Abstract: This invention relates to smart bottle system that informs the user through a display, the time and date that the contents are to be taken. More specifically, the smart bottle system provides an information to the user/patient, the time to take medication and inform the caregiver, physician, pharmacy personnel, or patient/users of missed doses, the profile, and/or the health condition of the patient/user. The bottle system may track the doses remaining in the bottle, and inform the caregiver or patient/user, or pharmacy personnel the time to get a refill of the medication. The system can able to compute the profile and/or health condition of the users, based on the medication intake, and/or missed, or users image, and can communicate with the persons located remotely by sending/receiving information.

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ?10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.

Abstract: A ?LED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the ?LED is also provided.

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

Abstract: A silicon photonic integrated system in a switch includes a multi-wavelength laser module, a first multiplexer, an optical channel, and a light signal generating element. The multi-wavelength laser module is configured to emit n laser beams with different peak wavelengths, and n is an integer greater than 2. The first multiplexer is optically coupled to the multi-wavelength laser module and configured to receive the laser beams and combine them into a combined beam. The optical channel is configured to receive a combined beam. The light signal generating element receives the combined beam through the optical channel and modulates the combined beam to emit a plurality of light output signals.

Abstract: Measurement approaches and data analysis methods are disclosed for combining 3D topographic data with spatially-registered gas concentration data to increase the efficiency of gas monitoring and leak detection tasks. Here, the metric for efficiency is defined as reducing the measurement time required to achieve the detection, or non-detection, of a gas leak with a desired confidence level. Methods are presented for localizing and quantifying detected gas leaks. Particular attention is paid to the combination of 3D spatial data with path-integrated gas concentration measurements acquired using remote gas sensing technologies, as this data can be used to determine the path-averaged gas concentration between the sensor and points in the measurement scene.

Abstract: This invention relates to a novel structure of photovoltaic devices (e.g. photovoltaic cells also called as solar cells) are provided. The cells are based on the micro or nano scaled structures which could not only increase the surface area but also have the capability of self-concentrating the light incident onto the photonics devices. More specifically, the structures are based on 3D structure including quintic or quintic-like shaped micor-nanostructures. By using such structures reflection loss of the light from the cell is significantly reduced, increasing the absorption, which results in increasing the conversion efficiency of the solar cell, and reducing the usage of material while increasing the flexibility of the solar cell. The structures can be also used in other optical devices wherein the reflection loss and absorption are required to enhanced to significantly improve the device performances.

Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.

Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

Abstract: Autonomous/self-powering image detecting systems and their manufacturing technologies are disclosed. An antenna is used to communicate signals. A first energy harvester is used to harvest energy from blackbody radiation, RF signals, movement/vibration, or combination thereof. A power management system is used which controls the energy flow to and from the energy-storage. An image sensor to take the image, a lens, and a transmitter to transmit the images to an outside device are also used in this invention. According to this preferred embodiment, an energy harvester harnessing energy from blackbody radiation from and within the body, is used to extract enough energy to increase the operation time and also to make precision of the image detecting system.

Abstract: A light emitting device including a light emitting unit, two electrodes, a reflective member, and a light transmissive member is provided. The two electrodes are disposed on one side of the light emitting unit, and electrically connected to the light emitting unit. The reflective member is disposed on the other side of the light emitting unit, and has at least one reflective surface. The light transmissive member is disposed between the reflective member and the light emitting unit, and covers a part of the light emitting unit. A lateral surface of the light transmissive member is served as a light emitting surface of the light emitting device. A manufacturing method of a light emitting device is also provided.

Abstract: Embodiments relate to a high power supercontinuum (SC) fiber optical source. The SC fiber optical source includes a prebroadening optical fiber that broadens the spectrum of a lower power intermediate optical signal before final amplification. The spectrum broadening creates spectral components which facilitate further spectrum broadening of amplified signal in final nonlinear stage, allowing to achive flatter and wider spectrum, and reduces nonlinear Stimulated Brillouin Scattering (SBS) that could damage SC fiber optical source components or limit the output power of the SC fiber optical source signal, thus enabling higher output power. After amplification in booster, passing at least part of broadened spectrum, the optical signal spectrum is further broadened by injecting the optical signal into a nonlinear stage to create a SC optical signal.

Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.

Abstract: A ?LED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the ?LED is also provided.

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

Abstract: A WDM multiplexing/demultiplexing system includes a de-multiplexer configured to separate and guide light beams from an incident ray having a plurality of wavelengths to corresponding lenses on an optical device, a multiplexer configured to guide light beams from optical transmitters having various wavelengths through the corresponding lenses on the optical device and combine the light beams, a lens array including the corresponding lenses to receive and/or transmit the light beams from or to the de-multiplexer and multiplexer, and a light beam collimator configured to function with the multiplexer and de-multiplexer. The light beams received or transmitted by the light beam collimator and the light beams transmitted or received from or to the multiplexer and de-multiplexer are collinear. The light beam collimator and multiplexer/de-multiplexer can be easily positioned to predetermined or designed positions, thereby providing light beams output through the lenses in a plastic optical device.

Abstract: This invention provides a novel wavelength-separating-routing (WSR) apparatus that uses a diffraction grating to separate a multi-wavelength optical signal by wavelength into multiple spectral channels, which are then focused onto an array of corresponding channel micromirrors. The channel micromirrors are individually controllable and continuously pivotable to reflect the spectral channels into selected output ports. As such, the inventive WSR apparatus is capable of routing the spectral channels on a channel-by-channel basis and coupling any spectral channel into any one of the output ports. The WSR apparatus of the present invention may be further equipped with servo-control and spectral power-management capabilities, thereby maintaining the coupling efficiencies of the spectral channels into the output ports at desired values.

Abstract: This invention provides a novel wavelength-separating-routing (WSR) apparatus that uses a diffraction grating to separate a multi-wavelength optical signal by wavelength into multiple spectral characters, which are then focused onto an array of corresponding channel micromirrors. The channel micromirrors are individually controllable and continuously pivotable to reflect the spectral channels into selected output ports. As such, the inventive WSR apparatus is capable of routing the spectral channels on a channel-by-channel basis and coupling any spectral channel into any one of the output ports. The WSR apparatus of the present invention may be further equipped with servo-control and spectral power-management capabilities, thereby maintaining the coupling efficiencies of the spectral channels into the output ports at desired values.