Abstract: A method of automatic white balance for an image capture system is disclosed. The automatic white balance mechanism ascertains the illuminant source of an image by analyzing the number of white pixels within a predefined white area in a color space diagram. The automatic white balance mechanism also determines gain adjustments based on the evaluating the average RGB values to achieve white balance.
Abstract: A driver circuit includes a pre-driver and an output driver. The pre-driver is coupled to receive an input signal and to generate first and second pre-driver output signals in response to the input signal. The output driver generates a driver output signal and includes first and second switches, a native mode transistor, and a driver output. The first switch has a first control terminal coupled to receive the first pre-driver output signal. The second switch has a second control terminal coupled to receive the second pre-driver output signal. The native mode transistor is coupled in series between the first switch and the second switch and has a third control terminal coupled to receive the voltage reference signal. The driver output is coupled between the native mode transistor and the second switch to output the driver output signal.
Abstract: A dual-mode projection apparatus has a projection module for projecting an image onto a projection surface. An image sensor module captures images of the projection surface and determines spatial and temporal characteristics of a visible light spot superimposed on the projection surface. A communications module transmits the spatial and temporal characteristics of the visible light spot to a remote device for remote control of the device based on the spatial and temporal characteristics of the visible light spot.
Abstract: A software product includes instructions stored on computer-readable media, that when executed by a computer, perform steps for optimizing an optical system design and a digital system design. The instructions are for simulating an optical model of the optical system design, simulating a digital model of the digital system design, analyzing simulated output of the optical model and simulated output of the digital model, to produce a score, modifying the optical model and the digital model, based upon the score, controlling re-execution of the instructions for simulating the optical model, the instructions for simulating the digital model, the instructions for analyzing and the instructions for modifying to produce an optimized optical model and an optimized digital model, and outputting predicted performance of the optimized optical and digital models.
Type:
Grant
Filed:
December 22, 2008
Date of Patent:
December 28, 2010
Assignee:
OmniVision Technologies, Inc.
Inventors:
Edward R. Dowski, Jr., Gregory E. Johnson, Kenneth S. Kubala, Kenneth Ashley Macon, Goran M. Rauker
Abstract: An apparatus for measuring the power frequency of a light source includes a photo-sensitive transistor, a modulators and a logic unit. The photo-sensitive transistor generates an electrical signal that is responsive to light incident thereon from the light source. The modulator generates a modulated signal based on the electrical signal that toggles at a rate substantially proportional to the power frequency of the light source. The logic unit is coupled to receive the modulated signal and determine its toggling frequency.
Abstract: An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.
Abstract: An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.
Type:
Grant
Filed:
October 15, 2007
Date of Patent:
November 2, 2010
Assignee:
OmniVision Technologies, Inc.
Inventors:
Sohei Manabe, Ashish Shah, Sasidhar Saladi, William Qian, Hidetoshi Nozaki, Nagaraja Satyadev, Hsin-Chih (Dyson) Tai, Howard M. Rhodes
Abstract: The present disclosure provides methods and systems for image processing by locally adaptive filters that preserve the edges while smoothing the image. In the exemplary method, a filter adjusts image pixel values utilizing a locally adaptive weighted average method. To adjust the value of a target pixel, the filter uses the data corresponding to some of its surrounding pixels and modifies the weights in an inverse relation with both their distance from the target pixel and the difference between their data. Various embodiments present different schemes for selection of surrounding pixels and computation of weighted average values.
Abstract: A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.
Type:
Grant
Filed:
August 27, 2008
Date of Patent:
October 26, 2010
Assignee:
OmniVision Technologies, Inc.
Inventors:
Sohei Manabe, Hsin-Chih Tai, Vincent Venezia, Duli Mao, Yin Qian
Abstract: A CMOS image sensor having blooming reduction mechanisms is disclosed. The image sensor can include a plurality of pixels arranged in rows and a timing and control circuit in electrical communication with the plurality of pixels. The timing and control circuit includes a readout module configured for outputting a first row of pixels exposed for a first exposure period, outputting a second row of pixels exposed for the first exposure period after outputting the first row of pixels, and thereafter outputting a third row of pixels exposed for a second exposure period different than the first exposure period, the third row of pixels being between the first and second rows of pixels.
