Abstract: An optoelectronic component may be produced by providing a temporary carrier, applying a functional film to the temporary carrier, arranging optoelectronic elements within openings of the functional film in such a way that the mounting sides are facing towards the temporary carrier. The optoelectronic elements are thicker than the functional film such that the elements protrude beyond the functional film in a direction away from the temporary carrier. The method may further include applying a potting compound laterally around the elements and covering the function film and curing the potting compound to form a potting. The method may further include cutting between the openings to create individual optoelectronic components.

Abstract: A method for operating a light-emitting device includes operating, at least for some pixels, a selected subpixel of a pixel and at least one further subpixel of the pixel configured to emit light of a different color to display a pure color corresponding to a dominant wavelength of the selected subpixel and providing, at least for some pixels, a correction matrix associated with the pixel for adjusting brightness of the subpixels of the pixel, wherein the correction matrix is provided by determining, at least for some pixels, a brightness of each subpixel of the pixel necessary to emit light of a given color, determining, at least for some pixels, a dominant wavelength (?r, ?g, ?b) of each subpixel, plotting dominant wavelengths (?r, ?g, ?b) of each subpixel in a CIE-XY color space and forming color triangles, and determining inner triangles of the color triangles in pairs.

Abstract: A method of attaching a semiconductor chip to a lead frame, including A) providing a semiconductor chip, B) applying a solder metal layer sequence on the semiconductor chip, C) providing a lead frame, D) applying a metallization layer sequence on the lead frame, E) applying the semiconductor chip on the lead frame via the solder metal layer sequence and the metallization layer sequence, and F) heating the arrangement produced under E) to attach the semiconductor chip to the lead frame, wherein the solder metal layer sequence includes a first metallic layer including an indium-tin alloy, a barrier layer arranged above the first metallic layer, and a second metallic layer including gold arranged between the barrier layer and the semiconductor chip.

Abstract: An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductivity type, an active region configured to generate electromagnetic radiation and a second region of a second conductivity type in a stacking direction, an electrical contact metallization arranged on a side of the second region facing away from the active region and being opaque to the electromagnetic radiation, a radiation coupling-out region surrounding the electrical contact metallization at an edge side and an absorber layer structure arranged between the electrical contact metallization and the second region.

Abstract: The method for assembling a carrier comprises a step A), in which a plurality of pigments (100), each with an electronic component (1), is provided. Further, each pigment comprises a meltable solder material (2) directly adjoining a mounting side (10) of the component. At least 63% by volume of each pigment is formed by the solder material. The mounting side of each component has a higher wettability with the molten solder material than a top side (12) and a side surface (11) of the component. In a step B), a carrier (200) with pigment landing areas (201) is provided, the pigment landing areas having higher wettability with the molten solder material of the pigments than the regions laterally adjacent to the pigment landing areas and than the side surfaces and the top sides of the components. In a step C), the pigments are applied to the carrier. In a step D), the pigments are heated so that the solder material melts.

Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.

Abstract: The application concerns a method of manufacturing optoelectronic semiconductor components (1) comprising the following steps: A) Growing a semiconductor layer sequence (3) for generating radiation onto a growth substrate (2), B) Structuring the semiconductor layer sequence (3) into emitter strands (11) so that the semiconductor layer sequence (3) is removed in gaps (12) between adjacent emitter strands (11), C) Applying a passivation layer (4), the semiconductor layer sequence (3) at waveguide contacts (51) remote from the growth substrate (2) and the gaps (12) remaining at least partially free, D) Producing at least one metal layer (50), which extends from the waveguide contacts (51) into the gaps (12), E) Replacing the growth substrate (2) with a carrier (6), F) Making vias (53) in the carrier (6) so that the metal layer (50) and underside contacts (52) of the semiconductor layer sequence (3) facing the carrier (6) are electrically contacted, and removing the carrier (6) between at least some of the emitt

Abstract: A light-emitting semiconductor chip and a display device are disclosed. In an embodiment a light-emitting semiconductor chip includes an emission surface formed with a plurality of first emission regions and second emission regions, wherein the first emission regions and the second emission regions are configured to emit light of a predeterminable color location, wherein the first and second emission regions are separately controllable from each other, wherein the first emission regions and second emission regions are arranged next to one another in a first plane, wherein all second emission regions form at least a part of an outer edge of the emission surface, and wherein the first emission regions have a smaller extent than the second emission regions along at least one direction lying in the first plane.

Abstract: A display device is disclosed. In an embodiment a device includes at least one optoelectronic semiconductor component configured to generate primary radiation, a plurality of pixels, wherein each pixel includes at least a first subpixel configured to generate radiation in a first spectral range and a second subpixel configured to generate radiation in a second spectral range different from the first spectral range, wherein the first and second subpixels are each assigned an active region of the semiconductor component; and a radiation conversion element arranged downstream of at least some of the active regions, wherein the radiation conversion element configured to at least partially convert the primary radiation into a secondary radiation and to radiate the secondary radiation at a narrow angle.

Abstract: A radiation emitting component and a method for producing a radiation emitting component are disclosed. In an embodiment a radiation emitting component includes a radiation emitting semiconductor chip having an active zone configured to generate electromagnetic radiation of a first wavelength range, a reflector having side walls and a bottom surface and a conversion layer comprising a first phosphor configured to convert the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, wherein the conversion layer is located at the side walls of the reflector, wherein the conversion layer has a cross-sectional area, which decreases from the bottom surface of the reflector to a radiation exit surface of the component, and wherein the reflector is filled with a conversion element comprising a second phosphor configured to convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a third wavelength range.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a carrier having a pedestal with a support surface, applying a liquid joining material with filler particles to the support surface of the pedestal and applying a radiation emitting semiconductor chip with a mounting surface, which is larger than the support surface of the pedestal to the liquid joining material such that the joining material forms a joining layer between the support surface of the pedestal and the mounting surface of the semiconductor chip and the joining material at least partially fills only a recess, which is limited by a part of the mounting surface projecting beyond the support surface.

