Abstract: A micro LED display device includes a display substrate. The display substrate has a first transfer area and a second transfer area adjacent to each other. Both the first transfer area and the second transfer area include a plurality of pixel areas. The pixel area of the first transfer area includes a first micro light-emitting element arranged in a straight line along a first direction. The pixel area of the second transfer area includes a second micro light-emitting element arranged in another straight line along the first direction. In the first direction, the first micro light-emitting element and the second micro light-emitting element are arranged in a staggered manner. A manufacturing method of a micro LED display device is also provided.

Abstract: An epitaxial structure includes a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, and a buffer layer structure. The light emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light emitting layer. The buffer layer structure is disposed on one side of the first type semiconductor layer away from the second type semiconductor layer and includes a first buffer layer and a second buffer layer. The second buffer layer is located between the first buffer layer and the first type semiconductor layer, and the first buffer layer has a chlorine concentration greater than a chlorine concentration of the second buffer layer.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first microelectronic elements on a first temporary substrate; and replacing at least one defective microelectronic element of the first microelectronic elements with at least one second microelectronic element. The first microelectronic elements and at least one second microelectronic element are distributed on the first temporary substrate. The first microelectronic elements and at least one second microelectronic element have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first microelectronic elements and at least one second microelectronic element. A semiconductor structure and a display panel are also provided.

Abstract: A transparent display panel with a light-transmitting substrate, a plurality of top-emitting micro light emitting diodes, a plurality of bottom-emitting micro light emitting diodes, and a light shielding layer. The light transmissive substrate has a surface. These top-emitting micro light emitting diodes and these bottom-emitting micro light emitting diodes are disposed on the surface of the light transmissive substrate. The bottom-emitting micro light emitting diodes has an epitaxial structure and a light shielding member, the epitaxial structure has a pair of upper and lower surfaces on the opposite sides, the lower surface faces toward the light transmissive substrate, and the light shielding member is disposed on the upper surface to shield the light emitted by the bottom-emitting micro light emitting diodes towards the upper surface.

Abstract: A spliced micro light-emitting-diode display panel includes multiple circuit boards spliced with each other and multiple micro light-emitting-diode modules. Each circuit board includes at least one driver IC. The micro light-emitting-diode modules are disposed separately on each circuit board and are electrically connected to the driver IC. Each micro light-emitting-diode module includes multiple light-emitting-diode units arranged in an array. On each circuit board, the driver IC drives the light-emitting-diode units of the micro light-emitting-diode modules to emit light. There is a first gap between any adjacent two of the light-emitting-diode units on any adjacent two of the circuit boards, and there is a second gap between any adjacent two of the light-emitting-diode units on each micro light-emitting-diode module, and the first gap is smaller than the second gap.

Abstract: A manufacturing method of a micro light emitting diode structure includes: providing a first transfer stamp carrying a plurality of micro light emitting elements; providing a second transfer stamp carrying a plurality of light blocking structures, wherein each of the light blocking structures includes a light blocking layer and a light shielding layer disposed on the light blocking layer; providing a temporary substrate; transferring the micro light emitting elements onto the temporary substrate by the first transfer stamp; and transferring the light blocking structures onto the temporary substrate by the second transfer stamp. The micro light emitting elements and the light blocking structures are arranged alternately and fixed to the temporary substrate by connection layer. A reflectivity of the light blocking layer is greater than a reflectivity of the connection layer, and a Young's modulus of the light blocking layer is greater than a Young's modulus of the connection layer.

Abstract: A micro light emitting diode structure includes a temporary substrate, a plurality of micro light emitting elements, a plurality of light blocking structures, and a connection layer. The micro light emitting elements and the light blocking structures are disposed on the temporary substrate and arranged alternately. Each of the light blocking structures includes a light blocking layer, and a light shielding layer disposed thereon. The micro light emitting elements and the light blocking structures are fixed to the temporary substrate by the connection layer. The connection layer is a part of a plurality of fixing structures. A reflectivity of the light blocking layer is greater than a reflectivity of the connection layer, and a Young's modulus of the light blocking layer is greater than a Young's modulus of the fixing structures, and the Young's modulus of the fixing structures is greater than a Young's modulus of the light shielding layer.

Abstract: A micro light emitting diode display panel including multiple pixel structures is provided. Each of the pixel structures includes at least one sub-pixel, which includes a first micro-light-emitting chip with a first light-emitting area and a second micro-light-emitting chip with a second light-emitting area smaller than the first light-emitting area. The first micro-light-emitting chip emits light corresponding to a first luminance interval according to a first operating current interval. The second micro light-emitting chip emits light corresponding to a second luminance interval according to a second operating current interval. A gray-scale value of the second luminance interval is lower than a gray-scale value of the first luminance interval. The first micro-light-emitting chip and the second micro light-emitting chip have the same light-emitting color. The second micro-light-emitting chip has a smaller slope of a tangent line to a luminance versus current curve than the first micro-light-emitting chip.

Abstract: A micro LED display device includes a substrate, micro LED units and a transparent insulation layer. The substrate includes conductive pads and conductive connecting portions. The conductive pads are disposed on the substrate. Each of the micro LED units includes a semiconductor epitaxial structure and electrodes. The electrodes are disposed on the semiconductor epitaxial structure, and each of the electrodes is connected to one of the conductive connecting portions adjacent to each other. The transparent insulation layer is disposed on the substrate and covers the conductive pads, the conductive connecting portions and the micro LED units, and the transparent insulation layer is filled between the electrodes of each of the micro LED units. The transparent insulation layer relative to a surface on each of the semiconductor epitaxial structures is of a first thickness and a second thickness, and the first thickness is different from the second thickness.

