Abstract: In a reflective or transflective LCD comprising a TFT plate and a color filter plate with a LC layer of negative dielectric anisotropy inserted therebetween, a pixel electrode and a common electrode consisting of a plurality of strips are provides on the TFT plate to produce a fringe field applied on the LC layer for a phase difference that is compensated by a compensator. A scattering film is introduced in the LCD to enhance the brightness. A polarizer is arranged with its polarization direction at an angle from the extension axis of the compensator.

Abstract: A structure of a thin film transistor (TFT) liquid crystal display (LCD) device with a convex structure and a manufacturing method thereof are provided. The manufacturing method includes steps of: providing an insulation substrate; forming a first conductor layer on the insulation substrate; removing portions of the first conductor layer to define a first conductor structure and a first convex structure, wherein the first convex structure is posited on an area of pixel; forming an insulation layer and a semiconductor layer sequentially on the first conductor structure and the insulation substrate having the first conductor layer; removing portions of the semiconductor layer to define a semiconductor structure; forming a second conductor layer on the semiconductor structure; and removing portions of the second conductor layer to define a second conductor structure.

Abstract: A structure of a thin film transistor (TFT) liquid crystal display (LCD) device including plural conductive beads and a manufacturing method thereof are provided. The manufacturing method includes the steps of (a) providing an insulated substrate, (b) forming a TFT structure and a transparent electrode structure on the insulated substrate wherein the transparent electrode structure is connected to a source/drain region of the TFT structure, and (c) forming a thin film structure including plural conductive beads on the transparent electrode structure.

Abstract: There is provided a reflection type/transflection type thin film transistor liquid crystal display, including an insulating substrate, a thin film transistor formed on the insulating substrate, a transparent electrode made of indium-tin-oxide formed on the thin film transistor and electrically contacted with a source region and a drain region of the thin film transistor, and a curved conducting structure with an inclination of 3 to 20 degrees formed on the transparent electrode.

Abstract: Disclosed is a method for controlling profile formation of low taper angle in metal thin film electrode applicable to manufacture of thin film transistor liquid crystal display in order for insulator capably deposited on the metal thin film electrode with good step coverage, by which a double-layer structure for metal electrode is formed with two metals on a substrate and then etched with a wet etching solution having a higher etching rate to the upper layer metal than that to the lower layer metal of the double-layer structure. By employing different etching rate and thickness to the double-layer metals, a metal electrode is formed with a very low taper angle and thus can be deposited with insulator of good step coverage thereon.

Abstract: Disclosed is a metal contact structure and method for thin film transistor array in liquid crystal display in order to prevent source/drain electrode metal layer from plasma damage and oxide insulator formation thereon during contact hole process, such that low contact resistance is obtained between the source/drain electrode metal layer and top-ITO conductive layer, wherein a thin film transistor structure is formed on a substrate and a metal oxide conductive film is covered on the source/drain electrode metal layer of the thin film transistor structure before an insulative passivation layer is deposited over the thin film transistor structure.