Abstract: An integrated circuit including a substrate; a circuit pattern formed over the substrate; and one or more fences formed around edges of the circuit pattern, each of the one or more fences having a determined electrical resistance which is used to detect the addition of malicious circuitry. Each fence has a determined electrical resistance which is used to monitor the validity of the fence.

Abstract: A photomask for integrated circuit production for development of integrated circuit components, where the integrated circuit production uses a radiation source that generates a source image, includes a substrate with one or more layers disposed thereon; a source separator element that separates the source image into one or more duplicate source images; one or more polarizing elements each corresponding to one of the one or more duplicate source images; and one or more sensors each corresponding to one of the one or more polarizing elements, the one or more sensors sensing one or more radiation characteristics of the radiation source.

Abstract: A secure photomask including a substrate having one or more pattern layers formed thereon and a blocking aperture disposed below the one or more pattern layers that prevents at least one of unauthorized use and copying of the photomask.

Abstract: A method of forming a semiconductor layer of a semiconductor device including interposing a reticle between an energy source and a semiconductor wafer, the reticle including at least two duplicate mask patterns each having a different bias, and passing energy through an opening in a shutter and through one of the at least two duplicate mask patterns using the energy source to form an image on the semiconductor wafer. The one of the at least two duplicate mask patterns is chosen based on a required bias. The at least two duplicate mask patterns are disposed in a side by side relationship to one another and extend parallel or transverse to the shutter opening.

Abstract: A reticle includes at least two duplicate mask patterns each having a different bias. A reticle according to at least one embodiment of the invention includes a first mask pattern, a second mask pattern and a third mask pattern, each of the first mask pattern, second mask pattern and third mask pattern being duplicates of one another and having a different bias.

Abstract: The present invention relates to a comprehensive front-end method and system for automatically generating and processing photomask orders. This method and system includes two separate, but related software components. The first software component of the present invention is used to generate a photomask order in a specified format. The second software component of the present invention processes at least a portion of the photomask order (which was generated using the first software component) into a substantially ready-to-write jobdeck file and/or a substantially ready-to-write inspection file, which in turn is transferred to a remote photomask manufacturer's system to manufacture a photomask. These software components can be installed as separate programs on a computer system or operate as a single software package performing multiple functions.

Abstract: A fused silica pellicle for use on photomasks having increased durability and improved transmission uniformity and birefringence properties. The pellicle is to be intimately secured to the patterned surface of a photomask.

Abstract: The present invention generally relates to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes a light absorbing film in a conventional aaPSMs to balance the intensity of light through each opening of the photomask. The aaPSM of the present invention is used to make semiconductor devices or integrated circuits.

Abstract: The attenuation and phase shift properties of an embedded attenuated phase shift mask (EAPSM) may be independently selected. After or during plowing of regions of an embedded phase shift layer, exposed regions of a substrate are etched to a predetermined depth. Additional regions of the embedded phase sift layer are then exposed and trimmed to a predetermined thickness for providing the desired amount of attenuation, with the final etched depth of the substrate compensating for the change of relative phase shift caused by trimming of the phase shift layer. A matrix test device having a plurality of cells with different levels of attenuation and/or phase shift may then be fabricated on a single EAPSM blank.

Abstract: The present invention generally relates to improved binary half tone (“BHT”) photomasks and microscopic three-dimensional structures (e.g., MEMS, micro-optics, photonics, micro-structures and other three-dimensional, microscopic devices) made from such BHT photomasks. More particularly, the present invention provides a method for designing a BHT photomask layout, transferring the layout to a BHT photomask and fabricating three-dimensional microscopic structures using the BHT photomask designed by the method of the present invention. In this regard, the method of designing a BHT photomask layout comprises the steps of generating at least two pixels, dividing each of the pixels into sub-pixels having a variable length in a first axis and fixed length in a second axis, and arraying the pixels to form a pattern for transmitting light through the pixels so as to form a continuous tone, aerial light image.

Abstract: The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits.

Abstract: The present invention relates generally to an automated manufacturing system and method for manufacturing photomasks wherein information provided by a customer at a remote location is interfaced, via a network, to a photomask manufacturer's computer system and automatically processes data for manufacturing a photomask and automatically formats and routes data to processing equipment. The present invention reduces the need for manual intervention, thereby avoiding costly delays and transcription errors associated therewith. The software of the present invention provides for automatic generation of data arrays, which can be used to process and monitor the status of a photomask during manufacture. Further, the software is capable of automatically modifying design data provided by a photomask user. Additionally, the software of the present invention includes an automatic messaging system which can notify users of the system, of status and errors in manufacture of photomasks.

