Patents Assigned to Rohm and Haas Electronic Materials CMP Holdings, Inc.
  • Patent number: 10722999
    Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm3.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: July 28, 2020
    Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Nitta Haas Inc., Dow Global Technologies LLC
    Inventors: Thomas P. Willumstad, Bainian Qian, Rui Xie, Kenjiro Ogata, George C. Jacob, Marty W. DeGroot
  • Patent number: 10711158
    Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions, such as for semiconductor substrates, comprising an abrasive of one or more dispersions of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and one or more amine carboxylic acids having an isoelectric point (pI) below 5, preferably, acidic amine carboxylic acids or pyridine acids, wherein the compositions have a pH of from 2 to 5. The compositions enable polishing at a high oxide:nitride removal rate ratio.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: July 14, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Naresh Kumar Penta, Zifeng Li
  • Patent number: 10688621
    Abstract: The polishing pad is suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates with a polishing fluid and relative motion between the polishing pad and the at least one of semiconductor, optical and magnetic substrates. The polishing layer has an open-cell polymeric matrix, a polishing surface, a plurality of grooves in the polishing layer. The plurality of projecting land areas are buttressed with a tapered support structure that extends outward and downward from the bottom plurality of projecting land areas. The plurality of projecting land areas have an average width less than average width of the plurality of grooves for decreasing polishing dwell time of the projecting land areas and increasing the debris removal dwell time of the groove areas to a value greater than the polishing dwell time.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: June 23, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Henry Sanford-Crane, Shuiyuan Luo
  • Patent number: 10683439
    Abstract: A chemical mechanical polishing composition, including, as initial components: water; an abrasive; an inorganic salt of an alkali metal or an ammonium salt or mixtures thereof; a benzyltrialkyl quaternary ammonium compound having formula (I): wherein R1, R2 and R3 are each independently chosen from a (C1-C4)alky group; an anion; and, a hydroxyl-containing quaternary ammonium compound having formula (II): wherein R4, R5, R6 is each independently chosen from H and an alkyl group; wherein R7 is an alkylene group; and anions. Also disclosed are methods for polishing a substrate with the chemical mechanical polishing composition.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: June 16, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Yi Guo
  • Patent number: 10640681
    Abstract: A composition and method for chemical mechanical polishing a substrate containing tungsten to at least inhibit corrosion of the tungsten. The composition includes, as initial components: water; an oxidizing agent; a select polyethoxylated tallow amine; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and corrosion of the tungsten is inhibited.
    Type: Grant
    Filed: October 20, 2018
    Date of Patent: May 5, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Jia De Peng, Lin-Chen Ho, Benson Po-Hsiang Chi
  • Patent number: 10640682
    Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; guar gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: May 5, 2020
    Assignee: Rohm and Haas Electronics Materials CMP Holdings, Inc.
    Inventors: Wei-Wen Tsai, Lin-Chen Ho, Cheng-Ping Lee
  • Patent number: 10633557
    Abstract: A process for chemical mechanical polishing a substrate containing tungsten to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics is disclosed. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; xanthan gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; optionally a surfactant; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: April 28, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Lin-Chen Ho, Wei-Wen Tsai, Cheng-Ping Lee
  • Patent number: 10633558
    Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alginate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: April 28, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Wei-Wen Tsai, Lin-Chen Ho, Cheng-Ping Lee
  • Patent number: 10626298
    Abstract: Chemical mechanical polishing compositions contain polyethoxylated amines, phosphoric acid or salts thereof, and positively charged nitrogen containing colloidal silica abrasive particles. The chemical mechanical polishing compositions are used in polishing methods for suppressing the removal rate of amorphous silicon while maintaining tunable oxide to silicon nitride removal rate ratios. The chemical mechanical polishing compositions can be used in front-end-of line semiconductor processing.
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: April 21, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Naresh Kumar Penta, Kwadwo E. Tettey, Matthew Van Hanehem
  • Patent number: 10625393
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for planarizing at least one of semiconductor, optical and magnetic substrates comprising a polishing layer that has a geometric center, and in the polishing layer a plurality of offset circumferential grooves, such as circular or polygonal grooves, which have a plurality of geometric centers and not a common geometric center. In the polishing layer of the present invention, each circumferential groove is set apart a pitch distance from its nearest or adjacent circumferential groove or grooves; for example, the pitch increases on the half or hemisphere of the polishing layer that is farthest from the geometric center of its innermost circumferential groove and decreases on the half of the polishing layer nearest that geometric center. Preferably, the polishing layer contains an outermost circumferential groove that is complete and continuous.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: April 21, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Bainian Qian, Teresa Brugarolas Brufau, Julia Kozhukh
  • Patent number: 10597558
    Abstract: A composition and method for chemical mechanical polishing a substrate containing tungsten to at least inhibit corrosion of the tungsten. The composition includes, as initial components: water; an oxidizing agent; select fatty amine ethoxylate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and corrosion of the tungsten is inhibited.
