Abstract: The present invention relates to a fusion protein comprising a fusion polypeptide of E6 and E7 of a human papilloma virus, a signal peptide for secreting the polypeptide out of the cell, and an immune enhancing peptide for a subject; a polynucleotide encoding the fusion protein; and a vector containing the polynucleotide. The present invention further relates to a pharmaceutical composition comprising the fusion protein or the vector; and a method for treating a disease caused by a human papilloma virus using the pharmaceutical composition.

Abstract: An apparatus and a method for an Envelope Elimination and Restoration (EER) power transmitter are provided. The apparatus includes a signal separator for splitting a transmit signal to an amplitude component and a phase component, an orthogonal modulator for modulating the phase component into a Radio Frequency (RF) signal, a bias modulator for linearly amplifying the amplitude component, for determining a bias voltage according to a magnitude of the amplitude component, and for providing a current generated using the determined bias voltage to a high-efficiency power amplifier and the high-efficiency power amplifier for amplifying the RF signal using the linearly amplified amplitude component as a drain bias voltage and using the generated current as a drain bias current.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: Provided are hydroxycucurbituril derivatives, their preparation methods and uses. The hydroxycucurbituril derivative is easy to further functionalize with enhanced solubility in common solvents, thereby providing wider applications.

Abstract: The inventive molecular transporter compound shows significantly high permeability through a biological membrane such as a plasma membrane, nuclear membrane and blood-brain barrier, and accordingly, can be effectively used in delivering various biologically active molecules.

Abstract: The inventive molecular transporter compound shows significantly high permeability through a biological membrane such as a plasma membrane, nuclear membrane and blood-brain barrier, and accordingly, can be effectively used in delivering various biologically active molecules.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: The present invention relates to a method of forming an ohmic electrode in a semiconductor light emitting element, comprising: forming a semiconductor layer having a light emitting structure on a substrate, sequentially laminating a bonding layer, a reflective layer and a protective layer on the semiconductor layer, and forming an ohmic electrode by performing a heat treatment process to form ohmic bonding between the semiconductor layer and the bonding layer and to form an oxide film on at least a portion of the protective layer; and a semiconductor light emitting element using the ohmic electrode. According to the present invention, since a reflective layer is formed of Ag, Al and an alloy thereof with excellent light reflectivity, the light availability is enhanced. Further, since contact resistance between a semiconductor layer and a bonding layer is small, it is easy to apply large current for high power.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: A method and apparatus for transmitting and receiving a signal in a wireless communication system. The wireless communication system includes a transmitter with at least four transmit antennas and a receiver with at least one receive antenna. Space Frequency Block Coding (SFBC) processes are performed for input signals on a basis of two antenna pairs. Signal blocks whose number corresponds to the number of transmit antennas are output. A Space Time Block Coding (STBC) process is performed for the signal blocks generated according to the antenna pairs. Signals carried by single carriers are transmitted through the at least four transmit antennas mapped to the signal blocks.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: The present invention relates to a flowering-time and/or stem elongation regulator isolated from rice, which is selected from OsMADS50, OsMADSS1, OsMADS56, OsMADS14, OsTRX1, OsVIN1, OsCOL4 and OsCOLS, a DNA construct containing the regulator, a transgenic plant, a part thereof, and plant cell transformed with the DNA construct, and method to control flowering-time and/or stem elongation using the regulator. In the present invention, the flowering-time and/or stem elongation can be controlled, and thereby, various agricultural benefits obtained.

Abstract: The present invention relates to a vaccine enhancing the protective immunity to Hepatitis C virus using plasmid DNA and recombinant adenovirus, more particularly to a vaccine consisting of ? core-E1-E2 expressing DNA vaccine, nonstructural protein NS3 and NS4 expressing DNA vaccine, nonstructural protein NS5 expressing DNA vaccine and recombinant adenovirus vaccine, and method for administration of the vaccine by priming with the DNA vaccines described above and boosting with the recombinant adenovirus vaccine thereby enhancing the protective immunity to Hepatitis C virus.

Abstract: A high-throughput device is structured to perform a continuous-flow reaction, e.g., a polymerase chain reaction (PCR) requiring repetitive temperature control in a timely fashion.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: The present invention relates to a method of protecting cells against damage caused at least in part by apoptosis, comprising administering to subjects a therapeutic dose of leumorphin having cytoprotective activity, and a pharmaceutical composition comprising an effective amount of leumorphin having a cytoprotective activity.

Abstract: A solid oxide fuel cell module of the invention, a fuel cell using the same and a manufacturing method thereof are provided. The solid oxide fuel cell module is easily manufacturable, economical, easily sealable and high in current density. A support is made of a first catalytic material. A first fluid flow part has flow passages formed inside the support. A second fluid flow part has a plurality of pillars protruded from an outer surface of the support and flow passages formed between the pillars. An electrolyte layer is coated on the outer surface of the support excluding top surfaces of the pillars. A coating layer is made of a second catalytic material and formed on a top surface of the electrolyte layer excluding the pillars. Also, a current collecting layer is coated on the top surfaces of the pillars.

Abstract: The present invention relates to a bioadhesive derived from mussel. In particular, it relates to a novel MGFP-3A MUTANT(Mytilus galloprovincialis foot protein type-3A MUTANT) protein and a recombinant protein that is a hybrid of MGFP-3A MUTANT, FP(Foot Protein)-1 and MGFP-5(Mytilus galloprovincialis foot protein type-5). According to the present invention, the adhesive protein can be economically produced in large scale and can be used instead of chemical adhesives.