Abstract: The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

Abstract: CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of the total moles of hydroxyl and amino moieties in the liquid polyol, small chain difunctional polyols and liquid aromatic diamine to mole of isocyanate in the aromatic diisocyanates or linear aromatic isocyanate-terminated urethane prepolymer ranges from 1.0:1.0 to 1.15:1.0.

Abstract: CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of the total moles of hydroxyl and amino moieties in the liquid polyol, small chain difunctional polyols and liquid aromatic diamine to mole of isocyanate in the aromatic diisocyanates or linear aromatic isocyanate-terminated urethane prepolymer ranges from 1.0:1.0 to 1.15:1.0.

Abstract: The present invention provides CMP polishing pads or layers having a unfilled Shore D (2 second) hardness of from 57-77 or a filled Shore D (2 second) hardness of from 18-50, made from a two-component reaction mixture of (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer having an unreacted isocyanate (NCO) concentration of from 18 to 47 wt. %, based on the total solids weight of the aromatic isocyanate component, and (ii) a liquid polyol component including one or more curatives selected from the group of amines defined by Formulas (I) and (II).

Abstract: A chemical mechanical polishing composition includes water, colloidal silica abrasive particles with a silica core containing a nitrogen species, a cerium compound coating including cerium oxide, cerium hydroxide or mixtures thereof, and a positive zeta potential, optionally an oxidizing agent, optionally a pH adjusting agent, optionally a biocide and optionally a surfactant. The chemical mechanical polishing composition has a pH of less than 7. Also described is a method of polishing a substrate containing silicon dioxide and a method of making the composite colloidal silica particles with the coating of cerium oxide, cerium hydroxide or mixtures thereof. The chemical mechanical polishing composition can be used to enhance the removal of silicon dioxide from a substrate in an acid environment.

Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface and a polymeric matrix forming the polishing layer. The polymer matrix is hydrophilic as measured with distilled water at a pH of 7 at a surface roughness of 10 ?m rms after soaking in distilled water for five minutes. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. The cationic fluoropolymer particles can increase polishing removal rate of substrate on a patterned wafer when polishing with slurries containing anionic colloidal silica.

Abstract: The present invention concerns a chemical mechanical polishing pad having a polishing layer. The polishing layer contains an extruded sheet. The extruded sheet is prepared by extruding a compounded photopolymerizable composition followed by exposure to UV light.

Abstract: The invention provides a method of forming porous polyurethane polishing pad that includes feeding liquid polyurethane onto a web sheet with a doctor blade while back tensioning the web. Coagulating liquid polyurethane onto the web sheet forms a two-layer substrate. The two-layer substrate has a porous matrix wherein the porous matrix has large pores extending upward from a base surface and open to an upper surface. Spring-arm sections connect lower and upper sections of the large pores.

Abstract: The invention provides a polymer-polymer composite polishing pad useful for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The polymer-polymer composite polishing pad includes a polishing layer having a polishing surface for polishing or planarizing the substrate; a polymeric matrix forming the polishing layer and including gas-filled or liquid-filled polymeric microelements; and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a tensile strength lower than the tensile strength of the polymeric matrix wherein diamond abrasive materials cut the fluoropolymer to form a reduced number of pad debris particles in the 1 ?m to 10 ?m size range.

Abstract: A polishing pad useful in chemical mechanical polishing comprising a polishing portion having a top polishing surface and comprising a polishing material an opening through the polishing pad, and a transparent window within the opening in the polishing pad, the transparent window being secured to the polishing pad and being transparent to at least one of magnetic and optical signals, the transparent window having a thickness and a top surface having a plurality of elements separated by interconnected recesses to provide a pattern in the top surface that includes recesses for improved deflection into a cavity in the polishing pad during polishing.

Abstract: A neutral to alkaline chemical mechanical composition for polishing tungsten includes, as initial components: water; an oxidizing agent selected from an iodate compound, a periodate compound and mixtures thereof; colloidal silica abrasive particles including a nitrogen-containing compound; optionally, a pH adjusting agent; and, optionally, a biocide. The chemical mechanical polishing method includes providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the neutral to alkaline chemical mechanical polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and, further, to at least inhibit static etch of the tungsten.

