Abstract: An optoelectronic component includes a carrier with at least two radiation sources that generate electromagnetic radiation, including a housing consisting of a material non-transmissive to the electromagnetic radiation from the radiation sources, wherein at least two openings are provided in the housing, each opening is closed with a plate, the plate consists of a material transmissive to the electromagnetic radiation from the respective radiation source, and a radiation source is respectively assigned to an opening.

Abstract: A semiconductor laser including an active zone and a waveguide, wherein the active zone includes an active layer configured to generate electromagnetic radiation during operation of the semiconductor laser, the waveguide is configured to guide the electromagnetic radiation generated during operation of the semiconductor laser within the semiconductor laser, the waveguide includes a subregion formed from a compound semiconductor material, wherein a proportion of a material of the compound semiconductor material gradually increases in the entire subregion along the vertical direction toward the active zone so that a refractive index of the subregion gradually decreases toward the active zone, and the proportion is an aluminum proportion or a phosphorus proportion.

Abstract: A method of producing an optoelectronic component includes providing a carrier, generating a plurality of recesses in the carrier, applying a plurality of drops of a cover material to the carrier, introducing an optoelectronic semiconductor chip including a semiconductor body and contact elements on an underside of the semiconductor body into at least some of the drops, and curing the drops of the cover material into cover bodies, wherein at least some of the drops are completely surrounded by recesses in the carrier, and the recesses in the carrier are a stop edge for the cover material during introduction of the optoelectronic semiconductor chip.

Abstract: A method of operating an optoelectronic component, including a plurality of picture elements and a plurality of temperature sensors, wherein the picture elements are each configured to emit light, and the temperature sensors thermally conductively connect to the picture elements, the method including acquiring temperature values supplied by the temperature sensors; and controlling the picture elements in dependence on the acquired temperature values.

Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

Abstract: A measuring arrangement having an optical transmitter and an optical receiver are disclosed. In an embodiment a measuring arrangement includes an optical transmitter configured to transmit electromagnetic measuring radiation into a transmission space, an optical receiver configured to receive measuring radiation reflected by an object in a reception space and a covering configured to reduce reception of an interference radiation by the receiver, wherein the interference radiation is measuring radiation not reflected by the object.

Abstract: An optoelectronic component includes a light emitting semiconductor chip, including an emission side and comprising an underside, wherein the optoelectronic component is configured to emit light via the emission side, the optoelectronic component including an insulating layer, the light emitting semiconductor chip is embedded into the insulating layer, the light emitting semiconductor chip including two electrical contact locations, the contact locations face away from the emission side, a first and a second electrically conductive contact layer are provided, respectively, an electrically conductive contact layer electrically conductively connects to a contact location of the semiconductor chip, the electrically conductive contact layers are arranged in the insulating layer, the first electrically conductive contact layer adjoins a first side face of the optoelectronic component, and the second electrically conductive contact layer adjoins a second side face of the optoelectronic component.

Abstract: An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.

Abstract: The disclosure relates to a semiconductor laser includes a semiconductor layer sequence with an-n-type n-region, a p-type p-region and an active zone lying between the two for the purpose of generating laser radiation. A p-contact layer that is permeable to the laser radiation and consists of a transparent conductive oxide is located directly on the p-region for the purpose of current input. An electrically-conductive metallic p-contact structure is applied directly to the p-contact layer. The p-contact layer is one part of a cover layer, and therefore the laser radiation penetrates as intended into the p-contact layer during operation of the semiconductor laser. Two facets of the semiconductor layer sequence form resonator end surfaces for the laser radiation.

Abstract: An organic optoelectronic component includes an organic functional layer stack between a first electrode and a second electrode including a light-emitting layer formed to emit a radiation during operation of the component, and a coupling-out layer arranged above the first electrode and/or the second electrode which is in a beam path of the radiation of the light-emitting layer, wherein the coupling-out layer includes a structured layer and a planarization layer arranged thereabove and the structured layer has a structured surface structured at least in places, the planarization layer planarizes the structured surface of the structured layer, and a difference in the refractive indices of the structured layer and the planarization layer is smaller than 0.3 at least in places.