Abstract: A micro-electronic element transfer apparatus including a first conveyer portion, a second conveyer portion, and a light source device is provided. The first conveyer portion is configured to output a plurality of micro-electronic elements. The second conveyer portion includes a first rolling component and a substrate. The substrate is disposed on the first rolling component and is moved through rolling of the first rolling component. A plurality of bumps are disposed on the substrate. The light source device is configured to irradiate the bumps for heating, and the bumps generate a phase transition. When the micro-electronic elements are outputted from the first conveyer portion, a connection force between the micro-electronic elements and the first conveyer portion is less than a connection force between the micro-electronic elements and the bumps. The micro-electronic elements are respectively bonded to the bumps. A micro-electronic element transfer method is also provided.

Abstract: The micro light-emitting diode (LED) display matrix module of the disclosure includes a multilayer circuit layer, multiple micro LEDs, and an insulating flat layer. The multilayer circuit layer includes a top circuit layer and a bottom circuit layer. The bottom circuit layer includes multiple pads. The micro LEDs are disposed on the top circuit layer of the multilayer circuit layer and define multiple light-emitting units. Each of the light-emitting units includes three of the micro LEDs that are separated from each other. The light-emitting units are arranged in a matrix of m columns and n rows to define multiple pixel regions, and quantity of the pads is equal to 3m+n. An orthographic projection of each of the micro LEDs on the bottom circuit layer completely overlaps the corresponding pad. The insulating flat layer covers the top circuit layer of the multilayer circuit layer and the micro LEDs.

Abstract: A micro LED display device includes a display substrate. The display substrate has a first transfer area and a second transfer area adjacent to each other. Both the first transfer area and the second transfer area include a plurality of pixel areas. The pixel area of the first transfer area includes a first micro light-emitting element arranged in a straight line along a first direction. The pixel area of the second transfer area includes a second micro light-emitting element arranged in another straight line along the first direction. In the first direction, the first micro light-emitting element and the second micro light-emitting element are arranged in a staggered manner. A manufacturing method of a micro LED display device is also provided.

Abstract: A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

Abstract: A selectable-repairing micro light emitting diode display is provided. A backplane includes a plurality of transistor units. A plurality of pixel units are disposed on the backplane, and each of the pixel units includes a plurality of original sub-pixel units and at least one selectable-repairing sub-pixel unit. Each of the original sub-pixel units includes a set of original pad. The set of original pad is disposed on the backplane and connected to one of the transistor units. The at least one selectable-repairing sub-pixel unit is arranged between two of the original sub-pixel units next to each other and having different colors, and includes a set of repairing pad. The set of repairing pad is not connected to the transistor units. A plurality of micro light emitting elements are electrically connected to the sets of original pad and controlled to emit light through the corresponding transistor units, respectively.

Abstract: A micro LED display device includes a micro light emitting unit, a conductive structure and a substrate. The micro light emitting unit includes a plurality of micro light emitting elements, and each of the micro light emitting elements includes a semiconductor structure and an electrode structure. The semiconductor structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The electrode structure includes a first type electrode and a second type electrode. The conductive structure includes a first type conductive layer and a second type conductive layer. The first type conductive layer is electrically connected to the first type electrode, and the second type conductive layer is electrically connected to the second type electrode. The micro light emitting unit is disposed on the substrate, and the electrode structure is disposed toward the substrate and includes a gap therebetween.

Abstract: A display panel includes a pixel unit. The pixel unit includes a first sub-pixel and a second sub-pixel. The first sub-pixel includes a first light-emitting element, a first light source element, and a first color conversion structure. A light emitted by the first light-emitting element has a first color. The first color conversion structure is disposed on the first light source element and adapted to convert a light emitted by the first light source element into a light of the first color. The second sub-pixel includes a second light-emitting element. A light emitted by the second light-emitting element has a second color different from the first color.

Abstract: An epitaxial semiconductor structure including a substrate, a semiconductor layer, and a balance structure is provided. The substrate has a first surface and a second surface opposite to each other. The semiconductor layer is formed on the first surface. The balance structure is formed on the second surface, the balance structure is configured to balance the thermal stress on the substrate, and the balance structure is composed of a plurality of non-continuous particulate materials. An epitaxial substrate is also provided.

Abstract: A micro LED display panel and a pixel driving circuit thereof. The pixel driving circuit is used for driving a light-emitting unit, which includes a plurality of micro LEDs connected in series. The pixel driving circuit includes a switch unit, a driving unit and a selection unit. The switch unit controls a data signal input according to a scan signal. The driving unit is electrically connected to the switch unit and the light-emitting unit, and is electrically connected to a first voltage. The selection unit receives a selection signal and is electrically connected to a second voltage. The selection unit is electrically connected to the micro LEDs and the driving unit. The number and brightness of the micro LEDs to be turned on are controlled by the selection unit and the driving unit according to the selection signal and the data signal.

Abstract: A micro light emitting diode structure includes a temporary substrate, a plurality of micro light emitting elements, a plurality of light blocking structures, and a connection layer. The micro light emitting elements and the light blocking structures are disposed on the temporary substrate and arranged alternately. Each of the light blocking structures includes a light blocking layer, and a light shielding layer disposed on the light blocking layer. The micro light emitting elements and the light blocking structures are fixed to the temporary substrate by the connection layer. A reflectivity of the light blocking layer is greater than a reflectivity of the connection layer, and a Young's modulus of the light blocking layer is greater than a Young's modulus of the connection layer.

Abstract: A micro semiconductor structure includes a substrate, a dissociative layer, a protective layer and a micro semiconductor. The dissociative layer is located on one side of the substrate. The protective layer is located on at least one side of the substrate. The micro semiconductor is located on the side of the substrate. The transmittance of the protective layer for a light source with wavelength smaller than 360 nm is less than 20%.