Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction, wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions, wherein the ridge includes a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region, wherein the ridge has a first width in the first region, and wherein the ridge has a second width in the second region, the second width being larger than the first width.

Abstract: A module for a video wall is disclosed. In an embodiment a module includes a carrier, a plurality of components comprising at least one light-emitting structural element arranged on the carrier and an optical element, wherein the components are arranged at a prespecified lateral distance in relation to one another, wherein a retaining recess is formed between at least two components, wherein the retaining recess comprises at least two component recesses of two components which are arranged next to one another, wherein a retaining pin is fastened in the retaining recess, wherein the retaining pin is connected to the optical element, and wherein the optical element is configured to influence light irradiation onto the components and/or light emission from the components.

Abstract: The invention relates to a laser assembly, wherein, in one embodiment, the laser assembly (1) comprises a plurality of laser groups (2) each having at least one semiconductor laser (20). Furthermore, the laser assembly (1) contains a plurality of photothyristors (3), each laser group (2) being clearly assigned one of the photothyristors (3). The photothyristors (3) are each connected electrically in series with the associated laser group (2) and/or integrated in the associated laser group (2). Furthermore, the photothyristors (3) are each optically coupled to the associated laser group (2). A dark breakdown voltage (Ut) of each photothyristor (3) lies above an intended operating voltage (Ub) of the associated laser group (2).

Abstract: A light-emitting component is disclosed. In an embodiment the light-emitting device includes a first layer stack for generating light, at least one additional layer stack for generating light, wherein each of the first layer stack and the at least one additional layer stack are separately drivable from one another and an auxiliary structure arranged between the first layer stacks and the at least one additional layer stacks.

Abstract: The invention relates to a method for laterally structuring a structured layer (2) with a plurality of three-dimensional structure elements (20), having the following steps: a) providing the structured layer with the three-dimensional structure elements; b) forming a laterally structured covering layer (3) on the structured layer in order to define at least one structured layer region (4) to be removed; and c) removing the structured layer region to be removed by means of a force acting on the structure elements in the region to be removed. The invention further relates to a semiconductor component (1).

Abstract: The invention relates to an organic light-emitting component (100), comprising a functional layer stack (9) between two electrodes (1, 8), wherein the functional layer stack (9) has at least two organic light-emitting layers (2, 7) and at least one charge carrier generation zone (3), which is arranged between the two organic light-emitting layers (2, 7), wherein the charge carrier generation zone (3) comprises an electron-conducting organic layer (31) and a hole-conducting organic layer (32), between which an intermediate region (4) is arranged, wherein the intermediate region (4) comprises at least one organic intermediate layer (6) which has a first charge carrier transport mechanism and an inorganic intermediate layer (5) which has a second charge carrier transport mechanism, wherein the inorganic intermediate layer (5) is arranged between the organic intermediate layer (6) and the electron-conducting organic layer (31), and wherein the first charge carrier transport mechanism is at least partially differe

Abstract: A method includes providing a metallic auxiliary carrier and forming metallic structure elements on the auxiliary carrier by carrying out at least one metal deposition process with the aid of at least one masking layer. Provision is furthermore made for arranging a reflective embedding material enclosing the metallic structure elements on the auxiliary carrier and removing the auxiliary carrier, such that a carrier comprising the structure elements and the embedding material and comprising two opposite main sides is provided. The main sides of the carrier are formed by the structure elements and the embedding material. The method furthermore includes arranging radiation-emitting semiconductor chips on the carrier, arranging a conversion material for radiation conversion on the carrier provided with the semiconductor chips, and carrying out a singulation process of forming separate radiation-emitting components.

Abstract: According to the disclosure, a method for producing an organic component is provided. The method includes providing a carrier substrate; forming an electrically conductive layer on or above the carrier substrate; applying an electrical potential to the electrically conductive layer; and forming at least one organic, functional layer for forming the organic component on or above the electrically conductive layer at least partly during the process of applying the electrical potential to the electrically conductive layer.

Abstract: A filament includes a radiation-transmissive substrate, a plurality of light emitting diodes and a converter layer, wherein the substrate has an upper side and a lower side facing away from the upper side, and the LEDs are arranged on the upper side of the substrate, the converter layer covers the LEDs, the upper side and the lower side of the substrate, and the converter layer has a first sublayer on the upper side and a second sublayer on the lower side, and the converter layer is configured to obtain an improved radiation profile of the filament such that the converter layer has a varying vertical layer thickness along a lateral direction, and/or the first sublayer and the second sublayer differ from one another in their geometry and/or material composition.

