Abstract: A quantum information processing device including a semiconductor substrate. An optical resonator is coupled to the substrate. The optical resonator supports a first photonic mode with a first resonator frequency. The quantum information processing device includes a non-gaseous chalcogen donor atom disposed within the semiconductor substrate and optically coupled to the optical resonator. The donor atom has a transition frequency in resonance with the resonator frequency. Also disclosed herein are systems, devices, articles and methods with practical application in quantum information processing including or associated with one or more deep impurities in a silicon substrate optically coupled to an optical structure.

Abstract: An anti-theft system and method for encoding power for distribution to a load (e.g., a house) and a decoding of the encoded power at the load for consumption. A meter with an integrated decoder may be installed proximate a house (or another load). In some embodiments, the combination meter/decoder system may be configured to replace a traditional meter on a standard service panel, to minimize any impact or changes to the home or other building. In other embodiments, an add-on decoder system may be configured for installation between a standard meter and a service panel (optionally, plug and play). Alternatively, an add-on decoder system may be installed with the meter positioned (electrically) between the add-on decoder system and the service panel of the house (or other type of load or consumer).

Abstract: Embodiments pertain to an optical transmitter, including a thermally unregulated light emitting device and a sloped or graded passband filter. The light emitting device is configured to receive a bias current and output an optical signal within a wavelength band. The sloped or graded passband filter is configured to attenuate an output power of the optical signal in the wavelength band. The light emitting device has a maximum bias current limit, a maximum operating temperature limit, and maximum and minimum output power limits, and the sloped or graded passband filter has an insertion loss in the wavelength band that decreases as the light emitting device temperature increases and/or the optical signal wavelength increases within the wavelength band. The attenuated optical signal is within the maximum and minimum output power limits when the bias current is at or below the maximum bias current limit and the light emitting device outputs the optical signal at or below the maximum operating temperature limit.

Abstract: Resonant cavity power converters for converting radiation in the wavelength range from 1 micron to 1.55 micron are disclosed. The resonant cavity power converters can be formed from one or more lattice matched GaInNAsSb junctions and can include distributed Bragg reflectors and/or mirrored surfaces for increasing the power conversion efficiency.

Abstract: Embodiments relate to a free space optical (FSO) communications system with a feed-forward control path. A data-encoded FSO beam is transmitted from a local terminal to a remote terminal. The local terminal directs a propagation direction of the FSO beam by a beam steering unit. To reduce pointing errors between the terminals, the FSO communications system includes a feed-forward control path. The control path includes an inertial measurement unit (IMU) that outputs motion data indicative of motion of the local terminal, for example if the local terminal is mounted to a tower that sways. The control path also includes a controller that receives the motion data from the IMU and generates feed-forward control signals for the beam steering unit. The control signals compensate for an effect of the motion of the local terminal on the propagation direction of the FSO beam.

Abstract: This invention relates to the means for detection of molecular and chemical matter utilizing multiple techniques covering electronics, optics, and imaging techniques. More particularly, this invention is related to detecting levels of certain molecules inside the body through non-invasive contact or non-contact with the body. More specifically, this invention is related to the means to detect levels of molecules associated with metabolic diseases, more particularly the early diagnosis of the disease, especially diabetes. This invention also relates to a medical device that utilizes electromagnetic waves of varying wavelengths and detects waves returned to the device.

Abstract: Techniques and devices for optical sensing of rotation based on measurements and sensing of optical polarization or changes in optical polarization due to rotation without using optical interferometry.

Abstract: An optical phase shifter and a method of making the same are disclosed. The phase shifter includes a substrate, a p-doped electrode and an n-doped electrode on the substrate, a first doped semiconductor layer on the p-doped electrode or the n-doped electrode and in electrical contact with the other electrode, a second doped semiconductor layer on the first doped semiconductor layer, a first vertical region electrically connecting the second doped semiconductor layer with the one electrode, and a cladding layer on or over the second semiconductor layer, the first vertical region, and at least a first sidewall of each of the first and second semiconductor layers. The p-doped electrode and the n-doped electrode form a p-n junction at an interface therebetween. The first and second doped semiconductor layers have the same doping type as the other electrode and the one electrode, respectively.

Abstract: A VCSEL device having non-coaxial-with-one-another apertures and/or rotationally asymmetric apertures formed in layer(s) of the VCSEL structure to define more than one spatial mode in a light output in operation of the device. An array of such VCSEL devices configured to have different spatial modes at the output of different constituent VCSEL devices. Spatial asymmetry of structure of the constituent VCSEL devices and, therefore, arrays of VCSEL devices causes the overall light output to form an irregular grid of output spots of light. When the VCSEL array is equipped with an appropriate lens array, the spatial components of the light output of the VCSEL array are caused to overlap in the far at the imaging plane in a multiple spatial (and spectral) mode fashion, thereby reducing speckle in imaging applications.

