Abstract: The present invention discloses a flexible micro device display panel which comprises a substrate, a plurality of micro light emitting units, a first trace line, and a backup conductive line. The substrate comprises a display region having a bending area and a non-bending area. The plurality of micro light emitting units are disposed on the substrate within the display region. The first trace line is arranged from the non-bending area to the bending area. The backup conductive line is disposed at a second metal layer and coupled with the first trace line. The first metal layer and the second metal layer are disposed on the substrate, and the distance between the substrate and the first metal layer is different from the distance between the substrate and the second metal layer. The backup conductive line is not disposed within the non-bending area.

Abstract: A manufacturing method of a micro light emitting diode structure includes: providing a first transfer stamp carrying a plurality of micro light emitting elements; providing a second transfer stamp carrying a plurality of light blocking structures, wherein each of the light blocking structures includes a light blocking layer and a light shielding layer disposed on the light blocking layer; providing a temporary substrate; transferring the micro light emitting elements onto the temporary substrate by the first transfer stamp; and transferring the light blocking structures onto the temporary substrate by the second transfer stamp. The micro light emitting elements and the light blocking structures are arranged alternately and fixed to the temporary substrate by connection layer. A reflectivity of the light blocking layer is greater than a reflectivity of the connection layer, and a Young's modulus of the light blocking layer is greater than a Young's modulus of the connection layer.

Abstract: An LED micro display device includes a circuit substrate, micro light-emitting elements, an insulating layer, and a common electrode layer. The circuit substrate has conductive patterns. The micro light-emitting elements are bonded to the circuit substrate and disposed corresponding to the conductive patterns. Each micro light-emitting element has a bottom surface, a top surface and a side wall. The bottom surface connects to the corresponding conductive pattern. The side wall has a first sidewall portion adjacent to the circuit substrate and a second sidewall portion connected to the first sidewall portion. The insulating layer is disposed on the circuit substrate, covers first sidewall portions, and exposes second sidewall portions. The common electrode layer covers the insulating layer and second sidewall portions. The common electrode layer is electrically connected to the micro light-emitting elements, contacts the second sidewall portions, and exposes the top surfaces.

Abstract: A micro light emitting diode panel including a circuit substrate and multiple transfer units. is provided. The circuit substrate includes multiple signal lines, multiple bonding pads, and multiple thin film transistors. The bonding pads extend from at least part of the signal lines. The transfer units are electrically bonded to a part of the bonding pads and are electrically connected to the thin film transistors. Each transfer unit has a micro light emitting diode and a transistor element. The thin film transistors each have a first semiconductor pattern. The transistor elements each have a second semiconductor pattern. An electron mobility of the second semiconductor pattern is at least five times an electron mobility of the first semiconductor pattern.

Abstract: Mass transfer equipment including a base stage, a first substrate stage, a second substrate stage, at least one laser head and a servo motor module is provided. The first substrate stage is adapted to drive a target substrate to move along a first direction. The second substrate stage is adapted to drive at least one micro device substrate to move along a second direction. The at least one laser head is adapted to move to a target position of the second substrate stage and emits a laser beam toward the at least one micro device substrate. At least one micro device is separated from a substrate of the at least one micro device substrate and connected with the target substrate after the irradiation of the laser beam. The servo motor module is used for driving the first substrate stage, the second substrate stage and the at least one laser head to move.

Abstract: A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.

Abstract: A micro light-emitting component, a micro light-emitting structure and a display device are disclosed. The micro light-emitting component has a micro light-emitting chip and a buffer element. The micro light-emitting chip has a first surface, a second surface opposite to the first surface and a plurality of outer sidewalls. The buffer element is disposed on the outer sidewalls or the first surface of the micro light-emitting chip. The buffer element has an inner surface and an outer surface. An angle is defined between the inner surface and the first surface or an extended surface of the first surface. The angle is greater than or equal to 90 degrees and less than or equal to 180 degrees. Therefore, the buffer element prevents the first surface of the micro light-emitting chip from damaging by collision when the micro light-emitting chip is dropped with the first surface facing down during a transferring procedure.

Abstract: A micro light-emitting chip structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer having a peripheral surface and an end surface. The micro light-emitting chip structure includes a first insulating layer, a reflective layer, and a second insulating layer that cover at least the peripheral surface and the end surface. The reflective layer is disposed on the first insulating layer. The second insulating layer is disposed on the reflective layer. The micro light-emitting chip structure includes an electrode disposed on the end surface and connected to the second-type semiconductor layer and a dielectric structure between the electrode and the reflective layer. The dielectric structure is connected to the first insulation layer and the second insulation layer and closes the part of the reflective layer adjacent to the electrode on the end surface, so as to electrically insulate the electrode from the reflective layer.

Abstract: The micro light-emitting chip structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer that has an end surface. The micro light-emitting chip structure also includes a first insulating layer, a reflective layer, and a second insulating layer disposed on the second-type semiconductor layer. The micro light-emitting chip structure further includes an electrode and a dielectric structure. The electrode is disposed on the end surface and penetrates the second insulating layer, the reflective layer, and the first insulating layer. The dielectric structure is between the electrode and the reflective layer and surrounds the electrode. The annular sidewall of the dielectric structure has a first end away from the second-type semiconductor layer and a second end close to the second-type semiconductor layer. The inner diameter of the first end is greater than or equal to the inner diameter of the second end.

