Abstract: A process for chemical mechanical polishing a substrate containing cobalt and TiN to at least improve cobalt: TiN removal rate selectivity. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alanine or salts thereof; and, colloidal silica abrasives with diameters of ?25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away such that there is an improvement in the cobalt: TiN removal rate selectivity.

Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of one or more surfactants chosen from an amine alkoxylate, an ammonium alkoxylate, or mixtures thereof, and colloidal silica particles having at least one cationic species, the colloidal silica particles being present in the amount of from 1 to 30 wt. %, as solids based on the total weight of the composition, and the compositions having a pH ranging from 2 to 6. The surfactants have a hydrophobic tail. The CMP polishing compositions exhibit tunable oxide:polysilicon and oxide:nitride removal rate ratios and reduce both silicon nitride and polysilicon removal rates significantly without significantly reducing dielectric (e.g. TEOS) removal rates.

Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: The porous polyurethane polishing pad includes a porous matrix having large pores that extend upward from a base surface and open to an upper surface. The large pores are interconnected with small pores. The porous matrix is a blend of two thermoplastic polymers. The first thermoplastic polyurethane has by molecular percent, 45 to 60 adipic acid, 10 to 30 MDI-ethylene glycol and 15 to 35 MDI and an Mn of 40,000 to 60,000 and a Mw of 125,000 to 175,000 and an Mw to Mn ratio of 2.5 to 4 The second thermoplastic polyurethane has by molecular percent, 40 to 50 adipic acid, 20 to 40 adipic acid butane diol, 5 to 20 MDI-ethylene glycol and 5 to 25 MDI and an Mn of 60,000 to 80,000 and a Mw of 125,000 to 175,000 and an Mw to Mn ratio of 1.5 to 3.

Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 5 to 1,000 m/sec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: The present invention provides an apparatus for use in mixing and dispensing a curable fluid stream (stream) into an open mold to fill the mold to make polishing pads for chemical mechanical planarization of substrates. The apparatus comprises an actuator frame on which is mounted (i) a set of two plates releasably attached to the actuator frame and adapted to cut the stream when the mold is full and to release from the actuator frame after cutting the stream, and (ii) a dispenser unit for continuous pouring of the stream into an open mold, the apparatus adapted to enable removal of the released plates from the actuator during the continuous pouring after the mold is full, e.g. by raising the actuator frame and the (ii) dispenser unit, whereby one can place a container above the mold to catch the plates.

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

Abstract: The invention is a method for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co0. The method mixes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (?) into a slurry containing 0.5 to 3 wt % colloidal silica particles (?), the colloidal silica particles containing primary particles, 0.5 to 2 wt % complexing agent (?) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N?-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N?,N?-tetraacetic acid, and balance water having a pH of 5 to 9 to create a polishing slurry for the semiconductor substrate. Oxidizing at least a surface portion of the Co0 to Co+3 of the semiconductor substrate to prevent runaway dissolution of the Co0 reduces polishing defects in the semiconductor substrate.

Abstract: The present invention provides methods for chemical mechanical polishing (CMP polishing) spin coated organic polymer films on a semiconductor wafer or substrate as part of lithography or as part of electronic packaging. The methods comprising spin coating an organic polymer liquid on a semiconductor wafer or substrate; at least partially curing the spin coating to form an organic polymer film; and, CMP polishing the organic polymer film with a polishing pad and an aqueous CMP polishing composition having a pH ranging from 1.5 to 4.5 and comprising elongated, bent or nodular silica particles containing one or more cationic nitrogen or phosphorus atoms, from 0.005 to 0.5 wt. %, based on total CMP polishing composition solids, of a sulfate group containing C8 to C18 alkyl or alkenyl group surfactant, and a pH adjusting agent.