Abstract: An optoelectronic device and a method are disclosed.

Abstract: A method produces a plurality of conversion elements including: A) providing a first carrier; B) applying a first element to the first carrier using a first application technique, the first element including a conversion material, the first application technique being different from compression molding; C) applying a second element to the first carrier by a second application technique, the second element including quantum dots, the quantum dots being introduced into a matrix material and being different from the conversion material, the second application technique being molding or compression molding; D) hardening of the matrix material; E) optionally, rearranging the arrangement produced according to step D) to a second carrier; and F) separating so that a plurality of conversion elements are generated.

Abstract: A video wall module includes a plurality of light emitting diode chips, each including first contact electrodes and second contact electrodes arranged at a contact side, wherein the light emitting diode chips are arranged at a top side of a multilayer circuit board, and the contact electrodes electrically conductively connect to a first metallization layer arranged at the top side of the circuit board.

Abstract: A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.

Abstract: The invention relates to a red-emitting luminescent material of the formula AE16?xCexSi17?zAlzN32+y?zO2?y+z wherein AE=Mg, Ca, Sr and/or Ba, 0<x?2, 0?y<5, 0?z?3 and y+z<2.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip including a first potting body; and a second potting body, wherein the first potting body covers all lateral side surfaces and a top surface of the semiconductor chip, the first potting body has a bottom surface flush with a connection surface of the semiconductor chip, the second potting body has a bottom surface flush with the bottom surface of the first potting body, the second potting body completely covers all side surfaces of the first potting body facing away from the semiconductor chip, a top surface of the second potting body on the opposite of the connection surface is convexly curved, and the optoelectronic semiconductor chip has exclusively on its connection surface exposed electrical contact surfaces via which the semiconductor chip is electrically connectable and operable.

Abstract: A lighting device for a mobile terminal is disclosed. In an embodiment the lighting device includes a light-emitting component comprising a light-emitting semiconductor element and a first light emission face and a second light emission face, the light-emitting component configured to emit light radiation, a first optical waveguide for guiding the light radiation via the first light emission face to a first radiation element, a second optical waveguide for guiding the light radiation via the second light emission face to a second radiation element and at least one optical switch arranged in a region of the first light emission face or the second light emission face for controlling a quantity of light emitted from the light-emitting component via the respective light emission face.

Abstract: A method of producing an optoelectronic component includes providing a carrier having an upper side; providing a mat configured as a fiber-matrix semifinished product and having a through-opening; arranging an optoelectronic semiconductor chip over the upper side of the carrier; arranging the mat over the upper side of the carrier such that the optoelectronic semiconductor chip is arranged in the opening of the mat; and compacting the mat to form a composite body including the mat and the optoelectronic semiconductor chip.

Abstract: An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region, a second semiconductor region and an active zone disposed between the first and second semiconductor regions, an electrically conductive contact layer arranged on a side of the first semiconductor region facing away from the second semiconductor region, and an electrically conductive mirror layer arranged between the first semiconductor region and the electrically conductive contact layer, and laterally protruding at the edge by the first semiconductor region and the electrically conductive contact layer so that between the first semiconductor region and the electrically conductive contact layer there is an interspace in which a protective layer is arranged for protecting the mirror layer, wherein the electrically conductive contact layer extends laterally to an edge of the first semiconductor region, and the electrically conductive contact layer consists of Ni.

Abstract: A driver circuit for at least one light-emitting optoelectronic component includes a control circuit having a capacitor and a control switch, wherein the control switch electrically connects to the component such that the component is supplied with current by the capacitor as a function of a switching state of the control switch, and a charging circuit having at least a first charging switch, a bias resistor and a buffer capacitor, wherein the charging circuit electrically connects to the capacitor and is configured to charge the capacitor through the bias resistor, and the buffer capacitor is linked to a connecting line between the bias resistor and the capacitor.