Abstract: A ferroelectric memory having a plurality of ferroelectric memory cells, each ferroelectric memory cell including a ferroelectric capacitor is disclosed. The ferroelectric memory includes read and write lines and a plurality of ferroelectric memory cell select buses, one select bus corresponding to each of the ferroelectric memory cells. Each of the ferroelectric memory cells includes first and second gates for connecting the ferroelectric memory cell to the read line and the write line, respectively, in response to signals on the ferroelectric memory cell select bus corresponding to that ferroelectric memory cell. A write circuit causes a charge to be stored in the ferroelectric capacitor of the ferroelectric memory cell currently connected to the write line, the charge having a value determined by a data value having at least three states.

Abstract: An illuminating system having an electronic shield illuminating apparatus comprises a semiconductor light-emitting source, a reflector, an electronic shield, a shield driving control circuit, and a projection lens. The reflector is intended for reflecting a portion of the light reflected by the semiconductor light-emitting source, and has a reflecting surface facing the semiconductor light-emitting source. The electronic shield is intended for generating different shield patterns to mask the light emitted by the semiconductor light-emitting source, and the light reflected by the reflector, and has a main surface facing the semiconductor light-emitting source and the reflecting surface of the reflector. The shield driving control circuit drives the electronic shield to generate different shield patterns in response to a signal information. The projection lens projects the light passing through the electronic shield.

Abstract: A double-layer liquid crystal lens comprises a first transparent substrate, a second transparent substrate, a third transparent substrate, a first liquid crystal layer interposed between the first and the second transparent substrates, and a second liquid crystal layer interposed between the second and the third transparent substrates. The upper side of the first transparent substrate is provided with a transparent ITO electrode and an alignment film disposed on the transparent electrode. Each of the upper and the lower sides of the second transparent substrate is provided with a alignment film. The upper side of the third transparent substrate is provided with an apertured electrode while the lower side thereof is provided with an alignment film. The first and the third transparent substrates are made of glass while the second transparent substrate is made of plastic material.

Abstract: A memory cell comprising a ferroelectric capacitor, a variable impedance element and a conductive load is disclosed. The ferroelectric capacitor, characterized by first and second polarization states, is connected between a control terminal and a first switch terminal. The variable impedance element has an impedance between the first and second switch terminals that is determined by a signal on a control terminal. The conductive load is connected between a first power terminal and the first switch terminal. The second switch terminal is connected to a second power terminal. When a potential difference is applied between the first and second power terminals, a potential on the first switch terminal varies in a manner determined by the state of polarization of the ferroelectric capacitor.

Abstract: The present invention discloses a method for manufacturing a silicon material with high purity, and the method comprises the following steps of: selecting high purity quartz as a raw material; cleaning and comminuting the quartz; choosing the particle size of the quartz between 20 mm and 80 mm by an optical analyzer; purifying the quartz; melting the quartz in a metallurgical furnace; proceeding carbothermal reduction and post-refining to the quartz so as to obtain liquid silicon; draining the liquid silicon into a ladle through a tap hole of the metallurgical furnace; removing impurities of the liquid silicon in the ladle by Moist reduction Gas Blowing and Slag Treating; pouring the liquid silicon into a casting area of a crystal growth furnace; proceeding Directional Solidification to the liquid silicon in the casting area so as to obtain a solid silicon material.

Abstract: A double-layer liquid crystal lens comprises a first transparent substrate, a second transparent substrate, a third transparent substrate, a first liquid crystal layer interposed between the first and the second transparent substrates, and a second liquid crystal layer interposed between the second and the third transparent substrates. The upper side of the first transparent substrate is provided with a transparent ITO electrode and an alignment film disposed on the transparent electrode. Each of the upper and the lower sides of the second transparent substrate is provided with a alignment film. The upper side of the third transparent substrate is provided with an apertured electrode while the lower side thereof is provided with an alignment film. The first and the third transparent substrates are made of glass while the second transparent substrate is made of plastic material.

Abstract: A method and an apparatus for estimating a location of a terminal are provided. The method includes: receiving at least one base station signal from each of at least one base station; computing received signal information with respect to the received signal; and estimating the location of the terminal based on signal transmission direction information associated with the base station and the computed received signal information. The present invention can accurately estimate the location of the terminal based on directional information of base station signals.

Abstract: A location based service method and location based service system is provided. The location based service method includes: making requests for position determination of a client terminal according to a first position determination method and a second position determination method, in response to a location based service request; receiving a position determination result according to the first position determination method, and generating first location data including additional information which corresponds to the position determination result according to the first position determination method; providing the client terminal with the first location data; receiving a position determination result according to the second position determination method, and generating second location data, the second location data being refined first location data; and providing the client terminal with the second location data.