Type:
Grant
Filed:
January 22, 2007
Date of Patent:
October 5, 2010
Assignee:
OmniVision Technologies, Inc.
Inventors:
Jizhang Shan, Xinping James He, Henry Yang
Abstract: A driver circuit provides fast settling times, slew rate control, and power efficiency, while reducing the need for large external capacitors. A voltage reference circuit generates a voltage reference signal. A comparator compares the voltage reference signal and a driver output signal and generates an output high voltage control signal. An output driver includes a first and a second switch that are coupled together. The first and second switches are further coupled to generate the driver output signal in response to coupling the output high voltage control signal to the control terminal of the first switch and coupling an input signal to the control terminal of the second switch.
Abstract: An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
Type:
Grant
Filed:
September 4, 2008
Date of Patent:
September 21, 2010
Assignee:
OmniVision Technologies, Inc.
Inventors:
Vincent Venezia, Hsin-Chih Tai, Duli Mao, Sohei Manabe, Howard E. Rhodes, Wei Dong Qian
Abstract: A pixel and image sensor formed in accordance with the present invention has two modes of operation: a normal mode and a low light mode. The present invention switches from a normal to a low light mode based upon the amount of illumination on the image sensor. Once the level of illumination is determined, a decision is made by comparing the level of illumination to a threshold whether to operate in normal mode or low light mode. In low light mode, the reset transistor (for a 3T pixel) or the transfer transistor (for a 4T pixel) is biased positive.
Abstract: An imaging circuit includes a pixel array that is arranged to concurrently reset pixels in a pixel array in response to a global reset signal. The pixels are arranged in rows, such that the rows can be individually selected by a row select line. A reset transistor concurrently resets the pixels by coupling a reset voltage to a floating diffusion of the pixel. A transfer gate transistor selectively couples the floating diffusion to a storage region. A storage gate transistor selectively couples the storage region to a photosensitive region so that the reset transistor, the transfer gate transistor, and the storage gate transistor for each of the pixels can be activated in response to the global reset signal. A double correlated sampler may be used to provide a correlated double sample using a first sampled voltage of a reset voltage and a second sampled voltage of a pixel voltage that is produced when a photodiode region is exposed to incident light.
Abstract: An image sensor has an array of pixels organized into a row and column format. Pixels are read out in a line-by-line sequence and buffered in a line image buffer. An extended dynamic range is supported by varying a column exposure time according to a periodic sequence. As a result, the pixel exposure times vary within each row. A high dynamic range is generated by combining pixel data of adjacent pixels within the same row that are of the same filter type but having different exposure times. Color interpolation is performed on the combined line data.
Abstract: An array of backside illuminated image sensors is fabricated using a number of processes. These processes include fabricating front side components of the backside illuminated image sensors into or onto a first side of an epitaxial layer disposed over a substrate layer. Dopants are diffused from the substrate through a second side of the epitaxial layer to create a dopant gradient band in the epitaxial layer adjacent to the substrate layer. The backside of the array is then thinned to remove the substrate layer while retaining at least a portion of the dopant gradient band in the epitaxial layer.
Abstract: A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P+ doped layers are formed within the semiconductor layer. An imaging pixel having a photodiode is formed within the semiconductor layer, where the photodiode is an N? region formed within the P-type region of the semiconductor layer between the frontside P+ doped layer and the backside P+ doped layer.
Abstract: An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N? region formed within a P-type region. The N? region is formed from an implant of arsenic and an implant of phosphorus. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node. Finally, the pixel includes an amplification transistor controlled by the floating node.
Abstract: An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.
Abstract: An image sensor uses a single row of an array of pixels elements to determine whether a pixel is defective and to recover the defective pixel. The image sensor includes a “maximum of minimum” filter to remove a “black” pixel from a raw image. The image sensor also includes a “minimum of maximum” filter to remove a “white” pixel from the raw image.