM compatibility at the camera module packaging level, especially for frequencies in the megahertz and gigahertz range, by shielding substantially all of the camera module subassembly.

Abstract: A microchip includes a passivation layer formed over underlying circuitry, a redistribution layer formed over the passivation layer, and a cap layer formed over the redistribution conductors of the redistribution layer and in contact with the passivation layer. The passivation layer and the cap layer have one or more compatibilities that provide sufficient adhesion between those two layers to prevent metal migration from the conductors of the redistribution layer between the interfaces of the passivation and cap layers. In one embodiment, the passivation and cap layers are each formed from an inorganic oxide (e.g., SiO2) using a process (e.g., PECVD) that provides substantially-uniform step coverage by the cap layer in trench and via regions of underlying circuitry. The invention increases the reliability of the microchip, because it eliminates metal migration, and the electrical shorting caused therefrom, in the redistribution layer.

Abstract: A microchip includes a passivation layer formed over underlying circuitry, a redistribution layer formed over the passivation layer, and a cap layer formed over the redistribution conductors of the redistribution layer and in contact with the passivation layer. The passivation layer and the cap layer have one or more compatibilities that provide sufficient adhesion between those two layers to prevent metal migration from the conductors of the redistribution layer between the interfaces of the passivation and cap layers. In one embodiment, the passivation and cap layers are each formed from an inorganic oxide (e.g., SiO2) using a process (e.g., PECVD) that provides substantially-uniform step coverage by the cap layer in trench and via regions of underlying circuitry. The invention increases the reliability of the microchip, because it eliminates metal migration, and the electrical shorting caused therefrom, in the redistribution layer.

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material between a first side and a second side of the semiconductor material. The image sensor also includes a plurality of hybrid deep trench isolation (DTI) structures disposed in the semiconductor material, where individual photodiodes in the plurality of photodiodes are separated by individual hybrid DTI structures. The individual hybrid DTI structures include a shallow portion that extends from the first side towards the second side of the semiconductor material, and the shallow portion includes a dielectric region and a metal region such that at least part of the dielectric region is disposed between the semiconductor material and the metal region. The hybrid DTI structures also include a deep portion that extends from the shallow portion and is disposed between the shallow portion and the second side of the semiconductor material.

Abstract: A method for processing a plurality of images of a scene recorded from different vantage points, where the plurality of images includes a color reference image captured by a Bayer type camera and at least one additional image, the method including (a) registering at least a portion of the plurality of images, and (b) generating a unitary color image from the plurality of images, wherein color information of the unitary color image is determined exclusively from the color reference image.

Abstract: A wafer-level array camera includes (i) an image sensor wafer including an image sensor array, (ii) a spacer disposed on the image sensor wafer, and (iii) a lens wafer disposed on the spacer, wherein the lens wafer includes a lens array. A method for fabricating a plurality of wafer-level array cameras includes (i) disposing a lens wafer, including a plurality of lens arrays, on an image sensor wafer, including a plurality of image sensor arrays, to form a composite wafer and (ii) dicing the composite wafer to form the plurality of wafer-level array cameras, wherein each of the plurality of wafer-level array cameras includes a respective one of the plurality of lens arrays and a respective one of the plurality of image sensor arrays.

Abstract: A wafer-level lens forming method for forming an aperture wafer wherein the aperture wafer is stacked with one or more lens wafers to form apertured lens systems. The aperture wafer is formed by lithographically depositing an opaque layer on a transparent film, which is supported by a substrate. The aperture wafer is stacked with one or more lens wafers, and appropriate spacing between the wafers is set with spacer wafers. The substrate is removed, and the lens and aperture wafers are adhered together in a stack to form an optical system. The method avoids accumulation of residual material on the lens during the opaque-layer deposition process. The resulting optical system benefits from added flexibility of the lens system design due to the ability to locate the aperture with respect to one or more lenses independently of the lens wafers.

Abstract: Suspended lenses in a spacer wafer and lens-in-a-pocket structures are replicated from UV-transparent molds. The fabrication of UV-transparent molds can include providing a substrate with pedestals, fabricating a lens on each pedestal using a step-and-repeat process, replicating an intermediate mold from the substrate with pedestals having lenses on the pedestals, and replicating a UV-transparent mold from the intermediate mold. The fabrication of UV-transparent molds can also include providing a substrate with holes, fabricating a lens in each hole and replicating a UV-transparent mold from the substrate with the holes having the lenses.

