Abstract: A carrier structure suitable for transferring or supporting a plurality of micro devices includes a carrier and a plurality of transfer units. The carrier has a carrier surface and a plurality of recesses disposed on the carrier surface. The transfer units are respectively disposed in the recesses and a plurality of transferring surfaces are exposed. Each micro device has a device surface. The transferring surface of each transfer unit is configured to be connected to the device surface of the corresponding micro device. A micro device structure including the carrier structure is also provided.

Abstract: A micro semiconductor chip, a micro semiconductor structure, and a transfer device are provided. The micro semiconductor chip includes an epitaxial structure, a first-type electrode, a second-type electrode and a top light guide element. The epitaxial structure has a top surface, a bottom surface and a side surface. The top light guide element is disposed on the top surface of the epitaxial structure, wherein the top light guide element has a light extraction surface and a bottom surface, wherein the edge of the light extraction surface completely overlaps the edge of the bottom surface of the top light guide element. The light extraction surface is a curved surface, a combination of at least two curved surfaces, or a combination of at least one curved surface and at least one planar surface.

Abstract: A micro-LED display device is provided. The micro-LED display device includes a substrate having a first circuit layer and a second circuit layer. The micro-LED display device also includes a first pad and a second pad respectively disposed on the first circuit layer and the second circuit layer. The micro-LED display device further includes a micro-LED that includes a first electrode and a second electrode. The first electrode and the second electrode are respectively connected to the first pad and the second pad. Moreover, the micro-LED display device includes a first bonding support layer disposed between the first pad and the second pad and in direct contact with the substrate and the micro-LED. The tensile stress of the first bonding support layer is greater than or equal to 18 MPa.

Abstract: A wafer carrier including a rotation axis, a center flat region, a wafer distributing region and a plurality of wafer accommodating grooves is provided. The rotation axis passes through a center of the center flat region and a surface of the center flat region is a flat surface. The wafer distributing region surrounds the center flat region. The plurality of wafer accommodating grooves are disposed in the wafer distributing region and arranged in a single virtual loop. A diameter of each of the wafer accommodating grooves is D, and a radius of the center flat region is larger than 0.5D. A wafer carrier and a metal organic chemical vapor deposition apparatus using any of the above two wafer carriers are further provided.

Abstract: A light-emitting display unit including first to third metal layers, first to second insulation layers and micro light-emitting devices is provided. The first metal layer has conductive patterns. The second metal layer has transfer patterns. The third metal layer has pad patterns. The second metal layer is located between the first metal layer and the third metal layer. A distribution density of the first metal layer is less than that of the second metal layer, and greater than that of the third metal layer. The first insulation layer is disposed between the first metal layer and the second metal layer. The second insulation layer is disposed between the second metal layer and the third metal layer. The micro light-emitting devices are disposed on one side of the first metal layer away from the second metal layer, and electrically bonded to the conductive patterns. A display apparatus adopting the light-emitting display unit is also provided.

Abstract: A display apparatus includes a first circuit board and a plurality of first light emitting display units. The first circuit board has a first surface and a first board edge connected to the first surface. The first light emitting display units are disposed on the first surface. Each of the first light emitting display units has a plurality of first pixel areas and includes a first driving circuit layer electrically bonded to the first circuit board and a plurality of first light emitting devices. The first light emitting devices are disposed on one side of the first driving circuit layer away from the first circuit board and are electrically bonded to the first driving circuit layer. At least one of the first light emitting display units has a first side edge parallel to the first board edge. The first board edge is drawn back from the first side edge.

Abstract: A spliced micro light-emitting-diode display panel includes multiple circuit boards spliced with each other and multiple micro light-emitting-diode modules. Each circuit board includes at least one driver IC. The micro light-emitting-diode modules are disposed separately on each circuit board and are electrically connected to the driver IC. Each micro light-emitting-diode module includes multiple light-emitting-diode units arranged in an array. On each circuit board, the driver IC drives the light-emitting-diode units of the micro light-emitting-diode modules to emit light. There is a first gap between any adjacent two of the light-emitting-diode units on any adjacent two of the circuit boards, and there is a second gap between any adjacent two of the light-emitting-diode units on each micro light-emitting-diode module, and the first gap is smaller than the second gap.

Abstract: A micro light emitting diode (micro LED) display and a controller thereof are provided. The micro LED display includes a circuit board, a plurality of micro LED devices, and the controller. The micro LED devices are disposed on a first surface of the circuit board. The micro LED devices respectively have a plurality of pixel arrays. The controller is carried by the circuit board and is configured to transmit a plurality of control signals to respectively control display statuses of the pixel arrays of the micro LED devices.

Abstract: A display apparatus including at least one driving circuit board, a plurality of light-emitting units, and a light-shielding layer is provided. The light-emitting units are disposed on a surface of the at least one driving circuit board and respectively have a plurality of pixel areas. The light-shielding layer is disposed on the at least one driving circuit board and disposed between the light-emitting units. The light-emitting units each have a circuit layer and a plurality of micro light-emitting devices. The circuit layer is electrically bonded to one of the at least one driving circuit board. The plurality of micro light-emitting devices are disposed on a side of the circuit layer away from the at least one driving circuit board and electrically bonded to the circuit layer. The micro light-emitting devices are respectively located in the pixel areas. A method of fabricating the display apparatus is also provided.

