Abstract: A method of producing a component module includes providing a component holder having a curved upper side and a radiation-emitting bendable component, and bending and fastening the component to the upper side so that the component has a curved shape.

Abstract: The invention relates to an assembly comprising an electric component. The component has an electric part, a control circuit, and a capacitor. At least two lead frames are provided which are embedded into a housing. The part, the control circuit, and the capacitor are arranged on the lead frames, and the control circuit is designed to charge the capacitor and to supply the part with current from the capacitor in a clocked manner. The component has two contacts, and the component is arranged on a support. The support has an electrically conductive layer and the two contacts are connected to the layer in an electrically conductive manner. At least one first part of one lead frame is arranged at a greater distance from the electrically conductive layer than the second lead frame.

Abstract: A method of producing a carrier substrate for an optoelectronic semiconductor component includes: providing a leadframe including a first electrically conductive contact section and a second electrically conductive contact section, and injection molding a housing including a housing frame embedding the leadframe by an injection-molding material free of epoxy such that the leadframe embedded in the housing frame of the injection-molded housing forms a carrier substrate for an optoelectronic semiconductor component.

Abstract: A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).

Abstract: An optoelectronic semiconductor chip includes a semiconductor body including an n-conducting region, a p-conducting region and an active region between the n-conducting region and the p-conducting region; a first mirror containing a first metallic layer, and a p-metallization containing a second metallic layer, wherein during operation of the semiconductor chip, the first mirror is not at the same electrical potential as the p-conducting region, during operation of the semiconductor chip, the p-metallization is at the same electrical potential as the p-conducting region, and the first mirror has at least one opening through which the p-metallization is electrically conductively connected to the p-conducting region.

Abstract: An arrangement includes a carrier; an optoelectronic component arranged on the carrier; and a material arranged on the carrier, wherein the carrier includes at least one structural element that hinders flow of the material in a flow direction, the structural element extends transversely to the flow direction, and the structural element has a rounding radius in a plane perpendicular to the transverse extent of the structural element less than 20 ?m.

Abstract: An LED chip includes a carrier, a semiconductor layer sequence, a reflective layer sequence arranged in regions between the carrier and the semiconductor layer sequence, wherein the reflective layer sequence includes a dielectric layer facing the semiconductor layer sequence and a metallic mirror layer facing away from the semiconductor layer sequence, and an encapsulating layer arranged in places between the carrier and the reflective layer sequence, the encapsulating layer extending in places through the reflective layer sequence into the semiconductor layer sequence and thus forming a separating web separating an inner region of the reflective layer sequence from an edge region of the reflective layer sequence.

Abstract: According to the present disclosure, a method for producing a plurality of semiconductor chips is provided with the following steps: a) providing a composite assembly, including a carrier, a semiconductor layer sequence and a functional layer; b) severing the functional layer by means of coherent radiation along a singulation pattern; c) forming separating trenches in the carrier along the singulation pattern; and d) applying a protective layer, which delimits the functional layer toward the separating trenches, on in each case at least one side surface of the semiconductor chips to be singulated. The singulated semiconductor chips each includes a part of the semiconductor layer sequence, of the carrier and of the functional layer.

Abstract: A display device and a method for operating a display device are disclosed. In an embodiment a display device includes a plurality of image points configured for emitting visible light of adjustable color by at least one semiconductor layer sequence, wherein the image points are independently controllable of one another, wherein each of the image points includes a plurality of types of pixels and each type of pixel is configured to emit light of a particular color, wherein the pixels are independently controllable of one another, wherein each of the pixels is divided into a plurality of subpixels, the subpixels being independently controllable of one another within the associated pixel, and wherein all subpixels of the associated pixel are configured for emitting light of the same color from the display device without further color change.

Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.

Abstract: In various aspects, an organic optoelectronic component and method for producing an organic optoelectronic component are described. An organic optoelectronic component may include a first electrode, an organic functional layer structure above the first electrode, a second electrode above the organic functional layer structure, an adhesive layer structure, and a protective film. The adhesive layer structure may contain a first adhesive layer above the first adhesive layer, and a second adhesive layer above the first adhesive layer. The first adhesive layer may be cured. The second adhesive layer may be adherent and elastic. The protective film may be above the second adhesive layer. The protective film may contain at least one region that is at least partly separated in a lateral direction.

Abstract: An organic electronic component and a method for making an organic electronic component are disclosed. In an embodiment the component includes an anode, an active layer arranged above the anode, an electron injection layer arranged above the active layer and a cathode arranged above the electron injection layer. The electron injection layer further comprises a first organic layer comprising a first organic matrix material, a second organic layer comprising a second organic matrix material and a metallic layer, wherein the first organic matrix material has a higher electron conductivity than the second organic matrix material.

