Abstract: An epitaxial structure includes a first epitaxial layer, a second epitaxial layer, and an interface treatment layer. The second epitaxial layer is disposed on the first epitaxial layer. The interface treatment layer is located between the first epitaxial layer and the second epitaxial layer and is in contact with the first epitaxial layer and the second epitaxial layer. The first epitaxial layer, the second epitaxial layer, and the interface treatment layer include the same material. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of a TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

Abstract: An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial layer is different from a material of the first epitaxial layer. The interface treatment layer contacts the first epitaxial layer and the second epitaxial layer and is located between the first epitaxial layer and the second epitaxial layer. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of the TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.

Abstract: A defect detection and removal apparatus including a removing unit, an image capturing unit, and a determining unit is provided. The removing unit is configured to remove at least one defective micro-element on a substrate. The image capturing unit is configured to capture a detection image of at least one defective micro-element correspondingly on the substrate. The determining unit is coupled to the image capturing unit and the removing unit. The image capturing unit executes capturing a first detection image before the removing unit executes removing a defective micro-element, and executes capturing a second detection image after the removing unit executes removing the defective micro-element. The determining unit confirms whether the defective micro-element has been removed according to the first and second detection image obtained from the image capturing unit. A defect detection and removal method is also provided.

Abstract: A micro light-emitting element including an epitaxial structure, an insulating layer, an electrode structure and a sacrificial layer is provided. The epitaxial structure includes a top surface and a side surface. The insulating layer is disposed on the top surface and the side surface of the epitaxial structure, and the insulating layer includes an opening. The electrode structure is disposed on the top surface of the epitaxial structure and extends through the opening of the insulating layer to be electrically connected to the epitaxial structure. The sacrificial layer is sandwiched between a surface of the insulating layer and the corresponding electrode structure. A micro light-emitting element display device is further provided.

Abstract: A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

Abstract: A micro LED display device includes: a substrate; a plurality of micro light-emitting diodes disposed on the substrate; and a reflective layer and a black layer sequentially stacked on the substrate. The reflective layer and the black layer cover a surface of the substrate, wherein a top surface of the plurality of micro light-emitting diodes is exposed through the reflective layer and the black layer. A plurality of reflective banks and a plurality of black banks are sequentially disposed on the black layer and exposing the plurality of micro light-emitting diodes; and a color-conversion material covers the top surface of at least one of the plurality of micro light-emitting diodes. The color-conversion material is laterally disposed between the plurality of reflective banks. The reflective layer, the black layer, the plurality of reflective banks, and the plurality of black banks overlap each other in a display direction.

Abstract: A micro light-emitting component including a first type cladding layer, a light-emitting layer, a second type cladding layer, a plurality of window layers and at least one interposer is provided. The light-emitting layer is located on the first type cladding layer, and the second type cladding layer is located on the light-emitting layer. The light-emitting layer is located between the first type cladding layer and the second type cladding layer. The window layers are located on the second type cladding layer. The interposer is located between any two adjacent of the window layers. An ion doping concentration of the interposer is less than or equal to an ion doping concentration of the window layers.

Abstract: A micro light-emitting diode (LED) display panel including a substrate, a first micro LED, a first light-shielding wall, a second micro LED, and a second light-shielding wall is provided. The substrate includes a plurality of pixel regions arranged in an array. The first micro LED is disposed on one of the pixel regions of the substrate. The first light-shielding wall is disposed on the substrate and located beside the first micro LED. The second micro LED is disposed on the one of the pixel regions of the substrate and located beside the first micro LED. The second light-shielding wall is disposed on the substrate and located beside the second micro LED. A light wavelength of the first micro LED is different from a light wavelength of the second micro LED. A height of the first light-shielding wall is smaller than a height of the second light-shielding wall.

Abstract: A micro light-emitting diode display panel includes a substrate, at least one light-emitting element, a reflective layer and a light-absorbing layer. The at least one light-emitting element is disposed on the substrate to define at least one pixel, and each light-emitting element includes micro light-emitting diodes. The reflective layer is disposed on the substrate and located between the micro light-emitting diodes. The reflective layer has cavities surrounding the micro light-emitting diodes, such that a thickness of a portion of the reflective layer close to any one of the micro light-emitting diodes is greater than a thickness of a portion of the reflective layer away from the corresponding micro light-emitting diode. The light-absorbing layer is at least disposed in the cavities of the reflective layer.