Abstract: The present invention generally relates to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes a light absorbing film in a conventional aaPSMs to balance the intensity of light through each opening of the photomask. The aaPSM of the present invention is used to make semiconductor devices or integrated circuits.

Abstract: A method for creating a photomask which includes a layer of hard mask material the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches the anti-reflective material and opaque material.

Abstract: A chirped Bragg grating is fabricated in an optical fiber by exposing the fiber to a coherent beam of light through a parallel phase mask having a series of progressively chirped segments produced on a lithography tool. The chirped phase mask is fabricated by exposing a photoresist-coated substrate to an image writing element such as an electron beam or a laser according to a set of parameters provided to the lithography tool. The parameters include a basic grating pattern for each segment, a value that defines the expansion or contraction of the grating pattern and an axis location to which the grating pattern is to be written to the substrate. By selecting machine commands that implement these parameters with a minimum throughput overhead, the mask can be produced in a reduced time, and therefore with increased accuracy.

Abstract: The present invention relates generally to improved photomask blanks used in photolithography for the manufacture of integrated circuits and other semiconductor devices, and more specifically, to the detection of defects in such photomasks after processing. In particular, the present invention is directed to a photomask blank having one or more intermediate layers made from materials having a higher extinction coefficient at the inspection tool wavelength than exposure tool wavelengths. The intermediate layer(s) are made from materials that absorb a sufficient amount of light to meet the optical requirements of inspection tools while at the same time transmit a sufficient amount of light to meet the optical requirements of exposure tools. As a result, the photomask improves inspection results of a photomask without sacrificing transmission properties during the semiconductor writing process.

Abstract: The present invention relates generally to a rule based system and method for automatically generating photomask orders in a specified format, and more particularly, relates to software which includes templates in which photomask order data is entered and rules for guiding the user in entering such data and rules for ensuring that such data is entered accurately. The rules and templates implemented in the present invention are organized and stored in a manner which allows for the software to be easily adapted to meet the criteria of any existing standard (e.g., SEMI P10) or proprietary photomask order format now known or hereinafter developed. Additionally, the software of the present invention provides for the ability to generate new photomask orders using templates and/or existing photomask order data.

Abstract: The present invention generally relates to improved binary half tone (“BHT”) photomasks and microscopic three-dimensional structures (e.g., MEMS, micro-optics, photonics, micro-structures and other three-dimensional, microscopic devices) made from such BHT photomasks. More particularly, the present invention provides a method for designing a BHT photomask layout, transferring the layout to a BHT photomask and fabricating three-dimensional microscopic structures using the BHT photomask designed by the method of the present invention. In this regard, the method of designing a BHT photomask layout comprises the steps of generating at least two pixels, dividing each of the pixels into sub-pixels having a variable length in a first axis and fixed length in a second axis, and arraying the pixels to form a pattern for transmitting light through the pixels so as to form a continuous tone, aerial light image.

Abstract: The current invention provides a method and apparatus that minimizes the destructive effects of non-reflected energy during lithography. More specifically, a cooling system is located within the mask. In one example, a cooling module is integrated into the EUV mask. The cooling module may be thermoelectric. The EUV mask comprises a substrate structure as a base for a reticle, a cooling layer, which is formed on the substrate structure and a planarizing layer deposited on the cooling layer. In another example, a cooling channel is formed within the mask.

Abstract: The present invention relates generally to an automated manufacturing system and method for manufacturing photomasks wherein information provided by a customer at a remote location is interfaced, via a network, to a photomask manufacturer's computer system and automatically processes data for manufacturing a photomask and automatically formats and routes data to processing equipment. The present invention reduces the need for manual intervention, thereby avoiding costly delays and transcription errors associated therewith. The software of the present invention provides for automatic generation of data arrays, which can be used to process and monitor the status of a photomask during manufacture. Further, the software is capable of automatically modifying design data provided by a photomask user. Additionally, the software of the present invention includes an automatic messaging system which can notify users of the system, of status and errors in manufacture of photomasks.