Abstract: The disclosed technology includes device, systems, techniques, and methods for amplifying a complex modulated signal with a mixed-signal power amplifier. A mixed-signal power amplifier may include an input network for splitting an input signal to multiple signals with corresponding phase and amplitude offsets, a main power amplification path including at least an analog power amplifier for amplifying a first signal, one or more auxiliary power amplification paths including at least one digitally controlled analog power amplifier in each path for amplifying a second signal, and an output network for combining the two amplified signals. The main power amplification path and the auxiliary power amplification paths can operate together to achieve load modulation to enhance the overall power amplifier efficiency at power back-off mode and the overall power amplifier linearity. The disclosed technology further includes transmission systems incorporating the mixed-signal power amplifier.

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

Abstract: Methods for etching tungsten and other metal or metal-containing films using a nitrogen-containing etchant gas are provided. The methods involve exposing the film to a continuous wave (CW) plasma and switching to a pulsed plasma toward the end of the etching operation. The pulsed plasma has a lower concentration of nitrogen radicals and can mitigate the effects of nitridation on the tungsten surface. In some embodiments, subsequent deposition on etched surfaces is performed with no nucleation delay. Apparatuses for performing the methods are also provided.

Abstract: Methods for evaluating synergy of modification and removal operations for a wide variety of materials to determine process conditions for self-limiting etching by atomic layer etching are provided herein. Methods include determining the surface binding energy of the material, selecting a modification gas for the material where process conditions for modifying a surface of the material generate energy less than the modification energy and greater than the desorption energy, selecting a removal gas where process conditions for removing the modified surface generate energy greater than the desorption energy to remove the modified surface but less than the surface binding energy of the material to prevent sputtering, and calculating synergy to maximize the process window for atomic layer etching.

Abstract: Embodiments of the present disclosure can include a method for isolating a contaminate from water comprising: introducing a plurality of aluminum-doped nanoparticles to water, the water comprising the contaminate; contacting the plurality of aluminum-doped nanoparticles with the contaminate to form contaminate-adsorbed nanoparticles; and isolating the contaminate-adsorbed nanoparticles by applying a magnetic field to the water.

Abstract: Methods for evaluating synergy of modification and removal operations for a wide variety of materials to determine process conditions for self-limiting etching by atomic layer etching are provided herein. Methods include determining the surface binding energy of the material, selecting a modification gas for the material where process conditions for modifying a surface of the material generate energy less than the modification energy and greater than the desorption energy, selecting a removal gas where process conditions for removing the modified surface generate energy greater than the desorption energy to remove the modified surface but less than the surface binding energy of the material to prevent sputtering, and calculating synergy to maximize the process window for atomic layer etching.

Abstract: Disclosed herein are media for culture of cells, tissues, and/or organs. The media formulations disclosed herein can be used to support growth, viability, and/or function of one or more than one cell type, tissue, or organ. In some embodiments, one or more cell types, tissues, organ devices, and/or organs are contacted with a disclosed culture medium under conditions sufficient to support growth, viability, and/or function of the cell types, tissues, and/or organs. The disclosed media can be used in methods of culturing multiple cell types, and in some examples, is used in a platform device including one or more organ devices, for example, by circulating the medium through the one or more organ devices in the platform.

Abstract: Described herein is a method of detecting fault conditions in a multiplexed multi-heater-zone heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus.

Abstract: Disclosed are methods and apparatuses for recirculating gas in an equipment front end module (“EFEM”), including the ability to provide a gas during recirculation and control the gas flow, pressure, and composition of the environment in the EFEM during recirculation.

Abstract: A system including: a photovoltaic (PV) cell; a radio frequency (RF) rectifier; a DC-DC converter connected to an output of the RF rectifier; and a control circuit configured to control an operation of the DC-DC converter, and configured to receive operating power from the PV cell.

Abstract: Methods and apparatuses suitable for depositing low hydrogen content, hermetic, thin encapsulation layers at temperatures less than about 300° C. are provided herein. Methods involve pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300° C.

Abstract: Described herein are FasL-engineered biomaterials, as well as methods of making and using such FasL-engineered biomaterials, such as for immunomodulation, such as for inducing immunosuppression and specific immune tolerance, such as for preventing or reducing the risks of rejection of cellular or tissue grafts and/or the treatment of autoimmune disorders such as Type I diabetes. In specific embodiments, the FasL-engineered biomaterials are biotinylated microgels bound to SA-FasL.

Abstract: A method for performing atomic layer etching (ALE) on a substrate is provided, including the following operations: performing a surface modification operation on a substrate surface, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer, wherein a bias voltage is applied during the surface modification operation, the bias voltage configured to control a depth of the substrate surface that is converted by the surface modification operation; performing a removal operation on the substrate surface, the removal operation configured to remove at least a portion of the modified layer from the substrate surface, wherein removing the portion of the modified layer includes applying thermal energy to effect desorption of the portion of the modified layer. A plasma treatment can be performed to remove residues from the substrate surface following the removal operation.

Abstract: A loading station for a substrate processing system includes first and second vertically-stacked loading stations. The first loading station includes a first airlock volume and first and second valves arranged at respective ends of the first loading station. The first and second valves are configured to selectively provide access to the first airlock volume and include first and second actuators, respectively, configured to open and close the first and second valves, and the first and second actuators extend downward from the first loading station. The second loading station includes a second airlock volume and third and fourth valves arranged at respective ends of the second loading station. The third and fourth valves are configured to selectively provide access to the second airlock volume and include third and fourth actuators, respectively, configured to open and close the third and fourth valves.

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

Abstract: Methods and systems for the biological conversion of pretreated or solubilized coal or waste coal into biofuels. Coal (10) may be pretreated perhaps in a pretreatment reactor (13). Pretreated coal or even solubilized coal may be introduced into a processing reactor such as a bioreactor (16) containing a plurality of microorganisms (9) such as oleaginous microorganisms which can convert at least some of the pretreated or solubilized coal into lipids (19) or biomass (18), which then may be used directly or as a precursor for various products such as biofuels, feedstock, or the like.

Abstract: Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may include forming a multi-layer dopant-containing film on the substrate, forming a capping film comprising a silicon carbide material, a silicon carbonitride material, silicon oxycarbide material, silicon carbon-oxynitride, or a combination thereof, the capping film located such that the multi-layer dopant-containing film is located in between the substrate and the capping film, and driving dopant from the dopant-containing film into the fin-shaped channel region. Multiple dopant-containing layers of the film may be formed by an atomic layer deposition process which includes adsorbing a dopant-containing film precursor such that it forms an adsorption-limited layer on the substrate and reacting adsorbed dopant-containing film precursor.

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

Abstract: A spatial atomic layer deposition (ALD) system is disclosed. The system includes a chamber that includes a plurality of zones oriented along a track. Also included is a shuttle that is configured to support the substrate and transport the substrate to each of the plurality of zones to enable deposition of a thin film. The shuttle includes an RF power electrode and an RF ground electrode coupled to an RF power source. The RF electrode and the RF ground electrode are each embedded in the shuttle, such that power provided by the RF power source to the shuttle moves with the shuttle to each of the zones. The RF power source is configured to be activated in synchronization with moving the shuttle to one of the zones.