Abstract: Micro LED display device and driving method thereof. The display device includes a display substrate and a data driving circuit. The display substrate includes multiple pixels, and each pixel includes a first subpixel and a second subpixel. The first subpixel has a first subpixel circuit and a first light-emitting element. The second subpixel has a second subpixel circuit and a second light-emitting element. The first subpixel circuit and the second subpixel circuit are configured independently. The data driving circuit is electrically connected to the first and the second subpixel circuits. The data driving circuit transmits a first data signal to the first subpixel circuits to drive the first light-emitting elements and a second data signal to the second subpixel circuits to drive the second light-emitting elements. The first data signal is a PWM signal, and the second data signal is a PAM signal.

Abstract: A light emitting display unit includes a redistribution layer (RDL) and multiple light emitting elements. The RDL includes multiple electrode patterns, multiple pad patterns, an insulating layer and multiple conductive through holes. A first gap and a second gap are respectively formed between two adjacent electrode patterns and between corresponding two adjacent pad patterns. A third length of the overlapping area of an orthographic projection of the first gap on the pad patterns and the pad patterns in a first direction is less than or equal to a second length of the second gap in the first direction. The micro light emitting elements are disposed on the RDL and electrically connected with the electrode patterns.

Abstract: A method for trimming a micro electronic element includes: providing a substrate, wherein at least one micro electronic element is disposed on the substrate, heating an interface of the substrate and the micro electronic element by a first pulse laser beam to reduce a bonding force between the micro electronic element and the substrate, and irradiating a surface layer of the micro electronic element by a second pulse laser beam to generate a shock wave due to plasma on the surface layer of the micro electronic element. The shock wave removes the micro electronic element away from the substrate. An apparatus for trimming a micro electronic element is also provided.

Abstract: A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.

Abstract: An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.

Abstract: A micro-light-emitting diode chip includes an epitaxial structure, an electrode, a transparent structure, and a reflection layer. The epitaxial structure has a light exit surface, a back surface opposite to the light exit surface, and a sidewall surface. The sidewall surface is connected to the light exit surface and the back surface. The electrode is electrically coupled to the epitaxial structure. The transparent structure has an inner surface and an outer surface opposite to the inner surface. The inner surface is connected to the sidewall surface. A distance between the outer surface and the inner surface on a plane where the back surface is located is less than a distance between the outer surface and the inner surface on a plane where the light exit surface is located. The reflection layer is in direct contact with the outer surface. A micro-light-emitting diode display is also provided.

Abstract: A micro LED display device includes a display substrate. The display substrate has a first transfer area and a second transfer area adjacent to each other. Both the first transfer area and the second transfer area include a plurality of pixel areas. The pixel area of the first transfer area includes a first micro light-emitting element arranged in a straight line along a first direction. The pixel area of the second transfer area includes a second micro light-emitting element arranged in another straight line along the first direction. In the first direction, the first micro light-emitting element and the second micro light-emitting element are arranged in a staggered manner. A manufacturing method of a micro LED display device is also provided.

Abstract: An epitaxial structure includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, and a buffer layer structure. The light emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light emitting layer. The buffer layer structure is disposed on one side of the first type semiconductor layer away from the second type semiconductor layer and includes a first buffer layer and a second buffer layer. The second buffer layer is located between the first buffer layer and the first type semiconductor layer, and the first buffer layer has a chlorine concentration greater than a chlorine concentration of the second buffer layer.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first microelectronic elements on a first temporary substrate; and replacing at least one defective microelectronic element of the first microelectronic elements with at least one second microelectronic element. The first microelectronic elements and at least one second microelectronic element are distributed on the first temporary substrate. The first microelectronic elements and at least one second microelectronic element have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first microelectronic elements and at least one second microelectronic element. A semiconductor structure and a display panel are also provided.

Abstract: A transparent display panel with a light-transmitting substrate, a plurality of top-emitting micro light emitting diodes, a plurality of bottom-emitting micro light emitting diodes, and a light shielding layer. The light transmissive substrate has a surface. These top-emitting micro light emitting diodes and these bottom-emitting micro light emitting diodes are disposed on the surface of the light transmissive substrate. The bottom-emitting micro light emitting diodes has an epitaxial structure and a light shielding member, the epitaxial structure has a pair of upper and lower surfaces on the opposite sides, the lower surface faces toward the light transmissive substrate, and the light shielding member is disposed on the upper surface to shield the light emitted by the bottom-emitting micro light emitting diodes towards the upper surface.