Abstract: Methods and apparatuses for data transmission in an image sensor are disclosed herein. An example data transmission circuit may include a plurality of transmission banks coupled in series with a first one of the plurality of transmission banks coupled to function logic, where each of the plurality of transmission banks are coupled to provide image data to a subsequent transmission bank in a direction toward the function logic in response to a clock signal, a plurality of delays coupled in series, wherein each of the plurality of delays is associated with and coupled to a respective transmission bank of the plurality of transmission banks, and wherein the clock signal is received by each of the plurality of transmission banks after being delayed by a respective number of delays of the plurality of delays in relation to the function logic.

Abstract: A liquid crystal display device includes a first substrate, a pixel array formed on the first substrate, a transparent substrate, a liquid crystal layer disposed between the pixel array and the transparent substrate, a transparent electrode disposed between the transparent substrate and the liquid crystal layer, and an input electrode. The transparent electrode has a longer first edge and an orthogonal shorter second edge. The input electrode extends along, and is electrically coupled along, the first edge of the transparent electrode and has lower impedance than a portion of the transparent electrode overlying the pixel array. The input electrode can include additional portion(s) that extend along, and that are electrically-coupled along, the other edges of the transparent electrode. The input electrode reduces the common voltage propagation delay across the transparent electrode and improves reduces intensity variation over the display area, even for high-frequency common voltage waveforms.

Abstract: Image sensors with precharge boost are disclosed herein. An example image sensor may include pixels that each include a photodiode to receive image light and produce image charge in response, a floating diffusion to receive the image charge, a transfer gate to couple the photodiode to the floating diffusion in response to a transfer control signal, a reset gate to couple a reset voltage to the floating diffusion in response to a reset control signal, and a boost capacitor coupled between the floating diffusion and a boost voltage source, wherein, during a precharge operation, the boost voltage is provided to the boost capacitor for a portion of time the transfer gate is enabled and while the reset gate is disabled.

Abstract: A camera system has a lens focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array. An image processor captures at least a first image with the deflector system in a first position and a second image with the deflector system in a second position to provide a focal point offset in a first axis on the photosensor array, and the firmware is configured to prepare an enhanced image from at least the first and second images. A method of imaging includes focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array; receiving at least a first image with the deflector system in a first position; receiving a second image with the deflector system configured providing a focal point offset on the photosensor array; and preparing an enhanced image from the first and second images.

Abstract: An apparatus and method for a low dark current floating diffusion is discussed. An example method includes coupling a photodiode to a floating diffusion through a transfer gate where a gate terminal of the transfer gate is provided a first voltage, resetting the floating diffusion, repetitively sampling image charge on the photodiode a plurality of times, where the sampled image charge is coupled to the floating diffusion, and where the gate terminal of the transfer gate is provided a second voltage less than the first voltage during each sampling of the image charge, while repetitively sampling the image charge, coupling an additional capacitance to the floating diffusion, where a first capacitance voltage is applied to the additional capacitance during the sampling, and performing correlated double sampling of the sampled image charge.

Abstract: A lane detection system includes a non-volatile memory storing machine-readable instructions and an image processor capable of receiving a road image. The image processor, when executing the machine-readable instructions, is capable of: (i) processing the road image to identify a lane candidate within a lane-existing region of the road image, the lane-existing region having (a) a near subregion including an imaged road region nearer to the vehicle and (b) a far subregion including an imaged road region farther from the vehicle, (ii) verifying the lane candidate as a true lane candidate when a minimum distance between (a) a line fit to a portion of the lane candidate in the near subregion and (b) a predetermined reference point in the road image is less than a neighborhood distance; and (iii) extending the true lane candidate into the far subregion to form a detected lane marker demarcating the lane marker.

Abstract: A lane departure warning system includes a memory and a processor for validating a candidate region as including an image of a lane marker on the road is disclosed. The candidate region is identified within a latest road image of a temporal sequence of road images captured from the front of a vehicle traveling along a road. The memory stores non-transitory computer-readable instructions and adapted to store the road image. The image processor is adapted to execute the instructions to, when no previously-verified region and no previously-rejected region aligns with the candidate region: (i) determine a minimum distance between the candidate region and a previously-verified region of a previously-captured road image of the sequence, (ii) when the minimum distance exceeds a threshold distance, store the candidate region as a verified region, and (iii) when the minimum distance is less than the threshold distance, store the candidate region as a rejected region.

Abstract: A method of image sensor fabrication includes growing a semiconductor material having an illuminated surface and a non-illuminated surface, where the semiconductor material includes silicon and germanium and a germanium concentration increases in a direction of the non-illuminated surface. The method further includes forming a plurality of photodiodes, including a doped region and a heavily doped region, in the semiconductor material, where the doped region is of an opposite majority charge carrier type as the heavily doped region. A plurality of isolation regions are formed and disposed between individual photodiodes in the plurality of photodiodes, where the plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a plurality of transfer transistors. Individual transfer transistors in the plurality of transfer transistors are coupled to individual photodiodes in the plurality of photodiodes. A floating diffusion is also coupled to the plurality of transfer transistors to receive image charge from the plurality of photodiodes. The floating diffusion is coupled to receive a preset voltage, and the preset voltage is substantially equal a dark condition steady-state read voltage.

Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

Abstract: In an embodiment, a slim imager is disclosed. The slim imager includes a substrate including an aperture, an image sensor, and an optics unit. The image sensor is on a bottom side of the substrate, spans the aperture, and has an aperture-facing top surface. The optics unit is on a top side of the substrate, spans the aperture, and includes a transmissive optical element having an aperture-facing bottom surface. A volume partially bound by the aperture-facing top surface and the aperture-facing bottom surface has a refractive index less than 1.01 at visible wavelengths.

Abstract: An image sensor includes a plurality of photodiodes and a floating diffusion disposed in a semiconductor material. The image sensor also includes a plurality of transfer gates coupled between the plurality of photodiodes and the floating diffusion to transfer the image charge generated in the plurality of photodiodes into the floating diffusion. Peripheral circuitry is disposed proximate to the plurality of photodiodes and coupled to receive the image charge from the plurality of photodiodes. A shallow trench isolation structure is laterally disposed, at least in part, between the plurality of photodiodes and the peripheral circuitry to prevent electrical crosstalk between the plurality of photodiodes and the peripheral circuitry. The peripheral circuitry includes one or more transistors including a source electrode and a drain electrode that are raised above a surface of the semiconductor material.

Abstract: Apparatuses and method for an image sensor with increased analog to digital conversion range and reduced noise are described herein. An example method may include disabling a first auto-zero switch of a comparator, the first auto-zero switch coupled to auto-zero a reference voltage input of the comparator, adjusting an auto-zero offset voltage of a ramp voltage provided to the reference voltage input of the comparator, and disabling a second auto-zero switch of the comparator, the second auto-zero switch coupled to auto-zero a bitline input of the comparator.

Abstract: A phase detection autofocus image sensor includes a first photodiode in a plurality of photodiodes disposed in a semiconductor material and a second photodiode in the plurality of photodiodes. A first pinning well is disposed between the first photodiode and the second photodiode, and the first pinning well includes a first trench isolation structure that extends from a first surface of the semiconductor material into the semiconductor material a first depth. A second trench isolation structure is disposed in the semiconductor material and surrounds the first photodiode and the second photodiode. The second trench isolation structure extends from the first surface of the semiconductor material into the semiconductor material a second depth, and the second depth is greater than the first depth.

Abstract: An ultra-small camera module with wide field of view includes (a) a wafer-level lens system for forming, on an image plane, an image of a wide field-of-view scene, wherein the wafer-level lens system includes (i) a distal planar surface positioned closest to the scene and no more than 2.5 millimeters away from the image plane in direction along optical axis of the wafer-level lens system, and (ii) a plurality of lens elements optically coupled in series along the optical axis, each of the lens elements having a curved surface, and (b) an image sensor mechanically coupled to the wafer-level lens system and including a rectangular array of photosensitive pixels, positioned at the image plane, for capturing the image, wherein cross section of the ultra-small camera module, orthogonal to the optical axis, is rectangular with side lengths no greater than 1.5 millimeters.

Abstract: An image sensor includes a substrate, a first set of sensor pixels formed on the substrate, and a second set of sensor pixels formed on the substrate. The sensor pixels of the first set are arranged in rows and columns and are configured to detect light within a first range of wavelengths (e.g., white light). The sensor pixels of the second set are arranged in rows and columns and are each configured to detect light within one of a set of ranges of wavelengths (e.g., red, green, and blue). Each range of wavelengths of the set of ranges of wavelengths is a subrange of said first range of wavelengths, and each pixel of the second set of pixels is smaller than each pixel of the first set of pixels.

Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.

Abstract: An example method for fast ramp start-up during analog to digital conversion (ADC) includes opening a feedback bypass switch coupled to an amplifier to initiate an ADC operation, providing an injection current pulse to an inverting input of the amplifier, where the non-inverting input is coupled to a feedback bypass switch, integrating a first reference current coupled to the inverting input of the amplifier, where the integrating of the first reference current occurs due to the opening of the feedback bypass switch, and providing a reference voltage in response to the injection current pulse, the integrating of the first reference current, and a reference voltage coupled to a non-inverting input of the amplifier, where a level of the reference voltage is increased at least at initiation of the ADC operation in response to the injection current pulse.

Abstract: An image sensor for capturing both visible light images and infrared light images includes a semiconductor substrate having length, width, and height, a plurality of visible light photodetectors disposed in the semiconductor substrate, and a plurality of combination light photodetectors disposed in the semiconductor substrate. Each of the plurality of visible light photodetectors has a respective depth in the height direction, and each of the plurality of combination light photodetectors has a respective depth in the height direction that is greater than the respective depth of each of the plurality of visible light photodetectors.