Abstract: The invention relates to an optoelectronic semiconductor component (10) comprising a substrate (1), a first insulator layer (2), and a second insulator layer (3). Furthermore, the semiconductor component (10) comprises an organic semiconductor layer sequence (4) having an active area (4a) which, during operation, generates or receives light, a first electrode (5) and a second electrode (6), and encapsulation (7) which covers the organic semiconductor layer sequence (4) and the first insulator layer (2) completely and covers the second insulator layer (3) and the first electrode (5) or the second electrode (6) partially. Here, the first electrode (5) is arranged between the organic semiconductor layer sequence (4) and the first insulator layer (2), and the second electrode (6) is arranged on the organic semiconductor layer sequence (4), wherein the first electrode (5) and/or the second electrode (6) is/are at least partly arranged on the second insulator layer (3).

Abstract: An organic light-emitting component is disclosed. In an embodiment, the component includes an organic functional layer stack between two electrodes, wherein the organic functional layer stack comprises at least two organic light-emitting layers and at least one charge generation layer, and wherein at least one of the at least two organic light-emitting layers is part of the charge generation layer.

Abstract: A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged; arranging a protection diode on the first contact and the second contact; galvanically growing a first pin on the first electrical contact and a second pin on the second electrical contact; and embedding the first pin, the second pin, and the protection diode in a molded body.

Abstract: A single photon source includes a semiconductor body and a transducer, wherein the transducer during operation of a single photon source can be coupled into an active zone, disposed between a first and second semiconductor layer of the semiconductor body, the active zone and the transducer are arranged at a same vertical height to a carrier of the single photon source and piezoelectric intermediate layer material so that the intermediate layer is a propagation medium for surface waves generated or excited by the transducer, the intermediate layer is arranged in places between the first semiconductor layer and the active zone and adjoins the active zone, and an electrical insulation between the intermediate layer and the transducer is achieved by the intermediate layer being undoped at least in overlapping regions with the transducer or by an insulating layer being arranged between the transducer and the intermediate layer.

Abstract: A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.

Abstract: The invention relates to an organic electronic component (100) comprising at least one charge generation layer (5) which has an organically p-doped region (5a) that contains a zinc complex as a p-dopant, said zinc complex in turn containing at least one ligand L of the following structure: formula (I) wherein R1 and R2 can be oxygen, sulphur, selenium, NH or NR4 independently from one another, wherein R4 is selected from the group containing alkyl or aryl and which can be bonded to R3; and wherein R3 is selected from the group containing alkyl, long-chain alkyl, cycloalkyl, halogen alkyl, at least partially halogenated long-chain alkyl, halogen cycloalkyl, aryl, arylene, halogen aryl, heteroaryl, heteroarylene, heterocyclic alkylene, heterocycloalkyl, halogen heteroaryl, alkenyl, halogen alkenyl, alkynyl, halogen alkynyl, ketoaryl, halogen ketoaryl, ketoheteroaryl, ketoalkyl, halogen ketoalkyl, ketoalkenyl, halogen ketoalkenyl, halogen alkyl aryl, and halogen alkyl heteroaryl, wherein, for suitable groups, on

Abstract: The invention relates to an organic light-emitting device comprising an organic stack of layers between two electrodes. The organic stack of layers comprises a first light-emitting layer and the first light-emitting layer comprises an emitter material adapted to generate electromagnetic radiation during operation of the device. Taken together, the transition dipole moments of the radiation generating transition of the molecules of the emitter material have an anisotropic orientation inside the first light-emitting layer, and it applies that <cos2?> is less than ?, where ? is the angle between the respective transition dipole moment of the radiation generating transition of the molecules of the emitter material and a layer normal of the first light-emitting layer.

Abstract: An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. A radiation-transmissive body having four side faces is provided. The radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner. The radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60° and 70° to the mounting face. The base member has a thickness which amounts to at most 250 ?m.

Abstract: A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.

Abstract: A method for identifying a short in a first light emitting diode element may include providing a first actuating circuit being a switched-off condition, wherein an output thereof is coupled to a first electrode of the first light emitting diode element, providing a second actuating circuit being a switched-off condition, wherein an output thereof is coupled to a first electrode of a second light emitting diode element and wherein inputs of the first and second actuating circuits, second electrodes of the first and second light emitting diode elements are electrically coupled to a first node, coupling the first electrode of the first light emitting diode element to a first connection of a test energy source, operating the first light emitting diode element in the off-state region using the test energy source, performing a check whether an electric current flows via the first light emitting diode element, and identifying the short.

Abstract: The invention relates to an optoelectronic module, comprising a housing (11) having a first housing part (11) having a first cover surface (11a) and an opening (4); a mechanically flexibly designed organic light source (2) having an illuminating surface (2a); and a cover element (3) which is mounted on the illuminating surface (2a) and has a light-transmissive surface (3a) facing away from the illuminating surface (2a), wherein the organic light source (2) is introduced at least at some points into the opening (14), the first cover surface (11a) is curved and/or bowed, the size of the illuminating surface (2a) is at least 1 cm2, preferably at least 5 cm2, and the distance between the illuminating surface (2a) and the first cover surface (11a) is at most 1 cm, preferably at most 5 mm.