Abstract: A packaged integrated circuit device includes a transceiver with one or more oscillators therein. The oscillators can be configured as harmonic or fundamental-frequency oscillators for signal transmitting, or they can be configured as regenerative receivers for signal receiving. An antenna is provided in the package and, preferably, on the same chip IC chip as the transceiver. The antenna includes one or more feeds, which are coupled to the one or more oscillators. A dual-function varactor/envelope detector is provided, which is electrically coupled to the one or more oscillators. A control circuit is provided, which is configured to drive nodes of the transceiver and the dual-function varactor/envelope detector with a first plurality of reference voltages during operation of the transceiver as a radio transmitter (with varactor) and a second plurality of reference voltages during operation of the transceiver as a radio receiver (with envelope detector).

Abstract: A showerhead module adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead module adjustment mechanism being dynamically operable to adjust a planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.

Abstract: Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation. The methods may further include estimating a quantity characteristic of an edge placement error (EPE) of the feature by comparing the one or more quantities characteristic of the IFPF to those in a look-up table (LUT, and/or through application of a multivariate model trained on the LUT, e.g., constructed through machine learning methods (MLM)) which associates values of the quantity characteristic of EPE with values of the one or more quantities characteristics of the IFPF. Thereafter, the initial design layout may be modified based on at the determined quantity characteristic of EPE.

Abstract: Provided are methods of sealing open pores of a surface of a porous dielectric material using an initiated chemical vapor deposition (iCVD) process. In one example method of sealing open pores, since the polymer thin film having a significantly thin thickness may be formed by a solvent-free vapor deposition method without plasma treatment, it is possible to minimize deterioration of characteristics of the dielectric material vulnerable to plasma and a chemical solution.

Abstract: A system and a method for increasing a rate of transfer of data between a radio frequency (RF) generator and a host computer system is described. The rate of transfer of data is increased by implementing dedicated physical layers associated with the RF generator and the host computer system and a dedicated physical communication medium between the RF generator and the host computer system. Moreover, a dual push operation is used between the RF generator and the host computer system. There is no request for data sent from the RF generator to the host computer system or from the host computer system to the RF generator.

Abstract: A method for suppressing arcing in helium distribution channels of an electrostatic chuck in a plasma processing chamber, wherein the electrostatic chuck is connected to a voltage source for providing a chucking voltage and wherein the plasma processing chamber comprises a process gas source, and a plasma power source for transforming the process gas into a plasma is provided. A gas is flowed through the helium distribution channels of an electrostatic chuck to a back side of a wafer. The gas comprises helium and an electronegative gas.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: Disclosed herein are methods and related apparatus for formation of multi-component tungsten-containing films including multi-component tungsten-containing films diffusion barriers. According to various embodiments, the methods involve deposition of multi-component tungsten-containing films using tungsten chloride (WClx) precursors and boron (B)-containing, silicon (Si)-containing or germanium (Ge)-containing reducing agents.

Abstract: A substrate is positioned in exposure to a plasma generation region within a plasma processing chamber. A first plasma is generated within the plasma generation region. The first plasma is configured to cause deposition of a film on the substrate until the film deposited on the substrate reaches a threshold film thickness. The substrate is then exposed to ultraviolet radiation to resolve defects within the film deposited on the substrate. The ultraviolet radiation can be supplied in-situ using either a second plasma configured to generate ultraviolet radiation or an ultraviolet irradiation device disposed in exposure to the plasma generation region. The ultraviolet radiation can also be supplied ex-situ by moving the substrate to an ultraviolet irradiation device separate from the plasma processing chamber. The substrate can be exposed to the ultraviolet radiation in a repeated manner to resolve defects within the deposited film as the film thickness increases.

Abstract: Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.

Abstract: Disclosed herein are devices, systems, and methods for sorting a particle based on a characteristic of a particle.

Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.

Abstract: Li-ion batteries are provided that include a cathode, an anode comprising active particles, an electrolyte ionically coupling the anode and the cathode, a separator electrically separating the anode and the cathode, and at least one hydrofluoric acid neutralizing agent incorporated into the anode or the separator. Li-ion batteries are also provided that include a cathode, an anode comprising active particles, an electrolyte ionically coupling the anode and the cathode, and a separator electrically separating the anode and the cathode, where the electrolyte may be formed from a mixture of an imide salt and at least one salt selected from the group consisting of LiPF6, LiBF4, and LiClO4. Li-ion battery anodes are also provided that include an active material core and a protective coating at least partially encasing the active material core, where the protective coating comprises a material that is resistant to hydrofluoric acid permeation.

Abstract: Various embodiments of the invention are detection systems and methods for detecting call provenance based on call audio. An exemplary embodiment of the detection system can comprise a characterization unit, a labeling unit, and an identification unit. The characterization unit can extract various characteristics of networks through which a call traversed, based on call audio. The labeling unit can be trained on prior call data and can identify one or more codecs used to encode the call, based on the call audio. The identification unit can utilize the characteristics of traversed networks and the identified codecs, and based on this information, the identification unit can provide a provenance fingerprint for the call. Based on the call provenance fingerprint, the detection system can identify, verify, or provide forensic information about a call audio source.

Abstract: A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal.

Abstract: Disclosed herein are degradable materials comprising the reaction product of an oxanorbornadiene crosslinker or derivative thereof and a multivalent nucleophile-terminated compound, wherein the reaction product is a degradable elastic solid capable of entraining cargo. Also disclosed herein are degradable materials comprising a polymeric and hyperbranched crosslinked material made with oxanorbornadiene linkage that can be activated for cleavage at a predetermined rate by addition of a nucleophile. Also disclosed herein are methods of making and using the same.

Abstract: A method for processing a substrate includes providing a substrate with a layer including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium. The method includes depositing a first layer on the layer of the substrate using atomic layer deposition (ALD). The method includes depositing a second layer on the first layer using ALD. Depositing one of the first layer and the second layer includes depositing phosphorus oxide and depositing the other one of the first layer and the second layer includes depositing antimony oxide. The method includes annealing the substrate to drive antimony and phosphorus from the first layer and the second layer into the layer of the substrate to create a junction.

Abstract: Disclosed are polycationic polymers. The polycationic polymers can include a plurality of positively charged centers, each of which is formed by condensation of cyclic bis-electrophile (e.g., a 9-thia/aza/selenabicyclo[3.3.1]nonyl electrophile) with a nucleophile. The resulting polycationic polymers can efficiently bind nucleic acids. The polycations can also exhibit properties of cytotoxicity and DNA transfection with interesting structure-activity characteristics.

Abstract: Various embodiments herein relate to methods and apparatus for etching a feature in a substrate. Often, the feature is etched in the context of forming a DRAM device. The feature is etched in dielectric material, which often includes silicon oxide. The feature is etched using chemistry that includes WF6. Although WF6 is commonly used as a deposition gas (e.g., to deposit tungsten-containing film), it can also be used during etching. Advantageously, the inclusion of WF6 in the etch chemistry can increase the etch rate of the dielectric material, as well as increase the selectivity of the etch. Unexpectedly, these benefits can be realized without any increase in capping.

Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.