Abstract: A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body includes a semiconductor layer facing away from the carrier, a further semiconductor layer facing the carrier and an optically active layer located therebetween, the carrier has a metallic carrier layer that is contiguous and mechanically stabilizes the component, the carrier includes a mirror layer disposed between the semiconductor body and the metallic carrier layer, the carrier has a compensating layer directly adjacent to the metallic carrier layer and is configured to compensate for internal mechanical strains in the component, and the compensating layer is arranged between the semiconductor body and the metallic carrier layer.

Abstract: In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.

Abstract: A display includes a plurality of pixels. The pixels include at least one emitter unit. The emitter units each include a primary emitter and a secondary emitter for generating light of the same color. The secondary emitter is associated with the primary emitter of the corresponding emitter unit. The primary emitters and the secondary emitters are based on at least one semiconductor material. The emitter units each include a correction circuit. The correction circuits are each configured to be able to switch the generation of light from the primary emitter to the associated secondary emitter in case of a defect of the associated primary emitter.

Abstract: A radiation-emitting device including a radiation source, an emission surface through which radiation from the radiation source passes during operation, wherein the emission surface includes a plurality of pixels, each pixel includes a plurality of subpixels, in plan view of the emission surface, each pixel forms a partial area of the emission surface and each subpixel forms a portion of such partial area, for each pixel, at least first subpixels are operable individually and independently of one another, and all subpixels of a pixel together make up at most 50% of the area of the pixel so that in simultaneous operation of all subpixels radiation is emitted via at most 50% of the area of the pixel.

Abstract: An optoelectronic device is specified, with a radiation-emitting semiconductor chip configured to generate electromagnetic radiation, and an active element configured to change a physical state, wherein the active element is embedded in a component of the component, and the physical change of state comprises the following: temperature change, sound generation, mechanical motion.

Abstract: A method of producing optical components includes providing an initial carrier including cutouts; carrying out a molding process to form transparent optical molded parts arranged in the cutouts of the initial carrier, wherein a molding compound is introduced into the cutouts of the initial carrier and the molding compound is molded and cured; and singulating the initial carrier including the optical molded parts so that separate optical components are formed that respectively include a carrier produced from the initial carrier and including a cutout, and an optical molded part arranged in the cutout.

Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

Abstract: A method for producing a contact structure for an optoelectronic semiconductor component is given, comprising the steps: a) providing a growth substrate having a semiconductor body which is grown thereon and comprises a first and a second region, and an active region, b) creating at least one first recess which, starting from the second region, extends completely through the active region into the first region and does not completely penetrate the first region, c) inserting a first electrically conductive contact material into the first recess, d) fixing the semiconductor body with the side facing away from the growth substrate on a support substrate, and detaching the growth substrate from the semiconductor body, e) creating at least one second recess extending from the first region to the first recess so that the first recess and the second recess form a feedthrough through the semiconductor body, f) introducing a second electrically conductive contact material into the second recess in such a way that t

Abstract: A component assembly includes an intermediate carrier, a plurality of components and a plurality of anchoring elements. The components have at least two electrical devices and an insulating layer. At least one of the electrical devices is an optoelectronic semiconductor chip. The insulating layer is between the electrical devices of a same component. The at least two electrical devices of the same component are arranged next to one another and enclosed laterally by the insulating layer. The at least two electrical devices and the insulating layer of the same component are integral parts of a self-supporting and mechanically stable unit. The self-supporting and mechanically stable unit and the anchoring elements fix the positions of the components on the intermediate carrier. The components that are self-supporting and mechanically stable units are detachable from the intermediate carrier, and the anchoring elements release the components under mechanical load when the latter are removed.

Abstract: A light-emitting device (100) is specified, which has a housing (1) with a mounting surface (12) and a housing recess (13), a semiconductor laser diode (2) being arranged in the housing recess, which is intended and embodied to emit laser light (20) in a direction parallel to the mounting surface (12) during operation, an optical element (4) being arranged downstream of the semiconductor laser diode in the beam path of the laser light, the semiconductor laser diode being mounted in the housing in such a way that the laser light has a maximum divergence in a plane parallel to the mounting surface, the optical element having a light-incoupling surface (41), exactly one reflector surface (42) and a light-outcoupling surface (43), the optical element being a one-piece housing cover which completely covers the housing recess in which the semiconductor laser diode is arranged, and the light-outcoupling surface being part of an outer surface of the optical element opposite the mounting surface.

Abstract: An assembly is disclosed. In an embodiment an assembly includes a light source configured to illuminate a field of view, a control circuit configured to operate the light source and a camera configured to record a scene in the field of view, wherein the light source comprises at least one semiconductor component having at least one semiconductor chip, wherein the semiconductor chip has an semiconductor layer sequence with an active region, wherein the semiconductor chip comprises the plurality of pixels, wherein the plurality of pixels are configured to generate radiation of the light source, wherein the control circuit has a memory configured to store operational data of the light source, wherein the control circuit is configured to operate the pixels on basis of the operational data, and wherein the arrangement is configured to perform an adaptation of at least a part of the operational data in the memory during operation of the arrangement.

