Abstract: A reflowable camera module is implemented using a Chip Scale Package (CSP). An image sensor is formed on one portion of the carrier. A light emitting diode (LED) is formed on another portion of the carrier. The LED serves as an integrated camera flash. Additional optical isolation is provided within the camera module to prevent stray light generated by the LED from degrading image quality.

Abstract: A miniature image capture lens is disclosed, comprising a wafer scale lens system, which comprises a first lens group including a first substrate, a first surface disposed on a first side of the first substrate, a second surface disposed on a second side of the first substrate, and a second lens group including a second substrate, a third surface disposed on a first side of the second substrate, and a fourth surface disposed on a second side of the second substrate, wherein the first surface, the second surface, the third surface and the fourth surface are aspherical, one of the first surface and the second surface, and one of the third surface and the fourth surface have a high refraction index Nd_h and a high abbe number Vd_h, another one of the first surface and the second surface, and another one of the third surface and the fourth surface have a low refraction index Nd_l and a low abbe number Vd_l, and the miniature image capture lens meets the following conditions: Nd—h=1.58˜1.62; Nd—l=1.48˜1.

Abstract: An image sensor for capturing a color image comprising a two dimensional array of light-sensitive pixels including panchromatic pixels and color pixels having at least three different color responses, the pixels being arranged in a rectangular minimal repeating unit having at least eight pixels and having at least two rows and two columns, wherein for a first color response, the color pixels having the first color response alternate with panchromatic pixels in at least two directions, and for each of the other color responses there is at least one row, column or diagonal of the repeating pattern that only has color pixels of the given color response and panchromatic pixels.

Abstract: An operational amplifier with two pairs of differential inputs for use with an input switch capacitor network. The operational amplifier has reset devices for resetting the second pair of differential inputs while amplifying the first pair of differential inputs, and for resetting the first pair of differential inputs while amplifying the second pair of differential inputs for reducing memory effect in electronic circuits. In an embodiment, the amplifier has an additional reset device for resetting the outputs during a prophase of amplifying the first pair of differential inputs and a prophase of amplifying the second pair of differential inputs.

Abstract: An integrated circuit includes a clustered memory storage subsystem. The integrated circuit utilizes a baseline design that supports a scalable number of memory clusters. The number of storage devices within an individual memory cluster may also be selected to adjust the memory capacity. A single baseline design of a clustered memory storage subsystem design is customized for a particular integrated circuit with the number of memory clusters and storage devices within memory clusters selected for the memory requirements of a particular application. The design and verification costs to fabricate different versions of the integrated circuit are thus reduced.

Abstract: A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A method of improving a first color filter array image from an image sensor having a plurality of color channels and a panchromatic channel, includes capturing the panchromatic channel at a different exposure time than at least one of the color channels with the image sensor; using the color channels to provide a luminance channel; and analyzing the color filter array image and the luminance channel to determine defective pixels in the color channels and using neighboring color and luminance pixel values to improve the defective pixels to produce a second color filter array image or full-color image having at least one improved channel.

Abstract: An image processing method includes wavefront coding a wavefront that forms an optical image, converting the optical image to a data stream and processing the data stream with a color-specific filter kernel to reverse effects of wavefront coding and generate a final image. Another image processing method includes wavefront coding a wavefront that forms an optical image, converting the optical image to a data stream and colorspace converting the data stream. The method separates spatial information and color information of the colorspace converted data stream into one or more separate channels and deblurs one or both of the spatial information and the color information. The method recombines the channels to recombine deblurred spatial information with deblurred color information, and colorspace converts the recombined deblurred spatial and color information to generate an output image.

Abstract: A biometric optical recognition system includes optics, including a wavefront coding mask, for imaging a wavefront of object to be recognized to an intermediate image, and a detector for detecting the intermediate image. A modulation transfer function detected by the detector contains no zeros such that subsequent task based image processing recognizes the object. A biometric recognition system includes optics for imaging a wavefront of an object to be recognized to a first intermediate image, and a detector for detecting the first intermediate image. The optics include a phase changing element configured for modifying the wavefront such that a modulation transfer function characterizing detection of the first intermediate image contains no zeros such that subsequent task based image processing recognizes the object.

Abstract: An image sensor includes a pixel array having photoactive pixels and dark reference pixels. The photoactive pixels can be configured in a sub-array within the pixel array. Well contacts are only placed along opposing sides or edges of the sub-array of photoactive pixels or along opposing sides or edges of the pixel array.

Abstract: Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

Abstract: A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.

Abstract: An image sensor having a plurality of micro-lenses disposed on a semiconductor substrate. A first micro-lens has a different focal length, height, shape, curvature, thickness, etc., than a second micro-lens. The image sensor may be back side illuminated or front side illuminated.

Abstract: An image sensor includes a photodiode to accumulate an image charge and a storage transistor to store the image charge. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge to a readout node and a reset transistor is coupled to the readout node. A controller is configured to apply a negative voltage to a gate of the storage transistor before activating the gate of the storage transistor to store the image charge.

Abstract: An image sensor includes a color filter array, sense amplifiers, multiplexing circuitry, and an output. The color filter array acquires image data using an array of M columns and N rows of pixels. The sense amplifiers are coupled to the color filter array for reading out image data from the color filter array. The multiplexing circuitry couples the sense amplifiers to the color filter array, wherein each sense amplifier is time shared across multiple columns and multiple rows. The output is coupled to receive the image data from the sense amplifiers and output the image data off-chip.

Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.

Abstract: A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: A microshutter array has a frame having a light transmissive portion. Linear microshutter elements extend across the light transmissive portion and in parallel to each other. Each microshutter element has a flat blade extended in a length direction and first and second torsion arms extending outwards from each side of the blade in the length direction, the blade extending across the light transmissive portion. There is at least one electrode associated with each linear microshutter element and extended in the length direction parallel to the microshutter element.

Abstract: An integrated circuit includes a substrate; a sealing element spanning a periphery of the substrate that forms a protective boundary for the substrate; a plurality of copper lines spanning the substrate in at least two distinct layers contained within the protective boundary; a first conducting element disposed outside the sealing element; and one or more second conducting elements connecting at least two of the copper lines and that spans the sealing element; wherein the conducting elements are substantially non-oxidizing metals that are resistant to oxidization and that connect the copper line to the first conducting element.

Abstract: A method of modifying a CFA image or full-color image having a plurality of color channels and a panchromatic channel, includes capturing the panchromatic channel at a different exposure time than at least one of the color image channels with the CFA sensor within one image; producing a panchromatic edge map and a color edge map from the CFA image; using the panchromatic edge map and the color edge map to provide motion estimates; and using the motion estimates to modify at least one of the channels of the CFA image or full-color image.