Abstract: A method of pre-processing a defocused image of an object includes applying an object-based sharpening filter on the defocused image to produce a sharper image; and quantizing the sharper image using block-wise quantization. A system for generating decoded text data from alphanumeric information printed upon an object includes a camera that obtains image data of the alphanumeric information. The system also includes a pre-processor that (a) performs block-wise quantization of the image data to form conditioned image data, and (b) performs optical character recognition on the conditioned image data to generate the decoded text data.

Abstract: An image sensor includes a device wafer including a pixel array for capturing image data bonded to a carrier wafer. Signal lines are disposed adjacent to a side of the carrier wafer opposite the device wafer and a metal noise shielding layer is disposed beneath the pixel array within at least one of the device wafer or the carrier wafer to shield the pixel array from noise emanating from the signal lines. A through-silicon-via (“TSV”) extends through the carrier wafer and the metal noise shielding layer and extends into the device wafer to couple to circuitry within the device wafer. Further noising shielding may be provided by highly doping the carrier wafer and/or overlaying the bottom side of the carrier wafer with a low-K dielectric material.

Abstract: An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node.

Abstract: A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract: An apparatus and technique for fabricating an image sensor including the dark sidewall films disposed between adjacent color filters. The image sensor further includes an array of photosensitive elements disposed in a substrate layer, a color filter array (“CFA”) including CFA elements having at least two different colors disposed on a light incident side of the substrate layer, and an array of microlenses disposed over the CFA. Each microlens is aligned to direct light incident on the light incident side of the image sensor through a corresponding CFA element to a corresponding photosensitive element. The dark sidewall films are disposed on sides of the CFA elements and separate adjacent ones of the CFA elements having different colors.

Abstract: A color image sensor is disclosed. The color image sensor includes a pixel array including a color filter array (“CFA”) overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first color filter elements contribute to a first color channel of the color image and the second color filter elements contribute to a second color channel of the color image. The color image sensor further includes a color combiner unit coupled to combine the first color channel with the second color channel to generate a third color channel of the color image based on the first and second color channels. An output port is coupled to the pixel array to output the color image having three color channels including the first, second, and third color channels.

Abstract: A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

Abstract: Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed.

Abstract: Systems and methods for processing a detected composite color image to form a processed composite color image includes the following, for each of a plurality of pixels in the image: (1) identifying a window of pixels in the image that surrounds the pixel, (2) calculating a weight factor coefficient for each detected color from detected color intensity values of the pixels that surround the pixel, (3) calculating raw color contributions corresponding to each nonselected color, (4) multiplying each of the detected color values of a selected color and the raw color contributions corresponding to the nonselected colors, with corresponding weight factor coefficients, to form weighted color contributions, and (5) summing the weighted color contributions to form a processed color intensity value for the pixel.

Abstract: An example reinforcement structure for protecting a wafer-level camera module includes a top sheet element and a side sheet element. The top sheet element is to be disposed over a top surface of the camera module and includes a first opening for allowing light to pass through to the camera module. The side sheet element is coupled to the top sheet element for securing the reinforcement structure to a printed circuit board (PCB). A second opening in the side sheet element is included to allow an adhesive to be dispensed through the second opening to adhere the reinforcement structure to the camera module.

Abstract: A method for using a capture device to capture at least two video signals corresponding to a scene, includes: providing a two-dimensional image sensor having a plurality of pixels; reading a first group of pixels from the image sensor at a first frame rate to produce a first video signal of the image scene; reading a second group of pixels from the image sensor at a second frame rate for producing a second video signal; and using at least one of the video signals for adjusting one or more of the capture device parameters.

Abstract: Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.

Abstract: A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color filter array formed on a backside surface of the sensor layer. The epitaxial layer comprises polysilicon color filter array alignment marks formed in locations corresponding to respective color filter array alignment mark openings in the frontside surface of the sensor layer. The color filter array is aligned to the color filter array alignment marks of the epitaxial layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Abstract: An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.

Abstract: An image sensor in accordance with embodiments disclosed herein includes an array of imaging pixels, an insulator layer, and a plurality of metal reflectors. The array of imaging pixels are disposed within a semiconductor layer, where each imaging pixel in the array of imaging pixels includes a photosensitive element configured to receive light from a backside of the image sensor. The insulator layer is disposed on a frontside of the semiconductor layer and the plurality of metal reflectors are disposed within the insulator layer to reflect the light to a respective photosensitive element. A width of each of the plurality of metal reflectors is equal to a width of a metal reflector at the center of the array multiplied by a scaling factor, where the scaling factor is dependent on a distance of the metal reflector from the center of the array.

Abstract: A technique for fabricating an image sensor including a pixel circuitry region and a peripheral circuitry region includes fabricating front side components on a front side of the image sensor. A dopant layer is implanted on a backside of the image sensor. A anti-reflection layer is formed on the backside and covers a first portion of the dopant layer under the pixel circuitry region while exposing a second portion of the dopant layer under the peripheral circuitry region. The first portion of the dopant layer is laser annealed from the backside of the image sensor through the anti-reflection layer. The anti-reflection layer increases a temperature of the first portion of the dopant layer during the laser annealing.

Abstract: An imaging sensor having reduced column fixed pattern noise includes a plurality of imaging pixels and a column sampling circuit. The plurality of imaging pixels are arranged in a column the column sampling circuit is coupled to the column. A plurality of sampling channels are included in the column sampling circuit, where the column sampling circuit randomly selects a first sampling channel from among the plurality of sampling channels to sample a first data signal from a pixel included in the plurality of imaging pixels and where the column sampling circuit randomly selects a second sampling channel from among the plurality of sampling channels to sample a second data signal from the pixel.

Abstract: An imaging system includes an imaging array and readout circuitry. The imaging array includes image sensor pixels for capturing image data and one or more non-volatile memory (NVM) pixels for storing NVM data. The readout circuitry is coupled to the imaging array to readout the image data and the non-volatile memory data.

Abstract: A color pixel array includes a plurality of micropixels. Each micropixel includes a photosensitive element and a color filter optically aligned with the photosensitive element to filter incident light prior to reaching the photosensitive element. The micropixels are organized into a repeating pattern of triangular macropixels each having a triangular shape within the color pixel array.

Abstract: Embodiments of a process for forming a photodetector region in a CMOS pixel by dopant implantation, the process comprising masking a photodetector area of a surface of a substrate for formation of the photodetector region, positioning the substrate at a plurality of twist angles, and at each of the plurality of twist angles, directing dopants at the photodetector area at a selected tilt angle. Embodiments of a CMOS pixel comprising a photodetector region formed in a substrate, the photodetector region comprising overlapping first and second dopant implants, wherein the overlap region has a different dopant concentration than the non-overlapping parts of the first and second implants, a floating diffusion formed in the substrate, and a transfer gate formed on the substrate between the photodetector and the transfer gate. Other embodiments are disclosed and claimed.