Abstract: An optoelectronic arrangement is specified, comprising a moulded body having a base surface, a first pixel group with a multiplicity of pixels assigned thereto, each having a first semiconductor region, a second semiconductor region and an active region, a multiplicity of separating structures arranged between the pixels, and at least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the base surface, wherein the pixels of the first pixel group are arranged alongside one another at the top surface, the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are electrically insulated from one another by means of the separating structures, a first contact structure is assigned one-to-one to the first pixel group, and the first semiconductor regions of the pixels of the first pixel group are electrically conductively connected to one another by means of the first contact plane and are elect

Abstract: A sensor including at least one sensor chip for detecting a radiation; and an electronics unit with a digital, bidirectional connection line and with a standby control circuit, as well as with an active status line; wherein the connection line is configured to be connected to an external activation unit; and the standby control circuit is configured to determine whether the connection line is externally addressed by the activation unit when the connection line is not addressed by the active status line, and precisely then to place the sensor in a standby mode.

Abstract: In an embodiment a composite semiconductor component includes a carrier substrate having a plurality of projecting elements projecting from a first main surface of the carrier substrate, an electrically conductive material electrically conductively connected to a contact region of the carrier substrate and located on at least one of the projecting elements, some of the projecting elements not being covered with the electrically conductive material and a semiconductor chip arranged on the carrier substrate and having at a first surface at least one contact pad electrically connected to the electrically conductive material on at least one element, wherein, at a position at which the contact pad and the electrically conductive material on the projecting element are in each case in contact with one another, the contact pad has a larger lateral extent than the projecting element in each case.

Abstract: An irradiation unit is disclosed that includes a pump radiation source for emitting pump radiation in the form of a beam, a conversion element for at least partially converting the pump radiation into conversion radiation, and a support on which the conversion element is situated. The support accommodates a through-hole through which the beam including the pump radiation is incident on an incident surface of the conversion element, the though-hole being laterally delimited by an inner wall face of the support, at least one portion of the face tapering in the direction of the incident surface. During operation, the pump radiation conducted in the beam is at least intermittently at least in part, incident on the inner wall face of the support and is reflected thereby onto the incident surface.

Abstract: In an embodiment a method for producing a semiconductor component comprising at least one semiconductor chip mounted on a surface, wherein the semiconductor chip is fixed on the surface by applying a solder compound to an assembling surface of the semiconductor chip, applying a metallic adhesive layer to a side of the solder compound facing away from the assembling surface, preheating the surface to a first temperature T1, bringing the metallic adhesive layer into mechanical contact in a solid state with the preheated surface, the metallic adhesive layer at least partially melting while it is brought into mechanical contact with the preheated surface, and subsequently cooling the surface to room temperature, the semiconductor chip being at least partially metallurgically bonded to the surface, and wherein the semiconductor chip is subsequently soldered to the surface to form a resulting solder connection.

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating radiation with a wavelength of maximum intensity L. A mirror comprises a cover layer. The cover layer is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer is followed in a direction away from the semiconductor layer sequence by between inclusive two and inclusive ten intermediate layers of the mirror. The intermediate layers alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers is not equal to L/4. The intermediate layers are followed in the direction away from the semiconductor layer sequence by at least one metal layer of the mirror as a reflection layer.

Abstract: A radiation source for emitting terahertz radiation (6) is specified, comprising at least two laser light sources emitting laser radiation (11, 12) of different frequencies, and a photomixer (5) comprising a photoconductive semiconductor material (51) and an antenna structure (52), the photomixer (5) being configured to emit the laser radiation (11, 12) of the laser light sources (1, 2) and emitting terahertz radiation (6) with at least one beat frequency of the laser light sources, and wherein the at least two laser light sources are surface-emitting semiconductor lasers (1, 2) which are arranged in a one-dimensional or two-dimensional array on a common carrier (10).

Abstract: The invention relates to a method, an arrangement and an array, in which a structured contact layer and an elastic carrier layer arranged on a first side of the structured contact layer and connected to the structure contact layer by means of a bonded connection is produced, and in which at least one optoelectronic semiconductor component is arranged on the structured contact layer, on a second side of the structured contact layer, opposing the first side, and is electrically and mechanically connected to the structured contact layer, an elastic conversion layer in an irradiation region being applied to the structured contact layer and the elastic carrier layer in such a way that at least the optoelectronic semiconductor component is embedded in the conversion layer, at least in sections, and a connection region of the structure contact layer remains uncovered.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Abstract: A method for producing a composite component (100) and a composite component (100) comprising a plurality of components (10), a removable sacrificial layer (4), an anchoring structure (3) and a common intermediate carrier (90) are specified. The components each have a semiconductor body (2) comprising an active zone (23), are configured to generate coherent electromagnetic radiation and are arranged on the common intermediate carrier. The sacrificial layer is arranged in a vertical direction between the intermediate carrier and the components. The anchoring structure comprises a plurality of anchoring elements (3A, 3B), wherein the anchoring structure and the sacrificial layer provide a mechanical connection between the intermediate carrier and the components.