Abstract: The invention provides a method for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The method includes attaching a polymer-polymer composite polishing pad having a polishing layer to a polishing device. A hydrophilic polymeric matrix forms the polishing layer. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. A slurry containing anionic particles is applied to the polymer-polymer composite polishing pad and rubbed against the substrate to polish or planarize the substrate with the fluoropolymer particles interacting with the anionic particles to increase polishing removal rate.

Abstract: The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

Abstract: The present invention provides methods of manufacturing a chemical mechanical polishing (CMP polishing) layer for polishing substrates, such as semiconductor wafers comprising providing a composition of a plurality of liquid-filled microelements having a polymeric shell; classifying the composition via centrifugal air classification to remove fines and coarse particles and to produce liquid-filled microelements having a density of 800 to 1500 g/liter; and, forming the CMP polishing layer by (i) converting the classified liquid-filled microelements into gas-filled microelements by heating them, then mixing them with a liquid polymer matrix forming material and casting or molding the resulting mixture to form a polymeric pad matrix, or (ii) combining the classified liquid-filled microelements directly with the liquid polymer matrix forming material, and casting or molding.

Abstract: A polishing pad useful in chemical mechanical polishing comprises a base, and a plurality of structures protruding from the base wherein a portion of the plurality of structures are defined by a cross section having a perimeter which defines an area. The perimeter can be defined by parametric equations and can have six or more inflection points or the cross-section can comprise three or more lobes. The cross-section has a Delta parameter in the range of 0.2 to 0.75.

Abstract: The invention provides a method for polishing or planarizing a substrate. First, the method comprises attaching a polymer-polymer composite polishing pad to a polishing device. The polishing pad has a polymer matrix and fluoropolymer particles embedded in the polymeric matrix. The fluoropolymer particles have a zeta potential more negative than the polymeric matrix. Cationic particle-containing slurry is applied to the polishing pad. Conditioning the polymer-polymer composite polishing pad exposes the fluoropolymer particles to the polishing surface and creates fluoropolymer-containing debris particles in the slurry. Polishing or planarizing the substrate with the increased electronegativity from the fluoropolymer at the polishing surface and in the fluoropolymer-containing debris particles stabilizes the cationic particle-containing slurry to decreases the precipitation rate of the cationic particle-containing slurry.

Abstract: A method of enhancing the removal rate of polysilicon from a substrate includes mixing an acid chemical mechanical polishing slurry containing water, an organic acid and an abrasive with an alkaline solution containing water, an abrasive, a low alkyl amine compound; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the mixture of the chemical mechanical polishing slurry and the alkaline solution onto the polishing surface at or near the interface between the polishing pad and the substrate, wherein some of the polysilicon is polished away from the substrate.

Abstract: A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

Abstract: A chemical mechanical polishing composition includes water, colloidal silica abrasive particles with a silica core containing a nitrogen species, a cerium compound coating including cerium oxide, cerium hydroxide or mixtures thereof, and a positive zeta potential, optionally an oxidizing agent, optionally a pH adjusting agent, optionally a biocide and optionally a surfactant. The chemical mechanical polishing composition has a pH of less than 7. Also described is a method of polishing a substrate containing silicon dioxide and a method of making the composite colloidal silica particles with the coating of cerium oxide, cerium hydroxide or mixtures thereof. The chemical mechanical polishing composition can be used to enhance the removal of silicon dioxide from a substrate in an acid environment.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten and titanium is provided comprising: providing the substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a chitosan; a dicarboxylic acid, wherein the dicarboxylic acid is selected from the group consisting of propanedioic acid and 2-hydroxypropanedioic acid; a source of iron ions; a colloidal silica abrasive with a positive surface charge; and, optionally pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) and some of the titanium (Ti) is polished away from the substrate with a removal selectivity for the tungsten (W) relative to the titanium (Ti).