Abstract: A mobile communication terminal capable of position determination, including: a base station information recorder recording detailed base station information corresponding to at least one base station; a base station signal receiver receiving base station signal information from a reference base station at a predetermined interval; a base station information reader reading the detailed base station information with respect to a base station corresponding to the received base station signal information, from the base station information recorder; and a position determiner determining a position of the mobile communication terminal by using the received base station signal information and the read detailed base station information.

Abstract: An apparatus for heating and cooling an article is provided. The apparatus comprises an enclosure having top, bottom, and side walls and an entrance and an exit. A first belt system comprising one or more belts extends from a loading position through a portion of the enclosure. The first belt system has a loading end and an unloading end. A second belt system comprising one or more belts extends from the unloading end of the first belt system to an unloading position. The second belt system has a loading end and an unloading end. The enclosure includes one or more heating sources positioned adjacent the first belt system for heating the first belt system.

Abstract: An apparatus for heating and cooling an article is provided. The apparatus comprises an enclosure having top, bottom, and side walls and an entrance and an exit. A first belt system comprising one or more belts extends from a loading position through a portion of the enclosure. The first belt system has a loading end and an unloading end. A second belt system comprising one or more belts extends from the unloading end of the first belt system to an unloading position. The second belt system has a loading end and an unloading end. The enclosure includes one or more heating sources positioned adjacent the first belt system for heating the first belt system.

Abstract: A method for operating a data processing system to control a device under test and to collect data from that device. The user is provided with a first display having a list of elementary tasks having first and second tasks from which a user selects one or more elementary tasks. The first task applies a signal to the device under test when that task is executed and the second task causes the data processing system to receive data from the device under test. The user edits task parameters using a second display to provide a current test definition. In response to user input, the data processing system executes each of the tasks in the current test definition and stores any data received from the device under test in a data set that includes the current test definition and which is displayed in a third display.

Abstract: A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO2 or Si3N4. The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode. The bottom electrode is constructed from a layer of platinum which is bonded to the silicon substrate by a layer of metallic oxide. The metallic oxide does not diffuse into the platinum; hence, a thinner layer of platinum may be utilized for the electrode. This reduces the vertical height of the capacitor and other problems associated with diffusion of the layer used to bond, the bottom electrode to the substrate surface.

Abstract: A method for constructing an electrode on a silicon substrate in which the electrode will be subjected to high temperatures during subsequent processing steps. A titanium oxide layer is deposited on the silicon substrate and annealed at a temperature higher than any subsequent temperature to which the titanium oxide layer will be subjected. The electrode is then deposited on the titanium oxide layer. The electrode is preferably platinum or a titanium/platinum composition. The platinum is also annealed to a temperature higher than any subsequent temperature to which the electrode will be subjected. In the preferred embodiment of the present invention, the electrode is constructed in a trench that is etched in a layer of metallic titanium that is deposited over the titanium oxide layer.

Abstract: A plumbing assembly maintains temperature equilibrium of a hydronic heating system irrespective of the type of heat source used. The assembly facilitates all control methods characteristic of such heating systems through use of a heat loop, a pair of heat traps, a balancing valve and a controller. The plumbing assembly includes a zone supply conduit and a zone return conduit. The heat loop includes a first conduit with a supply end and a return end. A bypass valve is coupled between the supply end and the return end for controlling the flow of fluid through the heat loop. Two heat traps are provided, which comprise a first looped conduit connected to the first conduit upstream from the bypass valve, and a second looped conduit connected to the first conduit downstream from the bypass valve. An injection pump connected downstream from the first looped conduit draws fluid from the heat source injecting it into the system via the supply conduit.

Abstract: An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively.

Abstract: A ferroelectric memory cell for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400° C. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer. One of the contacts typically includes a platinum electrode. The other contact may include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.

Abstract: A ferroelectric memory cell for storing information and a method for fabricating the same. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. During the fabrication process, the memory cell is subjected to an annealing operation in the presence of hydrogen at a second temperature and a packaging operation at a third temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than the second and third temperatures. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer.

Abstract: A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of a FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.

Abstract: A method for constructing a device having a bottom electrode in contact with a layer of a ferroelectric dielectric material. In the method of the present invention, a layer of a field ferroelectric material is deposited on a substrate and etched to form a trench in which the bottom electrode is constructed. The bottom electrode is then deposited and a layer of the ferroelectric dielectric material is deposited over the bottom electrode and at least a portion of the field ferroelectric material. The ferroelectric layers are deposited in a perovskite state. These layers are etched back to the substrate in those areas that are outside of the device.