Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.

Abstract: A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low frequency RF signal and the high frequency RF signal to generate a plurality of combined RF signals for the stations. Amount of low frequency power delivered to one of the stations depends on wafer bow, such as non-flatness of a wafer. A bowed wafer decreases low frequency power delivered to the station in a multi-station chamber with a common RF source. A shunt inductor is coupled in parallel to each of the stations to increase an amount of current to the station with a bowed wafer. Hence, station power becomes less sensitive to wafer bow to minimize wafer bowing.

Abstract: Metal-carbon nanotube composites having nanotubes which are uniformly dispersed within the metal matrix of the composite, and which are unbundled or substantially unbundled, have high lengths, and which can be controllably aligned are disclosed herein. Such metal-carbon nanotube composites can show improved electrical, thermal, and mechanical properties, as compared to a pristine metal or metal alloy which does not contain nanotubes dispersed therein. Facile and scalable methods of fabricating such metal-nanocarbon composites are also disclosed.

Abstract: Polypropylene-coated functionalized multiwall carbon nanotubes (PP/f-MWNT) comprising functionalized multiwall carbon nanotubes (f-MWNT) in an amount of from about 0.5 wt. % to about 80 wt. %, based on the total weight of the PP/f-MWNT; and polypropylene (PP) in an amount of from about 20 wt. % to about 99.5 wt. %, based on the total weight of the PP/f-MWNT. A method of making PP/f-MWNT comprising (a) contacting pristine multiwall carbon nanotubes (p-MWNT) with nitric acid to produce f-MWNT; (b) contacting at least a portion of the f-MWNT with a first solvent to form a f-MWNT dispersion; (c) contacting PP with a second solvent to form a PP solution; (d) contacting at least a portion of the f-MWNT dispersion with at least a portion of the PP solution to form a PP and f-MWNT suspension; and (e) drying at least a portion of the PP and f-MWNT suspension to form the PP/f-MWNT.

Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer is formed conformally over sidewalls and horizontal surfaces of protruding features on a substrate. A passivation layer is then formed over tin oxide on the sidewalls, and tin oxide is then removed from the horizontal surfaces of the protruding features without being removed at the sidewalls of the protruding features. The material of the protruding features is then removed while leaving the tin oxide that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers. Hydrogen-based and chlorine-based dry etch chemistries are used to selectively etch tin oxide in a presence of a variety of materials. In another method a patterned tin oxide hardmask layer is formed on a substrate by forming a patterned layer over an unpatterned tin oxide and transferring the pattern to the tin oxide.

Abstract: A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.

Abstract: After forming a material stack including a gate dielectric, a work function metal and a cobalt gate electrode in a gate cavity formed by removing a sacrificial gate structure, the cobalt gate electrode is recessed by oxidizing the cobalt gate electrode to provide a cobalt oxide layer on a surface of the cobalt gate electrodes and removing the cobalt oxide layer from the surface of the cobalt gate electrodes by a chemical wet etch. The oxidation and oxide removal steps can be repeated until the cobalt gate electrode is recessed to any desired thickness. The work function metal can be recessed after the recessing of the cobalt gate electrode is completed or during the recessing of the cobalt gate electrode.

Abstract: Methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a fluorine-free tungsten precursor and hydrogen in cycles of temporally separated pulses, are provided. Some methods involve depositing fluorine-free tungsten by sequential CVD without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface. Methods also include depositing a tungsten layer using a reducing agent and fluorine-free tungsten-containing precursor and depositing bulk tungsten in sequential CVD cycles of alternating pulses of hydrogen and a tungsten-containing precursor.

Abstract: Lithium-ion batteries are provided that variously comprise anode and cathode electrodes, an electrolyte, a separator, and, in some designs, a protective layer. In some designs, at least one of the electrodes may comprise a composite of (i) Li2S and (ii) conductive carbon that is embedded in the core of the composite. In some designs, the protective layer may be disposed on at least one of the electrodes via electrolyte decomposition. Various methods of fabrication for lithium-ion battery electrodes and particles are also provided.

Abstract: In an embodiment, metal-organic nanowires or nanofibers comprising polymer chains with around 100 or more repeat units are synthesized. The metal-organic nanowires or nanofibers are exposed to a reactive gas at a temperature in excess of around 100° C. and at a pressure in the range from around 0.001 to around 100 atmospheres.

Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.

