Abstract: A pixel structure is provided. The pixel structure includes a substrate, a micro light-emitting diode, and an electrophoretic structure. The micro light-emitting diode is disposed on the substrate and configured to emit light. The electrophoretic structure is disposed on the micro light-emitting diode and includes an upper electrode, a lower electrode, an electrophoretic medium, and an electrophoretic lens. The electrophoretic medium is disposed between the upper electrode and the lower electrode, wherein the electrophoretic medium has a first refractive index. The electrophoretic lens is disposed in the electrophoretic medium and has a second refractive index that is different from the first refractive index. The electrophoretic lens is configured to move away from or toward the micro light-emitting diode by being driven by the electric field, so that light passing through the electrophoretic lens has a first or second divergence angle after refracting.

Abstract: An encapsulation structure including a substrate, an isolation structure layer, a planarization layer, and a composite layer structure is disclosed. The isolation structure layer is disposed on the substrate and defines multiple sub-pixel areas. The polarization layer is disposed on the substrate, and has a peripheral portion surrounding and covering the isolation structure layer. A thickness of the peripheral portion increases as it approaches the isolation structure layer. The composite layer structure connects the substrate and covers the planarization layer and the isolation structure layer. The composite layer includes two barrier layers and an extension layer. The extension layer is located between and connects the two barrier layers. A thickness, a water vapor transmission rate, and ductility and malleability of the extension layer are respectively greater than a thickness, a water vapor transmission rate, and ductility and malleability of each of the two barrier layers.

Abstract: A micro light emitting diode structure includes a temporary substrate, a plurality of micro light emitting elements, a plurality of light blocking structures, and a connection layer. The micro light emitting elements and the light blocking structures are disposed on the temporary substrate and arranged alternately. Each of the light blocking structures includes a light blocking layer, and a light shielding layer disposed thereon. The micro light emitting elements and the light blocking structures are fixed to the temporary substrate by the connection layer. The connection layer is a part of a plurality of fixing structures. A reflectivity of the light blocking layer is greater than a reflectivity of the connection layer, and a Young's modulus of the light blocking layer is greater than a Young's modulus of the fixing structures, and the Young's modulus of the fixing structures is greater than a Young's modulus of the light shielding layer.

Abstract: A light emitting device including an epitaxial structure and a plurality of surface microstructures is provided. The epitaxial structure has a light emitting surface and a surrounding wall surface. The surrounding wall surface surrounds and is connected to the light emitting surface. The plurality of surface microstructures are separately arranged on the light emitting surface along a plurality of directions. The plurality of directions are not perpendicular to the surrounding wall surface. A light emitting device substrate including a plurality of the light emitting device is also provided.

Abstract: A display panel and a manufacturing method thereof are provided. The display panel includes a circuit substrate and a plurality of micro light-emitting diode structures. The micro light-emitting diode structures each include a micro light-emitting chip and a molding structure. The micro light-emitting chip is electrically bonded to the circuit substrate, and includes a first surface, a second surface, and a peripheral surface. The first surface is located on a side of the micro light-emitting chip facing the circuit substrate. The second surface is disposed opposite to the first surface. The peripheral surface connects the first surface and the second surface. The molding structure surrounds the peripheral surface and encloses the second surface of the micro light-emitting chip. The molding structure extends in a direction away from the circuit substrate and forms an inner side wall. The inner side wall and the second surface constitute an accommodating portion.

Abstract: A wafer defect detection device adapted for detecting a sample to be tested including two detection features is provided. The wafer defect detection device includes a stage adapted for holding the sample to be tested, a light source module configured to output a detection light to the sample to be tested and reflect a reflected light, and an image sensor disposed on a path of the reflected light and adapted for receiving an image frame. The detection light includes spectra of a first light and a second light, which have two different peak wavelengths. The spectrum of the first light is adapted for detecting one of the detection features. The spectrum of the second light is adapted for detecting other one of the detection features. Luminous intensities of the first light and the second light are independently controlled. The reflected light includes the image frame, which displays the detection features.

Abstract: A display panel includes a pixel unit. The pixel unit includes a first sub-pixel and a second sub-pixel. The first sub-pixel includes a first light-emitting element, a first light source element, and a first color conversion structure. A light emitted by the first light-emitting element has a first color. The first color conversion structure is disposed on the first light source element and adapted to convert a light emitted by the first light source element into a light of the first color. The second sub-pixel includes a second light-emitting element. A light emitted by the second light-emitting element has a second color different from the first color.

Abstract: A micro light emitting diode display panel including a plurality of display units and a control element is provided. The plurality of display units are arranged in an array and each of the plurality of display units includes a first sub-pixel. The first sub-pixel includes a first micro light-emitting diode and a second micro light-emitting diode. The control element is configured to control light emission of the first micro light-emitting diode and the second micro light-emitting diode and determines operating currents of the first micro light-emitting diode and the second micro light-emitting diode. In a same display image, the operating current of the first micro light-emitting diode increases as an operating temperature of the first sub-pixel increases.

Abstract: A pixel circuit includes a current generator, a switch, and a time controller. The pixel circuit is configured in a display panel. The current generator provides a driving current, and controls the driving current according to a pulse amplitude modulation mechanism. The switch is coupled in series with the current generator and a light-emitting component, and is turned on or off according to a control signal, wherein the control signal is a pulse width modulation signal. The time controller generates the control signal, receives a set voltage, and adjusts a pulse width of the control signal according to a voltage value of the set voltage.