Abstract: A display device is disclosed. In an embodiment a display device having a plurality of pixels separately operable from each other includes a semiconductor layer sequence including a first semiconductor layer, an active layer and a second semiconductor layer, a first contact structure contacting the first semiconductor layer and a second contact structure contacting the second semiconductor layer and at least one separating region extending through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, wherein the semiconductor layer sequence and the first contact structure have at least one first recess laterally adjacent with respect to a respective pixel, the first recess extending through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, and wherein the second contact structure includes second contacts extending through the at least one first recess.

Abstract: An optoelectronic component includes an active layer having a multiple quantum well structure, wherein the multiple quantum well structure includes quantum well layers, including Alx1Iny1Ga1-x1-y1N with 0?x1<0.03, 0?y1?0.1 and x1+y1?1, and barrier layers including Alx2Iny2Ga1-x2-y2N with 0?x2?1, 0?y2?0.02 and x2+y2?1, wherein the barrier layers have a spatially varying aluminium content x2, a maximum value of the aluminium content in the barrier layers is x2,max?0.05, and a minimum value of the aluminium content in the barrier layers is x2,min<0.05.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation, a dielectric layer, a solder layer including a first metal arranged on the dielectric layer and a seed layer arranged between the solder layer and the dielectric layer, wherein the seed layer includes the first metal and a second metal, wherein the second metal is less noble than the first metal, wherein an amount of the second metal in the seed layer is between 0.5 wt % and 10 wt %, and wherein the first metal is Au and the second metal is Zn.

Abstract: A silicone composition includes a multiphase mixture of a low-refractive silicone having a refractive index n25D589 less than 1.45 and a high-refractive silicone having a refractive index n25D589 greater than 1.50, wherein a proportion of high-refractive silicone is 0.1 to 5.0 mass percent in relation to a total mass of high-refractive and low-refractive silicone, and the high-refractive silicone forms inclusions within the low-refractive silicone.

Abstract: A method of transferring semiconductor chips includes providing a transfer tool having a plurality of segments, each segment having a liquid receiving area; providing a plurality of semiconductor chips in a regular array on a source carrier; providing a target carrier; selectively arranging liquid drops on the liquid receiving areas of some of the segments; causing the transfer tool to approach the source carrier, each liquid drop contacting and wetting a semiconductor chip; lifting the transfer tool from the source carrier, wherein semiconductor chips wetted by liquid drops are lifted from the source carrier by the transfer tool; causing the target carrier by the transfer tool, to approach the semiconductor chips arranged on the transfer tool contacting the target carrier; and lifting the transfer tool from the target carrier, the semiconductor chips contacting the target carrier remaining on the target carrier

Abstract: A component includes a light emitting semiconductor chip, wherein the semiconductor chip includes a layer arrangement including a plurality of layers, the p-conducting layer and the n-conducting layer adjoin one another in an active zone, a first electrical contact is configured on the p-conducting side of the layer arrangement at a first side of the semiconductor chip, a second electrical contact is configured on the n-conducting side of the layer arrangement at a second side of the semiconductor chip, the second side being situated opposite the first side of the semiconductor chip, the first side of the semiconductor chip transitions into the second side via an end side, the semiconductor chip is secured by the end side on a substrate, the substrate includes a first and second further electrical contact, and the further electrical contacts electrically conductively connect to the electrical contacts of the semiconductor chip.

Abstract: A method of producing optoelectronic semiconductor components includes A) providing a chip carrier with electrical conductor structures on a carrier upper side, B) applying at least one semi-conductor chip configured to produce light on at least one of the electrical conductor structures, C) applying at least one sealing structure to at least one of the electrical conductor structures so that the sealing structure completely surrounds at least one contact area when viewed from the top, and D) producing a mold body directly at the at least one semiconductor chip and directly at the at least one sealing structure by transfer molding or injection molding, wherein, in an injection mold, the at least one sealing structure seals the at least one contact area against a material of the mold body so that the at least one contact area remains free of the mold body.

Abstract: A light-emitting diode chip that includes an epitaxial semiconductor layer sequence having an active region that generates electromagnetic radiation during operation, and a passivation layer comprising magnesium oxide and magnesium nitride. The passivation layer may be applied to a lateral surface of the semiconductor layer sequence, and the passivation layer covering at least the active region.

Abstract: A method of producing radiation-emitting semiconductor components includes arranging radiation-emitting semiconductor chips on a conversion layer; thickening the conversion layer next to and between the semiconductor chips by applying a filling compound containing phosphor, wherein the thickened conversion layer adjoins a front side and side faces of the semiconductor chips; forming a reflective layer on the conversion layer and on the semiconductor chips in a region of a rear side of the semiconductor chips, wherein a rear-side surface of the contacts of the semiconductor chips remains uncovered; and severing the reflective layer and the conversion layer to form singulated semiconductor components including a single semiconductor chip, a part of the conversion layer arranged on the front side and on the side faces of the semiconductor chip, and a part of the reflective layer arranged in the region of the rear side on the semiconductor chip and on the conversion layer.