Abstract: An electromagnetic radiation-emitting assembly is disclosed. In an embodiment the assembly includes an electromagnetic radiation-emitting component arranged above a carrier, the electromagnetic radiation-emitting component including a first side facing away from the carrier, a second side facing the carrier, and at least one side wall connecting the first side and the second side of the electromagnetic radiation-emitting component to one another, an encapsulating body, into which the electromagnetic radiation-emitting component is embedded, which adjoins the first side and the side wall of the electromagnetic radiation-emitting component, a potting material at least partly surrounding the encapsulating body and a reflector body at least partly surrounding the potting material.

Abstract: A method for operating an optoelectronic assembly which includes at least one component string having at least one section, wherein the section includes at least one light emitting diode element, is provided. According to the method, the section is supplied with electrical energy, the supply of the section with electrical energy is interrupted, an input of the section is electrically coupled to an output of the section, wherein the section is short-circuited via the electrical coupling of the input to the output, a maximum value of an electrical discharge current which flows via the section is detected, and the fact of whether the section of the component string has a short circuit is determined depending on the detected maximum value.

Abstract: Various embodiment may relate to a luminaire, including at least one light source, in particular a semiconductor light source, for emitting a primary light beam onto at least one spaced-apart luminescent body, wherein the luminescent body includes at least one hole and a direct light component of the respective primary light beam can be radiated through the at least one hole.

Abstract: Optimized routing in localized dense networks is provided. A packet is received at a first network device in a network. An optimal route for the packet to a neighbor network device in the network is determined using a Source Routing Table (SRT), wherein the SRT includes an optimized routing table and a standard routing table, and wherein the optimized routing table comprises a list of neighbor network devices that the first network device can route to directly and wherein the standard routing table comprises a ZigBee source routing table. The packet is routed using the optimal route.

Abstract: A method of producing an optoelectronic component including a conversion element includes: A) providing a layer sequence having an active layer, wherein the active layer is configured to emit electromagnetic primary radiation; B) providing quantum dots, wherein the quantum dots are functionalized with an organic group and/or the quantum dots dissolved or dispersed in a first solvent and/or are present as a powder; C*) providing a mixture including a precursor of an inorganic matrix material and of a second solvent; D) mixing the mixture obtained in step C*) with the quantum dots of step B); E) drying the mixture; and F) sintering the mixture to form the conversion element.

Abstract: The invention relates to an optoelectronic semiconductor component (100) comprising the following —an optoelectronic semiconductor chip (2), the lateral surfaces (2c) and lower face (2b) of which are at least partly covered by a molded body (3) that is electrically conductive and is designed to electrically contact the optoelectronic semiconductor chip (2), —at least one via (6) which comprises an electrically conductive material and is laterally spaced from the semiconductor chip (2), said via (6) completely passing through the molded body (3), wherein the via (6) extends from an upper face (3a) of the molded body (3) to a lower face (3b) of the molded body (3), —at least one insulating element (9) which is arranged within the molded body (3) between the via (6) and the semiconductor chip (2) and extends from the upper face (3a) of the molded body (3) to the lower face (3b) of the molded body (3), and —an electrically conductive connection (7) which is connected to the semiconductor chip (2) and the via (6)

Abstract: A light module includes an excitation radiation source, first phosphor, a beam splitting apparatus configured to generate a first and a second partial optical path, with one of the two partial optical paths comprising the first phosphor and the other one including the excitation radiation, a combining apparatus to merge the first and second paths, and an exit where the radiation from the merged paths can be made available. The apparatus includes a first rotatably mounted filter wheel is arranged between the source and the first phosphor and has a first transmission region and a first reflection region for the excitation radiation, and a second rotatably mounted filter wheel, which has at least one second transmission region and a second reflection region for the excitation radiation.

Abstract: A method for producing a plurality of conversion elements (10) is specified, comprising providing a carrier substrate (1), introducing a converter material (3) into a matrix material (2), applying the matrix material (2) with the converter material (3) to individual regions (8) of the carrier substrate (1) in a non-continuous pattern, applying a barrier substrate (5) to the matrix material (2) and to the carrier substrate (1), and singulating the carrier substrate (1) with the matrix material (2) and the barrier substrate (5) into a plurality of conversion elements (10) along singulation lines (V), wherein the conversion elements (10) in each case comprise at least one of the regions (8) of the matrix material (2).

Abstract: A semiconductor structure has a nano-crystalline core comprising a first semiconductor material and a nano-crystalline shell comprising a second, different semiconductor material at least partially surrounding the nano-crystalline core. Either one, but not both, of the core and shell are based on cadmium-containing semiconductor materials.

Abstract: An organic optoelectronic component includes an organic light-emitting element and an organic protective diode element. The organic light-emitting element includes an organic functional layer stack having at least one organic light-emitting layer between two electrodes. The organic protective diode element includes an organic functional layer stack having an organic pn-junction between two electrodes and is arranged on a shared substrate in laterally adjacent area regions with the organic light-emitting element.