Abstract: A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: The invention is to a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method includes applying droplets of a liquid polymer against a substrate to form a plurality of pores. The liquid polymer contains a nonionic surfactant, the nonionic surfactant has a concentration sufficient to facilitate growth of pores within the liquid polymer and an ionic surfactant has a concentration sufficient to limit growth of the pores within the liquid polymer. Curing the solid polymer forms a polishing pad with final size of the plurality of pores controlled by the concentration of nonionic surfactant and ionic surfactants.

Abstract: The present invention provides methods for cleaning the surface of CMP polishing pads comprising blowing a stream or curtain of forced air or gas from a source onto the surface of a CMP polishing pad substrate at a pressure of from 170 kPa (24.66 psig) to 600 kPa (87 psig), towards a vacuum source, the forced air or gas blowing at an angle of from 6 to 15° from a vertical plane which lies normal to the surface of the substrate, traverses the entire width of the surface of the substrate, and passes through the source of the forced air or gas, while, at the same time conveying along a horizontal plane the CMP polishing pad so that the entire surface of the CMP polishing pad surface is exposed to the forced air or gas at least one time; and, vacuuming the surface of the CMP polishing pad at a point on the surface which is downstream from a point at which the stream curtain of forced air or gas contacts the surface of the CMP polishing pad.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a dihydroxy bis-sulfide; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: The porous polyurethane polishing pad includes a porous polyurethane matrix having large pores extending upward from a base surface and open to a polishing surface. A series of pillow structures is formed from the porous matrix that include the large pores and the small pores. The pillow structures have a downward surface extending from the top polishing surface for forming downwardly sloped side walls at an angle from 30 to 60 degrees from the polishing surface. The large pores open to the downwardly sloped sidewalls and are less vertical than the large pores. The large pores are offset 10 to 60 degrees from the vertical direction in a direction more orthogonal to the sloped sidewalls.

Abstract: The present invention provides methods for making a pre-conditioned chemical mechanical (CMP) polishing pad having a pad surface microtexture effective for polishing comprising grinding the surface of the CMP polishing pad having a radius with a rotary grinder while it is held in place on a flat bed platen surface, the rotary grinder having a grinding surface disposed parallel to or substantially parallel to the surface of the flat bed platen and made of a porous abrasive material, wherein the resulting CMP polishing pad has a surface roughness of from 0.01 ?m to 25 ?m, Sq. The present invention also provides a CMP polishing pad having a series of visibly intersecting arcs on the polishing layer surface, the intersecting arcs having a radius of curvature equal to or greater than half of the radius of curvature of the pad and extending all the way around the surface of the pad in radial symmetry around the center point of the pad.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions have excellent heat aging and shelf stability in the form of concentrates comprising a mixture of a compound containing two quaternary ammonium groups, such as hexabutyl C1-C8 alkanediammonium dihydroxides or salts thereof, preferably N,N,N,N?,N?,N?-hexabutyl-1,4-butanediammonium dihydroxide (HBBAH), and aminosilane group containing silica particles in the amount of from 1 to 30 wt. % or, preferably, from 15 to 22 wt. %, as solids based on the total weight of the composition, the composition having a pH ranging from 3 to 5 or, preferably, from 3.5 to 4.5 wherein the composition is stable against visible precipitation or sedimentation at a 15 wt. % solids content after heat aging at a temperature of 45° C. for at least 6 days.

Abstract: The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions having a pH ranging from 2.5 to 5.3 and comprising a mixture of spherical colloidal silica particles and from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition, of elongated, bent or nodular silica particles wherein the colloidal and elongated, bent or nodular silica particles differ from each other in weight average particle size (CPS) less than 20 nm, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms. The present invention further provides methods of using the compositions in high downforce CMP polishing applications.

Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Abstract: A method of manufacturing chemical mechanical polishing pads is provided, wherein an automated inspection system is configured to detect macro inhomogeneities is skived sheets and to classify the skived sheets as either acceptable or suspect; wherein the acceptable skived sheets are further processed to form polishing layers of chemical mechanical polishing pads.