Abstract: The disclosure relates to a fast, stable method of output wavelength control in a DWDM optical device, and a circuit configured to perform the method. The method and circuit can control timing and overshoot during conditions of rapid operational changes, such as during power-on or restart of the device. The method and circuit includes optimized APC, TEC and electro-absorption (EA) modulator control hardware and algorithms, to effectively control transient processes. Software and circuitry based on the method(s) are achieved in part by optimizing APC, EA and TEC control algorithms. In combination with hardware/circuit optimization, one can achieve fast turn-on of an optical output signal at a stable wavelength. The method and circuit provides a stable power-up process in which a change of wavelength is small enough to meet DWDM specification requirements, to ensure the elimination and avoidance of crosstalk in adjacent channels in dense wave (sub)systems.

Abstract: A semiconductor package structure includes an insulating substrate, a patterned conductive layer, a light emitting diode (LED) chip and a conductive connection part. The insulating substrate has an upper surface divided into an element configuration region and an element bonding region. The patterned conductive layer includes plural circuits located in the element configuration region and at least one bonding pad located in the element bonding region. The LED chip is flip chip bonded on the patterned conductive layer and electrically connected to the circuits. The conductive connection part has a first end point electrically connected to the bonding pad and a second end point electrically connected to an external circuit. The bonding pad and a corner of the LED chip are disposed correspondingly. A horizontal distance between an apex of the corner and the first end point of the conductive connection part is greater than or equal to 30 micrometers.

Abstract: A wafer-level process for fabricating a plurality of photoelectric modules is provided. The wafer-level process includes at least following procedures. Firstly, a wafer including a plurality of chips arranged in an array is provided. Next, a plurality of photoelectric devices are mounted on the chips. Next, a cover plate including a plurality of covering units arranged in an array is provided. Next, a plurality of light guiding mediums are formed over the cover plate. Next, the cover plate is bonded with the wafer by an adhesive, wherein each of the covering units covers and bonds with one of the chips, and the light guiding mediums are sandwiched between the cover plate and the wafer. Then, the wafer and the cover plate are diced to obtain the plurality of photoelectric modules.

Abstract: An optical mechanism for a miniaturized spectrometer comprises an input unit, an upper waveguide plate, a lower waveguide plate, and a miniature diffraction grating. The input unit is used to receive an optical signal and direct the optical signal to the interior of the optical mechanism. The upper waveguide plate has a first reflective surface. The lower waveguide plate having a second reflective surface aligned substantially parallel to the upper waveguide plate. The first reflective surface is located opposite to the second reflective surface. An optical channel is formed between the first reflective surface and the second reflective surface, so that optical signal from the input unit can travel in the optical channel. The miniature diffraction grating separates the optical signal transmitted in the optical channel into a plurality of spectral components and directs the spectral components to an image capture module at an end of the miniaturized spectrometer.

Abstract: A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region.

Abstract: Lighting systems comprising a spectrum former upstream from a reflective pixelated spatial light modulator (reflective SLM), the SLM reflecting substantially all of the light in the spectrum into at least two different light paths, that do not reflect back to the light source or the spectrum former. At least one of the light paths acts as a projection light path and transmits desired light out of the lighting system. The lighting systems provide virtually any desired color(s) and intensity(s) of light, and avoid overheating problems by deflecting unwanted light and other electromagnetic radiation out of the system or to a heat management system. The systems can be part of another system, a luminaire, or any other suitable light source. The systems can provide virtually any desired light, from the light seen at the break of morning to specialized light for treating cancer or psoriasis, and may change color and intensity at speeds that are perceptually instantaneous.

Abstract: A heat removal system for use in optical and optoelectronic devices and subassemblies is provided. The heat removal system lowers the power consumption of one or more active cooling components within the device or subassembly, such as a TEC, which is used to remove heat from heat generating components within the device or subassembly. For any particular application, the heat removal system more efficiently removes the heat from the active cooling component, by using a heat transfer assembly, such as a planar heat pipe type assembly. The heat transfer assembly employs properties like, but not limited to, phase transition change and thermal conductivity to move heat without external power. In some embodiments, the heat transfer assembly can be used to allow the active cooling component, such as a TEC to be removed, leaving the heat transfer assembly to remove the heat from the device or subassembly.

Abstract: A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.

Abstract: Embodiments are directed to laser emitter modules and methods and devices for making the modules. Some module embodiments are configured to provide hermetically sealed enclosures that are convenient and cost effective to assemble and provide for active alignment of optical elements of the module.

Abstract: Methods and apparatus are provided for using a renewable source of energy such as solar, wind, or geothermal energy. In some embodiments, the method may include generating electric energy from a renewable form of energy at a plurality of locations at which reside an electric power line associated with an electric power grid. The electric energy generated at each location may be transferred to the electric power line to thereby supply electric energy to the electric power grid.