Abstract: A micro light-emitting chip structure includes a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer having a peripheral surface and an end surface. The micro light-emitting chip structure includes a first insulating layer, a reflective layer, and a second insulating layer that cover at least the peripheral surface and the end surface. The reflective layer is disposed on the first insulating layer. The second insulating layer is disposed on the reflective layer. The micro light-emitting chip structure includes an electrode disposed on the end surface and connected to the second-type semiconductor layer. A gap is formed between the electrode and the reflective layer, so as to electrically insulate the electrode from the reflective layer.

Abstract: A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

Abstract: A micro light emitting diode display panel includes a backplane and a plurality of micro light emitting diode chips. The backplane includes a plurality first electrode lines and a plurality of second electrode lines. The first electrode lines and the second electrode lines define a plurality of sub-pixel regions arranged in an array form. The micro light emitting diode chips are disposed on the backplane and respectively located in the sub-pixel regions. Each of the micro light emitting diode chips has a first electrode, a plurality of second electrodes and a plurality of light-emitting regions. The first electrode is boned to one of the first electrode lines, and the second electrodes are boned to one of the second met lines. In a defect sub-pixel region, the electrical connection between one of the second electrodes and the corresponding one of the second electrode lines is cut to isolate.

Abstract: A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.

Abstract: A micro LED display device is provided. The micro LED display device includes a substrate. The micro LED display device also includes a first micro LED disposed on the substrate. The micro LED display device further includes at least one first refraction structure disposed on and corresponding to the first micro LED. Moreover, the micro LED display device includes a second micro LED disposed on the substrate and adjacent to the first micro LED. The micro LED display device also includes at least one second refraction structure disposed on and corresponding to the second micro LED.

Abstract: A pixel circuit includes a current generator, a switch, and a time controller. The pixel circuit is configured in a display panel. The current generator provides a driving current, and controls the driving current according to a pulse amplitude modulation mechanism. The switch is coupled in series with the current generator and a light-emitting component, and is turned on or off according to a control signal, wherein the control signal is a pulse width modulation signal. The time controller generates the control signal, receives a set voltage, and adjusts a pulse width of the control signal according to a voltage value of the set voltage.

Abstract: A micro light emitting device inspection apparatus adapted to inspect a plurality of micro light emitting devices is provided. The micro light emitting device inspection apparatus includes a carrier stage, a light guide module and a detective module. The carrier stage is configured to hold the micro light emitting devices. The light guide module has a plurality of optical fibers. Each of the optical fibers has a light receiving surface and a light emitting surface away from each other. The at least one light beam is received by the light receiving surface of each optical fiber and exits through the light emitting surface of the optical fiber. The detective module is configured to receive and detect the at least one light beam from the light emitting surface of each optical fiber, thereby obtaining at least one optical property.

Abstract: A wafer defect inspection apparatus including a carrier base, a light source module, a beam splitter, filters and image sensors are provided. The carrier base carries a sample to be tested. The light source module includes an illuminating unit and a pellicle mirror. The illuminating unit emits an inspection light ray. A reflective surface is capable of reflecting the inspection light ray to the sample to be tested, so that a reflective light ray formed by reflecting the inspection light ray reflected by the sample to be tested passes through the pellicle mirror and is then split into splitting light rays by the beam splitter. The filters are configured to be passed through by different bands corresponding to the splitting light rays. The image sensors receive the splitting light rays to generate imaging frames. Two corresponding positions in any two of the imaging frames have two different contrast ratios.

Abstract: A wafer defect detection device adapted for detecting a sample to be tested including two detection features is provided. The wafer defect detection device includes a stage adapted for holding the sample to be tested, a light source module configured to output a detection light to the sample to be tested and reflect a reflected light, and an image sensor disposed on a path of the reflected light and adapted for receiving an image frame. The detection light includes spectra of a first light and a second light, which have two different peak wavelengths. The spectrum of the first light is adapted for detecting one of the detection features. The spectrum of the second light is adapted for detecting other one of the detection features. Luminous intensities of the first light and the second light are independently controlled. The reflected light includes the image frame, which displays the detection features.

Abstract: A display apparatus including at least one driving circuit board, a plurality of light-emitting units, and a light-shielding layer is provided. The light-emitting units are disposed on a surface of the at least one driving circuit board and respectively have a plurality of pixel areas. The light-shielding layer is disposed on the at least one driving circuit board and disposed between the light-emitting units. The light-emitting units each have a circuit layer and a plurality of micro light-emitting devices. The circuit layer is electrically bonded to one of the at least one driving circuit board. The plurality of micro light-emitting devices are disposed on a side of the circuit layer away from the at least one driving circuit board and electrically bonded to the circuit layer. The micro light-emitting devices are respectively located in the pixel areas. A method of fabricating the display apparatus is also provided.

Abstract: A micro semiconductor device includes an epitaxial structure and an optical layer. The optical layer is disposed on the epitaxial structure. The optical layer is a multi-layer film structure including a first film layer, a second film layer, and a third film layer disposed between the first film layer and the second film layer. A refractive index of the first film layer and a refractive index of the second film layer are both greater than a refractive index of the third film layer. A thickness of the third film layer is greater than a thickness of the first film layer and s thickness of the second film layer. A reflectivity of the optical layer to an external light of the micro semiconductor device is greater than a self-luminescence of the epitaxial structure of the micro semiconductor device.