Abstract: An optoelectronic semiconductor component is disclosed. In an embodiment a component includes a housing having a recess, a first semiconductor chip for generating light of a first color and a second semiconductor chip for generating light of a second color which is different from the first color, wherein, during operation, a mixed radiation including at least the light of the first color is emitted along a main emission direction, wherein the first semiconductor chip is arranged in a first plane and the second semiconductor chip is arranged in a second plane in the recess, the planes following one another along the main emission direction, wherein active zones of the first and second semiconductor chips are arranged side by side to one another, and wherein at least one electrical connection surface of the first semiconductor chip forms a part of a mounting surface of the semiconductor component.

Abstract: A method for producing a component may include providing a composite including a semiconductor layer stack, a first connection layer and a second connection layer, wherein the first and second connection layers are arranged on the semiconductor layer stack, are assigned to different electrical polarities and are configured for the electrical contacting of the component to be produced, applying a molded body material on the composite for forming a molded body, such that in a plan view of the semiconductor layer stack the molded body covers the first connection layer and the second connection layer, forming a first cutout and a second cutout through the molded body for exposing the connection layers in places, and filling the first and second cutouts with an electrically conductive material for forming through contacts which are electrically conductively connected to the connection layers and extend through the molded body in the vertical direction.

Abstract: The invention relates to an optoelectronic component (100) comprising a semiconductor chip (1) for generating a primary beam in the blue spectral range, a conversion element (4) which is arranged in the beam path of the semiconductor chip (2) and is designed to generate a secondary beam from the primary beam, wherein the conversion element (4) comprises at least one first luminescent material (9) used as a conversion material, the first luminescent material (9) being (La1-xCax)3Si6(N1-yOy)11:Ce3+ with 0?x?1 and 0<y?1, wherein a total beam (G) emerging from the component (100) is white mixed light.

Abstract: A light-emitting diode includes an optoelectronic semiconductor chip that emits electromagnetic radiation through a radiation side along a main direction of emission running transversely to the radiation side during operation, the semiconductor chip is embedded in a solid body, wherein side surfaces and the radiation side are covered by the solid body in a form-fit manner, the solid body widens along the main direction of emission, a cover element is arranged downstream of the solid body in the main direction of emission and is applied directly onto the solid body, a side of a cover element facing away from the solid body is formed as a radiation exit surface of the light-emitting diode, and a first contact element is exposed in an unmounted and/or non-contacted state of the light-emitting diode.

Abstract: A method for manufacturing an optoelectronic component includes providing a growth substrate; applying a succession of semiconductor layers; structuring the succession of semiconductor layers; applying a sacrificial layer; depositing a metal layer; optionally planarizing using a dielectric material; forming a second terminal contact through the active region; applying a permanent support; and detaching the growth substrate and exposing the metal layer.

Abstract: An optoelectronic component includes a housing body comprising a mounting face and a leadframe embedded into the housing body. The leadframe comprises a first and a second leadframe section, wherein the leadframe sections each comprise a contact region and a terminal region. While the contact regions are exposed at the mounting face, the terminal regions project laterally from the housing body. The housing body is completely enclosed by a molding material, wherein the terminal regions are not enclosed by the molding material.

Abstract: A radiation-emitting organic-electronic device is specified. The radiation-emitting organic-electronic device includes a substrate, a first electrode arranged above the substrate, a light-emitting layer arranged above the first electrode, and a second electrode arranged above the light-emitting layer. The light-emitting layer includes a fluorescent compound of a specified formula A. The spacer comprises a linear molecular chain to which two substituents R and R? are terminally bonded, and at least one group E bonded to the linear molecular chain, wherein E denotes hydrogen and/or an organic radical. The linear molecular chain of the molecules of the fluorescent compound is aligned parallel to the plane of extent of the substrate.

Abstract: A component includes a semiconductor chip, an envelope and a reflector, wherein the semiconductor chip has a front side, a rear side facing away from the front side and side faces, and the semiconductor chip is electrically contactable at least partially via its rear side, the reflector completely encloses the semiconductor chip in lateral directions, has a first subregion and a second subregion directly adjoining the first subregion, and the first subregion is spatially spaced from the semiconductor chip and the second subregion directly adjoins the semiconductor chip, the envelope covers the front side of the semiconductor chip completely and the side surfaces of the semiconductor chip at least partially so that the envelope has an interface facing the semiconductor chip and reproducing a contour of the semiconductor chip in regions, and in the component is free of a lead frame enclosed by a molded body.