Abstract: An optoelectronic component includes an optoelectronic semiconductor chip that, during intended operation, generates primary radiation coupled out of the semiconductor chip via an emission side of the semiconductor chip; and a first conversion element on the emission side, wherein the first conversion element includes a first matrix material and first phosphor particles in the form of quantum dots, the first phosphor particles are distributed and embedded in the first matrix material, and the first matrix material is formed by a polysiloxane in which an atomic percentage of carbon is smaller than an atomic percentage of oxygen.

Abstract: The invention relates to a luminophore mixture which comprises at least one quantum dot luminophore and at least one functional material, the functional material is formed such that it scatters electromagnetic radiation and/or has a high density.

Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

Abstract: A method for producing a plurality of radiation emitting semiconductor devices and a radiation emitting semiconductor device are disclosed. In an embodiment a method include providing an auxiliary carrier, applying a plurality of radiation-emitting semiconductor chips to the auxiliary carrier with front sides so that rear sides of the semiconductor chips are freely accessible, wherein each rear side of the respective semiconductor chip has at least one electrical contact, applying spacers to the auxiliary carrier so that the spacers directly adjoin side surfaces of the semiconductor chips and applying a casting compound between the semiconductor chips by a screen printing process such that a semiconductor chip assembly is formed, wherein a screen for the screen printing process has a plurality of cover elements, and wherein each cover element covers at least one electrical contact.

Abstract: A lighting device includes a pixel array of light-emitting pixels arranged next to one another. The pixel array includes light-emitting pixels with different pixel shapes.

Abstract: An optoelectronic component may include a semiconductor chip configured to emit radiation and a reflection element disposed in the beam path of the semiconductor chip where the reflection element is configured to reflect radiation. The reflection element may include a matrix material having diffuser particles and filler particles embedded therein. The diffuser particles are different from the filler particles. The filler particles may include a matrix having scatter particles embedded therein and/or a ceramic comprising the scatter particles in sintered form.

Abstract: A sensor may include a light source, a light detector, and a housing. The housing may have a first upper side and extend from the first upper side, a first cavity and a second cavity. The light detector is arranged in the first cavity. The light source is arranged in the second cavity. A strut may be arranged between the first cavity and the second cavity and is made from a material that absorbs or reflects light. A first cover may be mounted above the first cavity and comprises a deflection region and a plane of incidence. The deflection region is designed such that 80% of the light which is incident in the deflection region on the plane of incidence of the first cover from a predetermined direction and which is incident on the light detector, is directed away from the light detector based on an optical element.

Abstract: An optoelectronic component may include a radiation-emitting semiconductor chip configured to emit electromagnetic radiation and a phosphor mixture. The excitation spectrum may have a peak wavelength ranging from 435 nm to 460 nm. The phosphor mixture may have three phosphors configured to emit electromagnetic radiation in different spectral ranges.

Abstract: A component may include a semiconductor body and a converter layer. The converter layer may have phosphor particles and an electrically conductive matrix material where the phosphor particles are embedded in the matrix material. The converter layer may be arranged on the semiconductor body and may have a plurality of sublayers that are spatially set apart from one another and can be electrically contacted individually. The semiconductor body may have an active zone for producing electromagnetic radiation where the sublayers of the converter layer are designed for local electrical contacting of the active zone.

Abstract: In one embodiment, an apparatus may include a light source. The apparatus also includes a measuring laser, such as a semiconductor laser. The measuring laser is configured to generate pulses with a maximum pulse duration of 10 ns. A wavelength of maximum intensity of the measuring laser radiation generated by the measuring laser ranges from 400 nm to 485 nm inclusive. The measuring laser radiation is used for distance measurement by means of LIDAR, for example in a car headlight.

Abstract: An optoelectronic sensor module and a method for producing an optoelectronic sensor module are disclosed. In an embodiment an optoelectronic sensor module includes a first semiconductor transmitter chip configured to emit radiation of a first wavelength, a second semiconductor transmitter chip configured to emit radiation of a second wavelength different from the first wavelength, a semiconductor detector chip configured to detect the radiation of the first and second wavelengths, and a first potting body being opaque to the radiation of the first and the second wavelength, wherein the first potting body directly covers side surfaces of the chips and mechanically connects the chips located in a common plane to one another, wherein a distance between the chips is less than or equal to twice an average diagonal length of the chips, and wherein the sensor module is adapted to rest against a body part to be examined.

Abstract: In an embodiment a measuring unit includes a light emitting LED component including a housing occupying a housing surface G and an LED chip located within the housing, the LED chip including a light emitting light surface L and being configured to emit light; a photodetector configured to detect reflected light reflected from a measured object originating from the LED component and output a measurement signal dependent on a detection of the reflected light; and an integrated circuit configured to evaluate the measurement signal, wherein the LED component, the photodetector, and the integrated circuit are combined into an integrated unit; and a conversion layer disposed in the housing and located above the LED chip, the conversion layer configured to convert the light into multiband light, wherein a ratio L/G of is greater than or equal to 0.8, and wherein the measuring unit is configured to optically measure at least one property of the measured object.

Abstract: A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: An optoelectronic arrangement is specified, including a moulded body having a base surface, a first pixel group with a multiplicity of pixels assigned thereto, each having a first semiconductor region, a second semiconductor region and an active region, a multiplicity of separating structures arranged between the pixels, and at least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the base surface, wherein the pixels of the first pixel group are arranged alongside one another at the top surface, the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are electrically insulated from one another by means of the separating structures, a first contact structure is assigned one-to-one to the first pixel group, and the first semiconductor regions of the pixels of the first pixel group are electrically conductively connected to one another by means of the first contact plane and are electr

Abstract: An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.

Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.

Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.

Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed.

Abstract: An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer.