Abstract: The invention proposes an arrangement of luminescent materials for excitation by means of a radiation source and involving the use of a luminescent material having a Ce-activated garnet structure A3B5O12, in which the first component A contains at least one element from the group consisting of Y, Lu, Sc, La, Gd, Sm and Tb and the second component B represents at least one of the elements Al, Ga and In, and a plurality of the luminescent materials are mixed together.

Abstract: An encapsulation for an electrical device is disclosed. The encapsulation comprises plastic substrates which are laminated onto the surface of the electrical device. The use of laminated plastics is particularly useful for flexible electrical devices such as organic LEDs.

Abstract: A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A is terbium or terbium together with at least one of the elements Y, Gd, La and/or Lu. In a preferred embodiment, a phosphor having a garnet of structure (Tb1?x?yRExCEy)3(Al,Ga)5O12, where RE=Y, Gd, La and/or Lu; 0?x?0.5?y; 0<y<0.1 is used.

Abstract: A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A is terbium or terbium together with at least one of the elements Y, Gd, La and/or Lu. In a preferred embodiment, a phosphor having a garnet of structure (Tb1-x-yRExCey)3(Al,Ga)5O12, where RE=Y, Gd, La and/or Lu; 0?x?0.5-y; 0<y<0.1 is used.

Abstract: An encapsulation for an electrical device is disclosed. The encapsulation comprises plastic substrates which are laminated onto the surface of the electrical device. The use of laminated plastics is particularly useful for flexible electrical devices such as organic LEDs.

Abstract: The present invention relates to a method for the production of semiconductor components. This method comprises the steps of applying masking layers and components on epitaxial semiconductor substrates within the epitaxy reactor without removal of the substrate from the reactor. The masking layers may be HF soluble such that a gas etchant may be introduced within the reactor so as to etch a select number and portion of masking layers. This method may be used for production of lateral integrated components on a substrate wherein the components may be of the same or different type. Such types include electronic and optoelectronic components. Numerous masking layers may be applied, each defining particular windows intended to receive each of the various components. In the reactor, the masks may be selectively removed, then the components grown in the newly exposed windows.

Abstract: A method for the production of semiconductor components which includes applying masking layers and components on epitaxial semiconductor substrates within the epitaxy reactor without removal of the substrate from the reactor. At least one of the masking layers is HF soluble such that a gas etchant may be introduced within the reactor so as to etch a select number and portion of masking layers. This method may be used for production of lateral integrated components on a substrate wherein the components may be of the same or different type. Such types include electronic and optoelectronic components. Numerous masking layers may be applied, each defining particular windows intended to receive each of the various components. In the reactor, the masks may be selectively removed, then the components grown in the newly exposed windows.

Abstract: A method for producing semiconductor laser components in which, a number of chip mounting areas are formed on a cooling element having an electrically insulating carrier that is in the form of a plate. A number of semiconductor laser chips are then fit to the cooling element, with one semiconductor laser chip being arranged on each chip mounting area. Finally, the cooling element, with the semiconductor bodies fit on it, is subdivided into a number of semiconductor laser components.

Abstract: The light source has an LED, preferably produced for the surface-mounting technique, embedded in a transparent material filling. A converter substance is integrated in the filling for the at least partial wavelength conversion of the light emitted by the LED. A lens is glued onto the transparent material filling. The material filling has a convex surface and the lens has a concave underside entering into a form fit with the convex surface of the material filling.

Abstract: The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element converts a portion of the radiation into radiation of a longer wavelength. This makes it possible to produce light-emitting diodes which radiate polychromatic light, in particular white light, with only a single light-emitting semiconductor body. A particularly preferred luminescence conversion dye is YAG:Ce.

Abstract: A substrate with banks having end channels is provided to advantageously allow excess fluid collecting on one part of the substrate to flow to another part of the substrate. An excess of fluid collecting in a particular area of the substrate may flow to an area of the substrate where it would not interfere with the manufacturing process. The end channels may be modified with wave breakers that act as buffers to redirect excess fluid and/or with capillary-force homogeneity enhancers that pull excess fluid away from other parts of the substrate. The end channels may also contain line-end reservoirs that provide additional room for excess fluid to collect.

Abstract: A method for producing a surface mounting optoelectronic component comprises the following steps: readying a base body with the optoelectronic transmitter and/or receiver arranged in a recess of the base body, filling the recess of the base body with a transparent, curable casting compound, and placing the optical device onto the base body, whereby the optical device comes into contact with the casting compound.

Abstract: The present invention relates to an optical encoder for measuring the speed and direction of a moving raster. The raster may be moving linearly or angularly and may further be connected to a moving element, such as a spinning shaft, of which speed and orientation measurement Is sought. The raster may comprise a slit plate or the like and include many formations in sequence. The formations may be successively opaque and transparent to light. The raster modulates light from a light source and the modulated light is detected by at least one set of three photodetectors. Output of the photodetectors is then used to generate a reference signal to which individual outputs are compared. The results of the comparisons are indicative of the speed and direction of the raster and moving element to which the raster is attached.

Abstract: A method of fabricating a device, including mechanically patterning a device layer using a stamp containing a desired pattern. The device layer is formed on a plastic or polymeric substrate. The stamp is pressed against the substrate under a load which patterns the device layer without cracking the device layer in the non-patterned areas.

Abstract: The light source has an LED, preferably produced for the surface-mounting technique, embedded in a transparent material filling. A converter substance is integrated in the filling for the at least partial wavelength conversion of the light emitted by the LED. A lens is glued onto the transparent material filling. The material filling has a convex surface and the lens has a concave underside entering into a form fit with the convex surface of the material filling.

Abstract: The light source has an LED, preferably produced for the surface-mounting technique, embedded in a transparent material filling. A converter substance is integrated in the filling for the at least partial wavelength conversion of the light emitted by the LED. A lens is glued onto the transparent material filling. The material filling has a convex surface and the lens has a concave underside entering into a form fit with the convex surface of the material filling.

Abstract: The organic electroluminescent component of the invention has a transparent bottom electrode situated on a substrate; a top electrode composed of a metal that is inert to oxygen and moisture; at least one organic function layer arranged between the bottom electrode and the top electrode; and a charge carrier injection layer containing a complex metal salt of the composition (Me1)(Me2) Fm+n, whereby the following applies: m and n are respectively a whole number corresponding to the valence of the metals Me1 and Me2 (the metal Me1 thereby has the valence m, the metal Me2 the valence n), Me1 is selected from a group consisting of Li, Na, K, Mg and Ca, Me2 is selected from a group consisting of Mg, Al, Ca, Zn, Ag, Sb, Ba, Sm and Yb, with the prescription: Me1≠Me2.

Abstract: A white light source is described and has a UV-/blue-emitting semiconductor LED and an embedding compound provided with phosphor particles. The LED is provided with a plurality of light-emitting zones that are applied within a layer structure on a common substrate. An emission maxima of the light-emitting zones are energetically detuned relative to one another by different choice of the composition or of the layer thickness of the semiconductor material.

Abstract: An ultraviolet light radiation photodetector includes a quartz lens, a UV transmission filter, a silicon photodiode, and a scintillator layer. After passing through the quartz lens and the UV transmission filter, the UV light to be detected is converted in the scintillator layer, preferably applied to the surface on a light-exiting side of the UV transmission filter, into light radiation of a greater wavelength, for which the silicon photodiode exhibits a greater sensitivity. If desired, an additional edge filter can be used to improve the configuration's drop in sensitivity between 350 and 400 nm.

Abstract: The present invention relates to a method for the production of semiconductor components. This method comprises the steps applying masking layers and components on epitaxial semiconductor substrates within the epitaxy reactor without removal of the substrate from the reactor. The masking layers may be HF soluble such that a gas etchant may be introduced within the reactor so as to etch a select number and portion of masking layers. This method may be used for production of lateral integrated components on a substrate wherein the components may be of the same or different type. Such types include electronic and optoelectronic components. Numerous masking layers may be applied, each defining particular windows intended to receive each of the various components. In the reactor, the masks may be selectively removed, then the components grown in the newly exposed windows.