    Type: Grant
    Filed: October 20, 2018
    Date of Patent: March 24, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Jia De Peng, Lin-Chen Ho, Benson Po-Hsiang Chi
  • Patent number: 10600655
    Abstract: A process for chemical mechanical polishing a substrate containing tungsten to at least reduce dishing of tungsten features of 100 ?m or less. The process includes providing a substrate containing tungsten features of 100 ?m or less; providing a polishing composition, containing, as initial components: water; an oxidizing agent; arginine or salts thereof; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a surfactant; and, optionally, a biocide; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and yet at least reducing dishing of the tungsten features of 100 ?m or less.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: March 24, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Jia-De Peng, Lin-Chen Ho, Syin Hsu
  • Patent number: 10584265
    Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (pI) below 5, preferably, an acidic amino acid or a pyridine acid, and one or more ethoxylated anionic surfactants having a C6 to C10 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: March 10, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Naresh Kumar Penta, Yi Guo, David Mosley, Matthew Van Hanehem, Kwadwo E. Tettey
  • Patent number: 10586708
    Abstract: The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad having radial feeder grooves in a polishing layer separating the polishing layer into polishing regions. The radial feeder grooves extend at least from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. The series of biased grooves separate a land area and have inner walls closer to the center and outer walls closer to the outer edge. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations polishes or planarizes the wafer with land areas wet by the overflowing polishing fluid.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: March 10, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: John Vu Nguyen, Tony Quan Tran, Jeffrey James Hendron, Jeffrey Robert Stack
  • Patent number: 10569384
    Abstract: The present invention concerns a chemical mechanical polishing pad having a polishing layer that possesses a consistent positive zeta potential across the entire surface. Also disclosed is a chemical mechanical polishing method using the polishing pad together with a positively charged slurry.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: February 25, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Matthew R. Gadinski, Mohammad T. Islam, Yi Guo, George C. Jacob
  • Patent number: 10569383
    Abstract: The present invention provides a chemical mechanical (CMP) polishing pad with a top surface, one or more apertures adapted to receive an endpoint detection window, an underside having a recessed portion and having one or more flanged endpoint detection windows (windows), each window having a flange adapted to fit snugly into the recessed portion of the underside of the polishing layer, the flange having a thickness slightly less than the depth of the recessed portion of the polishing layer (to allow for adhesive), having a detection area that fits snugly into an aperture in the polishing layer so that its top surface that lies substantially flush with the top surface of the polishing layer.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: February 25, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Stephen G. Pisklak, Jeffrey James Hendron
  • Patent number: 10573524
    Abstract: A process for chemical mechanical polishing a substrate containing titanium nitride and titanium is provided comprising: providing a polishing composition, containing, as initial components: water; an oxidizing agent; a linear polyalkylenimine polymer; a colloidal silica abrasive with a positive surface charge; a carboxylic acid; a source of ferric ions; and, optionally pH adjusting agent; wherein the polishing composition has a pH of 1 to 4; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein at least some of the titanium nitride and at least some of the titanium is polished away with a selectivity between titanium nitride and titanium.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: February 25, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Wei-Wen Tsai, Cheng-Ping Lee, Jiun-Fang Wang
  • Patent number: 10557060
    Abstract: A process for chemical mechanical polishing a substrate containing tungsten and titanium is provided comprising: providing the substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; an allylamine additive; a carboxylic acid; a source of iron ions; a colloidal silica abrasive with a positive surface charge; and, optionally pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein the tungsten (W) is selectively polished away from the substrate relative to the titanium (Ti).
    Type: Grant
    Filed: March 1, 2016
    Date of Patent: February 11, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Lin-Chen Ho, Wei-Wen Tsai, Cheng-Ping Lee, Jiun-Fang Wang
  • Patent number: 10508221
    Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions comprising one or more dispersions of colloidal silica particles having a zeta potential of from +5 to +50 mV and having one or more aminosilane group, preferably, elongated, bent or nodular colloidal silica particles, or, more preferably, such particles which contain a cationic nitrogen atom, and at least one amine heterocycle carboxylic acid having an isolectric point (pI) of from 2.5 to 5, preferably, from 3 to 4. The compositions have a pH of from 2.5 to 5.3. Preferably, the amine heterocycle carboxylic acid is an amine-containing heterocyclic monocarboxylic acid, such as nicotinic acid, picolinic acid, or isonicotinic acid. The compositions enable enhanced oxide:nitride removal rate ratios.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: December 17, 2019
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Yi Guo, David Mosley, Naresh Kumar Penta
  • Patent number: 10464187
    Abstract: A CMP polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a (i) curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and a (ii) polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%. The CMP polishing pad has a tunable tan-delta peak temperature at from 50 to 80° C. which has a value of from 0.2 to 0.8 at the tan-delta peak temperature and is useful for polishing a variety of substrates.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: November 5, 2019
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Bainian Qian, Kancharla-Arun K. Reddy, George C. Jacob, Marty W. DeGroot