Patents Assigned to OMNIVISION
  • Publication number: 20130321603
    Abstract: A method of one aspect may include receiving an encapsulated image acquisition device having an internal memory. The internal memory may store images acquired by the encapsulated image acquisition device. The images may be transferred from the internal memory to an external memory that is external to the encapsulated image acquisition device. An image analysis station may be selected from among a plurality of image analysis stations to analyze the images. The images may be analyzed with the selected image analysis station. Other methods, systems, and kits are also disclosed.
    Type: Application
    Filed: August 7, 2013
    Publication date: December 5, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC
    Inventors: Gregory E. Johnson, Edward R. Dowski, JR.
  • Publication number: 20130308057
    Abstract: Techniques and mechanisms for circuitry to provide video data for loading to a buffer. In an embodiment, a loader circuit receives video data and determines MX data for a video frame and NZ data for the video frame, wherein M and N are different respective dimensions of a color space, and wherein X is a first encoding type and Z is a second encoding type. The first MX data includes data representing a first portion of a color component value, and the first NZ data includes data representing a second portion of that color component value. In another embodiment, the loader circuit sends the MX data via a first channel while sending the NZ data via a second channel to a random access buffer.
    Type: Application
    Filed: May 15, 2012
    Publication date: November 21, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Manuel Lu, Sunny Ng
  • Publication number: 20130307093
    Abstract: A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.
    Type: Application
    Filed: July 24, 2013
    Publication date: November 21, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC
    Inventor: Manoj Bikumandla
  • Publication number: 20130292751
    Abstract: An apparatus includes a semiconductor layer having an array of pixels arranged therein. A passivation layer is disposed proximate to the semiconductor layer over the array of pixels. A segmented etch stop layer including a plurality of etch stop layer segments is disposed proximate to the passivation layer over the array of pixels. Boundaries between each one of the plurality of etch stop layer segments are aligned with boundaries between pixels in the array of pixels.
    Type: Application
    Filed: May 2, 2012
    Publication date: November 7, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Gang Chen, Duli Mao, Hsin-Chih Tai
  • Publication number: 20130286285
    Abstract: Techniques and mechanisms for exchanging sets of video data each via multiple channels. In an embodiment, a first data set is distributed across the multiple channels according to a first mapping of the multiple channels each to a different respective one of multiple data types, where each of the multiple data types corresponds to a different respective dimension of a color space. In another embodiment, a second data set is distributed across the multiple channels according to a second mapping of the multiple channels each to a different respective one of the multiple data types, where the second mapping is different from the first mapping.
    Type: Application
    Filed: April 25, 2012
    Publication date: October 31, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Manuel Lu, Xuanming Du
  • Publication number: 20130264688
    Abstract: An integrated circuit system includes a first device wafer that has a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer that has a second semiconductor layer proximate to a second metal layer including a second conductor disposed within a second metal layer oxide is also included. A frontside of the first metal layer oxide is bonded to a frontside of the second metal layer oxide at an oxide bonding interface between the first metal layer oxide and the second metal layer oxide. A conductive path couples the first conductor to the second conductor with conductive material formed in a cavity etched between the first conductor and the second conductor and etched through the oxide bonding interface and through the second semiconductor layer from a backside of the second device wafer.
    Type: Application
    Filed: April 6, 2012
    Publication date: October 10, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Yin Qian, Hsin-Chih Tai, Duli Mao, Tiejun Dai, Howard E. Rhodes, Hongli Yang
  • Publication number: 20130264465
    Abstract: An example image sensor system includes an image sensor having a first terminal and a host controller coupled to the first terminal. Logic is included in the image sensor system, that when executed transfers analog image data from the image sensor to the host controller through the first terminal of the image sensor and also transfers one or more digital control signals between the image sensor and the host controller through the same first terminal.
