Abstract: In an embodiment, a method for producing a plurality of optoelectronic semiconductor components is disclosed, wherein the method includes inserting a plurality of optoelectronic semiconductor chips with a suitable orientation into a linear feeding device, conveying the optoelectronic semiconductor chips to an injection device having an outlet opening, encapsulating the optoelectronic semiconductor chips with at least one cladding layer in the injection device and pressing the encapsulated optoelectronic semiconductor chips out of the outlet opening, wherein a compound of optoelectronic semiconductor chips is formed in which the optoelectronic semiconductor chips are connected to one another by the at least one cladding layer and separating the compound into a plurality of optoelectronic semiconductor components each component having an optoelectronic semiconductor chip which is at least partially encapsulated by the at least one cladding layer.

Abstract: A lens that spreads light from a point light source includes a light entry side having a first Fresnel structure, a light exit side having a second Fresnel structure different from the first Fresnel structure, a section plane located entirely between the first and second Fresnel structures so that the lens is flat, and a central axis as an optical axis perpendicular to the section plane, wherein a height of Fresnel rings of the first Fresnel structure, referred to the section plane, increases in the direction away from the central axis, the Fresnel rings of the first Fresnel structure each have an entry surface facing towards the central axis and a deflecting surface facing away from the central axis, and Fresnel rings of the second Fresnel structure each have a mirror surface facing towards the central axis and an exit surface facing away from the central axis.

Abstract: A method of producing a radiation-emitting semiconductor chip includes providing a growth substrate, epitaxially growing a buffer layer on the growth substrate such that a plurality of V-pits is generated in the buffer layer, epitaxially growing a radiation-generating active semiconductor layer sequence on the buffer layer, wherein the structure of the V-pits continues into the active semiconductor layer sequence, epitaxially growing a further layer sequence on the active semiconductor layer sequence, wherein the structure of the V-pits continues into the further layer sequence, selectively removing the further layer sequence from facets of the V-pits, wherein the further layer sequence remains on a main surface of the active semiconductor layer sequence, and epitaxially growing a p-doped semiconductor layer that completely or partially fills the V-pits.

Abstract: A method for producing a plurality of optoelectronic components are disclosed.

Abstract: A method for producing at at least an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a substrate having at least one aperture, applying at least one semiconductor chip to the substrate, arranging barrier structures provided that the barrier structures are not already part of the substrate, wherein the semiconductor chip is spaced apart from the barrier structures as seen in a side cross-section, applying an auxiliary carrier at least to a main radiation exit surface and to the barrier structures, introducing a casting material via the at least one aperture in the substrate so that the casting material is arranged between the barrier structures and the semiconductor chip and between the substrate and the auxiliary carrier, and curing the casting material.

Abstract: An optoelectronic component includes a radiation side, a contact side opposite a radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, and a semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs electromagnetic radiation during normal operation, wherein the contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component, the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in plan view of the contact side the cooling element covers one or both contact elements partially.

Abstract: A method and device for slurrying a suspension, the device including a mixing container with an inlet opening configured to introduce the suspension into the mixing container, a distributor element having a collecting container and an outlet arm fastened to the collecting container, and a shaft with a longitudinal axis, with the shaft and the distributor element arranged inside the mixing container, and the distributor element rotatable around the shaft. The collecting container has a collecting opening that permits passage of the suspension from the inlet opening into the distributor element, the outlet arm has an outflow opening that lets the suspension leave the distributor element, and the outlet arm permitting the suspension to flow out of the distributor element, with a flow of the suspension causing a torque on the distributor element so that the torque supports a rotation around the shaft.

Abstract: A component module includes a component holder having a curved upper side, and a radiation-emitting component arranged in a curved shape on the upper side, wherein the component holder includes a heat-distributing region on the upper side, a neutral fiber running inside the component, an adhesive is planar and arranged between the radiation-emitting component and the upper side, and the adhesive fixes the radiation-emitting component on the upper side.

Abstract: A light-emitting semiconductor chip, a light-emitting component and a method for producing a light-emitting component are disclosed. In an embodiment a light-emitting semiconductor chip includes a light-transmissive substrate having a top surface, a bottom surface opposite the top surface, a first side and a second side surface arranged opposite the first side surface, a semiconductor body arranged on the top surface of the substrate and a contacting including a first current distribution structure and a second current distribution structure, wherein the first current distribution structure and the second current distribution structure are freely accessible from a side of the semiconductor body facing away from the substrate, and wherein the semiconductor chip, on the side of the semiconductor body facing away from the substrate and on the bottom surface of the substrate, is free of any connection point configured to electrically contact the first and second current distribution structures.

Abstract: An optoelectronic component includes a light emitter including a multiplicity of image points configured to emit light, and an optical element configured to guide light emitted by the light emitter into a target region, wherein a lower side facing toward the light emitter of the optical element is subdivided into four quadrants, each quadrant includes a Fresnel structure having a multiplicity of ridges extending along concentric annular arcs, the ridges of the Fresnel structure in each quadrant are respectively curved around a center shifted relative to a midpoint of the lower side of the optical element, and the center in each quadrant is arranged at a corner of the lower side of the optical element.

