Abstract: A semiconductor chip and a method for producing a semiconductor chip are disclosed. In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface, which is formed by a planar region having a plurality of three-dimensional surface structures on the planar region, a nucleation layer composed of oxygen-containing AlN directly disposed on the growth surface and a nitride-based semiconductor layer sequence disposed on the nucleation layer, wherein the semiconductor layer sequence is selectively grown from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.

Abstract: An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.

Abstract: A method for producing a component and an optoelectronic component are disclosed. In an embodiment a method for producing a component includes providing an auxiliary carrier having a base body and a grid, providing a semiconductor body having an active zone for generating electromagnetic radiation, bonding the auxiliary carrier to the semiconductor body, wherein the grid is formed in the base body prior to the bonding and has a plurality of openings, and wherein after bonding, the base body is removed for exposing the grid and forming a converter layer by at least partially filling the openings of the grid, the converter layer for converting the electromagnetic radiation with respect to its peak wavelength.

Abstract: A method of manufacturing an optoelectronic component includes: A) providing a substrate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.

Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the method include A) providing at least two source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chip; B) providing a target substrate having a mounting plane, the mounting plane being configured for mounting the semiconductor chip; and C) transferring at least part of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips, within one type, maintain their relative position with respect to one another, so that each type of semiconductor chips arranged on the target substrate has a different height above the mounting plane, wherein the semiconductor chips are at least one of at least partially stacked one above the other or at least partially applied to at least one casting layer.

Abstract: In various embodiments, a light-emitting diode arrangement is provided. The light-emitting diode arrangement includes a first substrate with a first light-emitting diode which is arranged on the first substrate such that light emitted by it radiates in a main emission direction of the light-emitting diode arrangement, and a second substrate with a second light-emitting diode which is arranged on the second substrate such that light emitted by it radiates in the main emission direction of the light-emitting diode arrangement. The second substrate is arranged above the first substrate, such that the second substrate at least partly covers the first substrate.

Abstract: A carrier for an optoelectronic component includes a main body, wherein the main body includes a first electrically conductive heating layer arrangement, a first solder layer for soldering an optoelectronic component to the main body is arranged on a first side of the main body, the first electrically conductive heating layer arrangement is electrically insulated from the first solder layer and thermally connected to the first solder layer, and the first heating layer arrangement has an exposed portion on which molten solder of the first solder layer can flow to reduce an electrical resistance of the first heating layer arrangement.

Abstract: A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.

Abstract: A method for transferring semiconductor bodies and a semiconductor chip are disclosed.

Abstract: A semiconductor chip includes an electrically insulating layer including a first opening and a second opening, an electrically conductive first connection point, and an electrically conductive second connection point, wherein a carrier mechanically connects to a semiconductor body, the active region electrically connects to a first conductor body and a second conductor body, the electrically insulating layer covers the carrier on a side thereof facing away from the semiconductor body, the first connection point electrically connects to the first conductor body through the first opening, the second connection point electrically connects to the second conductor body through the second opening, the first conductor body is at a first distance from a second conductor body, the first connection point is at a second distance from the second connection point, and the first distance is less than the second distance.

Abstract: A laser diode includes a semiconductor body having a substrate and a semiconductor layer sequence arranged on the substrate, which includes an active zone that generates electromagnetic radiation, wherein the semiconductor body has a first main surface and a second main surface opposite the first main surface and at least one first and second laser facet, which are respectively arranged transversely to the first and second main surfaces, and at least one structured facet region located at a transition between the first main surface and at least one of the first and second laser facets, and the structured facet region includes at least a strained compensation layer or a recess.

Abstract: A sensor includes a printed circuit board; at least one semiconductor chip arranged on the printed circuit board and includes a front-side contact, wherein the semiconductor chip is a radiation-detecting semiconductor chip; an embedding layer arranged on the printed circuit board and laterally adjoining the at least one semiconductor chip; and a contact layer connected to the front-side contact of the at least one semiconductor chip.

Abstract: A device and a connection carrier are disclosed. In an embodiment a device includes a connection carrier, a frame and an encapsulation body, wherein the connection carrier, the encapsulation body and/or the frame have different thermal expansion coefficients, a semiconductor chip mechanically and electronically connected to the connection carrier and a metal layer arranged between the connection carrier and the frame, wherein the encapsulation body surrounds the semiconductor chip and is adjacent to the connection carrier and the frame, wherein the metal layer is not in electrically conductive connection, and wherein the metal layer projects beyond the frame in a lateral direction.

Abstract: A filament includes a plurality of strings including radiation-emitting semiconductor chips electrically connected in series; and a plurality of contact structures to contact the strings, wherein the contact structures electrically connect to semiconductor chips at ends of the strings such that the strings are electrically drivable via the contact structures, and the filament is configured such that the strings are electrically drivable at least separately from one another via the contact structures.

Abstract: A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.

Abstract: Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ?5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size <5 microns. Methods of making such wavelength converters and devices including such wavelength converters are also described.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Abstract: A method of producing an optoelectronic element with a light emitting component, includes arranging a sacrificial layer at least above a part of a light emitting side of the component, forming at least in a part of an outer surface of the sacrificial layer an inverted optic structure, covering the outer surface of the sacrificial layer by a light transparent layer, transferring the inverted optic structure to an inner side of the transparent layer, and removing the sacrificial layer and forming a gap between the component and the light transparent layer, wherein the light transparent layer includes at the inner side the optic structure.