Abstract: An image sensor includes a semiconductor layer that low-pass filters light of different wavelengths. For example, the semiconductor layer proportionately absorbs photons of shorter wavelengths and proportionately passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed on a front surface of the semiconductor layer, where the photodiode is an N? region formed within the P-type region of the semiconductor layer. A P+ layer is formed between the N? region of the photodiode and a back surface of the semiconductor layer. A mirror that primarily reflects photons of red and/or infra-red wavelengths is formed on the back surface of the semiconductor layer.

Abstract: An image sensor includes filters formed over a portion of an array of photosensitive elements in a predetermined pattern. The pattern can be such that the exposure of a matrix (such as a 2-by-2 square of pixels) to light (such as blue light) is improved, while maintaining acceptable capability to capture light across the entire spectrum. The pattern can be such that two blue filters, one red, and one green filter is used by a 2-by-2 square matrix of pixels. The pattern can also include cyan, yellow, and magenta (CYM) filters.

Abstract: A computer readable storage medium has executable instructions to select a plurality of blocks in a video sequence to be coded as intra-coded blocks. Aggregate intra prediction costs are computed for each intra-coded block relative to a corresponding previous intra-coded block. An intra prediction mode is selected for each intra-coded block based on the aggregate intra prediction costs.

Abstract: A computer readable storage medium has executable instructions to select a plurality of blocks in a video sequence to be coded as intra-coded blocks. Intra prediction modes are selected for all intra-coded blocks in a macroblock based on original pixels of neighboring blocks. The mode selection of all intra-coded blocks can be conducted in parallel. The intra-coded blocks in the macroblock are predicted with the selected intra prediction modes based on reconstructed pixels of neighboring blocks.

Abstract: An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.

Abstract: The disclosure describes embodiments of an apparatus comprising an image sensor including a pixel array having a plurality of pixels and an automatic white balance (AWB) circuit coupled to the pixel array. The AWB circuit is used to determine a local white balance component for each pixel, determine a global white balance component for each pixel, and apply a white balance adjustment to each pixel, the applied white balance adjustment comprising a combination of the local white balance component and the global white balance component.

Abstract: Embodiments of the present invention synthesize a core frequency divider by adding a switching feedback shell and using multiple clock edges to trigger the frequency divider. Feedback logic is used to determine which edge will be used. Embodiments allow multiple recursive use, which boosts the overall speed resulting frequency divider circuit 2N times faster than the core frequency divider.

Abstract: A light sensor cell includes a photosensitive element, a floating diffusion region, and a gate oxide disposed between the photosensitive element and the floating diffusion region. The gate oxide has a non-uniform thickness, with a greater thickness near the photosensitive element and a lesser thickness near the floating diffusion region. A transfer gate is disposed on the gate oxide. The transfer gate has a non-uniform threshold voltage, with a greater threshold voltage near the photosensitive element and a lesser threshold voltage near the floating diffusion region.

Abstract: An image sensor pixel includes a photo-sensor region, a microlens, a first color filter layer, and a second color filter layer. The photo-sensor region is disposed within a semiconductor die. The microlens is disposed on the semiconductor die in optical alignment with the photo-sensor region. The first color filter layer is disposed between the photo-sensor region and the microlens. The second color filter layer is disposed on an opposite side of the microlens as the first color filter layer.

Abstract: An image sensor apparatus is disclosed. The image sensor apparatus includes an image sensor for generating image data in a pixel array corresponding to an optical image. A processor alters the image data to embed a feature-dependent code associated with a feature of the image data in a feature-dependent location in the pixel array and generate a digital image from the altered image data.

Abstract: A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

Abstract: A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region.

Abstract: What is disclosed is an apparatus comprising a transfer gate formed on a substrate and a photodiode formed in the substrate next to the transfer gate. The photodiode comprises a shallow N-type collector formed in the substrate, a deep N-type collector formed in the substrate, wherein a lateral side of the deep N-type collector extends at least under the transfer gate, and a connecting N-type collector formed in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. Also disclosed is a process comprising forming a deep N-type collector in the substrate, forming a shallow N-type collector formed in the substrate, and forming a connecting N-type collector in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector.

Abstract: An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate.

Abstract: A backside illuminated imaging sensor pixel includes a photodiode region, a pixel circuitry region, and a storage capacitor. The photodiode region is disposed within a semiconductor die for accumulating an image charge. The pixel circuitry region is disposed on the semiconductor die between a frontside of the semiconductor die and the photodiode region. The pixel circuitry region overlaps at least a portion of the photodiode region. The storage capacitor is included within the pixel circuitry region overlapping the photodiode region and is selectively coupled to the photodiode region to temporarily store image charges accumulated thereon.

Abstract: A technique for fabricating an array of imaging pixels includes fabricating front side components on a front side of the array. After fabricating the front side components, a dopant layer is implanted on a backside of the array. A mask is formed over the dopant layer to selectively expose portions of the dopant layer. Next, the exposed portions of the dopant layer are laser annealed. Alternatively, the mask may be disposed over the backside prior to the formation of the dopant layer and the dopants implanted through the exposed portions and subsequently laser annealed.

Abstract: A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.

Abstract: A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.

Abstract: An image sensor includes near-infrared cut filters formed over an array of photosensitive elements in a predetermined pattern. The near-infrared cut filters may be formed over one half of a photosensitive element in a split pixel arrangement, over one half the photosensitive elements in the array, over every other photosensitive element in the array, and/or in a checkerboard pattern.

Abstract: An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region.