Abstract: The micro light-emitting diode (LED) display matrix module of the disclosure includes a multilayer circuit layer, multiple micro LEDs, and an insulating flat layer. The multilayer circuit layer includes a top circuit layer and a bottom circuit layer. The bottom circuit layer includes multiple pads. The micro LEDs are disposed on the top circuit layer of the multilayer circuit layer and define multiple light-emitting units. Each of the light-emitting units includes three of the micro LEDs that are separated from each other. The light-emitting units are arranged in a matrix of m columns and n rows to define multiple pixel regions, and quantity of the pads is equal to 3m+n. An orthographic projection of each of the micro LEDs on the bottom circuit layer completely overlaps the corresponding pad. The insulating flat layer covers the top circuit layer of the multilayer circuit layer and the micro LEDs.

Abstract: A micro LED display panel includes a display area, a plurality of micro light-emitting elements and a plurality of micro control elements. The plurality of micro light-emitting elements is disposed in the display area and include a plurality of first color micro LEDs and a plurality of second color micro LEDs. A light wavelength of each of the first color micro LEDs is different from a light wavelength of each of the second color micro LEDs. The plurality of micro control elements is disposed in the display area, and include a plurality of first color micro circuit-chips and a plurality of second color micro circuit-chips. The plurality of first color micro circuit-chips control the plurality of first color micro LEDs, and the plurality of second color micro circuit-chips control the plurality of second color micro LEDs.

Abstract: A micro-LED display includes a casing, a light-transmitting cover, a micro-LED array substrate, a circuit board, and at least one functional component. The light-transmitting cover is disposed on the casing and has a display area, a non-display area, and a plurality of first vias. The first vias are located in the display area. The micro-LED array substrate is disposed between the light-transmitting cover and the casing. The micro-LED array substrate has a plurality of second vias overlapped with the first vias in an orthogonal projection direction. The circuit board is disposed between the micro-LED array substrate and the casing, and the circuit board has a functional component disposing area overlapped with the display area in the orthogonal projection direction. The functional component is disposed in the functional component disposing area. The functional component is overlapped with the second vias in the orthogonal projection direction.

Abstract: A micro-electronic element transfer apparatus including a first conveyer portion, a second conveyer portion, and a light source device is provided. The first conveyer portion is configured to output a plurality of micro-electronic elements. The second conveyer portion includes a first rolling component and a substrate. The substrate is disposed on the first rolling component and is moved through rolling of the first rolling component. A plurality of bumps are disposed on the substrate. The light source device is configured to irradiate the bumps for heating, and the bumps generate a phase transition. When the micro-electronic elements are outputted from the first conveyer portion, a connection force between the micro-electronic elements and the first conveyer portion is less than a connection force between the micro-electronic elements and the bumps. The micro-electronic elements are respectively bonded to the bumps. A micro-electronic element transfer method is also provided.

Abstract: A micro device includes an epitaxial structure, an overcoat layer, and a first light-guiding structure. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface. The insulating layer covers at least the bottom surface and part of the peripheral surface of the epitaxial structure. The overcoat layer includes a contact portion and an extension portion. The contact portion conformally covers the insulating layer and the peripheral surface and the bottom surface of the epitaxial structure, and the extension portion connects the contact portion and extends in a direction away from the peripheral surface. The display apparatus includes a circuit substrate and a plurality of the above-mentioned micro devices. The micro devices are disposed and are correspondingly electrically connected to the first pads and the second pads of circuit substrate.

Abstract: A method for fabricating a micro light-emitting diode display is provided. The method includes disposing a plurality of micro light-emitting diodes on a carrier; transferring the micro light-emitting diodes from the carrier to a display substrate and disposing the micro light-emitting diodes in a plurality of pixels of the display substrate; subjecting the micro light-emitting diodes to a pre-bonding process to electrically connect the micro light-emitting diodes to the display substrate; subjecting the micro light-emitting diodes pre-bonded to the display substrate to a first detection process, thereby identifying whether a faulty micro light-emitting diode is present or not; and, subjecting the micro light-emitting diodes to the main bonding process after the first detection process.

Abstract: A transparent display panel with a light-transmitting substrate, a plurality of top-emitting micro light emitting diodes, a plurality of bottom-emitting micro light emitting diodes, and a light shielding layer. The light transmissive substrate has a surface. These top-emitting micro light emitting diodes and these bottom-emitting micro light emitting diodes are disposed on the surface of the light transmissive substrate. The bottom-emitting micro light emitting diodes has an epitaxial structure and a light shielding member, the epitaxial structure has a pair of upper and lower surfaces on the opposite sides, the lower surface faces toward the light transmissive substrate, and the light shielding member is disposed on the upper surface to shield the light emitted by the bottom-emitting micro light emitting diodes towards the upper surface.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.

Abstract: A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.

Abstract: A micro light emitting diode includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure has a surface. The first electrode and the second electrode are respectively disposed on the surface of the epitaxial structure. The second electrode is located outside the first electrode, and the second electrode is symmetrically disposed with respect to a geometric center of the epitaxial structure.

Abstract: An alignment structure is provided. The alignment structure includes a substrate, an alignment portion, and an extension portion. The alignment portion is disposed on the substrate. The extension portion is disposed on the substrate. The extension portion at least partially surrounds the alignment portion and is spaced apart from the alignment portion by a void. A side of the extension portion adjacent to the alignment portion and a side of the alignment portion adjacent to the extension portion are conformal to each other.