Abstract: A method for exposing side surfaces of a semiconductor body is disclosed. In an embodiment a method includes providing the semiconductor body having a laterally extending first main surface, forming a plurality of vertical side surfaces by partially removing material of the semiconductor body and thereby removing the first main surface in places, wherein each of the side surfaces forms an angle (?) between 110° and 160° inclusive with the remaining first main surface, applying a protective layer onto the semiconductor body so that, in a plan view, the protective layer completely covers the remaining first main surface and the obliquely formed side surfaces and partially removing the protective layer so that the protective layer is removed in regions on the obliquely formed side surfaces because of an inclination and remains at least partially preserved in regions on the remaining first main surface during a common process operation.

Abstract: A light-emitting component includes a light-emitting element and a housing with a cavity. The housing includes a housing material that absorbs at least 80 percent of light in the visible range. The cavity is formed by a limiting wall, formed by a housing surface, and a plane of the element. The light-emitting element arranged within the cavity of the housing and positioned above the element plane includes an emission side located opposite to the element plane. The cavity is at least partially filled with a transparent material composed of a first material and a second material, wherein the first material at least partially covers the limiting wall, and the second material at least partially covers the emission side. A boundary surface is formed between the first material and the second material. A first refractive index of the first material is smaller than a second refractive index of the second material.

Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.

Abstract: A method of producing an optoelectronic device includes providing an optical element including an optical lens and including a frame, wherein the frame projects with a receptacle section beyond a first side of the lens, the receptacle section of the frame surrounds a receptacle space, and the receptacle section of the frame includes a bearing face at an inner side; inserting an optoelectronic component and a transparent intermediate element into the receptacle space; placing the intermediate element onto the bearing face; and securing the component and the intermediate element to the frame.

Abstract: A method of operating a camera system having an image sensor including a plurality of activatable image elements, wherein an active image element converts incoming radiation into readable image information, a radiation source including a plurality of activatable radiation elements, each active radiation element emitting electromagnetic radiation, and an integrated circuit coupled to the radiation source, the method including capturing at least one image, wherein during capturing of each single image different subsets of the image elements are successively each once activated and deactivated again after a predetermined exposure time, different subsets of the radiation elements are successively activated by the integrated circuit and deactivated again after a predetermined emission time, and each subset of the image elements is assigned a subset of the radiation elements activated with temporal overlap so that the active radiation elements emit radiation while the associated active image elements receive image

Abstract: An optoelectronic component includes a carrier, an optoelectronic arrangement, and a potting material, wherein the optoelectronic arrangement includes an optoelectronic semiconductor chip, the optoelectronic arrangement is arranged above a top side of the carrier, the potting material is arranged above the top side of the carrier such that the optoelectronic arrangement is embedded into the potting material, a radiation emission face of the optoelectronic arrangement is not covered by the potting material, and a surface of the potting material is formed above the radiation emission face in relation to the top side of the carrier.

Abstract: A method for operating a display device is disclosed. In an embodiment, a method for displaying images or films via a display device includes emitting, for each radiation direction, a partial image composed of sub-pixels of all pixels belonging to this radiation direction and receiving control data for at least some of the sub-pixels at the display device by a data compression algorithm, wherein the data compression algorithm comprises a delta coding, wherein the delta coding includes an initial value, wherein the initial value includes one of the partial images defined as a main image, wherein at least some of the remaining partial images are received as deviations from the main image, and wherein edges of a three-dimensional object to be displayed are excluded from data compression when merging surfaces enclose a real angle of 135° or less.

Abstract: An optoelectronic circuit assembly has a first optoelectronic component and a second optoelectronic component, wherein the optoelectronic components each comprise a housing body with an upper face and a lower face, wherein in the housing body of each optoelectronic component, a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are embedded, wherein the optoelectronic components are mounted on a circuit board, wherein the first optoelectronic semiconductor chip of the first optoelectronic component and the first optoelectronic semiconductor chip of the second optoelectronic component are connected to a first conductor track in an electrically conductive manner, wherein the second optoelectronic semiconductor chip of the first optoelectronic component and the second optoelectronic semiconductor chip of the second optoelectronic component are connected to a second conductor track in an electrically conductive manner, wherein the first optoelectronic semiconductor chip or the

Abstract: An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. The edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. The active zone is configured for being energized only in a longitudinal strip perpendicular to a growth direction of the semiconductor layer sequence. The semiconductor layer sequence has a constant thickness throughout in the region of the longitudinal strip so that the semiconductor laser is gain-guided. The stress layer may locally stress the semiconductor layer sequence in a direction perpendicular to the longitudinal strip and in a direction perpendicular to the growth direction. A refractive index of the semiconductor layer sequence, in regions which, seen in plan view, are located next to the longitudinal strip, for the laser radiation generated during operation is reduced by at least 2×10?4 and by at most 5×10?3.

Abstract: A method of producing side-emitting components includes providing a plurality of semiconductor chips on an auxiliary carrier, wherein the semiconductor chips on the auxiliary carrier are spaced apart from each other and each have a side surface provided with a transparent protective layer; covering the semiconductor chips with a radiation-reflecting molding compound so that in a plan view of the auxiliary carrier, the semiconductor chips are completely covered by the molding compound; and singulating the molding compound and the semiconductor chips into a plurality of components so that the components each include a semiconductor chip, wherein the components are singulated at the associated transparent protective layer, as a result of which the components each have a radiation exit surface exposed by the molding compound and formed by a surface of the remaining or exposed transparent protective layer.