Abstract: An optoelectronic semiconductor component may have a semiconductor body comprising a first region of an n-type conductivity, a second region of a p-type conductivity, an active region capable of generating electromagnetic radiation, a marker layer, a plurality of emission regions and a plurality of recesses. The active region is disposed between the first region and the second region in a plane parallel to the main extension plane of the semiconductor body. The recesses delimit the emission regions in lateral direction. Starting from the side of the first region facing away from the active region, the recesses extend transversely to the main plane of the semiconductor body in the direction of the second region and adjoin the marker layer or penetrate the marker layer completely. The recesses are formed only in the first region or the recesses extend into the second region and completely penetrate the active region.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one optoelectronic semiconductor chip configured to emit radiation and an encapsulation around the semiconductor chip. The encapsulation is a polysiloxane. A barrier layer can be used for protection against harmful gases, the barrier layer being arranged on the encapsulation. The barrier layer is a plasma-polymerized siloxane layer.

Abstract: A light-emitting semiconductor device (100) comprising a semiconductor layer sequence (1) based on a phosphide and/or arsenide compound semiconductor material system is specified, wherein—the semiconductor layer sequence (1) comprises a light-emitting semiconductor layer (10), which is embodied to emit light during operation of the semiconductor device (100), between a first cladding layer (11) and a second cladding layer (12), and at least a first semiconductor protection layer (13), the first semiconductor protection layer (13) is arranged inside the first cladding layer (11), wherein the first cladding layer is formed as an outer layer, or the first semiconductor protection layer is arranged as an outer layer directly on the first cladding layer (11) on a side remote from the light-emitting semiconductor layer (10), and the first semiconductor protection layer (13) has a lower aluminum content than the first cladding layer.

Abstract: Light-emitting component includes a light source and a dimming element arranged downstream of the light source in a radiation direction. The dimming element includes a dimming layer. The light source includes at least one emitter which is configured to emit light. A brightness of a light emitted by the light-emitting component is adjustable. The brightness is partially adjustable by way of a pulse width modulated and/or amplitude modulated operating signal for the emitter, and the brightness is partially adjustable by way of partial absorption and/or reflection of the light emitted by the emitter in the dimming element. A dimming capability of the dimming layer increases along an extension direction transverse to the radiation direction. The dimming layer is displaceable along the extension direction relative to the light source. A degree of absorption and/or reflection of light emitted by the emitter is variably adjustable.

Abstract: An optoelectronic semiconductor component may include a housing having a recess, and a chip carrier which is a part of the housing. The chip carrier may have a first fastening side and an upper side. The optoelectronic semiconductor chip may be mounted on the upper side in the recess. First electrical contact pads for external electrical contacting may be located on the first fastening side. Furthermore, second electrical contact pads for external electrical contacting may be located on a second fastening side, opposite to the first fastening side, of the housing. First and second electrical contact pads electrically assigned to one another may be electrically short-circuited so that the semiconductor component can be electrically contacted by the first or by the second fastening side.

Abstract: A semiconductor light source configured for a spectrometer may include at least one multipixel chip, at least one color setting component disposed optically downstream of at least one of emission region, and a drive unit. The color setting component may be configured for altering a spectral emission behavior of assigned emission regions. The drive unit may be configured to operate a plurality of mutually independently drivable emission regions successively, such that during operation thereof at least three spectrally narrowband individual spectra are emitted successively by the plurality of mutually independently drivable emission regions together with the associated color setting component from which individual spectra a total spectrum emitted by the semiconductor light source is constituted.

Abstract: A lighting device and a lighting system are disclosed. In an embodiment, a lighting device includes at least one optoelectronic semiconductor chip, two contacts configured to couple the lighting device to a DC voltage and a driver circuit interconnected in series with the at least one semiconductor chip in a string, wherein the driver circuit comprises a monolithic, unhoused controller, wherein the driver circuit is configured to adjust a current for operating the at least one semiconductor chip, and wherein the string extends between the two contacts in an electrically coupling way.

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 ?m.

Abstract: A light fiber and an illuminating device are disclosed. In an embodiment a light fiber includes a cladding and at least two cores configured to conduct electromagnetic radiation, wherein each core comprises an incoupling surface at one end of the light fiber, wherein the incoupling surfaces of different cores are not contiguous, wherein each of the cladding and/or the cores includes at least one outcoupling zone configured to outcouple the electromagnetic radiation from the cores, wherein the light fiber is configured to emit at least a majority of the electromagnetic radiation in a region of outcoupling zone transverse to a main extension direction of the light fiber, wherein the cores are configured to guide primary radiation, and wherein the outcoupling zone is configured to mix the primary radiation so that mixed light is emitted from the light fiber.