Patents Assigned to OMNIVISION
  • Publication number: 20100289911
    Abstract: A pixel and image sensor formed in accordance with the present invention has two modes of operation: a normal mode and a low light mode. The present invention switches from a normal to a low light mode based upon the amount of illumination on the image sensor. Once the level of illumination is determined, a decision is made by comparing the level of illumination to a threshold whether to operate in normal mode or low light mode. In low light mode, the reset transistor (for a 3T pixel) or the transfer transistor (for a 4T pixel) is biased positive.
    Type: Application
    Filed: July 26, 2010
    Publication date: November 18, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Howard E. Rhodes
  • Publication number: 20100276574
    Abstract: An image sensor includes a photodiode to accumulate an image charge and a storage transistor to store the image charge. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge to a readout node and a reset transistor is coupled to the readout node. A controller is configured to apply a negative voltage to a gate of the storage transistor before activating the gate of the storage transistor to store the image charge.
    Type: Application
    Filed: April 30, 2009
    Publication date: November 4, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Sohei Manabe
  • Publication number: 20100271524
    Abstract: An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.
    Type: Application
    Filed: April 24, 2009
    Publication date: October 28, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Vincent Venezia, Ashish Shah, Rongsheng Yang, Duli Mao, Yin Qian, Hsin-Chih Tai, Howard E. Rhodes
  • Publication number: 20100176276
    Abstract: A pinned photodiode structure with peninsula-shaped transfer gate which decrease the occurrence of a potential barrier between the photodiode and the floating drain, prevents loss of full well capacity (FWC) and decreases occurrences of image lag.
    Type: Application
    Filed: December 17, 2009
    Publication date: July 15, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Hisanori Ihara
  • Publication number: 20100164042
    Abstract: Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.
    Type: Application
    Filed: December 31, 2008
    Publication date: July 1, 2010
    Applicant: OMNIVISION TECHNOLOGIES INC.
    Inventor: Sohei Manabe
  • Publication number: 20100149403
    Abstract: An image sensor system includes an image sensor that can be exposed with light from an illuminated scene to produce a secondary image, a meter sensor that can be exposed with light from the illuminated scene to produce a meter secondary image, and an image processor. The image processor can be configured to determine an average pixel color in the secondary image. The image processor can also be configured to determine a white balancing point in response to the secondary image average pixel color, the meter secondary image, meter calibration information for the meter sensor, and the image calibration information for the image sensor.
    Type: Application
    Filed: December 11, 2008
    Publication date: June 17, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Xiaoyong Wang, Jizhang Shan, Donghui Wu
  • Publication number: 20100140675
    Abstract: An apparatus and method for fabricating an array of backside illuminated (“BSI”) image sensors is disclosed. Front side components of the BSI image sensors are formed into a front side of the array. A dopant layer is implanted into a backside of the array. The dopant layer establishes a dopant gradient to encourage photo-generated charge carriers to migrate towards the front side of the array. At least a portion of the dopant layer is annealed. A surface treatment is formed on the backside of the dopant layer to cure surface defects.
    Type: Application
    Filed: December 8, 2008
    Publication date: June 10, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Howard E. Rhodes
  • Publication number: 20100123174
    Abstract: Embodiments of the present invention are directed to an image sensor having pixel transistors and peripheral transistors disposed in a silicon substrate. For some embodiments, a protective coating is disposed on the peripheral transistors and doped silicon is epitaxially grown on the substrate to form lightly-doped drain (LDD) areas for the pixel transistors. The protective oxide may be used to prevent epitaxial growth of silicon on the peripheral transistors during formation of the LDD areas of the pixel transistors.
    Type: Application
    Filed: November 19, 2008
    Publication date: May 20, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Duli Mao, Hsin-Chih Tai, Howard E. Rhodes, Vincent Venezia, Yin Qian
  • Publication number: 20100123069
    Abstract: A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region.
    Type: Application
    Filed: November 17, 2008
    Publication date: May 20, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Duli Mao, Vincent Venezia, Hsin-Chih Tai, Yin Qian, Howard E. Rhodes
  • Publication number: 20100109060
    Abstract: An array of pixels is formed using a substrate. Each pixel can be formed on the substrate, which has a backside and a frontside that includes metalization layers. A photodiode is formed in the substrate and frontside P-wells are formed using frontside processing that are adjacent to the photosensitive region. A first N-type region is formed in the substrate below the photodiode. A second N-type region is formed in a region of the substrate below the first N-type region and is formed using backside processing.
    Type: Application
    Filed: November 6, 2008
    Publication date: May 6, 2010
    Applicant: OMNIVISION TECHNOLOGIES INC.
    Inventors: Duli Mao, Vincent Venezia, Hsin-Chih Tai, Yin Qian, Howard E. Rhodes
  • Publication number: 20100084692
    Abstract: A color pixel array includes first, second, and third pluralities of color pixels each including a photosensitive region disposed within a first semiconductor layer. In one embodiment, a second semiconductor layer including deep dopant regions is disposed below the first semiconductor layer. The deep dopant regions each reside below a corresponding one of the first plurality of color pixels but substantially not below the second and third pluralities of color pixels. In one embodiment, buried wells are disposed beneath the second and third pluralities of color pixels but substantially not below the first plurality of color pixels.