Abstract: A hybrid generator using a thermoelectric generation and a piezoelectric generation are provided. The hybrid generator includes first and second insulating layers spaced apart from each other; a thermoelectric structure disposed between the first and second insulating layers; a first electrode disposed on the second insulating layer; a piezoelectric structure disposed on the first electrode; a third insulating layer disposed on the piezoelectric structure; and a second electrode disposed on the third insulating layer.

Abstract: Aspects of the disclosed technology provide a method comprising executing different first and second instructions a first and second number of times, respectively, in repeated alternations. The method further comprises measuring spectra of signals emanating as a result of the processor executing the first and second instructions. The method also includes analyzing data indicative of the spectra of the signals to determine side-channel candidate side-band pairs that each have a lower and upper sideband at first and second frequencies, respectively, that are separated by approximately twice the respective alternation frequency. Finally, the method includes identifying a side-channel carrier frequency at a frequency approximately at a midpoint between a side-channel candidate side-band pair's first and second frequency.

Abstract: This disclosure relates to methods and compositions for managing vascular conditions by targeting microRNA. In certain embodiments, the disclosure relates to antisense, RNA interference, and blocking oligonucleotide therapeutic compositions and uses related thereto.

Abstract: A system for determining an alignment of an edge ring on a substrate support includes a robot control module configured to control a robot to place the edge ring onto the substrate support and retrieve the edge ring from the substrate support. An alignment module is configured to determine a plurality of first positions of the edge ring on the robot prior to being placed onto the substrate support and determine a plurality of second positions of the edge ring on the robot subsequent to being retrieved from the substrate support. An edge ring position module configured to determine a centered position of the edge ring relative to the substrate support based on offsets between the plurality of first positions and the plurality of second positions.

Abstract: A system processes data signals consisting of sums of independent signal terms, zero or more of which signal terms may already have been identified, in order to generate one or more additional terms. Deflated versions of the data signals are created by subtracting from the data signals any previously identified signal terms. Additional independent signal terms are computed using a set of reference signals organized into mutually independent partioning support sets. The images of each support set are computed on the data signals. Computed images on a data signal that are non-zero are identified as additional independent signal terms of that data signal.

Abstract: A method for etching features into a silicon containing layer comprising performing a plurality of cycles in a plasma processing chamber is provided. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a precursor into the plasma processing chamber to form a self-limiting monolayer, wherein the precursor comprises a head group component and a tail group component, wherein the tail group component comprises fluorine and carbon, and stopping the flow of the precursor into the plasma processing chamber. The activation phase comprises flowing an activation gas comprising an ion bombardment gas, into the plasma processing chamber, creating a plasma from the activation gas, providing an activation bias to cause ion bombardment of the self-limiting monolayer, wherein the ion bombardment activates the fluorine from the tail group component to etch the silicon containing layer, and stopping the flow of the activation gas.

Abstract: Systems and methods for controlling a swarm of mobile robots are disclosed. In one aspect, the robots cover a domain of interest. Each robot receives a density function indicative of at least one area of importance in the domain of interest, and calculates a velocity vector based on the density function and a displace vector relative to an adjacent robot. Each robot moves to the area of importance according to its velocity vector. In some aspects, the robots together perform a sequence of formations. Each robot mimics a trajectory as part of its performance by switching among a plurality of motion modes. Each robot determines its next motion mode based on a displacement vector relative to an adjacent robot.

Abstract: Heights of carrier ring supports are increased at a side of a wafer that is located closer to a spindle of a plasma chamber. The heights are increased relative to a height of a carrier ring support that is located closer to side walls of the plasma chamber. The increase in the height results in an increase in thickness of a thin film deposited on the wafer to further achieve uniformity in thickness of the thin film across a top surface of the wafer.

Abstract: Arrays containing carbon nanostructure-oxide-metal diodes, such as carbon nanotube (CNT)-oxide-metal diodes and methods of making and using thereof are described herein. In some embodiments, the arrays contain vertically aligned carbon nanostructures, such as multiwall carbon nanotubes (MWCNTs) coated with a conformal coating of a dielectric layer, such as a metal oxide. The tips of the carbon nano-structures are coated with a low work function metal, such as a calcium or aluminum to form a nanostructure-oxide-metal interface at the tips. The arrays can be used as rectenna at frequencies up to about 40 petahertz because of their intrinsically low capacitance. The arrays described herein produce high asymmetry and non-linearity at low turn on voltages down to 0.3 V and large current densities up to about 7,800 mA/cm2 and a rectification ratio of at least about 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, or 60.