Abstract: An imaging sensor pixel comprises a highly resistive N? doped semiconductor layer with a front side and a back side. At the front side, there are at least a light sensing region, a transfer gate adjacent to the light sensing region and a P-well region. The P-well region surrounds the light sensing region and the transfer gate region, and comprises at least a floating diffusion region and a first electrode outside of the floating diffusion region, wherein a first negative voltage is applied to the first electrode. The transfer gate couples between the light sensing region and the floating diffusion region. At the back side, there is a back side P+ doped layer comprising a second electrode formed on the back side P+ doped layer, wherein a second negative voltage is applied to the second electrode. The second negative voltage is more negative than the first negative voltage.

Abstract: A novel method of forming an alignment layer of a liquid crystal display device includes the steps of providing a substrate (e.g., a processed silicon wafer, etc.) having an alignment layer material deposited thereon and applying a series of pulses from a pulse laser to anneal portions of the alignment layer material and alter its surface morphology. The method can include the step of depositing the alignment layer material (e.g., a spin-on dielectric including SiO2) over the substrate using a spin-on process prior to laser annealing. Applying the series of laser pulses creates a repetitive pattern of features that facilitate alignment of liquid crystals according to a laser scan trace. Liquid crystal display devices with laser-annealed alignment layer(s) are also disclosed. The alignment layers of the invention are quickly and inexpensively applied and are very robust under prolonged, high-intensity light stress.

Abstract: A display system includes a pixel array, a data buffer and a display driver. In a particular embodiment the data buffer receives and stores frames of image data and provides the frames of image data to the pixel array. The display driver overwrites an entire frame of image data on the data buffer during some frame times and selectively overwrites a portion of a frame of image data, leaving another portion of the frame of image data in the data buffer, during other frame times.

Abstract: A method for removing a ghost artifact from a multiple-exposure image of a scene method includes steps of generating and segmenting a difference mask, determining a lower threshold and an upper threshold, generating a refined mask, and generating a corrected image. The difference mask includes a plurality of absolute differences in luminance-values between the multiple-exposure image and a first image of the scene. The segmenting step involves segmenting the difference mask into a plurality of blocks. The lower and upper thresholds are based on statistical properties of the blocks. The method generates the refined mask by mapping each absolute difference to a respective one of a plurality refined values, of the refined mask, equal to a function of the absolute difference, the lower threshold, and the upper threshold. The corrected image is a weighted sum of the first image and the multiple-exposure image, weights being based on the refined mask.

Abstract: A stacked-lens assembly includes a lower substrate and an upper substrate. The lower substrate includes a lower-substrate top surface having thereon a lower element and an inner spacer, the inner spacer at least partially surrounding the lower element. The upper substrate includes an upper-substrate bottom surface opposite the lower-substrate top surface and having thereon an upper element and an outer spacer, the outer spacer (i) being attached to the inner spacer and (ii) at least partially surrounding the upper element. In any cross-section of the stacked-lens assembly parallel to the upper substrate and including both the inner spacer and the outer spacer, the entirety of the inner spacer is within a perimeter of the outer spacer.

Abstract: An image sensor includes a semiconductor material having an illuminated surface and a non-illuminated surface. A plurality of photodiodes is disposed in the semiconductor material to receive image light through the illuminated surface. The semiconductor material includes silicon and germanium, and the germanium concentration increases in a direction of the non-illuminated surface. A plurality of isolation regions is disposed between individual photodiodes in the plurality of photodiodes. The plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

Abstract: A method of one aspect may include receiving an encapsulated image acquisition device having an internal memory. The internal memory may store images acquired by the encapsulated image acquisition device. The images may be transferred from the internal memory to an external memory that is external to the encapsulated image acquisition device. An image analysis station may be selected from among a plurality of image analysis stations to analyze the images. The images may be analyzed with the selected image analysis station. Other methods, systems, and kits are also disclosed.

Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.

Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.