Abstract: In one embodiment, the organic light emitting diode (1) comprises a carrier substrate (2) having an organic layer stack for producing light. The organic light emitting diode (1) is electrically connectable via at least one connector (3) as intended. The connector (3) has two main sides (32) situated opposite one another that each have at least two electrical contact pads (31) of the connector (3) located on them. As seen in a cross section perpendicular to the main sides (32) and perpendicular to an insertion direction (x) of the connector (3), the contact pads (31) are arranged both geometrically and with electrical point symmetry, so that incorrect-polarity protection against incorrect electrical connection of the organic light emitting diode (1) is attained.

Abstract: Techniques are disclosed to operate a luminaire so as to reduce glare experience by an occupant within an area illuminated by a luminaire. The luminaire includes individually operated light sources. An image capture device is deployed for capturing an image of an area. Operatively coupled to the luminaire and the image capture device is a computing system. The computing is configured to reduce glare by adjusting a light intensity of a light source of the luminaire. These adjustments are based on, for example, a position of an occupant within the area and a direction in which the occupant is facing relative to the luminaire, and/or a position of an indirect glare source.

Abstract: Disclosed herein are wavelength converting compositions, wavelength converters and light sources including the same. The wavelength converting compositions include at least one poly(silphenylene-siloxane) gel matrix that contains at least one wavelength conversion material, such as one or more phosphors in powdered and/or particulate form. Methods of making such compositions and converters are also disclosed. Wavelength converted light sources such as wavelength converted light emitting diode packages are also disclosed. The poly(silphenylene-siloxane) gel matrix exhibits relatively high thermal stability, as well as desirable optical properties.

Abstract: An illumination apparatus includes a semiconductor laser device to generate a plurality of laser beams, a light wavelength conversion element configured to convert at least a portion of the light of the laser beams into light having a different wavelength, and an optical unit configured to direct the laser beams onto a surface of the light wavelength conversion element. The optical unit includes a mirror element able to be panned about an axis and is configured to guide the laser beams over at least one surface section of the surface of the at least one light wavelength conversion element. The optical unit includes a structure configured to adjust a divergence or expansion of the laser beams along at least one of a slow axis or a fast axis of the laser beams on the surface section of the surface of the at least one light wavelength conversion element.

Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

Abstract: An active damping circuit is disclosed, which includes a peak current limiter, a drain source voltage limiter, a turn-on driver, a resistor shunt circuit, and a peak current sensor. The peak current sensor detects a rising edge of an input voltage from a phase cut dimmer by detecting a higher peak current. This drives a collector voltage of a second transistor of the peak current limiter low, which lowers a gate voltage of a first transistor of the peak current sensor, and forces it into a linear operating region, so it functions as a damping resistor. When the peak current sensor detects a decreased peak current, such that the turn-on edge of the input voltage is passed, the second transistor turns off, and the turn-on driver turns the first transistor on, such that the active damping circuit is waiting for a next edge of the input voltage.

Abstract: A solid-state automotive vehicle headlamp includes a solid-state light source (SSLS), a clamshell reflector, and a reflector optic. The clamshell reflector includes a reflective surface defining a clamshell cavity with an open end facing a field to be illuminated. The reflector optic is defined by a portion of a spherical surface in surrounding relation to the SSLC. The reflector optic defines a light-transmissive window permitting a direct line-of-sight transmission of light generated by the SSLC to the reflective surface of the clamshell reflector. The reflector optic further includes a reflective region at least partially surrounding the light-transmissive window and configured to reflect light generated by the SSLC and directed at the reflector optic back towards the SSLC. The reflector optic redirects some of the light emitted by the SSLC through the light-transmissive window towards the clamshell reflector to create a more controlled beam pattern and increase the overall light output.

Abstract: A motor vehicle lamp (100), comprising a lamp housing (110) defining an interior compartment (116) and an exterior region (102); a solid-state light source (120) disposed on a first heat sink (150) in thermal communication therewith, the first heat sink (150) being disposed within the interior compartment (116); a second heat sink (170) having an heat-transferring exterior section (178) disposed in the exterior region (102) of the lamp housing (110) and further having a heat-transferring receiver section (176) disposed at least partially within the interior compartment (116); and the first heat sink (150) being in thermal communication with the second heat sink (170) and coupled in displaceable relationship to the second heat sink (170), whereby a position of said solid-state light source (120) is adjustable relative the lamp housing (110).

Abstract: According to the present disclosure, a circuit arrangement for operating semiconductor light sources includes: a power input for inputting an AC input voltage, an output having a first output terminal, and a second output terminal, which is designed to connect a string of semiconductor light sources, a control input for controlling the operation of the circuit arrangement with a control signal, a rectifier circuit for converting the AC input voltage into a rectified voltage, a converter circuit for transforming the rectified voltage into a current which is suitable for the semiconductor light sources, a first switch arranged between the converter circuit and the output, for the switching of the current through the semiconductor light sources, and a first diode arranged between the first switch and the output, or between the converter circuit and the first switch.

Abstract: A method of producing a light-emitting arrangement includes providing a carrier including a top side, attaching a multitude of first conversion elements on the top side of the carrier, wherein the first conversion elements are arranged in a lateral direction spaced apart from one another, attaching an encapsulation on the top side of the carrier, wherein the encapsulation covers the carrier and the first conversion elements at least sectionally, removing the encapsulation in regions between the first conversion elements, and attaching optoelectronic semiconductor chips between the first conversion elements.