Abstract: A micro light-emitting element is provided. The micro light-emitting element includes a first-type semiconductor having a bottom surface and a light-emitting layer disposed on the first-type semiconductor. The micro light-emitting element also includes a second-type semiconductor disposed on the light-emitting layer and an intrinsic semiconductor disposed on the second-type semiconductor and made of the same material as the second-type semiconductor. The intrinsic semiconductor has a top surface relative to the bottom surface. The sidewalls of the first-type semiconductor, the light-emitting layer, the second-type semiconductor, and the intrinsic semiconductor form a continuous side surface, and the side surface connects the bottom surface to the top surface.

Abstract: A multi-layer display module includes a first display panel, and a second display panel. Dimension of long side of the first display panel is D1, and the first display panel has first pixel resolution P1. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space d between the first display panel and the second display panel. Dimension of the long side of the second display panel is D2, and the second display panel has the second pixel resolution P2. Transmittance of the second display panel is T2. The multi-layer display module complies with T2>40%, P1?P2, and D ? 2 * T ? 2 ? d ? D ? 2 ? "\[LeftBracketingBar]" P ? 1 - P ? 2 ? "\[RightBracketingBar]" * P ? 2 .

Abstract: A micro light emitting device inspection apparatus adapted to inspect a plurality of micro light emitting devices is provided. The micro light emitting device inspection apparatus includes a carrier stage, a light guide module and a detective module. The carrier stage is configured to hold the micro light emitting devices. The light guide module has a plurality of optical fibers. Each of the optical fibers has a light receiving surface and a light emitting surface away from each other. The at least one light beam is received by the light receiving surface of each optical fiber and exits through the light emitting surface of the optical fiber. The detective module is configured to receive and detect the at least one light beam from the light emitting surface of each optical fiber, thereby obtaining at least one optical property.

Abstract: A laser processing apparatus provides a laser unit, a vibration mirror module, a focusing module, and a processing platform. The laser unit emits a laser pulse beam. The vibration mirror module, positioned on the path of the laser pulse beam, reflects the laser pulse beam and has a first mode and a second mode configured to reflect the laser pulse beam into a first beam while the module is in the first mode or alternatively, into a second beam while the module is in the second mode. The first beam and the second beam travel in different directions. The focusing module receives the second beam reflected by the vibration mirror module in the second mode and focuses the second beam onto a focus. The processing platform is positioned at the focus to bear a to-be-processed device, upon which the second beam is cast.

Abstract: A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and at least one first air gap is provided. The substrate has a plurality of connection pads. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the substrate and each of the micro light emitting devices. The at least one first air gap is disposed between the substrate and a surface of the isolation layer facing the substrate.

Abstract: A laser processing apparatus including a laser light source, a polarizing beam splitter, a first reflective mirror, a second reflective mirror, and a polarizing beam combiner is disclosed. The laser light source is configured to generate a laser light. The polarizing beam splitter is configured to divide the laser light into a first beam and a second beam. The first reflective mirror is configured to reflect the first beam. The second reflective mirror is configured to reflect the second beam. The polarizing beam combiner is disposed on a path of the first beam reflected by the first reflective mirror and on a path of the second beam reflected by the second reflective mirror. An optical axis of the polarizing beam combiner is not parallel to the first beam. The polarizing beam combiner is configured to guide the first beam and the second beam.

Abstract: A multi-layer display module includes a first display panel, and a second display panel. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space between the first display panel and the second display panel. Transmittance of the second display panel is T2, luminance of the first display panel is L1, and luminance of the second display panel is L2. The multi-layer display module complies with T ? 2 > 40 ? % and 0.8 ? L ? 1 L ? 2 * ( 1 - T ? 2 ) .

Abstract: A semiconductor wafer carrier structure includes a carrier body having a surface, a protective film covering the surface, and a susceptor disposed on the carrier body and having an upper surface. The upper surface is a planar surface. The semiconductor wafer carrier structure further includes a patterned coating film formed on the upper surface and configured to directly face a semiconductor wafer. A material of the patterned coating film is different from the susceptor. The patterned coating film has two or more different thicknesses and is with a pattern, so that the semiconductor wafer is at least locally separated from the patterned coating film due to the pattern. The patterned coating film is continuously and entirely distributed on the upper surface of the susceptor toward the semiconductor wafer, and the upper surface of the susceptor is separated from the semiconductor wafer by the patterned coating film.

Abstract: A display panel is provided. The display panel includes a carrier having a patterned region that is disposed on the surface of the carrier and corresponds to a plurality of sub-pixel structures. The display panel also includes an encapsulation material layer disposed on a portion of the pattered region. The display panel further includes a first color conversion layer disposed on the portion of the encapsulation material layer and includes a plurality of first color conversion capsules. The first color conversion capsules are configured to convert the light-emitting color of the sub-pixel structures into a first light-emitting color. Partial surfaces of some first color conversion capsules are exposed from the encapsulation material layer.

Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer.

Abstract: A processing and detecting apparatus configured to process and detect an object is provided and includes a carrying platform, a laser unit, a wavelength measuring unit, and a computing unit. The carrying platform is configured to carry the object, and the object includes a substrate and a plurality of micro light emitting diodes (LEDs) disposed on the substrate. The laser unit is configured to perform a working procedure on the object on the carrying platform and excite each of the micro LEDs to radiate a light signal. The wavelength measuring unit is configured to measure the light signal radiated by exciting each of the micro LEDs in real time to obtain a spectrum of each of the micro LEDs. The computing unit is configured to analyze the spectra of the micro LEDs to determine whether the working procedure is abnormal.