Abstract: A method of producing a layer stack includes a) forming a first layer having a first material composition on a substrate, b) performing intermediate processing of the substrate with the first layer, c) forming an additional layer having a second material composition, the first material composition and the second material composition differing from each other by at most 10% by weight, at least locally directly on the first layer and d) applying a second layer at least in places directly onto the additional layer.

Abstract: In an embodiment an arrangement includes a plurality of pixels, wherein each pixel includes at least two subpixels of each color, wherein each color is defined by a predefined target color location, wherein each subpixel comprises an optoelectronic component defined by a color location, wherein the color locations of the optoelectronic components of each color is chosen such that during operation of the optoelectronic components the predefined target color location is met for each color, wherein the optoelectronic components for each color are of identical design, and a controller configured to commonly control the optoelectronic components of a color.

Abstract: An optoelectronic semiconductor chip including a semiconductor layer sequence containing a phosphide compound semiconductor material, wherein the semiconductor layer sequence includes a p-type semiconductor region, an n-type semiconductor region and an active layer disposed between the p-type semiconductor region and the n-type semiconductor region, a current spreading layer including a transparent conductive oxide adjoining the p-type semiconductor region, and a metallic p-connection layer at least regionally adjoining the current spreading layer, wherein the p-type semiconductor region includes a p-contact layer adjoining the current spreading layer, the p-contact layer contains GaP doped with C, a C dopant concentration in the p-contact layer is at least 5*1019 cm?3, and the p-contact layer is less than 100 nm thick.

Abstract: The invention relates to a method for controlling a current to a light-emitting diode in order for it to emit a desired light flux, wherein the current is determined depending on a time period during which the light-emitting diode is supplied with current, in order to generate the desired light flux for said light-emitting diode.

Abstract: The invention relates to an optoelectronic component, which, in at least one embodiment, comprises an optoelectronic semiconductor chip having an emission side and a conversion element on the emission side. The conversion element is configured for conversion of a primary beam emitted by the semiconductor chip in operation as intended. The conversion element is divided into at least one first layer and one second layer. The first layer is arranged between the second layer and the emission side. The first layer comprises a first matrix material having fluorescent particles introduced therein. The second layer comprises a second matrix material having fluorescent particles introduced therein. The first matrix material of the first layer has a higher index of refraction than the second matrix material of the second layer.

Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing an optoelectronic semiconductor chip with a radiation passage surface on a connection carrier, applying a deformable spacer to the radiation passage surface of the semiconductor chip, inserting the connection carrier with the semiconductor chip into a cavity of a tool, deforming, by the tool, the deformable spacer and encapsulating the semiconductor chip with a casting compound.

Abstract: A detection assembly and a method for producing a detection assemblies are disclosed. In an embodiment a detection arrangement includes an emitter configured to generate radiation having a peak wavelength in an infrared spectral range, a detector configured to receive the radiation, a mounting surface comprising at least a first contact surface and a second contact surface for external electrical connection of the detection arrangement, a form body adjoining the emitter and the detector at least in places and deflection optics, on which the radiation impinges during operation of the detection arrangement so that an optical path is formed between the emitter and the detector by the deflection optics, wherein the deflection optics include a scattering body into which the radiation enters during the operation through a surface of the scattering body facing the emitter.

Abstract: In one embodiment, the optoelectronic component comprises a first emission zone, which emits electromagnetic radiation during operation. Furthermore, the component comprises an optical waveguide with an entrance side facing the first emission zone, a distribution element and with output coupling structures on a side of the distribution element facing away from the first emission zone. The optical waveguide is a simply connected solid body. In a top view of the side of the optical waveguide facing away from the first emission zone, the distribution element completely covers the first emission zone. The output coupling structures are individual, spaced-apart elevations, each of which extends away from the distribution element and comprises an output coupling surface at an end facing away from the distribution element. A structure that is nontransmissive to the radiation of the first emission zone is arranged on the optical waveguide in the region between the output coupling structures.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip that generates primary radiation during intended operation of the semiconductor chip, which primary radiation is coupled out via an emission side of the semiconductor chip, an optical element on the emission side and including a plurality of transmission fields arranged laterally side by side, wherein each transmission field is individually and independently electrically controllable, the transmission fields each include an electrochromic material, the transmission fields are such that, by electrically driving a transmission field, the transmittance of the electrochromic material for a radiation coming from the direction of the semiconductor chip during operation is changed and transmittance of the optical element in the region of the respective transmission field is changed for the respective radiation.