Abstract: Measurement apparatuses and methods are disclosed for generating high-precision and—accuracy gas concentration maps that can be overlaid with 3D topographic images by rapidly scanning one or several modulated laser beams with a spatially-encoded transmitter over a scene to build-up imagery. Independent measurements of the topographic target distance and path-integrated gas concentration are combined to yield a map of the path-averaged concentration between the sensor and each point in the image. This type of image is particularly useful for finding localized regions of elevated (or anomalous) gas concentration making it ideal for large-area leak detection and quantification applications including: oil and gas pipeline monitoring, chemical processing facility monitoring, and environmental monitoring.

Abstract: Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for anomalous gas concentration detection. A spectroscopic system, such as a wavelength modulated spectroscopy (WMS) system may measure gas concentrations in a target area. However, noise, such as speckle noise, may interfere with measuring relatively low concentrations of gas, and may lead to false positives. A noise model, which includes a contribution from a speckle noise model, may be used to process data from the spectroscopic system. An adaptive threshold may be applied based on an expected amount of noise. A speckle filter may remove measurements which are outliers based on a measurement of their noise. Plume detection may be used to determine a presence of gas plumes. Each of these processing steps may be associated with a confidence, which may be used to determine an overall confidence in the processed measurements/gas plumes.

Abstract: An electronic device having a display with an infrared component (such as a camera, a light source) behind the display. The layer of the display is transparent to infrared light at which the infrared component operates. Infrared sensing functions, when implemented by the component, may be accomplished by transmission of infrared light through the layer of the display, thereby removing the conventional need for cut-outs or holes in the display plane and maximizing the display area.

Abstract: A system, such as a head-mounted display (HMD), displays images to a user. The system has an active state and an idle state. The system includes a display device, a beam combiner, and a user-operated control. The display device displays images when the system is in the active state and emits a reduced amount or no light when the system is in the idle state. The beam combiner provides a first optical path for light from an external environment to the user's eye and also provides a second optical path for light emitted from the display device to the user's eye. Responsive to activation by the user, the control switches the system between states that include the active state and the idle state, where the idle state is a default state and the system remains in the active state only while the user-operated control remains activated by the user.

Abstract: A light emitting device includes a growth substrate, a light emitting component, a first conductive bump and a second conductive bump. The light emitting component is disposed on the growth substrate, including a first type semiconductor layer, a second type semiconductor layer, a light emitting layer, an ohmic contact layer, a first conductor layer, and a second conductor layer. The light emitting layer and the second type semiconductor layer are penetrated by a trench. The ohmic contact layer is disposed on the first type semiconductor layer and is disposed in the trench. The ohmic contact layer is electrically connected to the first type semiconductor layer. The first conductor layer is disposed on the first type semiconductor layer and is disposed in the trench. The first conductor layer covers the ohmic contact layer. The second conductor layer is disposed on the second type semiconductor layer, and is electrically connected to the second type semiconductor layer.

Abstract: The present disclosure relates to system-level integration of lasers, electronics, integrated photonics-based optical components and a sensing chip. Novel waveguide design on the integrated photonics chip, acting as a front-end chip, ensures precise detection of phase change in a fiber coil or a sensing chip having a waveguide coil or ring resonator, where the sending chip is coupled to the front end chip. Strip waveguides are designed to primarily select TE mode over TM mode when laser light is coupled into the integrated photonics chip. A plurality of mode-selective filters, based on multi-mode interference (MMI) filter, a serpentine structure, or other types of waveguide-based mode-selective structure, are introduced in the system architecture. Additionally, implant regions are introduced around the waveguides and other optical components to block unwanted/stray light into the waveguides and optical signal leaking out of the waveguide.

Abstract: A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

Abstract: An optical signal generating apparatus is provided. A plurality of optical waveguides is disposed in different dielectric layers. A first light splitting pattern and a second light splitting pattern are disposed in the optical waveguides. The first light splitting pattern includes a first heterogeneous layer portion intersected with the second light splitting pattern in different dielectric layers to form at least one first intersection, the first heterogeneous layer portion and the second light splitting pattern are disposed in different optical waveguides, and a light beam with a specific wavelength, transmitted by the first light splitting pattern, is subject to a layer-to-layer transition before reaching the first intersection, so as to enter different optical waveguides.

Abstract: An optical coupler array can include an elongated optical element having a coupler housing structure and at least one longitudinal waveguide embedded in said housing structure. The housing structure can have an outer cross sectional shape comprising a first side comprising one or more curved portions and a second side comprising one or more flat portions. The second side can be disposed at a distance from the at least one longitudinal waveguide such that waveguiding properties are preserved and not disturbed.

Abstract: A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivity type that is between the first laser diode stack and the second laser diode stack.