    Type: Application
    Filed: October 8, 2008
    Publication date: April 8, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Duli Mao, Vincent Venezia, Hsin-Chih Tai, Yin Qian, Howard E. Rhodes
  • Publication number: 20100051785
    Abstract: An image sensor includes a first imaging pixel for a first color having a photosensitive region disposed within a substrate of the image sensor and a second imaging pixel for a second color that is different from the first color having a photosensitive region disposed within the substrate. A refraction element disposed adjacent to the substrate, so that the refraction element refracts light of the first color to the photosensitive region of the first imaging pixel and refracts light of the second color to the photosensitive region of the second imaging pixel.
    Type: Application
    Filed: August 26, 2008
    Publication date: March 4, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Tiejun Dai, Ching Hu
  • Publication number: 20100042956
    Abstract: An integrated circuit includes a clustered memory storage subsystem. The integrated circuit utilizes a baseline design that supports a scalable number of memory clusters. The number of storage devices within an individual memory cluster may also be selected to adjust the memory capacity. A single baseline design of a clustered memory storage subsystem design is customized for a particular integrated circuit with the number of memory clusters and storage devices within memory clusters selected for the memory requirements of a particular application. The design and verification costs to fabricate different versions of the integrated circuit are thus reduced.
    Type: Application
    Filed: August 14, 2008
    Publication date: February 18, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Hsueh Ban Lan
  • Publication number: 20100038523
    Abstract: An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.
    Type: Application
    Filed: September 14, 2009
    Publication date: February 18, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Vincent Venezia, Hsin-Chih Tai, Duli Mao, Ashish Shah, Howard E. Rhodes
  • Publication number: 20100013039
    Abstract: The disclosure describes embodiments of a process comprising forming a pixel on a frontside of a substrate, the substrate having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside. The thickness of the substrate is reduced by removing material from the backside of the substrate to allow for backside illumination of the pixel, and the backside of the substrate is treated with a hydrogen plasma to passivate the backside. The disclosure also describes embodiments of an apparatus comprising a semiconductor wafer having a frontside, a backside, and a thickness substantially equal to a distance between the frontside and the backside, and a pixel formed on the frontside, wherein the thickness of the wafer is selected and adjusted to allow for illumination of the pixel through the backside of the wafer, and wherein the backside is treated with a hydrogen plasma to passivate the backside.
    Type: Application
    Filed: July 21, 2008
    Publication date: January 21, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Yin Qian, Hsin-Chih Tai, Vincent Venezia, Duli Mao, Howard E. Rhodes
  • Publication number: 20090316030
    Abstract: An image sensor includes a color filter array, sense amplifiers, multiplexing circuitry, and an output. The color filter array acquires image data using an array of M columns and N rows of pixels. The sense amplifiers are coupled to the color filter array for reading out image data from the color filter array. The multiplexing circuitry couples the sense amplifiers to the color filter array, wherein each sense amplifier is time shared across multiple columns and multiple rows. The output is coupled to receive the image data from the sense amplifiers and output the image data off-chip.
    Type: Application
    Filed: June 18, 2008
    Publication date: December 24, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Tiejun Dai
  • Publication number: 20090309995
    Abstract: The specification disclosed embodiments of an apparatus comprising an automatic white balance (AWB) circuit coupled to a pixel array to transform red, green, and blue color data obtained from each pixel into x and y chromaticity values for each pixel, determine a distance between the Planckian locus and the x and y chromaticity values for each pixel, determine a weight for each pixel based on the distance between its x and y chromaticity values and the Planckian locus, determine red, green, and blue adjustments for each pixel using its weight, and apply a white balance adjustment to the red, green and blue values obtained from each pixel. Other embodiments are also disclosed and claimed.
    Type: Application
    Filed: June 11, 2008
    Publication date: December 17, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Weihua Xiong, Jiangtao Kuang
  • Publication number: 20090302411
    Abstract: A backside illuminated image sensor has a carbon nanotube transparent conductive coating formed on the backside of the image sensor. In one implementation the carbon nanotube transparent conductive coating acts as a wavelength selective filter to filter out infrared light. In one implementation the carbon nanotube transparent conductive coating has an optical transparency between 50% and 80% for blue and green color bands.
    Type: Application
    Filed: June 5, 2008
    Publication date: December 10, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Dominic Massetti
  • Publication number: 20090302358
    Abstract: An image sensor with a high full-well capacity includes a photosensitive region, a transfer gate, and sidewall spacers. The photosensitive region is formed to accumulate an image charge in response to light. The transfer gate disposed adjacent to the photosensitive region and coupled to selectively transfer the image charge from the photosensitive region to other pixel circuitry. First and second sidewall spacers are disposed on either side of the transfer gate. The first sidewall spacer closest to the photosensitive region is narrower than the second sidewall spacer. In some cases, the first sidewall spacer may be omitted.
    Type: Application
    Filed: June 4, 2008
    Publication date: December 10, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Duli Mao, Hsin-Chih Tai, Vincent Venezia, Yin Qian, Howard E. Rhodes
  • Publication number: 20090296810
    Abstract: A computer readable storage medium has executable instructions to select a plurality of macroblocks in a video sequence to be coded as anchor macroblocks, the anchor macroblocks distributed across the video sequence and facilitating random access decoding of a portion of the video sequence. The video sequence is coded into a bit stream. Auxiliary information associated with the anchor macroblocks is generated. The auxiliary information associated with the anchor macroblocks is inserted in a supplementary section of the bit stream.
    Type: Application
    Filed: June 3, 2008
    Publication date: December 3, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Hao-Song KONG, Jian ZHOU, Jizhang SHAN