Abstract: A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a substrate, a first type doped semiconductor layer, a light-emitting layer, a second type doped semiconductor layer and an optical micro-structure layer. The first type doped semiconductor layer is disposed on the substrate and includes a base portion and a mesa portion. The base portion has a top surface, and the mesa portion is disposed on the top surface of the base portion. The light-emitting layer is disposed on the first type doped semiconductor layer. The second type doped semiconductor layer is disposed on the light-emitting layer. The optical micro-structure layer is embedded in the first type doped semiconductor layer.

Abstract: A multi-element diffraction grating is disclosed. The multi-element diffraction grating may be configured to diffract incident radiation with high dispersion using at least two holographic optical elements. The multi-element diffraction grating may include a first volume phase grating that is one of the holographic optical elements. The multi-element diffraction grating may also include at least one additional volume phase grating that is the second holographic optical element. The first volume phase grating and each of the additional volume phase gratings may be positioned relative to each other such that the radiation propagates through and is diffracted by the first volume phase grating and each of the additional volume phase gratings.

Abstract: A planar LED lighting apparatus includes a housing and multiple LEDs. The housing includes a reflective face and a light output surface opposing the reflective face. The multiple LEDs are mounted on sidewalls of the housing, and the axial light of the multiple LEDs is incident on the reflective face.

Abstract: Apparatus and method of making an improved moisture-resistant package for a MEMS device having movable parts, the package including a substrate, a translucent cover over the substrate, a seal and moisture barrier and a plurality of parallel sidewalls around the periphery of the substrate and cover. The sidewalls have ends and an area between the sidewalls, and the sidewalls separate the substrate and cover by a sufficient distance to provide clearance for the movement of the movable parts. The package is sealed using a glue layer that at least partially fills the area between the sidewalls, and lies between the ends of the sidewalls and one of the substrate or cover. The glue layer causes the substrate or cover, respectively, to adhere to the ends of the sidewalls. The glue layer and the sidewalls together prevent moisture from entering the package.

Abstract: An example embodiment of the present invention is a non-blocking wavelength switching architecture that enables graceful scaling of a network wavelength switching node from small to large fiber counts using fixed size bidirectional 1×N Wavelength Selective Switches (WSS). The architecture uses an intermediate broadcast and select layer implemented using optical splitters and WSSs to eliminate wavelength blocking.

Abstract: A wavelength-tunable, ultrafast laser includes a resonator having an optically-pumped gain-medium. The resonator includes a pair of group-delay-dispersion compensating prisms and a bandwidth limiting stop. Both prisms and stop are fixed in a predetermined position relative to one another. In one embodiment, a movable beam shifting reflector is placed between the prisms. The reflector shifts the dispersed beam with respect to the second prism and the stop. The stop is arranged, cooperative with the second prism, to select a pulse wavelength within the gain-bandwidth. Tuning of the selected pulse-wavelength is accomplished by translating the beam shifting reflector. Alternatively, a two-reflector arrangement may also select pulse-wavelengths, accomplished by a combination of rotation and translation of the two reflectors.

Abstract: A wafer containing a plurality of electro-optical devices, each device being enclosed in chamber that has a translucent cover. An X-Y matrix of pairs of interconnections on the wafer are connected to the circuitry of the electro-optical devices for addressing the electro-optical devices. The pairs of interconnections extend outside of the chambers enclosing the devices to testing areas on the periphery of the wafer. Testing is done by signals applied through the interconnections while simultaneously exposing the devices to light through the translucent covers.

Abstract: An all-fiber optic Faraday rotator and isolator is presented. The device has a multicomponent glass optical fiber having a core having a first doping concentration of 55%-85% (wt./wt.) of a first rare-earth oxide and a cladding having a section doping concentration of 55%-85% (wt./wt.) of a second rare-earth oxide, where the first rare-earth oxide and the second rare earth oxide are one or more of Pr2O3, Nd2O3, Pm2O3, Sm2O3, Eu2O3, Gd2O3, Tb2O3, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, La2O3, Ga2O3, Ce2O3, and Lu2O3, and where the refractive index of the cladding is lower than a refractive index of the core. The fiber optic device further includes multiple magnetic cells each formed to include a bore extending there through, where the fiber is disposed in the bore of one of the magnetic cells.

Abstract: A spectrometer capable of eliminating side-tail effects includes a body and an input section, a diffraction grating, an image sensor unit and a wave-guiding device, which are mounted in the body. The input section receives a first optical signal and outputs a second optical signal travelling along a first light path. The diffraction grating receives the second optical signal and separates the second optical signal into a plurality of spectrum components, including a specific spectrum component travelling along a second light path. The image sensor unit receives the specific spectrum component. The wave-guiding device includes first and second reflective surfaces opposite to each other and limits the first light path and the second light path between them to guide the second optical signal and the specific spectrum component. The first and second reflective surfaces are separated from a light receiving surface of the image sensor unit by a predetermined gap.

Abstract: Methods for increasing the processing speed of computational electromagnetic methods, such as the Method of Moments (MoM), may involve using efficient mapping of algorithms onto a Graphics Processing Unit (GPU) architecture. Various methods may provide speed/complexity improvements to either or both of: (1) direct solution via Lower-Upper (LU) factorization; and (2) iterative methods (e.g., Generalized Minimal Residual (GMRES) method).