Abstract: A micro LED carrier board is provided. The micro LED carrier board includes a substrate structure having a first surface and a second surface and having a central region and a peripheral region on the outside of the central region. The micro LED carrier board includes a plurality of micro LED elements forming an array and on the second surface of the substrate structure. The micro LED carrier board includes a patterned structure formed on the first surface and the second surface. The patterned structure has a first pattern density in the central region and a second pattern density in the peripheral region, and the first pattern density is different from the second pattern density.
Abstract: A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and an air gap is provided. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the micro light emitting devices. The air gap is disposed between the micro light emitting devices, the isolation layer, and the substrate.
Type:
Application
Filed:
April 30, 2020
Publication date:
August 13, 2020
Applicant:
PlayNitride Display Co., Ltd.
Inventors:
Chih-Ling Wu, Yen-Yeh Chen, Yi-Min Su, Yi-Chun Shih
Abstract: A micro light emitting device display apparatus including a circuit substrate, a plurality of micro light emitting devices, a first common electrode layer, and a second common electrode layer is provided. The micro light emitting devices are disposed on the circuit substrate and individually include an epitaxial structure and a first-type electrode and a second-type electrode respectively disposed on two side surfaces of the epitaxial structure opposite to each other. The first common electrode layer is disposed on the circuit substrate and directly covers the plurality of first-type electrodes of the micro light emitting devices. The second common electrode layer is disposed between the micro light emitting devices. The first common electrode layer is electrically connected to the second common electrode layer.
Type:
Application
Filed:
April 30, 2020
Publication date:
August 13, 2020
Applicant:
PlayNitride Display Co., Ltd.
Inventors:
Chih-Ling Wu, Yen-Yeh Chen, Yi-Min Su, Yi-Chun Shih, Bo-Wei Wu, Yu-Yun Lo, Ying-Ting Lin, Tzu-Yang Lin
Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices includes a carrier and a plurality of transfer units. The carrier has a carrier surface and a plurality of recesses disposed on the carrier surface. The transfer units are respectively disposed in the recesses and a plurality of transferring surfaces are exposed. Each micro device has a device surface. The transferring surface of each transfer unit is configured to be connected to the device surface of the corresponding micro device. A micro device structure including the carrier structure is also provided.
Abstract: A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.
Abstract: A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, a plurality of micro semiconductor devices disposed on the substrate, and a first supporting layer disposed between the substrate and the micro semiconductor devices. Each of the micro semiconductor devices has a first electrode and a second electrode disposed on a lower surface of the micro semiconductor devices. The lower surface includes a region, wherein the region is between the first electrode and the second electrode. An orthographic projection of the first supporting layer on the substrate at least overlaps an orthographic projection of a portion of the region on the substrate. The first supporting layer directly contacts the region.
Abstract: A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length L1 of the upper portion in the first direction is greater than the length L2 of the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.
Abstract: A display apparatus includes a driving substrate and a plurality of micro light-emitting devices (LEDs). The driving substrate has a plurality of pixel regions. The plurality micro LEDs are disposed in in each of the pixel regions and electrically connected to the driving substrate. Orthogonal projection areas of the micro LEDs in each of the pixel regions on the driving substrate are equal. At least two micro LEDs in each of the pixel regions have different effective light-emitting areas.
Abstract: A ?LED chip having at least two light-emitting regions and including an epitaxial structure layer, a first-type electrode and at least two second-type electrodes is provided. The epitaxial structure layer includes a first-type semiconductor layer, at least two light-emitting layers and at least two second-type semiconductor layers. The light-emitting layers are respectively located in the light-emitting regions, one of the light-emitting layers has a first area, and the other light-emitting layer has a second area. A ratio of the first area to the second area is between 1.5 and 3, and a difference in current densities respectively passing through the at least two light-emitting regions is less than 10%. The light-emitting layers are located between the first-type semiconductor layer and the second-type semiconductor layers. The first-type electrode is electrically connected to the first-type semiconductor layer.
Type:
Application
Filed:
June 12, 2019
Publication date:
September 26, 2019
Applicant:
PlayNitride Display Co., Ltd.
Inventors:
Yu-Hung Lai, Yu-Yun Lo, Tzu-Yang Lin, Yun-Li Li