    Type: Application
    Filed: April 5, 2012
    Publication date: October 10, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Tiejun Dai, Junzhao Lei
  • Publication number: 20130264467
    Abstract: An example double-sided image sensor includes a semiconductor die, a photodetector, a charge-to-voltage converter, and support circuitry. The semiconductor die has a first side and a second side that is opposite the first side. The photodetector is disposed within the semiconductor die on the first side for accumulating an image charge in response to light incident on the first side. The charge-to-voltage converter is disposed within the semiconductor die on the first side. The transfer gate is also disposed on the first side of the semiconductor die between the photodetector and the charge-to-voltage converter to transfer the image charge from the photodetector to the charge-to-voltage converter. Support circuitry of the image sensor is disposed within the semiconductor die on the second side and is electrically coupled to the charge-to-voltage converter.
    Type: Application
    Filed: April 9, 2012
    Publication date: October 10, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Xiao Ying Hong, Dominic Massetti
  • Publication number: 20130265472
    Abstract: Circuitry to reduce signal noise characteristics in an image sensor. In an embodiment, a bit trace line segment is located between neighboring respective segments of a source follower power trace and an additional trace which is to remain at a first voltage level during a pixel cell readout time period. In another embodiment, for each such trace segment, a smallest separation between the trace segment and the respective neighboring other one of such trace segments is substantially equal to or less than some maximum length to provide for parasitic capacitance between the bit line trace and one or more other traces.
    Type: Application
    Filed: April 6, 2012
    Publication date: October 10, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Sohei Manabe, Jeong-Ho Lyu
  • Publication number: 20130264466
    Abstract: An example image sensor system includes an image sensor having a first terminal and a host controller coupled to the first terminal. Logic is included in the image sensor system, that when executed transfers clock signals from the host controller to the image sensor through the first terminal of the image sensor and also transfers one or more digital control signals between the image sensor and the host controller through the same first terminal.
    Type: Application
    Filed: April 5, 2012
    Publication date: October 10, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Tiejun Dai, Junzhao Lei
  • Publication number: 20130258144
    Abstract: Embodiments of the invention describe a system, apparatus and method for obtaining black reference pixels for dark current correction processing are described herein. Embodiments of the invention capture image signal data via a plurality of pixel cells of a pixel unit of an image device, wherein capturing image signal data involves establishing a first state of exposing incident light on each pixel of the pixel unit and a second state of shielding incident light from one or more pixels of the pixel unit via a shutter unit disposed over the pixel unit. Image signal data from each pixel of the pixel unit captured during the first state and the second state is read, and scene image data is created by combining a subset of image signal data captured during the first state with a dark current component including a subset of image signal data captured during the second state.
    Type: Application
    Filed: March 28, 2012
    Publication date: October 3, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Gang Chen, Duli Mao, Hsin-Chih Tai, Howard E. Rhodes
  • Publication number: 20130256510
    Abstract: Embodiments of the invention describe utilizing dual floating diffusion switches to enhance the dynamic range of pixels having multiple photosensitive elements. The insertion of dual floating diffusion switches between floating diffusion nodes of said photosensitive elements allows the conversion gain to be controlled and selected for each photosensitive element of a pixel. Furthermore, in embodiments utilizing a photosensitive element for high conversion gains, the value of high conversion gain for the respective photosensitive element maybe increased due to the separation between floating diffusion nodes, enabling high sensitivity for low-light conditions.
    Type: Application
    Filed: March 29, 2012
    Publication date: October 3, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Jeong-Ho Lyu
  • Publication number: 20130256822
    Abstract: Techniques for providing a pixel cell which exhibits improved doping in a semiconductor substrate. In an embodiment, a first doping is performed through a backside of the semiconductor substrate. After the first doping, the semiconductor substrate is thinned to expose a front side which is opposite of the backside. In another embodiment, a second doping is performed through the exposed front side of the thinned semiconductor substrate to form at least part of a pixel cell structure.
    Type: Application
    Filed: March 28, 2012
    Publication date: October 3, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Gang Chen, Duli Mao, Hsin-Chih Tai, Howard Rhodes
  • Publication number: 20130258181
    Abstract: An apparatus includes an image sensor module with a lens stack disposed on the image sensor module. A protective tube is disposed on the image sensor module and encloses the lens stack. The protective tube includes an outer wall having a snap-in latch element disposed thereon. A metal housing encloses the protective tube. The metal housing includes a housing foot and inner wall having an opposite snap-in latch element disposed thereon. The image sensor module is adapted to be secured between the housing foot of the metal housing and the protective tube when the opposite snap-in latch element of the metal housing is engaged with the snap-in latch element of the protective tube.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 3, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Kevin Ka Kei Leung, Wen Hua Lin
  • Publication number: 20130256509
    Abstract: Techniques for providing a pixel cell which includes two source follower transistors. In an embodiment, a first source follower transistor of a pixel cell and a second source follower transistor of the pixel cell are coupled in parallel with one another, where the source follower transistors are each coupled via their respective gates to a floating diffusion node of the pixel cell. In another embodiment, the first source follower transistor and second source follower transistor each operate based on a voltage of the floating diffusion node to provide a respective component of an amplification signal, where the pixel cell outputs an analog signal based on the amplification signal.
    Type: Application
    Filed: March 27, 2012
    Publication date: October 3, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Cunyu Yang, Howard E. Rhodes
  • Publication number: 20130258182
    Abstract: An apparatus includes an image sensor module with a lens stack disposed on the image sensor module. A protective tube is disposed on the image sensor module and encloses the lens stack. A metal housing encloses the protective tube. The metal housing includes a housing foot adapted to secure the image sensor module between the housing foot of the metal housing and the protective tube.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 3, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Wei-Feng Lin, Wen-Jen Ho
  • Publication number: 20130237280
    Abstract: An image sensor includes a pixel array having a plurality of pixels. A readout circuit is coupled to the pixel array. A controller circuit is coupled to control the pixel array and is coupled to the readout circuit to receive array data from the pixel array. The controller circuit includes a mode control logic unit providing logic which when executed causes the image sensor operate in an idle mode of operation and then sample in response to receiving an event signal array data received from the pixel array in a pulsed mode of operation. A pattern in the array data samples over time is recognized and a mode of operation is selected in response to the recognized pattern.
    Type: Application
    Filed: March 6, 2012
    Publication date: September 12, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Guannho George Tsau, Anson Hoi-Fung Chan
  • Publication number: 20130234029
    Abstract: An apparatus includes a first photodetector array including visible light photodetectors disposed in semiconductor material to detect visible light included in light incident upon the semiconductor material. The apparatus also includes a second photodetector array including time of flight (“TOF”) photodetectors disposed in the semiconductor material to capture TOF data from reflected light reflected from an object included in the light incident upon the semiconductor material. The reflected light reflected from the object is directed to the TOF photodetectors along an optical path through the visible light photodetectors and through a thickness of the semiconductor material. The visible light photodetectors of the first photodetector array are disposed in the semiconductor material along the optical path between the object and the TOF photodetectors of the second photodetector array.
    Type: Application
    Filed: March 6, 2012
    Publication date: September 12, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Manoj Bikumandla
  • Publication number: 20130228691
    Abstract: An apparatus includes a photodiode, a first and second storage transistor, a first and second transfer transistor, and a first and second output transistor. The first transfer transistor selectively transfers a first portion of the image charge from the photodiode to the first storage transistor for storing over multiple accumulation periods. The first output transistor selectively transfers a first sum of the first portion of the image charge to a readout node. The second transfer transistor selectively transfers a second portion of the image charge from the photodiode to the second storage transistor for storing over the multiple accumulation periods. The second output transistor selectively transfers a second sum of the second portion of the image charge to the readout node.
    Type: Application
    Filed: March 1, 2012
    Publication date: September 5, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Ashish A. Shah
  • Publication number: 20130221194
    Abstract: A backside illuminated pixel array having a buried channel source follower of a pixel cell which is coupled to output an analog signal directly to a bitline as image data. In one embodiment, the buried channel source follower of a pixel cell is coupled to a source follower power line having a line impedance which is less than that of one or more other signal lines for operating that same pixel cell. In another embodiment, a source follower power line has a line impedance which is less than at least one of a line impedance of a transfer signal line or a line impedance of a reset signal line.
    Type: Application
    Filed: February 27, 2012
    Publication date: August 29, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Sohei Manabe