Patents Assigned to Ovonyx, Inc.
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Patent number: 9876166Abstract: A process forms a phase change memory cell using a resistive element and a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.Type: GrantFiled: June 10, 2011Date of Patent: January 23, 2018Assignees: Micron Technology, Inc., Ovonyx Inc.Inventors: Roberto Bez, Fabio Pellizzer, Marina Tosi, Romina Zonca
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Patent number: 9159915Abstract: An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.Type: GrantFiled: December 18, 2013Date of Patent: October 13, 2015Assignee: Ovonyx, Inc.Inventors: Ilya V. Karpov, Sean Jong Lee, Yudong Kim, Greg Atwood
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Patent number: 9076521Abstract: A thin-film memory may include a thin-film transistor-free address decoder in conjunction with thin-film memory elements to yield an all-thin-film memory. Such a thin-film memory excludes all single-crystal electronic devices and may be formed, for example, on a low-cost substrate, such as fiberglass, glass or ceramic. The memory may be configured for operation with an external memory controller.Type: GrantFiled: July 14, 2012Date of Patent: July 7, 2015Assignee: Ovonyx, Inc.Inventor: Ward Parkinson
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Patent number: 9036409Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.Type: GrantFiled: July 21, 2014Date of Patent: May 19, 2015Assignee: Ovonyx, Inc.Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
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Patent number: 9000408Abstract: An electronic device includes a first electrode and a second electrode. The device also includes a resistive material between the first and second electrodes. An active material is between the first electrode and the resistive material. The active material is in electrical communication with the first electrode and the active material is in electrical communication with the second electrode through the resistive layer.Type: GrantFiled: October 12, 2007Date of Patent: April 7, 2015Assignee: Ovonyx, Inc.Inventors: Sergey Kostylev, Tyler Lowrey, Wolodymyr Czubatyj
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Patent number: 8908413Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.Type: GrantFiled: August 24, 2011Date of Patent: December 9, 2014Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
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Patent number: 8861293Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.Type: GrantFiled: December 11, 2013Date of Patent: October 14, 2014Assignee: Ovonyx, Inc.Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
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Patent number: 8796101Abstract: A phase-change memory device includes a first insulator having a hole therethrough, a first electrode that conforms at least partially to the hole, a phase-change material in electrical communication with the first electrode, and a second electrode in electrical communication with the phase-change material. When current is passed from the first electrode to the second electrode through the phase-change material, at least one of the first and second electrodes remains unreactive with the phase change material.Type: GrantFiled: August 20, 2012Date of Patent: August 5, 2014Assignee: Ovonyx, Inc.Inventors: Wolodymyr Czubatyj, Regino Sandoval
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Patent number: 8792270Abstract: A memory includes an interface through which it provides access to memory cells, such as phase change memory cells. Such access permits circuitry located on a separate integrated circuit to provide access signals, including read and write signals suitable for binary or multi-level accesses.Type: GrantFiled: May 10, 2011Date of Patent: July 29, 2014Assignee: Ovonyx, Inc.Inventor: Ward Parkinson
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Patent number: 8773941Abstract: A thin-film memory may include a thin-film transistor-free address decoder in conjunction with thin-film memory elements to yield an all-thin-film memory. Such a thin-film memory excludes all single-crystal electronic devices and may be formed, for example, on a low-cost substrate, such as fiberglass, glass or ceramic. The memory may be configured for operation with an external memory controller.Type: GrantFiled: July 14, 2012Date of Patent: July 8, 2014Assignee: Ovonyx, Inc.Inventor: Ward Parkinson
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Patent number: 8767440Abstract: An addressing scheme for non-volatile memory arrays having short circuit defects that manages the demand for error correction. The scheme generally avoids simultaneous active driving of the row line and column line of the selected cell during write. Instead, only a single row or column line is actively driven at any one time and all other array lines are left floating. In addition, the number of memory cells accessed from a given row or column during a fetch may be limited. The benefits of the scheme include preventing short circuits from drawing excess currents through the array and limiting the frequency of read or write failures caused by short circuits to a manageable number. In one embodiment, the scheme maintains the demand for error correction to within the error correction capability of a flash controller. Exemplary embodiments include phase-change memory arrays.Type: GrantFiled: May 13, 2013Date of Patent: July 1, 2014Assignee: Ovonyx, Inc.Inventors: Ward Parkinson, Thomas Trent
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Patent number: 8755216Abstract: A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell.Type: GrantFiled: August 3, 2013Date of Patent: June 17, 2014Assignee: Ovonyx, Inc.Inventor: Ward Parkinson
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Patent number: 8716056Abstract: A three-dimensional memory array formed of one or more two-dimensional memory arrays of one-time programmable memory elements arranged in horizontal layers and stacked vertically upon one another; and a two-dimensional memory array of reprogrammable phase change memory elements stacked on the one or more two-dimensional memory arrays as the top layer of the three-dimensional memory array.Type: GrantFiled: September 22, 2009Date of Patent: May 6, 2014Assignee: Ovonyx, Inc.Inventor: Ward Parkinson
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Patent number: 8705306Abstract: A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments.Type: GrantFiled: July 23, 2012Date of Patent: April 22, 2014Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Ward D. Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi, Giulio Casagrande
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Publication number: 20140104939Abstract: An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.Type: ApplicationFiled: December 18, 2013Publication date: April 17, 2014Applicant: Ovonyx, Inc.Inventors: Ilya V. Karpov, Sean Jong Lee, Yudong Kim, Greg Atwood
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Patent number: 8699267Abstract: In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. In one embodiment, a face centered cubic chalcogenide structure may be utilized.Type: GrantFiled: June 5, 2013Date of Patent: April 15, 2014Assignee: Ovonyx, Inc.Inventors: Charles H. Dennison, Stephen J. Hudgens
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Publication number: 20140098604Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.Type: ApplicationFiled: December 11, 2013Publication date: April 10, 2014Applicant: Ovonyx, Inc.Inventors: George A. Gordon, Semyon D. Savransky, Ward D. Parkinson, Sergey Kostylev, James Reed, Tyler A. Lowrey, Ilya V. Karpov, Gianpaolo Spadini
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Patent number: 8685291Abstract: Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable resistance component and an inert component. The variable resistance component may include a phase-change material and the inert component may include a dielectric material. The phase-change material may include Ge, Sb, and Te, where the atomic concentration of Sb is between 3% and 16% and/or the Sb/Ge ratio is between 0.07 and 0.68 and/or the Ge/Te ratio is between 0.6 and 1.1 and/or the concentration of dielectric component (expressed as the sum of the atomic concentrations of the constituent elements thereof) is between 5% and 50%. The compositions exhibit high ten-year data retention temperatures and long data retention times at elevated temperatures.Type: GrantFiled: May 6, 2010Date of Patent: April 1, 2014Assignee: Ovonyx, Inc.Inventors: Carl Schell, Wolodymyr Czubatyj
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Patent number: 8637342Abstract: An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.Type: GrantFiled: November 10, 2005Date of Patent: January 28, 2014Assignee: Ovonyx, Inc.Inventors: Ilya V. Karpov, Sean Jong Lee, Yudong Kim, Gregory E. Atwood
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Patent number: 8634226Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.Type: GrantFiled: June 13, 2011Date of Patent: January 21, 2014Assignee: Ovonyx, Inc.Inventors: George Gordon, Semyon D. Savransky, Ward Parkinson, Sergey A. Kostylev, James Reed, Tyler Lowrey, Ilya V. Karpov, Gianpaolo Spadini